公开(公告)号：US07326937B2

公开(公告)日：2008-02-05

申请号：US11076696

申请日：2005-03-09

Applicant: Sandeep Mehta ,  Steven R. Walther ,  Naushad K. Variam

Inventor： Sandeep Mehta ,  Steven R. Walther ,  Naushad K. Variam

IPC: H01J27/00

CPC classification number: H01J37/32412

Abstract: Plasma ion implantation apparatus includes a process chamber, a platen located in the process chamber for supporting a substrate, a dopant source including a solid dopant element and a vaporizer to vaporize dopant material from the solid dopant element, a plasma source to produce a plasma containing ions of the dopant material, and an implant pulse source to apply implant pulses to the platen for accelerating the ions of the dopant material from the plasma into the substrate.

Abstract translation: 等离子体离子注入装置包括处理室，位于用于支撑衬底的处理室中的压板，包括固体掺杂剂元素的掺杂剂源和用于从固体掺杂剂元素蒸发掺杂剂材料的蒸发器，等离子体源，以产生含有 掺杂剂材料的离子和注入脉冲源，以将注入脉冲施加到压板上，以将掺杂剂材料的离子从等离子体加速到衬底中。

公开(公告)号：US07378335B2

公开(公告)日：2008-05-27

申请号：US11288828

申请日：2005-11-29

Applicant: Steven R. Walther ,  Ukyo Jeong ,  Sandeep Mehta ,  Naushad K. Variam

Inventor： Steven R. Walther ,  Ukyo Jeong ,  Sandeep Mehta ,  Naushad K. Variam

IPC: H01L21/425

CPC classification number: H01L21/3003 ,  H01L21/28185 ,  H01L21/2822 ,  H01L21/28238

Abstract: A method for fabricating a semiconductor-based device includes providing a substrate including a semiconductor layer, forming a gate dielectric layer on the semiconductor layer, forming a plasma including deuterium, plasma implanting deuterium from the plasma into the substrate, and annealing the substrate to promote passivation of the interface between the dielectric layer and the semiconductor layer.

Abstract translation: 一种制造基于半导体的器件的方法，包括提供包括半导体层的衬底，在半导体层上形成栅介质层，形成包括氘的等离子体，将等离子体等离子体注入氘到衬底中，以及退火衬底以促进 钝化介电层和半导体层之间的界面。

公开(公告)号：US07544959B2

公开(公告)日：2009-06-09

申请号：US12099420

申请日：2008-04-08

Applicant: Steven R. Walther ,  Sandeep Mehta ,  Naushad Variam ,  Ukyo Jeong

Inventor： Steven R. Walther ,  Sandeep Mehta ,  Naushad Variam ,  Ukyo Jeong

IPC: H01J37/317 ,  H01J37/36 ,  H01L21/302

CPC classification number: C03C23/0055 ,  B08B7/0057 ,  B08B7/0071 ,  C03C15/00 ,  C03C23/002 ,  H01J37/321 ,  H01J37/32412 ,  H01J2237/335 ,  H01L21/02046 ,  H01L21/26513

Abstract: Methods and apparatus that introduce, within the ion implant chamber or an isolated chamber in communication therewith, the capability to remove contaminants and oxide surface layers on a wafer surface prior to ion implantation, are disclosed. The mechanisms for removal of contaminants include conducting: a low energy plasma etch, heating the wafer and application of ultraviolet illumination, either in combination or individually. As a result, implantation can occur immediately after the cleaning/preparation process without the contamination potential of exposure of the wafer to an external environment. The preparation allows for the removal of surface contaminants, such as water vapor, organic materials and surface oxides.

Abstract translation: 公开了在离子注入室或与之连通的隔离室内引入在离子注入之前去除晶片表面上的污染物和氧化物表面层的能力的方法和装置。 去除污染物的机理包括：组合或单独地进行低能量等离子体蚀刻，加热晶片和施加紫外线照明。 结果，可以在清洁/制备过程之后立即进行植入，而不会使晶片暴露于外部环境的污染潜力。 该制剂允许去除表面污染物，例如水蒸汽，有机材料和表面氧化物。

公开(公告)号：US07544957B2

公开(公告)日：2009-06-09

申请号：US11441633

申请日：2006-05-26

Applicant: Steven R. Walther ,  Sandeep Mehta

Inventor： Steven R. Walther ,  Sandeep Mehta

IPC: H01J37/08 ,  G21K5/10

CPC classification number: H01J37/3171 ,  H01J37/3026 ,  H01J37/3172 ,  H01J2237/30461 ,  H01J2237/30472 ,  H01J2237/30488 ,  H01J2237/31703 ,  H01J2237/3171

Abstract: A method includes receiving an input signal representative of a desired two-dimensional non-uniform dose pattern for a front surface of a workpiece, driving the workpiece relative to an ion beam to distribute the ion beam across the front surface of the workpiece, and controlling at least one parameter of an ion implanter when the ion beam is incident on the front surface of the workpiece to directly create the desired two-dimensional non-uniform dose pattern in one pass of the front surface of workpiece relative to the ion beam. The beam may be a scanned beam or a ribbon beam. An ion implanter is also provided.

Abstract translation: 一种方法包括接收表示工件前表面的期望的二维不均匀剂量图案的输入信号，相对于离子束驱动工件以将离子束分布在工件的前表面上，并且控制 离子注入机的至少一个参数，当离子束入射到工件的前表面上，以在工件前表面相对于离子束的一次通过中直接产生所需的二维非均匀剂量图案。 光束可以是扫描光束或带状光束。 还提供了离子注入机。

公开(公告)号：US07993698B2

公开(公告)日：2011-08-09

申请号：US11525878

申请日：2006-09-23

Applicant: Julian Blake ,  Jonathan England ,  Scott Holden ,  Steven R. Walther ,  Reuel Liebert ,  Richard S. Muka ,  Ukyo Jeong ,  Jinning Liu ,  Kyu-Ha Shim ,  Sandeep Mehta

Inventor： Julian Blake ,  Jonathan England ,  Scott Holden ,  Steven R. Walther ,  Reuel Liebert ,  Richard S. Muka ,  Ukyo Jeong ,  Jinning Liu ,  Kyu-Ha Shim ,  Sandeep Mehta

IPC: C23C16/48 ,  C23C16/52 ,  C23C14/48 ,  C23C14/54 ,  C23C14/52

CPC classification number: H01J37/3171 ,  H01J2237/2001

Abstract: Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature-controlled ion implantation. The apparatus may comprise at least one thermal sensor adapted to measure a temperature of a wafer during an ion implantation process inside an end station of an ion implanter. The apparatus may also comprise a thermal conditioning unit coupled to the end station. The apparatus may further comprise a controller in communication with the thermal sensor and the thermal conditioning unit, wherein the controller compares the measured temperature to a desired wafer temperature and causes the thermal conditioning unit to adjust the temperature of the wafer based upon the comparison.

Abstract translation: 公开了用于温度控制离子注入的技术。 在一个特定的示例性实施例中，可以将技术实现为用于温度控制的离子注入的装置。 该装置可以包括至少一个热传感器，适于在离子注入机的端站内的离子注入过程期间测量晶片的温度。 该装置还可以包括耦合到终端站的热调节单元。 该装置还可以包括与热传感器和热调节单元通信的控制器，其中控制器将测量的温度与期望的晶片温度进行比较，并且使得热调节单元基于比较来调节晶片的温度。

公开(公告)号：US20080076194A1

公开(公告)日：2008-03-27

申请号：US11525878

申请日：2006-09-23

Applicant: Julian Blake ,  Jonathan England ,  Scott Holden ,  Steven R. Walther ,  Reuel Liebert ,  Richard S. Muka ,  Ukyo Jeong ,  Jinning Liu ,  Kyu-Ha Shim ,  Sandeep Mehta

Inventor： Julian Blake ,  Jonathan England ,  Scott Holden ,  Steven R. Walther ,  Reuel Liebert ,  Richard S. Muka ,  Ukyo Jeong ,  Jinning Liu ,  Kyu-Ha Shim ,  Sandeep Mehta

IPC: H01L21/425

CPC classification number: H01J37/3171 ,  H01J2237/2001

Abstract: Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature-controlled ion implantation. The apparatus may comprise at least one thermal sensor adapted to measure a temperature of a wafer during an ion implantation process inside an end station of an ion implanter. The apparatus may also comprise a thermal conditioning unit coupled to the end station. The apparatus may further comprise a controller in communication with the thermal sensor and the thermal conditioning unit, wherein the controller compares the measured temperature to a desired wafer temperature and causes the thermal conditioning unit to adjust the temperature of the wafer based upon the comparison.

Abstract translation: 公开了用于温度控制离子注入的技术。 在一个特定的示例性实施例中，可以将技术实现为用于温度控制的离子注入的装置。 该装置可以包括至少一个热传感器，适于在离子注入机的端站内的离子注入过程期间测量晶片的温度。 该装置还可以包括耦合到终端站的热调节单元。 该装置还可以包括与热传感器和热调节单元通信的控制器，其中控制器将测量的温度与期望的晶片温度进行比较，并且使得热调节单元基于比较来调节晶片的温度。

公开(公告)号：US20080067434A1

公开(公告)日：2008-03-20

申请号：US11441633

申请日：2006-05-26

Applicant: Steven R. Walther ,  Sandeep Mehta

Inventor： Steven R. Walther ,  Sandeep Mehta

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/3026 ,  H01J37/3172 ,  H01J2237/30461 ,  H01J2237/30472 ,  H01J2237/30488 ,  H01J2237/31703 ,  H01J2237/3171

Abstract: A method includes receiving an input signal representative of a desired two-dimensional non-uniform dose pattern for a front surface of a workpiece, driving the workpiece relative to an ion beam to distribute the ion beam across the front surface of the workpiece, and controlling at least one parameter of an ion implanter when the ion beam is incident on the front surface of the workpiece to directly create the desired two-dimensional non-uniform dose pattern in one pass of the front surface of workpiece relative to the ion beam. The beam may be a scanned beam or a ribbon beam. An ion implanter is also provided.

Abstract translation: 一种方法包括接收表示工件前表面的期望的二维不均匀剂量图案的输入信号，相对于离子束驱动工件以将离子束分布在工件的前表面上，并且控制 离子注入机的至少一个参数，当离子束入射到工件的前表面上，以在工件前表面相对于离子束的一次通过中直接产生所需的二维非均匀剂量图案。 光束可以是扫描光束或带状光束。 还提供了离子注入机。

公开(公告)号：US07820460B2

公开(公告)日：2010-10-26

申请号：US12205514

申请日：2008-09-05

Applicant: Paul Sullivan ,  Peter Nunan ,  Steven R. Walther

Inventor： Paul Sullivan ,  Peter Nunan ,  Steven R. Walther

IPC: H01L21/00 ,  H01L31/00 ,  C23C16/00

CPC classification number: H01L31/022425 ,  H01L31/03529 ,  H01L31/068 ,  H01L31/0682 ,  Y02E10/547

Abstract: Apparatuses and methods for manufacturing a solar cell are disclosed. In a particular embodiment, the solar cell may be manufactured by disposing a solar cell in a chamber having a particle source; disposing a patterned assembly comprising an aperture and an assembly segment between the particle source and the solar cell; and selectively implanting first type dopants traveling through the aperture into a first region of the solar cell while minimizing introduction of the first type dopants into a region outside of the first region.

Abstract translation: 公开了用于制造太阳能电池的装置和方法。 在特定实施例中，太阳能电池可以通过在具有粒子源的室中设置太阳能电池来制造; 布置图案化组件，其包括孔和在所述颗粒源和所述太阳能电池之间的组件段; 以及将穿过所述孔的第一类型掺杂剂选择性地注入到所述太阳能电池的第一区域中，同时最小化将所述第一类型掺杂剂引入所述​​第一区域外的区域。

公开(公告)号：US07675730B2

公开(公告)日：2010-03-09

申请号：US11767730

申请日：2007-06-25

Applicant: Steven R. Walther ,  Bon-Woong Koo ,  Bernard Gregory Lindsay

Inventor： Steven R. Walther ,  Bon-Woong Koo ,  Bernard Gregory Lindsay

IPC: H01L23/00

CPC classification number: H01J37/3299 ,  H01J37/32935

Abstract: Techniques for detecting wafer charging in a plasma processing system are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for detecting wafer charging in a plasma processing system. The apparatus may comprise a plasma chamber to produce a plasma discharge above a wafer in the plasma chamber. The apparatus may also comprise a biasing circuit to bias the wafer to draw ions from the plasma discharge towards the wafer. The apparatus may further comprise a detection mechanism to detect charge buildup on the wafer by measuring an electric field in one or more designated locations near a top surface of the wafer.

Abstract translation: 公开了一种在等离子体处理系统中检测晶片充电的技术。 在一个特定的示例性实施例中，这些技术可以被实现为用于在等离子体处理系统中检测晶片充电的装置。 该装置可以包括等离子体室，以在等离子体室中的晶片之上产生等离子体放电。 该装置还可以包括偏置电路，用于偏置晶片以从离子放电中向离子晶片提取离子。 该装置还可以包括检测机构，以通过测量在晶片顶表面附近的一个或多个指定位置的电场来检测晶片上的电荷积累。

公开(公告)号：US20100041176A1

公开(公告)日：2010-02-18

申请号：US12603707

申请日：2009-10-22

Applicant: Paul SULLIVAN ,  Peter Nunan ,  Steven R. Walther

Inventor： Paul SULLIVAN ,  Peter Nunan ,  Steven R. Walther

IPC: H01L31/0232 ,  H01L31/02

CPC classification number: H01L31/022425 ,  H01L31/03529 ,  H01L31/068 ,  H01L31/0682 ,  Y02E10/547

Abstract: Apparatuses and methods for manufacturing a solar cell are disclosed. In a particular embodiment, the solar cell may be manufactured by disposing a solar cell in a chamber having a particle source; disposing a patterned assembly comprising an aperture and an assembly segment between the particle source and the solar cell; and selectively implanting first type dopants traveling through the aperture into a first region of the solar cell while minimizing introduction of the first type dopants into a region outside of the first region.

Abstract translation: 公开了用于制造太阳能电池的装置和方法。 在特定实施例中，太阳能电池可以通过在具有粒子源的室中设置太阳能电池来制造; 布置图案化组件，其包括孔和在所述颗粒源和所述太阳能电池之间的组件段; 以及将穿过所述孔的第一类型掺杂剂选择性地注入到所述太阳能电池的第一区域中，同时最小化将所述第一类型掺杂剂引入所述​​第一区域外的区域。