公开(公告)号：US07879700B2

公开(公告)日：2011-02-01

申请号：US10547070

申请日：2004-02-24

申请人： Ui-Jin Chung ,  Dong-Byum Kim ,  Su-Gyeong Lee ,  Myung-Koo Kang ,  Hyun-Jae Kim

发明人： Ui-Jin Chung ,  Dong-Byum Kim ,  Su-Gyeong Lee ,  Myung-Koo Kang ,  Hyun-Jae Kim

IPC分类号： H01L21/322 ,  H01L21/428

CPC分类号： B23K26/0676 ,  B23K26/06 ,  B23K26/064 ,  B23K26/0643 ,  B23K26/066 ,  B23K26/067 ,  B23K26/0732 ,  B23K2101/40 ,  H01L21/02532 ,  H01L21/0268 ,  H01L21/02686 ,  H01L21/02691 ,  H01L21/268 ,  H01L27/1285

摘要： A silicon crystallization system includes a beam generator generating a laser beam, first and second optical units for controlling the laser beam from the beam generator; and a stage for mounting a panel including an amorphous silicon layer to be polycrystallized by the laser beam from the optical units. The first optical unit makes the laser beam have a transverse edge and a longitudinal edge longer than the transverse edge, and the second optical unit makes the laser beam have a transverse edge and a longitudinal edge shorter than the transverse edge.

摘要翻译： 硅结晶系统包括产生激光束的光束发生器，用于控制来自光束发生器的激光束的第一和第二光学单元; 以及用于安装包括由来自光学单元的激光束多晶化的非晶硅层的面板的台。 第一光学单元使得激光束具有比横向边缘长的横向边缘和纵向边缘，并且第二光学单元使得激光束具有比横向边缘更短的横向边缘和纵向边缘。

公开(公告)号：US20070042575A1

公开(公告)日：2007-02-22

申请号：US10549334

申请日：2004-03-12

申请人： Su-Gyeong Lee ,  Dong-Byum Kim ,  Myung-Koo Kang ,  Ui-Jin Chung ,  Hyun-Jae Kim

发明人： Su-Gyeong Lee ,  Dong-Byum Kim ,  Myung-Koo Kang ,  Ui-Jin Chung ,  Hyun-Jae Kim

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02675 ,  B23K26/0604 ,  B23K26/067 ,  B23K26/0673 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/2026 ,  H01L21/268

摘要： A plurality laser beams generated by a plurality of beam generators are synthesized by a beam synthesizer. The synthesized beam is splitted into a plurality of beamlets and provided for a plurality of optical units controlling the beamlets. Each beamlet controlled by each optical unit is illuminated onto an amorphous silicon layer deposited on a substrate that is mounted on a plurality of stages to be polycrystallized.

摘要翻译： 由多个光束发生器产生的多个激光束由光束合成器合成。 合成的光束被分裂成多个子束并且被设置用于控制子束的多个光学单元。 由每个光学单元控制的每个子束被照射到沉积在基板上的非晶硅层上，所述非晶硅层安装在多个阶段上以进行多晶化。

公开(公告)号：US20060148165A1

公开(公告)日：2006-07-06

申请号：US10547070

申请日：2004-02-24

申请人： Ui-Jin Chung ,  Dong-Byum Kim ,  Su-Gyeong Lee ,  Myung-Koo Kang ,  Hyun-Jae Kim

发明人： Ui-Jin Chung ,  Dong-Byum Kim ,  Su-Gyeong Lee ,  Myung-Koo Kang ,  Hyun-Jae Kim

IPC分类号： H01L21/8238

CPC分类号： B23K26/0676 ,  B23K26/06 ,  B23K26/064 ,  B23K26/0643 ,  B23K26/066 ,  B23K26/067 ,  B23K26/0732 ,  B23K2101/40 ,  H01L21/02532 ,  H01L21/0268 ,  H01L21/02686 ,  H01L21/02691 ,  H01L21/268 ,  H01L27/1285

摘要： A silicon crystallization system includes a beam generator generating a laser beam, first and second optical units for controlling the laser beam from the beam generator; and a stage for mounting a panel including an amorphous silicon layer to be polycrystallized by the laser beam from the optical units. The first optical unit makes the laser beam have a transverse edge and a longitudinal edge longer than the transverse edge, and the second optical unit makes the laser beam have a transverse edge and a longitudinal edge shorter than the transverse edge.

摘要翻译： 硅结晶系统包括产生激光束的光束发生器，用于控制来自光束发生器的激光束的第一和第二光学单元; 以及用于安装包括由来自光学单元的激光束多晶化的非晶硅层的面板的台。 第一光学单元使得激光束具有比横向边缘长的横向边缘和纵向边缘，并且第二光学单元使得激光束具有比横向边缘更短的横向边缘和纵向边缘。

公开(公告)号：US20060228908A1

公开(公告)日：2006-10-12

申请号：US11234609

申请日：2005-09-23

申请人： Se-Jin Chung ,  Chi-Woo Kim ,  Ui-Jin Chung ,  Dong-Byum Kim

发明人： Se-Jin Chung ,  Chi-Woo Kim ,  Ui-Jin Chung ,  Dong-Byum Kim

IPC分类号： H01L21/00

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78606 ,  H01L29/78675

摘要： In a method of manufacturing a polysilicon thin film and a method of manufacturing a TFT having the thin film, a laser beam is irradiated on a portion of an amorphous silicon thin film to liquefy the portion of the amorphous silicon thin film. The amorphous silicon thin film is on a first end portion of a substrate. The liquefied silicon is crystallized to form silicon grains. The laser beam is shifted from the first end portion towards a second end portion of the substrate opposite the first end portion by an interval in a first direction. The laser beam is then irradiated onto a portion of the amorphous silicon thin film adjacent to the silicon grains to form a first polysilicon thin film. Therefore, electrical characteristics of the amorphous silicon thin film may be improved.

公开(公告)号：US20060240608A1

公开(公告)日：2006-10-26

申请号：US11472177

申请日：2006-06-21

申请人： Dong-Byum Kim ,  Se-Jin Chung ,  Ui-Jin Chung

发明人： Dong-Byum Kim ,  Se-Jin Chung ,  Ui-Jin Chung

IPC分类号： H01L21/84 ,  H01L21/00

CPC分类号： H01L21/02686 ,  B23K26/0622 ,  B23K26/067 ,  B23K26/0673 ,  B23K26/0732 ,  B23K26/0736 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026 ,  H01L29/66765 ,  H01L29/78678

摘要： A light having a pulse frequency higher than about 300 Hz is generated. The light is irradiated on an amorphous silicon thin film for a predetermined time period to form an initial polysilicon crystal. The light is transported in a predetermined direction to grow the initial polysilicon crystal. A laser beam having a decreased output energy is irradiated on the amorphous silicon thin film to crystallize the amorphous silicon thin film to a polysilicon thin film so that the load of an apparatus for generating the laser beam is decreased, and the lifetime of the apparatus for generating the laser beam increases.

摘要翻译： 产生脉冲频率高于约300Hz的光。 光在非晶硅薄膜上照射预定时间以形成初始多晶硅晶体。 光沿预定方向输送以生长初始多晶硅晶体。 具有降低的输出能量的激光束被照射在非晶硅薄膜上，以将非晶硅薄膜结晶成多晶硅薄膜，使得用于产生激光束的装置的负载减小，并且该装置的寿命 产生激光束增加。

公开(公告)号：US20050181553A1

公开(公告)日：2005-08-18

申请号：US10844998

申请日：2004-05-13

申请人： Dong-Byum Kim ,  Se-Jin Chung ,  Ui-Jin Chung

发明人： Dong-Byum Kim ,  Se-Jin Chung ,  Ui-Jin Chung

IPC分类号： H01L21/324 ,  B23K26/06 ,  B23K26/067 ,  B23K26/073 ,  C30B29/06 ,  C30B30/00 ,  C30B35/00 ,  H01L21/20 ,  H01L21/336 ,  H01L29/04 ,  H01L29/786

CPC分类号： H01L21/02686 ,  B23K26/0622 ,  B23K26/067 ,  B23K26/0673 ,  B23K26/0732 ,  B23K26/0736 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026 ,  H01L29/66765 ,  H01L29/78678

摘要： A light having a pulse frequency higher than about 300 Hz is generated. The light is irradiated on an amorphous silicon thin film for a predetermined time period to form an initial polysilicon crystal. The light is transported in a predetermined direction to grow the initial polysilicon crystal. A laser beam having a decreased output energy is irradiated on the amorphous silicon thin film to crystallize the amorphous silicon thin film to a polysilicon thin film so that the load of an apparatus for generating the laser beam is decreased, and the lifetime of the apparatus for generating the laser beam increases.

摘要翻译： 产生脉冲频率高于约300Hz的光。 光在非晶硅薄膜上照射预定时间以形成初始多晶硅晶体。 光沿预定方向输送以生长初始多晶硅晶体。 具有降低的输出能量的激光束被照射在非晶硅薄膜上，以将非晶硅薄膜结晶成多晶硅薄膜，使得用于产生激光束的装置的负载减小，并且该装置的寿命 产生激光束增加。

公开(公告)号：US07557050B2

公开(公告)日：2009-07-07

申请号：US11234609

申请日：2005-09-23

申请人： Se-Jin Chung ,  Chi-Woo Kim ,  Ui-Jin Chung ,  Dong-Byum Kim

发明人： Se-Jin Chung ,  Chi-Woo Kim ,  Ui-Jin Chung ,  Dong-Byum Kim

IPC分类号： H01L21/00

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78606 ,  H01L29/78675

摘要： In a method of manufacturing a polysilicon thin film and a method of manufacturing a TFT having the thin film, a laser beam is irradiated on a portion of an amorphous silicon thin film to liquefy the portion of the amorphous silicon thin film. The amorphous silicon thin film is on a first end portion of a substrate. The liquefied silicon is crystallized to form silicon grains. The laser beam is shifted from the first end portion towards a second end portion of the substrate opposite the first end portion by an interval in a first direction. The laser beam is then irradiated onto a portion of the amorphous silicon thin film adjacent to the silicon grains to form a first polysilicon thin film. Therefore, electrical characteristics of the amorphous silicon thin film may be improved.

摘要翻译： 在制造多晶硅薄膜的方法和制造具有薄膜的TFT的方法中，激光束被照射在非晶硅薄膜的一部分上以使非晶硅薄膜的部分液化。 非晶硅薄膜位于基板的第一端部上。 液化硅结晶形成硅晶粒。 激光束从第一端部朝向与第一端部相反的第二端部朝向第一方向的间隔移动。 然后将激光束照射到与硅晶粒相邻的非晶硅薄膜的一部分上以形成第一多晶硅薄膜。 因此，可以提高非晶硅薄膜的电特性。

公开(公告)号：US20090275178A1

公开(公告)日：2009-11-05

申请号：US12490236

申请日：2009-06-23

申请人： Se-Jin CHUNG ,  Chi-Woo Kim ,  Ui-Jin Chung ,  Dong-Byum Kim

发明人： Se-Jin CHUNG ,  Chi-Woo Kim ,  Ui-Jin Chung ,  Dong-Byum Kim

IPC分类号： H01L21/336 ,  H01L21/268

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78606 ,  H01L29/78675

摘要： In a method of manufacturing a polysilicon thin film and a method of manufacturing a TFT having the thin film, a laser beam is irradiated on a portion of an amorphous silicon thin film to liquefy the portion of the amorphous silicon thin film. The amorphous silicon thin film is on a first end portion of a substrate. The liquefied silicon is crystallized to form silicon grains. The laser beam is shifted from the first end portion towards a second end portion of the substrate opposite the first end portion by an interval in a first direction. The laser beam is then irradiated onto a portion of the amorphous silicon thin film adjacent to the silicon grains to form a first polysilicon thin film. Therefore, electrical characteristics of the amorphous silicon thin film may be improved.

摘要翻译： 在制造多晶硅薄膜的方法和制造具有薄膜的TFT的方法中，激光束被照射在非晶硅薄膜的一部分上以使非晶硅薄膜的部分液化。 非晶硅薄膜位于基板的第一端部上。 液化硅结晶形成硅晶粒。 激光束从第一端部朝向与第一端部相反的第二端部朝向第一方向的间隔移动。 然后将激光束照射到与硅晶粒相邻的非晶硅薄膜的一部分上以形成第一多晶硅薄膜。 因此，可以提高非晶硅薄膜的电特性。

公开(公告)号：US20050173752A1

公开(公告)日：2005-08-11

申请号：US11029011

申请日：2005-01-05

申请人： Ui-Jin Chung ,  Myung-Koo Kang ,  Jae-Bok Lee

发明人： Ui-Jin Chung ,  Myung-Koo Kang ,  Jae-Bok Lee

IPC分类号： H01L29/786 ,  B23K26/06 ,  G02F1/1368 ,  G03F1/00 ,  G09F9/00 ,  H01L21/027 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/788

CPC分类号： H01L21/0268 ,  B23K26/066 ,  H01L21/2026 ,  H01L27/1285

摘要： An optic mask for crystallizing amorphous silicon comprises a first slit region including a plurality of slits regularly arranged for defining incident region of laser beam, wherein the slits of the first slit region are formed to slope by a predetermined angle to the direction of transfer of the optic mask in crystallization process, and wherein the slits of the first slit region includes a first slit having a first length and a second slit having a second length which is longer than the first length.

摘要翻译： 用于结晶非晶硅的光学掩模包括：第一狭缝区域，其包括规则地布置用于限定激光束的入射区域的多个狭缝，其中，所述第一狭缝区域的狭缝形成为与所述第一狭缝区域的传送方向倾斜预定角度 并且其中所述第一狭缝区域的狭缝包括具有第一长度的第一狭缝和具有比所述第一长度长的第二长度的第二狭缝。

公开(公告)号：US07858450B2

公开(公告)日：2010-12-28

申请号：US11029011

申请日：2005-01-05

申请人： Ui-Jin Chung ,  Myung-Koo Kang ,  Jae-Bok Lee

发明人： Ui-Jin Chung ,  Myung-Koo Kang ,  Jae-Bok Lee

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L21/0268 ,  B23K26/066 ,  H01L21/2026 ,  H01L27/1285

摘要： An optic mask for crystallizing amorphous silicon comprises a first slit region including a plurality of slits regularly arranged for defining incident region of laser beam, wherein the slits of the first slit region are formed to slope by a predetermined angle to the direction of transfer of the optic mask in crystallization process, and wherein the slits of the first slit region includes a first slit having a first length and a second slit having a second length which is longer than the first length.

摘要翻译： 用于结晶非晶硅的光学掩模包括：第一狭缝区域，其包括规则地布置用于限定激光束的入射区域的多个狭缝，其中，所述第一狭缝区域的狭缝形成为与所述第一狭缝区域的传送方向倾斜预定角度 并且其中所述第一狭缝区域的狭缝包括具有第一长度的第一狭缝和具有比所述第一长度长的第二长度的第二狭缝。