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17 条记录 (耗时 0.019 秒)

    Novel reactive yellow dye compounds and mixture thereof
    1.
    发明申请
    Novel reactive yellow dye compounds and mixture thereof 审中-公开
    新型活性黄色染料化合物及其混合物

    公开(公告)号：US20060185101A1

    公开(公告)日：2006-08-24

    申请号：US11338998

    申请日：2006-01-25

    申请人： Sung Cho ,  Woo Yoon ,  Jun Kim ,  Sung Myung

    发明人： Sung Cho ,  Woo Yoon ,  Jun Kim ,  Sung Myung

    IPC分类号： C09B62/00

    CPC分类号： C09B67/0047

    摘要： Provided is a reactive dye mixture, comprising (i) one or more reactive dyes represented by Formula 1, and (ii) one or more reactive dyes represented by Formula 2: The dye mixture of the present invention can realize a color that is difficult to be achieved by a single dye when dyeing a fiber material containing nitrogen or hydroxyl group, particularly a cellulose fiber material, exhibits a superior absorptivity and fixability, particularly very high light fastness and wet fastness, and thus provides a variety of balanced physical properties which are required in dyeing.

    摘要翻译： 提供了一种活性染料混合物，其包含（i）由式1表示的一种或多种活性染料和（ii）由式2表示的一种或多种活性染料：本发明的染料混合物可以实现难以 在染色含有氮或羟基的纤维材料（特别是纤维素纤维材料）时，可以通过单一染料实现，具有优异的吸收性和定影性，特别是耐光牢度和耐湿牢度特别好，因此提供了各种平衡的物理性能 染色需要

    GRAPHENE-ENCAPSULATED NANOPARTICLE-BASED BIOSENSOR FOR THE SELECTIVE DETECTION OF BIOMARKERS
    2.
    发明申请
    GRAPHENE-ENCAPSULATED NANOPARTICLE-BASED BIOSENSOR FOR THE SELECTIVE DETECTION OF BIOMARKERS 有权
    用于生物标志物选择性检测的基于纳帕纳基的生物传感器

    公开(公告)号：US20120220053A1

    公开(公告)日：2012-08-30

    申请号：US13400021

    申请日：2012-02-17

    申请人： Ki-Bum Lee ,  Sung Myung ,  Aniruddh Solanki

    发明人： Ki-Bum Lee ,  Sung Myung ,  Aniruddh Solanki

    IPC分类号： G01N27/00 ,  G01N27/414 ,  H01L21/335 ,  B82Y40/00 ,  B82Y99/00

    CPC分类号： B82Y30/00 ,  G01N27/4145 ,  G01N27/4146 ,  H01L29/4908 ,  H01L29/7869 ,  H01L29/78696

    摘要： A field effect transistor (FET) with a source electrode and a drain electrode distanced apart from each other on a semi-conductor substrate, and a gate electrode consisting of a uniform layer of reduced graphene oxide encapsulated semiconductor nanoparticles (rGO-NPs), wherein the gate electrode is disposed between and contacts both the source and drain electrodes. Methods of making and assay methods using the FETs are also disclosed, including methods in which the rGO-NPs are functionalized with binding partners for biomarkers.

    摘要翻译： 具有在半导体衬底上彼此分开的源电极和漏电极的场效应晶体管（FET）和由均匀的还原型氧化烯石氧化物封装的半导体纳米颗粒层（rGO-NP）组成的栅电极，其中 栅电极设置在源极和漏极之间并且与源电极和漏电极接触。 还公开了使用FET的制备方法和测定方法，包括其中rGO-NPs用于生物标志物的结合伴侣功能化的方法。

    Method For Adhering Nanostructures to End of Probe of Microscope and Microscope Having Probe Made By the Same Method
    6.
    发明申请
    Method For Adhering Nanostructures to End of Probe of Microscope and Microscope Having Probe Made By the Same Method 审中-公开
    将纳米结构粘附到具有相同方法制成的探针的显微镜和显微镜的探针末端的方法

    公开(公告)号：US20080093550A1

    公开(公告)日：2008-04-24

    申请号：US11667551

    申请日：2005-11-11

    申请人： Seung-Hun Hong ,  Dai-Sik Kim ,  Sung Myung ,  Na-Rae Cho ,  Jin-Eun Kim

    发明人： Seung-Hun Hong ,  Dai-Sik Kim ,  Sung Myung ,  Na-Rae Cho ,  Jin-Eun Kim

    IPC分类号： G21K5/04 ,  B05D1/32

    CPC分类号： G01Q70/18

    摘要： There is provided a method for selectively adsorbing nano-structures on the end of the probe of a scanning probe microscope. The method includes the steps of: forming the adsorbing prevention coating layer on the probe surface of the scanning probe microscope; removing the adsorbing prevention coating layer formed on the end of the probe; and adsorbing nano-structures on the end of the probe at which the adsorbing prevention coating layer is removed, in the solution or the gas containing nano-structures.

    摘要翻译： 提供了在扫描探针显微镜的探针末端选择性吸附纳米结构的方法。 该方法包括以下步骤：在扫描探针显微镜的探针表面上形成防吸附涂层; 去除形成在探针末端的吸附防止涂层; 并且在溶液或含有纳米结构的气体中，在除去吸附防止涂层的探针的末端上吸附纳米结构。

    Semiconductor memory devices and methods of manufacturing and operating same
    8.
    发明授权
    Semiconductor memory devices and methods of manufacturing and operating same 有权
    半导体存储器件及其制造和操作方法

    公开(公告)号：US08558303B2

    公开(公告)日：2013-10-15

    申请号：US13200363

    申请日：2011-09-23

    申请人： Seunghun Hong ,  Sung Myung ,  Jiwoon Im ,  Minbaek Lee

    发明人： Seunghun Hong ,  Sung Myung ,  Jiwoon Im ,  Minbaek Lee

    IPC分类号： H01L29/788

    CPC分类号： H01L29/792 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/42332 ,  H01L29/42348 ,  H01L29/7881 ,  H01L51/0048 ,  H01L51/0541

    摘要： A semiconductor device and methods of manufacturing and operating the semiconductor device may be disclosed. The semiconductor device may comprise different nanostructures. The semiconductor device may have a first element formed of nanowires and a second element formed of nanoparticles. The nanowires may be ambipolar carbon nanotubes (CNTs). The first element may be a channel layer. The second element may be a charge trap layer. In this regard, the semiconductor device may be a transistor or a memory device.

    摘要翻译： 可以公开半导体器件以及制造和操作半导体器件的方法。 半导体器件可以包括不同的纳米结构。 半导体器件可以具有由纳米线形成的第一元件和由纳米粒子形成的第二元件。 纳米线可以是双极碳纳米管（CNTs）。 第一元件可以是沟道层。 第二元件可以是电荷陷阱层。 在这方面，半导体器件可以是晶体管或存储器件。

    Reconfigurable semiconductor device
    9.
    发明授权
    Reconfigurable semiconductor device 有权
    可重构半导体器件

    公开(公告)号：US08350602B2

    公开(公告)日：2013-01-08

    申请号：US13089206

    申请日：2011-04-18

    申请人： Seunghun Hong ,  Sung Myung ,  Kwang Heo

    发明人： Seunghun Hong ,  Sung Myung ,  Kwang Heo

    IPC分类号： H03K3/01

    CPC分类号： H01L29/7883 ,  B82Y10/00 ,  H01L21/28273 ,  H01L29/42328 ,  H01L29/42332 ,  H01L29/7887

    摘要： A reconfigurable semiconductor device is disclosed. The semiconductor device includes a substrate, a first insulating material formed on the substrate, two channels having different polarities, a plurality of terminal electrodes formed on the insulating material and coupled in common with the channels at their opposite ends, a second insulating material formed on the terminal electrodes, and a control gate formed on the second insulating material. The channels have different polarity and a charge storage layer is formed inside the second insulating material. The control gate is applied with a forward bias or a reverse bias and then the bias is cut off. The voltage-current characteristics of the semiconductor device are changed according to an electrical charge created in the charge storage layer.

    摘要翻译： 公开了可重新配置的半导体器件。 该半导体器件包括基板，形成在基板上的第一绝缘材料，具有不同极性的两个通道，形成在绝缘材料上的多个端子电极，并在其相对端与通道共同地连接，第二绝缘材料形成在 端子电极和形成在第二绝缘材料上的控制栅极。 通道具有不同的极性，并且在第二绝缘材料内形成电荷存储层。 控制栅极被施加正向偏压或反向偏压，然后偏压被切断。 半导体器件的电压 - 电流特性根据在电荷存储层中产生的电荷而改变。

    Reconfigurable semiconductor device
    10.
    发明授权
    Reconfigurable semiconductor device 有权
    可重构半导体器件

    公开(公告)号：US07968935B2

    公开(公告)日：2011-06-28

    申请号：US12197961

    申请日：2008-08-25

    申请人： Seunghun Hong ,  Sung Myung ,  Kwang Heo

    发明人： Seunghun Hong ,  Sung Myung ,  Kwang Heo

    IPC分类号： H01L29/792 ,  H01L21/28

    CPC分类号： H01L29/7883 ,  B82Y10/00 ,  H01L21/28273 ,  H01L29/42328 ,  H01L29/42332 ,  H01L29/7887

    摘要： A reconfigurable semiconductor device is disclosed. The semiconductor device includes a substrate, a first insulating material formed on the substrate, two channels having different polarities, a plurality of terminal electrodes formed on the insulating material and coupled in common with the channels at their opposite ends, a second insulating material formed on the terminal electrodes, and a control gate formed on the second insulating material. The channels have different polarity and a charge storage layer is formed inside the second insulating material. The control gate is applied with a forward bias or a reverse bias and then the bias is cut off. The voltage-current characteristics of the semiconductor device are changed according to an electrical charge created in the charge storage layer.

    摘要翻译： 公开了可重新配置的半导体器件。 该半导体器件包括基板，形成在基板上的第一绝缘材料，具有不同极性的两个通道，形成在绝缘材料上的多个端子电极，并在其相对端与通道共同地连接，第二绝缘材料形成在 端子电极和形成在第二绝缘材料上的控制栅极。 通道具有不同的极性，并且在第二绝缘材料内形成电荷存储层。 控制栅极被施加正向偏压或反向偏压，然后偏压被切断。 半导体器件的电压 - 电流特性根据在电荷存储层中产生的电荷而改变。