公开(公告)号：US08363314B2

公开(公告)日：2013-01-29

申请号：US12929970

申请日：2011-02-28

Applicant: Su Hwan Oh ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

Inventor： Su Hwan Oh ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

IPC: H01S5/227

CPC classification number: G02B6/1228 ,  G02B2006/121 ,  H01L33/0045 ,  H01S5/026 ,  H01S5/028 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/227 ,  H01S5/50

Abstract: Provided are a reflective semiconductor optical amplifier (R-SOA) and a superluminescent diode (SLD). The R-SOA includes: a substrate; an optical waveguide including a lower clad layer, an active layer independent of the polarization of light, and an upper clad layer sequentially stacked on the substrate, the optical waveguide comprising linear, curved, and tapered waveguide areas; and a current blocking layer formed around the optical waveguide to block a flow of current out of the active layer, wherein the linear and curved waveguide areas have a single buried hetero (BH) structure, and the tapered waveguide area has a dual BH structure.

Abstract translation: 提供了反射半导体光放大器（R-SOA）和超发光二极管（SLD）。 R-SOA包括：基板; 包括下包层，独立于光的偏振的有源层和顺序地堆叠在基板上的上包层的光波导，所述光波导包括线性，弯曲和锥形的波导区域; 以及形成在所述光波导周围的电流阻挡层，以阻挡所述有源层中的电流流动，其中所述线性和弯曲波导区域具有单个埋入异质（BH）结构，并且所述锥形波导区域具有双BH结构。

公开(公告)号：US07920322B2

公开(公告)日：2011-04-05

申请号：US11924772

申请日：2007-10-26

Applicant: Su Hwan Oh ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

Inventor： Su Hwan Oh ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

IPC: H01S5/00 ,  H01L29/06 ,  H01L33/20

CPC classification number: G02B6/1228 ,  G02B2006/121 ,  H01L33/0045 ,  H01S5/026 ,  H01S5/028 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/227 ,  H01S5/50

Abstract: Provided are a reflective semiconductor optical amplifier (R-SOA) and a superluminescent diode (SLD). The R-SOA includes: a substrate; an optical waveguide including a lower clad layer, an active layer independent of the polarization of light, and an upper clad layer sequentially stacked on the substrate, the optical waveguide comprising linear, curved, and tapered waveguide areas; and a current blocking layer formed around the optical waveguide to block a flow of current out of the active layer, wherein the linear and curved waveguide areas have a single buried hetero (BH) structure, and the tapered waveguide area has a dual BH structure.

Abstract translation: 提供了反射半导体光放大器（R-SOA）和超发光二极管（SLD）。 R-SOA包括：基板; 包括下包层，独立于光的偏振的有源层和顺序地堆叠在基板上的上包层的光波导，所述光波导包括线性，弯曲和锥形的波导区域; 以及形成在所述光波导周围的电流阻挡层，以阻挡所述有源层中的电流流动，其中所述线性和弯曲波导区域具有单个埋入异质（BH）结构，并且所述锥形波导区域具有双BH结构。

公开(公告)号：US20110150406A1

公开(公告)日：2011-06-23

申请号：US12929970

申请日：2011-02-28

Applicant: Su Hwan Oh ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

Inventor： Su Hwan Oh ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

IPC: G02B6/10

CPC classification number: G02B6/1228 ,  G02B2006/121 ,  H01L33/0045 ,  H01S5/026 ,  H01S5/028 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/227 ,  H01S5/50

Abstract: Provided are a reflective semiconductor optical amplifier (R-SOA) and a superluminescent diode (SLD). The R-SOA includes: a substrate; an optical waveguide including a lower clad layer, an active layer independent of the polarization of light, and an upper clad layer sequentially stacked on the substrate, the optical waveguide comprising linear, curved, and tapered waveguide areas; and a current blocking layer formed around the optical waveguide to block a flow of current out of the active layer, wherein the linear and curved waveguide areas have a single buried hetero (BH) structure, and the tapered waveguide area has a dual BH structure.

Abstract translation: 提供了反射半导体光放大器（R-SOA）和超发光二极管（SLD）。 R-SOA包括：基板; 包括下包层，独立于光的偏振的有源层和顺序地堆叠在基板上的上包层的光波导，所述光波导包括线性，弯曲和锥形的波导区域; 以及形成在所述光波导周围的电流阻挡层，以阻挡所述有源层中的电流流动，其中所述线性和弯曲波导区域具有单个埋入异质（BH）结构，并且所述锥形波导区域具有双BH结构。

公开(公告)号：US20080137180A1

公开(公告)日：2008-06-12

申请号：US11924772

申请日：2007-10-26

Applicant: Su Hwan OH ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

Inventor： Su Hwan OH ,  Sahnggi Park ,  Yongsoon Baek ,  Kwang-Ryong Oh

IPC: H01S3/00 ,  G02B6/10 ,  H01L33/00

CPC classification number: G02B6/1228 ,  G02B2006/121 ,  H01L33/0045 ,  H01S5/026 ,  H01S5/028 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/227 ,  H01S5/50

Abstract: Provided are a reflective semiconductor optical amplifier (R-SOA) and a superluminescent diode (SLD). The R-SOA includes: a substrate; an optical waveguide including a lower clad layer, an active layer independent of the polarization of light, and an upper clad layer sequentially stacked on the substrate, the optical waveguide comprising linear, curved, and tapered waveguide areas; and a current blocking layer formed around the optical waveguide to block a flow of current out of the active layer, wherein the linear and curved waveguide areas have a single buried hetero (BH) structure, and the tapered waveguide area has a dual BH structure.

Abstract translation: 提供了反射半导体光放大器（R-SOA）和超发光二极管（SLD）。 R-SOA包括：基板; 包括下包层，独立于光的偏振的有源层和顺序地堆叠在基板上的上包层的光波导，所述光波导包括线性，弯曲和锥形的波导区域; 以及形成在所述光波导周围的电流阻挡层，以阻挡所述有源层中的电流流动，其中所述线性和弯曲波导区域具有单个埋入异质（BH）结构，并且所述锥形波导区域具有双BH结构。

公开(公告)号：US5581108A

公开(公告)日：1996-12-03

申请号：US301998

申请日：1994-09-07

Applicant: Hong-Man Kim ,  Kwang-Ryong Oh ,  Ki-Sung Park ,  Chong-Dae Park

Inventor： Hong-Man Kim ,  Kwang-Ryong Oh ,  Ki-Sung Park ,  Chong-Dae Park

IPC: G02F1/015 ,  G02F1/313 ,  H01L31/00 ,  G02B6/26

CPC classification number: G02F1/3138 ,  G02F2001/0152 ,  G02F2202/102

Abstract: Disclosed is an optical switch device for totally reflecting an incident light therein in accordance with a change in refractive index occurring owing to current application, which is manufactured by the steps of: sequentially forming an optical waveguide layer, an n-InP clad layer and an n-InGaAs cap layer on a main surface of an n-InP substrate using an epitaxial growing; selectively etching the n-InGaAs cap layer to form an opening tapered downward; diffusing an impurity into the n-InP clad layer through the opening and into the n-InGaAs cap layer to a predetermined depth from a surface thereof so as to form a first impurity diffused region in the n-InP clad layer under the opening and to form a second impurity diffused region along the surface of the n-InGaAs cap layer; etching the layers on the optical waveguide layer using a mask to form a ridge-shaped waveguide; and forming electrodes on the n-InGaAs cap layer and an exposed surface of the n-InP clad layer and on a surface which is opposite to the main surface of the n-InP substrate. Also, before forming the n-InGaAs cap layer, a p-InP current blocking layer is formed between the n-InP clad layer and the n-InGaAs cap layer so as to prevent a current from being dispersed other portions excluding the impurity diffused portion.

Abstract translation: 公开了一种用于根据由于电流施加而发生的折射率的变化而全部反射入射光的光学开关装置，其通过以下步骤制造：顺序地形成光波导层，n-InP覆盖层和 使用外延生长在n-InP衬底的主表面上的n-InGaAs覆盖层; 选择性地蚀刻n-InGaAs覆盖层以形成向下锥形的开口; 通过开口将杂质扩散到n-InP包层中并从其表面扩散到n-InGaAs覆盖层至预定深度，以便在开口下方的n-InP包层中形成第一杂质扩散区域，并且 沿着n-InGaAs覆盖层的表面形成第二杂质扩散区域; 使用掩模蚀刻光波导层上的层以形成脊形波导; 以及在n-InGaAs覆盖层上形成电极以及n-InP覆盖层的暴露表面和与n-InP衬底的主表面相对的表面上形成电极。 此外，在形成n-InGaAs覆盖层之前，在n-InP覆盖层和n-InGaAs覆盖层之间形成p-InP电流阻挡层，以防止电流分散除杂质扩散部分之外的其它部分 。

公开(公告)号：US06980345B2

公开(公告)日：2005-12-27

申请号：US10672220

申请日：2003-09-26

Applicant: Hyun-Soo Kim ,  Jong-Hoi Kim ,  Eun-Deok Sim ,  Kang-Ho Kim ,  Oh-Kee Kwon ,  Kwang-Ryong Oh

Inventor： Hyun-Soo Kim ,  Jong-Hoi Kim ,  Eun-Deok Sim ,  Kang-Ho Kim ,  Oh-Kee Kwon ,  Kwang-Ryong Oh

IPC: H01S5/34 ,  G02F1/03 ,  G02F1/07 ,  H01S3/13 ,  H01S5/50

CPC classification number: H01S5/50 ,  H01S5/5072

Abstract: Disclosed is a high speed optical signal processor which includes a saturable absorber area including a substrate, an active layer, a clad layer and a first upper electrode which are sequentially formed on one face of the substrate, and a first lower electrode formed on the other face of the substrate; and a gain-clamped optical amplifier area including a substrate having a diffraction grating for generating a laser beam, an active layer, a clad layer and a second upper electrode which are sequentially formed on one face of the substrate, and a second lower electrode formed on the other face of the substrate, the second upper electrode being isolated from the first upper electrode of the saturable absorber area.

Abstract translation: 公开了一种高速光信号处理器，其包括可饱和吸收体区域，其包括依次形成在基板的一个面上的基板，有源层，覆盖层和第一上电极以及形成在另一面上的第一下电极 基材面; 以及增益钳位的光放大器区域，包括具有用于产生激光束的衍射光栅的衬底，有源层，覆盖层和第二上电极，所述激光束被顺序地形成在衬底的一个面上，第二下电极形成 在基板的另一面上，第二上部电极与可饱和吸收体区域的第一上部电极隔离。

公开(公告)号：US20110110391A1

公开(公告)日：2011-05-12

申请号：US13002026

申请日：2008-11-24

Applicant: Kwang-Ryong Oh ,  Dong-Churl Kim ,  Kisoo Kim

Inventor： Kwang-Ryong Oh ,  Dong-Churl Kim ,  Kisoo Kim

IPC: H01S5/323 ,  H01S5/10

CPC classification number: H01S5/1014 ,  B82Y20/00 ,  G02B6/1225 ,  G02B19/0028 ,  G02B19/0052 ,  G02B27/0977 ,  G02B27/0988 ,  G02B27/0994 ,  H01S5/0655 ,  H01S5/10 ,  H01S5/1025 ,  H01S5/12

Abstract: Provided is a semiconductor laser diode having a waveguide lens. The semiconductor laser diode includes at least one first waveguide having a narrow width, at least one second waveguide having a wide width wider, and at least one waveguide lens having an increasing width from the first waveguide toward the second waveguide and connecting the first waveguide to the second waveguide. Sidewalls of the waveguide lens connecting the first waveguide to the second waveguide may be curved. The second waveguide may be a waveguide providing an optical gain.

Abstract translation: 提供了具有波导透镜的半导体激光二极管。 半导体激光二极管包括具有窄宽度的至少一个第一波导，宽宽度更宽的至少一个第二波导和从第一波导朝向第二波导的宽度增加的至少一个波导透镜，并将第一波导连接到 第二波导。 将第一波导连接到第二波导的波导透镜的侧壁可以是弯曲的。 第二波导可以是提供光学增益的波导。

公开(公告)号：US06639735B2

公开(公告)日：2003-10-28

申请号：US09927221

申请日：2001-08-10

Applicant: Kyung-Hyun Park ,  Jong-Hoi Kim ,  Yong-Soon Baek ,  Moon-Ho Park ,  Sung-Bock Kim ,  Kwang-Ryong Oh

Inventor： Kyung-Hyun Park ,  Jong-Hoi Kim ,  Yong-Soon Baek ,  Moon-Ho Park ,  Sung-Bock Kim ,  Kwang-Ryong Oh

IPC: G02B308

CPC classification number: G02B6/1228 ,  G02B6/12004 ,  G02B2006/12176 ,  H01S5/1014 ,  H01S5/1032 ,  H01S5/2081

Abstract: Disclosed is a method for the fabrication of a spot-size converter with a lateral-tapered waveguide (or an active layer), which utilizes a mask during a lithographic process wherein the mask has a pad that can absorb strain to be occurred during forming a lateral-tapered waveguide pattern at its distal end and the lateral-tapered waveguide is fabricated by forming the distal end on the order of about 0.6 &mgr;m in width followed by forming the lateral-tapered waveguide on the order of 0.1 &mgr;m using an wet etching. Thus, it is possible to reduce a fabrication cost because it is free from a high-resolution electron beam lithography and a stepper, and hence enhance a reproducibility of the lateral-tapered waveguide because it is free from an excessive wet etching during the use of a contact exposure equipment. Further, it is possible to integrate the spot-size converter fabricated by the above with an optical device, resulting in an increased position adjustment and reproducibility of the spot-size converter, which in turn, leads to increase in yield for the optical device.

公开(公告)号：US07136549B2

公开(公告)日：2006-11-14

申请号：US10909063

申请日：2004-07-29

Applicant: Oh-Kee Kwon ,  Kang-Ho Kim ,  Kwang-Ryong Oh ,  Jonghoi Kim ,  Hyun-Soo Kim

Inventor： Oh-Kee Kwon ,  Kang-Ho Kim ,  Kwang-Ryong Oh ,  Jonghoi Kim ,  Hyun-Soo Kim

IPC: G02B6/42

CPC classification number: G02F1/295 ,  G02F2001/0157

Abstract: An optical modulator using a dynamic single mode laser diode (DSM-LD) integrated with a deflector is disclosed. The optical modulator for coupling a light beam to an optical fiber, the optical modulator includes: a laser diode for generating the light beam; and a deflector for deflecting a direction of the light beam according to an electric signal externally applied and outputting the defected light beam to the optical fiber, wherein the laser diode and the deflector are integrated with a multi-layer semiconductor structure in such a way that the light beam is modulated by changing a defection angle of the deflector.

Abstract translation: 公开了一种使用与偏转器集成的动态单模激光二极管（DSM-LD）的光调制器。 用于将光束耦合到光纤的光调制器，所述光调制器包括：用于产生所述光束的激光二极管; 以及偏转器，用于根据外部施加的电信号偏转光束的方向，并将缺陷光束输出到光纤，其中激光二极管和偏转器与多层半导体结构集成，使得 通过改变偏转器的偏角来调制光束。

公开(公告)号：US20050084197A1

公开(公告)日：2005-04-21

申请号：US10909063

申请日：2004-07-29

Applicant: Oh-Kee Kwon ,  Kang-Ho Kim ,  Kwang-Ryong Oh ,  Jonghoi Kim ,  Hyun-Soo Kim

Inventor： Oh-Kee Kwon ,  Kang-Ho Kim ,  Kwang-Ryong Oh ,  Jonghoi Kim ,  Hyun-Soo Kim

IPC: G02B6/42 ,  G02F1/015 ,  G02F1/025 ,  G02F1/295 ,  G02F1/313 ,  H01S5/026 ,  H01S5/10

CPC classification number: G02F1/295 ,  G02F2001/0157

Abstract: An optical modulator using a dynamic single mode laser diode (DSM-LD) integrated with a deflector is disclosed. The optical modulator for coupling a light beam to an optical fiber, the optical modulator includes: a laser diode for generating the light beam; and a deflector for deflecting a direction of the light beam according to an electric signal externally applied and outputting the defected light beam to the optical fiber, wherein the laser diode and the deflector are integrated with a multi-layer semiconductor structure in such a way that the light beam is modulated by changing a defection angle of the deflector.

Abstract translation: 公开了一种使用与偏转器集成的动态单模激光二极管（DSM-LD）的光调制器。 用于将光束耦合到光纤的光调制器，所述光调制器包括：用于产生所述光束的激光二极管; 以及偏转器，用于根据外部施加的电信号偏转光束的方向，并将缺陷光束输出到光纤，其中激光二极管和偏转器与多层半导体结构集成，使得 通过改变偏转器的偏角来调制光束。