公开(公告)号：US20080137180A1

公开(公告)日：2008-06-12

申请号：US11924772

申请日：2007-10-26

Applicant: Su Hwan OH ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

Inventor： Su Hwan OH ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

IPC: H01S3/00 ,  G02B6/10 ,  H01L33/00

CPC classification number: G02B6/1228 ,  G02B2006/121 ,  H01L33/0045 ,  H01S5/026 ,  H01S5/028 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/227 ,  H01S5/50

Abstract: Provided are a reflective semiconductor optical amplifier (R-SOA) and a superluminescent diode (SLD). The R-SOA includes: a substrate; an optical waveguide including a lower clad layer, an active layer independent of the polarization of light, and an upper clad layer sequentially stacked on the substrate, the optical waveguide comprising linear, curved, and tapered waveguide areas; and a current blocking layer formed around the optical waveguide to block a flow of current out of the active layer, wherein the linear and curved waveguide areas have a single buried hetero (BH) structure, and the tapered waveguide area has a dual BH structure.

Abstract translation: 提供了反射半导体光放大器（R-SOA）和超发光二极管（SLD）。 R-SOA包括：基板; 包括下包层，独立于光的偏振的有源层和顺序地堆叠在基板上的上包层的光波导，所述光波导包括线性，弯曲和锥形的波导区域; 以及形成在所述光波导周围的电流阻挡层，以阻挡所述有源层中的电流流动，其中所述线性和弯曲波导区域具有单个埋入异质（BH）结构，并且所述锥形波导区域具有双BH结构。

公开(公告)号：US20080117492A1

公开(公告)日：2008-05-22

申请号：US11930727

申请日：2007-10-31

Applicant: Su Hwan OH ,  Jong Moo LEE

Inventor： Su Hwan OH ,  Jong Moo LEE

IPC: G02F1/01

CPC classification number: H04N9/3129

Abstract: A method and apparatus for modulating a particular light source used for laser display are provided. The apparatus includes a digital modulator digitally modulating light output from a semiconductor laser to a frequency higher than a repetition frequency required for laser image display; and a pixel brightness adjustor inserting at least one high-speed pulse into a period of the modulated output light, which is required for a single pixel, and adjusting a brightness of the pixel by adjusting the number of the inserted high-speed pulses.

Abstract translation: 提供了用于调制用于激光显示的特定光源的方法和装置。 该装置包括将从半导体激光器输出的光数字调制到高于激光图像显示所需的重复频率的数字调制器; 以及像素亮度调整器，其将至少一个高速脉冲插入到单个像素所需的调制输出光的周期中，并且通过调整插入的高速脉冲的数量来调整像素的亮度。

公开(公告)号：US20120281723A1

公开(公告)日：2012-11-08

申请号：US13461118

申请日：2012-05-01

Applicant: Su Hwan OH ,  Ki-Hong Yoon ,  Kisoo Kim

Inventor： Su Hwan OH ,  Ki-Hong Yoon ,  Kisoo Kim

IPC: H01S3/10

CPC classification number: H01S5/141 ,  H01L2224/48091 ,  H01L2224/49171 ,  H01S5/005 ,  H01S5/02212 ,  H01S5/02248 ,  H01S5/02288 ,  H01S5/02415 ,  H01S5/02446 ,  H01S5/0265 ,  H01S5/101 ,  H01S5/50 ,  H04J14/02 ,  H01L2924/00014

Abstract: Provided is a wavelength-tunable external cavity laser. The wavelength-tunable external cavity laser includes a housing, a planar lightwave circuit (PLC) device disposed within the housing, a pump light source disposed at a side of the PLC device within the housing, and a modulation part disposed at the other side of the PLC device facing the pump light source within the housing.

Abstract translation: 提供了一种波长可调谐的外腔激光器。 所述波长可调谐外腔激光器包括壳体，设置在所述壳体内的平面光波电路（PLC）装置，设置在所述壳体内的所述PLC装置的一侧的泵浦光源，以及设置在所述壳体内的另一侧的调制部 PLC设备面向外壳内的泵浦光源。

公开(公告)号：US20090154514A1

公开(公告)日：2009-06-18

申请号：US12182543

申请日：2008-07-30

Applicant: Su Hwan OH ,  Jung Jin JU

Inventor： Su Hwan OH ,  Jung Jin JU

IPC: H01S5/026

CPC classification number: H01S5/141 ,  H01L33/0045 ,  H01S5/026 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/16 ,  H01S5/227 ,  H01S5/50

Abstract: Provided is a super luminescent diode having low power consumption due to low threshold current and a high output power in low-current operation, which is suitable for an external cavity laser. The super luminescent diode for use in the external cavity laser is divided into a super luminescent diode (SLD) region and a semiconductor optical amplifier (SOA) region to provide a light source having a low threshold current and a nearly double output power of a conventional SLD.A super luminescent diode-integrated reflective optical amplifier includes a substrate that has a super luminescent diode (SLD) region and a semiconductor optical amplifier (SOA) region for amplifying light generated from the SLD region, an optical waveguide that has a buried heterostructure, the buried heterostructure including an active layer extending over the SLD and SOA regions on the substrate and tapered in the SOA region; a current blocking layer formed around the active layer for blocking a current flow to layers other than the active layer, the current blocking layer including a stack of semiconductor layers having different conductivity types; and a clad layer formed on the optical waveguide and the current blocking layer.

Abstract translation: 提供了一种超低功耗的超级发光二极管，由于低电流操作的低阈值电流和高输出功率而具有低功耗，适用于外腔激光器。 用于外腔激光器的超发光二极管被分为超发光二极管（SLD）区域和半导体光放大器（SOA）区域，以提供具有低阈值电流和近似双输出功率的光源 SLD。 超发光二极管集成反射光放大器包括具有超发光二极管（SLD）区域的基板和用于放大从SLD区域产生的光的半导体光放大器（SOA）区域，具有掩埋异质结构的光波导， 包括在SLD上延伸的有源层和衬底上的SOA区域并在SOA区域中渐缩的掩埋异质结构; 电流阻挡层，形成在有源层周围，用于阻挡电流流向除有源层以外的层，电流阻挡层包括具有不同导电类型的半导体层的叠层; 以及形成在光波导和电流阻挡层上的覆层。