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公开(公告)号：US07544957B2
公开(公告)日：2009-06-09
申请号：US11441633
申请日：2006-05-26
Applicant: Steven R. Walther , Sandeep Mehta
Inventor： Steven R. Walther , Sandeep Mehta
CPC classification number: H01J37/3171 , H01J37/3026 , H01J37/3172 , H01J2237/30461 , H01J2237/30472 , H01J2237/30488 , H01J2237/31703 , H01J2237/3171
Abstract: A method includes receiving an input signal representative of a desired two-dimensional non-uniform dose pattern for a front surface of a workpiece, driving the workpiece relative to an ion beam to distribute the ion beam across the front surface of the workpiece, and controlling at least one parameter of an ion implanter when the ion beam is incident on the front surface of the workpiece to directly create the desired two-dimensional non-uniform dose pattern in one pass of the front surface of workpiece relative to the ion beam. The beam may be a scanned beam or a ribbon beam. An ion implanter is also provided.
Abstract translation: 一种方法包括接收表示工件前表面的期望的二维不均匀剂量图案的输入信号，相对于离子束驱动工件以将离子束分布在工件的前表面上，并且控制 离子注入机的至少一个参数，当离子束入射到工件的前表面上，以在工件前表面相对于离子束的一次通过中直接产生所需的二维非均匀剂量图案。 光束可以是扫描光束或带状光束。 还提供了离子注入机。
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公开(公告)号：US07544959B2
公开(公告)日：2009-06-09
申请号：US12099420
申请日：2008-04-08
Applicant: Steven R. Walther , Sandeep Mehta , Naushad Variam , Ukyo Jeong
Inventor： Steven R. Walther , Sandeep Mehta , Naushad Variam , Ukyo Jeong
IPC: H01J37/317 , H01J37/36 , H01L21/302
CPC classification number: C03C23/0055 , B08B7/0057 , B08B7/0071 , C03C15/00 , C03C23/002 , H01J37/321 , H01J37/32412 , H01J2237/335 , H01L21/02046 , H01L21/26513
Abstract: Methods and apparatus that introduce, within the ion implant chamber or an isolated chamber in communication therewith, the capability to remove contaminants and oxide surface layers on a wafer surface prior to ion implantation, are disclosed. The mechanisms for removal of contaminants include conducting: a low energy plasma etch, heating the wafer and application of ultraviolet illumination, either in combination or individually. As a result, implantation can occur immediately after the cleaning/preparation process without the contamination potential of exposure of the wafer to an external environment. The preparation allows for the removal of surface contaminants, such as water vapor, organic materials and surface oxides.
Abstract translation: 公开了在离子注入室或与之连通的隔离室内引入在离子注入之前去除晶片表面上的污染物和氧化物表面层的能力的方法和装置。 去除污染物的机理包括：组合或单独地进行低能量等离子体蚀刻，加热晶片和施加紫外线照明。 结果，可以在清洁/制备过程之后立即进行植入，而不会使晶片暴露于外部环境的污染潜力。 该制剂允许去除表面污染物，例如水蒸汽，有机材料和表面氧化物。
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3.发明授权Plasma implantation of deuterium for passivation of semiconductor-device interfaces 失效用于钝化半导体器件界面的氘的等离子体注入公开(公告)号：US07378335B2
公开(公告)日：2008-05-27
申请号：US11288828
申请日：2005-11-29
Applicant: Steven R. Walther , Ukyo Jeong , Sandeep Mehta , Naushad K. Variam
Inventor： Steven R. Walther , Ukyo Jeong , Sandeep Mehta , Naushad K. Variam
IPC: H01L21/425
CPC classification number: H01L21/3003 , H01L21/28185 , H01L21/2822 , H01L21/28238
Abstract: A method for fabricating a semiconductor-based device includes providing a substrate including a semiconductor layer, forming a gate dielectric layer on the semiconductor layer, forming a plasma including deuterium, plasma implanting deuterium from the plasma into the substrate, and annealing the substrate to promote passivation of the interface between the dielectric layer and the semiconductor layer.
Abstract translation: 一种制造基于半导体的器件的方法，包括提供包括半导体层的衬底，在半导体层上形成栅介质层，形成包括氘的等离子体，将等离子体等离子体注入氘到衬底中，以及退火衬底以促进 钝化介电层和半导体层之间的界面。
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公开(公告)号：US07993698B2
公开(公告)日：2011-08-09
申请号：US11525878
申请日：2006-09-23
Applicant: Julian Blake , Jonathan England , Scott Holden , Steven R. Walther , Reuel Liebert , Richard S. Muka , Ukyo Jeong , Jinning Liu , Kyu-Ha Shim , Sandeep Mehta
Inventor： Julian Blake , Jonathan England , Scott Holden , Steven R. Walther , Reuel Liebert , Richard S. Muka , Ukyo Jeong , Jinning Liu , Kyu-Ha Shim , Sandeep Mehta
CPC classification number: H01J37/3171 , H01J2237/2001
Abstract: Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature-controlled ion implantation. The apparatus may comprise at least one thermal sensor adapted to measure a temperature of a wafer during an ion implantation process inside an end station of an ion implanter. The apparatus may also comprise a thermal conditioning unit coupled to the end station. The apparatus may further comprise a controller in communication with the thermal sensor and the thermal conditioning unit, wherein the controller compares the measured temperature to a desired wafer temperature and causes the thermal conditioning unit to adjust the temperature of the wafer based upon the comparison.
Abstract translation: 公开了用于温度控制离子注入的技术。 在一个特定的示例性实施例中，可以将技术实现为用于温度控制的离子注入的装置。 该装置可以包括至少一个热传感器，适于在离子注入机的端站内的离子注入过程期间测量晶片的温度。 该装置还可以包括耦合到终端站的热调节单元。 该装置还可以包括与热传感器和热调节单元通信的控制器，其中控制器将测量的温度与期望的晶片温度进行比较，并且使得热调节单元基于比较来调节晶片的温度。
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公开(公告)号：US20080076194A1
公开(公告)日：2008-03-27
申请号：US11525878
申请日：2006-09-23
Applicant: Julian Blake , Jonathan England , Scott Holden , Steven R. Walther , Reuel Liebert , Richard S. Muka , Ukyo Jeong , Jinning Liu , Kyu-Ha Shim , Sandeep Mehta
Inventor： Julian Blake , Jonathan England , Scott Holden , Steven R. Walther , Reuel Liebert , Richard S. Muka , Ukyo Jeong , Jinning Liu , Kyu-Ha Shim , Sandeep Mehta
IPC: H01L21/425
CPC classification number: H01J37/3171 , H01J2237/2001
Abstract: Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature-controlled ion implantation. The apparatus may comprise at least one thermal sensor adapted to measure a temperature of a wafer during an ion implantation process inside an end station of an ion implanter. The apparatus may also comprise a thermal conditioning unit coupled to the end station. The apparatus may further comprise a controller in communication with the thermal sensor and the thermal conditioning unit, wherein the controller compares the measured temperature to a desired wafer temperature and causes the thermal conditioning unit to adjust the temperature of the wafer based upon the comparison.
Abstract translation: 公开了用于温度控制离子注入的技术。 在一个特定的示例性实施例中，可以将技术实现为用于温度控制的离子注入的装置。 该装置可以包括至少一个热传感器，适于在离子注入机的端站内的离子注入过程期间测量晶片的温度。 该装置还可以包括耦合到终端站的热调节单元。 该装置还可以包括与热传感器和热调节单元通信的控制器，其中控制器将测量的温度与期望的晶片温度进行比较，并且使得热调节单元基于比较来调节晶片的温度。
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Patent Agency Ranking
公开(公告)号：US20080067434A1
公开(公告)日：2008-03-20
申请号：US11441633
申请日：2006-05-26
Applicant: Steven R. Walther , Sandeep Mehta
Inventor： Steven R. Walther , Sandeep Mehta
IPC: H01J37/317
CPC classification number: H01J37/3171 , H01J37/3026 , H01J37/3172 , H01J2237/30461 , H01J2237/30472 , H01J2237/30488 , H01J2237/31703 , H01J2237/3171
Abstract: A method includes receiving an input signal representative of a desired two-dimensional non-uniform dose pattern for a front surface of a workpiece, driving the workpiece relative to an ion beam to distribute the ion beam across the front surface of the workpiece, and controlling at least one parameter of an ion implanter when the ion beam is incident on the front surface of the workpiece to directly create the desired two-dimensional non-uniform dose pattern in one pass of the front surface of workpiece relative to the ion beam. The beam may be a scanned beam or a ribbon beam. An ion implanter is also provided.
Abstract translation: 一种方法包括接收表示工件前表面的期望的二维不均匀剂量图案的输入信号，相对于离子束驱动工件以将离子束分布在工件的前表面上，并且控制 离子注入机的至少一个参数，当离子束入射到工件的前表面上，以在工件前表面相对于离子束的一次通过中直接产生所需的二维非均匀剂量图案。 光束可以是扫描光束或带状光束。 还提供了离子注入机。
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7.发明授权Plasma ion implantation systems and methods using solid source of dopant material 失效等离子体离子注入系统和使用固体源的掺杂剂材料的方法公开(公告)号：US07326937B2
公开(公告)日：2008-02-05
申请号：US11076696
申请日：2005-03-09
Applicant: Sandeep Mehta , Steven R. Walther , Naushad K. Variam
Inventor： Sandeep Mehta , Steven R. Walther , Naushad K. Variam
IPC: H01J27/00
CPC classification number: H01J37/32412
Abstract: Plasma ion implantation apparatus includes a process chamber, a platen located in the process chamber for supporting a substrate, a dopant source including a solid dopant element and a vaporizer to vaporize dopant material from the solid dopant element, a plasma source to produce a plasma containing ions of the dopant material, and an implant pulse source to apply implant pulses to the platen for accelerating the ions of the dopant material from the plasma into the substrate.
Abstract translation: 等离子体离子注入装置包括处理室，位于用于支撑衬底的处理室中的压板，包括固体掺杂剂元素的掺杂剂源和用于从固体掺杂剂元素蒸发掺杂剂材料的蒸发器，等离子体源，以产生含有 掺杂剂材料的离子和注入脉冲源，以将注入脉冲施加到压板上，以将掺杂剂材料的离子从等离子体加速到衬底中。
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8.发明申请Plasma implantation of deuterium for passivation of semiconductor-device interfaces 失效用于钝化半导体器件界面的氘的等离子体注入公开(公告)号：US20070123012A1
公开(公告)日：2007-05-31
申请号：US11288828
申请日：2005-11-29
Applicant: Steven Walther , Ukyo Jeong , Sandeep Mehta , Naushad Variam
Inventor： Steven Walther , Ukyo Jeong , Sandeep Mehta , Naushad Variam
IPC: H01L21/04
CPC classification number: H01L21/3003 , H01L21/28185 , H01L21/2822 , H01L21/28238
Abstract: A method for fabricating a semiconductor-based device includes providing a substrate including a semiconductor layer, forming a gate dielectric layer on the semiconductor layer, forming a plasma including deuterium, plasma implanting deuterium from the plasma into the substrate, and annealing the substrate to promote passivation of the interface between the dielectric layer and the semiconductor layer.
Abstract translation: 一种制造基于半导体的器件的方法，包括提供包括半导体层的衬底，在半导体层上形成栅介质层，形成包括氘的等离子体，将等离子体等离子体注入氘到衬底中，以及退火衬底以促进 钝化介电层和半导体层之间的界面。
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9.发明申请公开(公告)号：US20220068152A1
公开(公告)日：2022-03-03
申请号：US17445903
申请日：2021-08-25
Applicant: Clarence R. Johnson , Robert Wesley Smith , Regis Bolden, II , Sandeep Mehta , Zuwana Johnson , Javarro Russell , David Michael Schor
Inventor： Clarence R. Johnson , Robert Wesley Smith , Regis Bolden, II , Sandeep Mehta , Zuwana Johnson , Javarro Russell , David Michael Schor
IPC: G09B7/00 , G06F3/0483 , G06F3/0484 , A63B24/00
Abstract: A system, apparatus, and method to provide a systematic assessment learning approach that is utilized through a computing device to determine its users sport IQ score for one or more sports is disclosed. The system includes a multi-dimensional, systematic learning assessment processor to correlate answered questions and compute the sport IQ-score. In some cases, the questions in the database may include videos of sport content and other associated sport content. The system presents a quantifiable metric of a user's performance potential in a sport and provides a learning program for developing the user's skills across multiple dimensions.
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10.发明授权System and method for responding to failure of a hardware locus at a communication installation 有权用于响应通信安装处的硬件轨迹的故障的系统和方法公开(公告)号：US08074111B1
公开(公告)日：2011-12-06
申请号：US11523195
申请日：2006-09-18
Applicant: Sandeep Mehta
Inventor： Sandeep Mehta
IPC: G06F11/00
CPC classification number: G06F11/2033 , G06F11/2038 , G06F2201/805
Abstract: A method for responding to a failure of hardware locus of at a communication installation having a plurality of control apparatuses for controlling a plurality of processes distributed among a plurality of hardware loci, the hardware loci including at least one spare hardware locus, includes the steps of: (a) Shifting control of a failed process from an initial control apparatus to an alternate control apparatus located at an alternate hardware locus than the failed hardware locus. The failed process is a respective process controlled by the initial control apparatus located at the failed hardware locus. (b) Relocating the respective control apparatuses located at the failed hardware locus to a spare hardware locus. (c) Shifting control of the failed process from the alternate control apparatus to the initial control apparatus relocated at the spare hardware locus.
Abstract translation: 一种响应于具有多个控制装置的通信装置的硬件轨迹的故障的方法，所述多个控制装置用于控制分布在多个硬件轨迹之间的多个处理，所述硬件轨迹包括至少一个备用硬件轨迹，包括以下步骤： ：（a）将故障处理的控制从初始控制装置转移到位于与故障硬件轨迹相比的备用硬件轨迹处的替代控制装置。 失败的过程是由位于故障硬件轨迹处的初始控制装置控制的相应过程。 （b）将位于故障硬件轨迹的各控制装置重定位到备用硬件轨迹。 （c）将故障处理的控制从替代控制装置转移到在备用硬件轨迹上重定位的初始控制装置。
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