公开(公告)号：US07920322B2

公开(公告)日：2011-04-05

申请号：US11924772

申请日：2007-10-26

Applicant: Su Hwan Oh ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

Inventor： Su Hwan Oh ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

IPC: H01S5/00 ,  H01L29/06 ,  H01L33/20

CPC classification number: G02B6/1228 ,  G02B2006/121 ,  H01L33/0045 ,  H01S5/026 ,  H01S5/028 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/227 ,  H01S5/50

Abstract: Provided are a reflective semiconductor optical amplifier (R-SOA) and a superluminescent diode (SLD). The R-SOA includes: a substrate; an optical waveguide including a lower clad layer, an active layer independent of the polarization of light, and an upper clad layer sequentially stacked on the substrate, the optical waveguide comprising linear, curved, and tapered waveguide areas; and a current blocking layer formed around the optical waveguide to block a flow of current out of the active layer, wherein the linear and curved waveguide areas have a single buried hetero (BH) structure, and the tapered waveguide area has a dual BH structure.

Abstract translation: 提供了反射半导体光放大器（R-SOA）和超发光二极管（SLD）。 R-SOA包括：基板; 包括下包层，独立于光的偏振的有源层和顺序地堆叠在基板上的上包层的光波导，所述光波导包括线性，弯曲和锥形的波导区域; 以及形成在所述光波导周围的电流阻挡层，以阻挡所述有源层中的电流流动，其中所述线性和弯曲波导区域具有单个埋入异质（BH）结构，并且所述锥形波导区域具有双BH结构。

公开(公告)号：US08363314B2

公开(公告)日：2013-01-29

申请号：US12929970

申请日：2011-02-28

Applicant: Su Hwan Oh ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

Inventor： Su Hwan Oh ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

IPC: H01S5/227

CPC classification number: G02B6/1228 ,  G02B2006/121 ,  H01L33/0045 ,  H01S5/026 ,  H01S5/028 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/227 ,  H01S5/50

Abstract: Provided are a reflective semiconductor optical amplifier (R-SOA) and a superluminescent diode (SLD). The R-SOA includes: a substrate; an optical waveguide including a lower clad layer, an active layer independent of the polarization of light, and an upper clad layer sequentially stacked on the substrate, the optical waveguide comprising linear, curved, and tapered waveguide areas; and a current blocking layer formed around the optical waveguide to block a flow of current out of the active layer, wherein the linear and curved waveguide areas have a single buried hetero (BH) structure, and the tapered waveguide area has a dual BH structure.

Abstract translation: 提供了反射半导体光放大器（R-SOA）和超发光二极管（SLD）。 R-SOA包括：基板; 包括下包层，独立于光的偏振的有源层和顺序地堆叠在基板上的上包层的光波导，所述光波导包括线性，弯曲和锥形的波导区域; 以及形成在所述光波导周围的电流阻挡层，以阻挡所述有源层中的电流流动，其中所述线性和弯曲波导区域具有单个埋入异质（BH）结构，并且所述锥形波导区域具有双BH结构。

公开(公告)号：US20110150406A1

公开(公告)日：2011-06-23

申请号：US12929970

申请日：2011-02-28

Applicant: Su Hwan Oh ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

Inventor： Su Hwan Oh ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

IPC: G02B6/10

CPC classification number: G02B6/1228 ,  G02B2006/121 ,  H01L33/0045 ,  H01S5/026 ,  H01S5/028 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/227 ,  H01S5/50

Abstract: Provided are a reflective semiconductor optical amplifier (R-SOA) and a superluminescent diode (SLD). The R-SOA includes: a substrate; an optical waveguide including a lower clad layer, an active layer independent of the polarization of light, and an upper clad layer sequentially stacked on the substrate, the optical waveguide comprising linear, curved, and tapered waveguide areas; and a current blocking layer formed around the optical waveguide to block a flow of current out of the active layer, wherein the linear and curved waveguide areas have a single buried hetero (BH) structure, and the tapered waveguide area has a dual BH structure.

Abstract translation: 提供了反射半导体光放大器（R-SOA）和超发光二极管（SLD）。 R-SOA包括：基板; 包括下包层，独立于光的偏振的有源层和顺序地堆叠在基板上的上包层的光波导，所述光波导包括线性，弯曲和锥形的波导区域; 以及形成在所述光波导周围的电流阻挡层，以阻挡所述有源层中的电流流动，其中所述线性和弯曲波导区域具有单个埋入异质（BH）结构，并且所述锥形波导区域具有双BH结构。

公开(公告)号：US20080137180A1

公开(公告)日：2008-06-12

申请号：US11924772

申请日：2007-10-26

Applicant: Su Hwan OH ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

Inventor： Su Hwan OH ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

IPC: H01S3/00 ,  G02B6/10 ,  H01L33/00

CPC classification number: G02B6/1228 ,  G02B2006/121 ,  H01L33/0045 ,  H01S5/026 ,  H01S5/028 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/227 ,  H01S5/50

Abstract: Provided are a reflective semiconductor optical amplifier (R-SOA) and a superluminescent diode (SLD). The R-SOA includes: a substrate; an optical waveguide including a lower clad layer, an active layer independent of the polarization of light, and an upper clad layer sequentially stacked on the substrate, the optical waveguide comprising linear, curved, and tapered waveguide areas; and a current blocking layer formed around the optical waveguide to block a flow of current out of the active layer, wherein the linear and curved waveguide areas have a single buried hetero (BH) structure, and the tapered waveguide area has a dual BH structure.

Abstract translation: 提供了反射半导体光放大器（R-SOA）和超发光二极管（SLD）。 R-SOA包括：基板; 包括下包层，独立于光的偏振的有源层和顺序地堆叠在基板上的上包层的光波导，所述光波导包括线性，弯曲和锥形的波导区域; 以及形成在所述光波导周围的电流阻挡层，以阻挡所述有源层中的电流流动，其中所述线性和弯曲波导区域具有单个埋入异质（BH）结构，并且所述锥形波导区域具有双BH结构。

公开(公告)号：US08937980B2

公开(公告)日：2015-01-20

申请号：US13614280

申请日：2012-09-13

Applicant: Oh Kee Kwon ,  Su Hwan Oh ,  Young Ahn Leem ,  O-Kyun Kwon ,  Young-Tak Han ,  Yongsoon Baek ,  Yun C. Chung

Inventor： Oh Kee Kwon ,  Su Hwan Oh ,  Young Ahn Leem ,  O-Kyun Kwon ,  Young-Tak Han ,  Yongsoon Baek ,  Yun C. Chung

IPC: H01S5/00

CPC classification number: H01S5/22 ,  B82Y20/00 ,  H01S5/1039 ,  H01S5/1225 ,  H01S5/1243 ,  H01S5/2213 ,  H01S5/222 ,  H01S5/2231 ,  H01S5/3213 ,  H01S5/34306

Abstract: Distributed feedback-laser diodes are provided. The distributed feedback-laser diode may include a substrate, a lower cladding layer having a grating on the substrate, an active layer disposed on the lower cladding layer, a first upper cladding layer disposed on the active layer, a phase-shift region extending in a first direction on the first upper cladding layer, and a ridge waveguide layer extending in a second direction crossing the first direction on the phase-shift region.

Abstract translation: 提供分布式反馈激光二极管。 分布式反馈激光二极管可以包括基板，在基板上具有光栅的下包层，设置在下包层上的有源层，设置在有源层上的第一上包层， 第一上包层上的第一方向，以及在相移区域上与第一方向交叉的第二方向延伸的脊波导层。

公开(公告)号：US20130287054A1

公开(公告)日：2013-10-31

申请号：US13614280

申请日：2012-09-13

Applicant: Oh Kee KWON ,  Su Hwan Oh ,  Young Ahn Leem ,  O-Kyun Kwon ,  Young-Tak Han ,  Yongsoon Baek ,  Yun C. Chung

Inventor： Oh Kee KWON ,  Su Hwan Oh ,  Young Ahn Leem ,  O-Kyun Kwon ,  Young-Tak Han ,  Yongsoon Baek ,  Yun C. Chung

IPC: H01S5/30 ,  H01S5/34

CPC classification number: H01S5/22 ,  B82Y20/00 ,  H01S5/1039 ,  H01S5/1225 ,  H01S5/1243 ,  H01S5/2213 ,  H01S5/222 ,  H01S5/2231 ,  H01S5/3213 ,  H01S5/34306

Abstract: Distributed feedback-laser diodes are provided. The distributed feedback-laser diode may include a substrate, a lower cladding layer having a grating on the substrate, an active layer disposed on the lower cladding layer, a first upper cladding layer disposed on the active layer, a phase-shift region extending in a first direction on the first upper cladding layer, and a ridge waveguide layer extending in a second direction crossing the first direction on the phase-shift region.

Abstract translation: 提供分布式反馈激光二极管。 分布式反馈激光二极管可以包括基板，在基板上具有光栅的下包层，设置在下包层上的有源层，设置在有源层上的第一上包层， 第一上包层上的第一方向，以及在相移区域上与第一方向交叉的第二方向延伸的脊波导层。

公开(公告)号：US09042740B2

公开(公告)日：2015-05-26

申请号：US13490022

申请日：2012-06-06

Applicant: Young-Tak Han ,  Jang Uk Shin ,  Sang Ho Park ,  Oh Kee Kwon ,  Dong-Hun Lee ,  Yongsoon Baek

Inventor： Young-Tak Han ,  Jang Uk Shin ,  Sang Ho Park ,  Oh Kee Kwon ,  Dong-Hun Lee ,  Yongsoon Baek

IPC: H04B10/04 ,  H04B10/12 ,  H04B10/50 ,  G02B6/42 ,  H04B1/04

CPC classification number: G02B6/4201 ,  H03F3/24 ,  H04B2001/0408

Abstract: Disclosed is a transmitter optical module which includes a first package generating an optical signal; a second package bonded with the first package by using chip-to-chip bonding, having a silicon optical circuit platform structure, and amplifying the optical signal; and an optical waveguide forming a transmission path of the optical signal from the first package to the second package.

Abstract translation: 公开了一种发射机光学模块，其包括产生光信号的第一封装; 通过使用芯片到芯片接合与第一封装结合的第二封装，具有硅光电路平台结构，并放大光信号; 以及光波导，其形成从第一封装到第二封装的光信号的传输路径。

公开(公告)号：US20130128331A1

公开(公告)日：2013-05-23

申请号：US13532167

申请日：2012-06-25

Applicant: Young-Tak Han ,  Oh Kee Kwon ,  Jang Uk Shin ,  Sang Ho Park ,  Yongsoon Baek

Inventor： Young-Tak Han ,  Oh Kee Kwon ,  Jang Uk Shin ,  Sang Ho Park ,  Yongsoon Baek

IPC: G02F1/17

CPC classification number: G02F1/0102 ,  G02F2001/0155

Abstract: Disclosed is a transmitter optical module which includes an electro-absorption modulated laser modulating a light into an optical signal through a high-frequency electrical signal; a first sub-mount transferring the high-frequency signal to the electro-absorption modulated laser; and a second sub-mount receiving the high-frequency signal from the electro-absorption modulated laser to terminate the electro-absorption modulated laser. A length of a first wire connecting the first sub-mount and the electro-absorption modulated laser is different from a length of a second wire connecting the second sub-mount and the electro-absorption modulated laser.

Abstract translation: 公开了一种发射器光学模块，其包括通过高频电信号将光调制成光信号的电吸收调制激光; 将高频信号传送到电吸收调制激光器的第一子座; 以及从电吸收式调制激光器接收高频信号以终止电吸收调制激光器的第二子安装座。 连接第一子座和电吸收调制激光器的第一线的长度与连接第二子座和电吸收调制激光的第二线的长度不同。

公开(公告)号：US20120128290A1

公开(公告)日：2012-05-24

申请号：US13154859

申请日：2011-06-07

Applicant: Young-Tak HAN ,  Jang Uk Shin ,  Sang-Pil Han ,  Sang Ho Park ,  Yongsoon Baek

Inventor： Young-Tak HAN ,  Jang Uk Shin ,  Sang-Pil Han ,  Sang Ho Park ,  Yongsoon Baek

IPC: G02B6/12

CPC classification number: G02B6/4279 ,  G02B6/12002 ,  G02B6/12004 ,  G02B6/325 ,  G02B6/42 ,  G02B6/4201 ,  G02B6/4206 ,  G02B6/4208 ,  G02B6/4257 ,  G02B6/4265 ,  G02B6/4271 ,  G02B6/428 ,  G02B6/4281 ,  G02B2006/12092 ,  G02B2006/12135

Abstract: Provided is an optical module. The optical module includes: an optical bench having a first trench of a first depth and a second trench of a second depth that is lower than the first depth; a lens in the first trench of the optical bench; at least one semiconductor chip in the second trench of the optical bench; and a flexible printed circuit board covering an upper surface of the optical bench except for the first and second trenches, wherein the optical bench is a metal optical bench or a silicon optical bench.

Abstract translation: 提供了一种光学模块。 光学模块包括：光学台，其具有第一深度的第一沟槽和第二深度的第二沟槽，其低于第一深度; 在光学工作台的第一沟槽中的透镜; 在所述光学平台的所述第二沟槽中的至少一个半导体芯片; 以及覆盖除了第一和第二沟槽之外的光学台的上表面的柔性印刷电路板，其中所述光学台是金属光学台或硅光学台。

公开(公告)号：US20120020614A1

公开(公告)日：2012-01-26

申请号：US12987492

申请日：2011-01-10

Applicant: Young-Tak HAN ,  Jang Uk Shin ,  Sang Ho Park ,  Sang-Pil Han ,  Yongsoon Baek

Inventor： Young-Tak HAN ,  Jang Uk Shin ,  Sang Ho Park ,  Sang-Pil Han ,  Yongsoon Baek

IPC: G02B6/26 ,  B05D5/06

CPC classification number: G02B6/125 ,  G02B2006/12145 ,  G02F1/0147 ,  G02F1/3137 ,  G02F1/315 ,  G02F2202/022

Abstract: Provided are an optical switch device having a simple light path and capable of achieving high speed switching, and a method of manufacturing the optical switch device. The optical switch device comprises one or more first optical waveguides extending in a first direction, one or more second optical waveguides connected to the first optical waveguides in a second direction crossing the first direction, and one or more switching parts configured to control light transmitted in the first direction within the first optical waveguide connected with the second waveguide, to selectively reflect the light to the second waveguide extending in the second direction.

Abstract translation: 提供了一种具有简单的光路并且能够实现高速切换的光开关装置，以及制造光开关装置的方法。 光开关装置包括沿第一方向延伸的一个或多个第一光波导，在与第一方向相交的第二方向上连接到第一光波导的一个或多个第二光波导，以及一个或多个切换部，被配置为控制在 在与第二波导连接的第一光波导内的第一方向，以选择性地将光反射到沿第二方向延伸的第二波导。