公开(公告)号：US20110062445A1

公开(公告)日：2011-03-17

申请号：US12952744

申请日：2010-11-23

申请人： Min-Seok OH ,  Bong-Kyu SHIN ,  Sang-Gab KIM ,  Eun-Guk LEE ,  Hong-Kee CHIN ,  Yu-Gwang JEONG ,  Seung-Ha CHOI

发明人： Min-Seok OH ,  Bong-Kyu SHIN ,  Sang-Gab KIM ,  Eun-Guk LEE ,  Hong-Kee CHIN ,  Yu-Gwang JEONG ,  Seung-Ha CHOI

IPC分类号： H01L29/739

CPC分类号： G02F1/136227 ,  G02F1/13439 ,  G02F2201/50

摘要： A method of forming a display substrate includes forming an array layer on a substrate, forming a passivation layer on the array layer, forming a photoresist pattern on the passivation layer corresponding to a gate line, a source line and a thin-film transistor of the array layer, etching the passivation layer using the photoresist pattern as a mask, Non-uniformly surface treating a surface of the photoresist pattern, forming a transparent electrode layer on the substrate having the surface-treated photoresist pattern formed thereon and forming a pixel electrode. The forming a pixel electrode includes removing the photoresist pattern and the transparent electrode layer, such as by infiltrating a strip solution into the surface-treated photoresist pattern.

摘要翻译： 形成显示基板的方法包括在基板上形成阵列层，在阵列层上形成钝化层，在对应于栅极线，源极线和薄膜晶体管的钝化层上形成光致抗蚀剂图案 使用光致抗蚀剂图案作为掩模蚀刻钝化层，对光致抗蚀剂图案的表面进行不均匀的表面处理，在其上形成有表面处理的光致抗蚀剂图案的基板上形成透明电极层并形成像素电极。 形成像素电极包括通过将带状溶液浸入表面处理的光致抗蚀剂图案中去除光致抗蚀剂图案和透明电极层。

公开(公告)号：US07876415B2

公开(公告)日：2011-01-25

申请号：US12045283

申请日：2008-03-10

申请人： Min-Sik Jung ,  Bong-Kyu Shin ,  Joo-Han Kim

发明人： Min-Sik Jung ,  Bong-Kyu Shin ,  Joo-Han Kim

IPC分类号： G02F1/1339

CPC分类号： H01L27/1288 ,  G02F1/1339 ,  G02F2001/133388 ,  G02F2001/136231 ,  G02F2001/136236 ,  H01L27/1214

摘要： A display substrate includes a base substrate, a thin-film transistor (TFT), a pixel electrode, a pad part, and a cell-gap compensating part. The base substrate has a display region, a seal region surrounding the display region, and a peripheral region surrounding the seal region. The TFT is in the display region. The pixel electrode is connected to a drain electrode of the TFT and contacts the base substrate. The pad part is interposed between a first side of the base substrate and the seal region and is connected to the TFT through a first transmission line. The cell-gap compensating part is in the seal region and includes a compensating pattern adjacent to a second side of the base substrate and an insulating pattern on the compensating pattern.

摘要翻译： 显示基板包括基底基板，薄膜晶体管（TFT），像素电极，焊盘部分和单元间隙补偿部分。 基底具有显示区域，围绕显示区域的密封区域和围绕密封区域的周边区域。 TFT位于显示区域。 像素电极连接到TFT的漏电极并接触基底。 衬垫部分介于基底衬底的第一侧和密封区之间，并通过第一传输线连接到TFT。 单元间隙补偿部分在密封区域中，并且包括与基底基板的第二侧相邻的补偿图案和补偿图案上的绝缘图案。

公开(公告)号：US20110151631A1

公开(公告)日：2011-06-23

申请号：US13018309

申请日：2011-01-31

申请人： Jong Hyun CHOUNG ,  Hong Sick PARK ,  Sun Young HONG ,  Bong Kyun KIM ,  Bong Kyu SHIN ,  Won Suk SHIN ,  Byeong Jin LEE

发明人： Jong Hyun CHOUNG ,  Hong Sick PARK ,  Sun Young HONG ,  Bong Kyun KIM ,  Bong Kyu SHIN ,  Won Suk SHIN ,  Byeong Jin LEE

IPC分类号： H01L21/336

CPC分类号： H01L27/1288 ,  H01L27/124 ,  H01L27/1248

摘要： A thin film transistor substrate and a method of manufacturing the thin film transistor substrate comprises forming a gate line and a data line intersecting each other with a gate insulating layer interposed and defining a pixel area on the substrate, a thin film transistor electrically connected to the gate line and the data line, and a stepped-structure occurring pattern overlapping at least one of the gate line and the data line; forming a passivation layer having a stepped-structure portion formed by the stepped-structure occurring pattern on the substrate; forming a photoresist pattern having a second stepped-structure portion corresponding to the stepped-structure portion on the passivation layer; patterning the passivation layer using the photoresist pattern as a mask; forming a transparent conductive layer on the substrate; and removing the photoresist pattern where the transparent conductive layer is covered by a stripper penetrating through the stepped-structure portion of the photoresist pattern and forming a pixel electrode connected to the thin film transistor.

摘要翻译： 薄膜晶体管基板和薄膜晶体管基板的制造方法包括形成栅极线和数据线，该栅极线和数据线被插入并且限定基板上的像素区域的栅极绝缘层彼此相交，薄膜晶体管电连接到 栅极线和数据线，以及与栅极线和数据线中的至少一个重叠的阶梯结构发生图案; 在所述基板上形成具有由阶梯状结构发生图案形成的台阶状部分的钝化层; 形成具有对应于所述钝化层上的阶梯状结构部分的第二阶梯结构部分的光致抗蚀剂图案; 使用光致抗蚀剂图案作为掩模来图案化钝化层; 在所述基板上形成透明导电层; 以及去除透明导电层被穿透光致抗蚀剂图案的台阶结构部分的剥离剂覆盖的光致抗蚀剂图案，并形成连接到薄膜晶体管的像素电极。

公开(公告)号：US07863065B2

公开(公告)日：2011-01-04

申请号：US11682907

申请日：2007-03-07

申请人： Min-Seok Oh ,  Bong-Kyu Shin ,  Sang-Gab Kim ,  Eun-Guk Lee ,  Hong-Kee Chin ,  Yu-Gwang Jeong ,  Seung-Ha Choi

发明人： Min-Seok Oh ,  Bong-Kyu Shin ,  Sang-Gab Kim ,  Eun-Guk Lee ,  Hong-Kee Chin ,  Yu-Gwang Jeong ,  Seung-Ha Choi

IPC分类号： H01L21/00

CPC分类号： G02F1/136227 ,  G02F1/13439 ,  G02F2201/50

摘要： A method of forming a display substrate includes forming an array layer on a substrate, forming a passivation layer on the array layer, forming a photoresist pattern on the passivation layer corresponding to a gate line, a source line and a thin-film transistor of the array layer, etching the passivation layer using the photoresist pattern as a mask Non-uniformly surface treating a surface of the photoresist pattern, forming a transparent electrode layer on the substrate having the surface-treated photoresist pattern formed thereon and forming a pixel electrode. The forming a pixel electrode includes removing the photoresist pattern and the transparent electrode layer, such as by infiltrating a strip solution into the surface-treated photoresist pattern.

摘要翻译： 形成显示基板的方法包括在基板上形成阵列层，在阵列层上形成钝化层，在对应于栅极线，源极线和薄膜晶体管的钝化层上形成光致抗蚀剂图案 使用光致抗蚀剂图案作为掩模蚀刻钝化层对光致抗蚀剂图案的表面进行非均匀表面处理，在其上形成有表面处理的光致抗蚀剂图案的基板上形成透明电极层并形成像素电极。 形成像素电极包括通过将带状溶液浸入表面处理的光致抗蚀剂图案中去除光致抗蚀剂图案和透明电极层。

公开(公告)号：US20100136775A1

公开(公告)日：2010-06-03

申请号：US12607567

申请日：2009-10-28

申请人： Seung-Ha CHOI ,  Sang-Gab KIM ,  Bong-Kyu SHIN ,  Sang-Uk LIM ,  Jin-Ho JU ,  Sung-Hoon YANG ,  Sang-Woo WHANGBO ,  Jae-Ho CHOI ,  Ki-Yeup LEE ,  Yun-Jong YEO ,  Shin-Il CHOI ,  Dong-Ju YANG ,  Hong-Kee CHIN ,  Yu-Gwang JEONG

发明人： Seung-Ha CHOI ,  Sang-Gab KIM ,  Bong-Kyu SHIN ,  Sang-Uk LIM ,  Jin-Ho JU ,  Sung-Hoon YANG ,  Sang-Woo WHANGBO ,  Jae-Ho CHOI ,  Ki-Yeup LEE ,  Yun-Jong YEO ,  Shin-Il CHOI ,  Dong-Ju YANG ,  Hong-Kee CHIN ,  Yu-Gwang JEONG

IPC分类号： H01L21/28

CPC分类号： H01L29/4908 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/458 ,  H01L29/7869

摘要： Provided is a method for manufacturing a thin-film transistor substrate, in which the etching characteristics of an insulating film and a passivation layer are enhanced. The insulating film and the passivation layer are deposited by low temperature chemical vapor deposition. The method includes disposing a gate wiring on an insulating substrate; disposing a gate insulating film on the gate wiring; disposing a data wiring on the gate insulating film; disposing a passivation layer on the data wiring; and forming a contact hole by etching at least one of the gate insulating film and the passivation layer, wherein at least one of the gate insulating film and the passivation layer is disposed at a temperature of about 280° C. or below, and the forming of the contact hole is performed at a pressure of about 60 mT or below.

摘要翻译： 提供一种制造薄膜晶体管基板的方法，其中提高了绝缘膜和钝化层的蚀刻特性。 通过低温化学气相沉积沉积绝缘膜和钝化层。 该方法包括在绝缘基板上设置栅极布线; 在栅极布线上设置栅极绝缘膜; 在栅极绝缘膜上设置数据布线; 在数据线上设置钝化层; 以及通过蚀刻所述栅极绝缘膜和所述钝化层中的至少一个来形成接触孔，其中所述栅极绝缘膜和所述钝化层中的至少一个设置在约280℃或更低的温度下，并且所述形成 的接触孔在约60mT以下的压力下进行。

公开(公告)号：US08158470B2

公开(公告)日：2012-04-17

申请号：US13018309

申请日：2011-01-31

申请人： Jong Hyun Choung ,  Hong Sick Park ,  Sun Young Hong ,  Bong Kyun Kim ,  Bong Kyu Shin ,  Won Suk Shin ,  Byeong Jin Lee

发明人： Jong Hyun Choung ,  Hong Sick Park ,  Sun Young Hong ,  Bong Kyun Kim ,  Bong Kyu Shin ,  Won Suk Shin ,  Byeong Jin Lee

IPC分类号： H01L21/336

CPC分类号： H01L27/1288 ,  H01L27/124 ,  H01L27/1248

摘要： A thin film transistor substrate and a method of manufacturing the thin film transistor substrate comprises forming a gate line and a data line intersecting each other with a gate insulating layer interposed and defining a pixel area on the substrate, a thin film transistor electrically connected to the gate line and the data line, and a stepped-structure occurring pattern overlapping at least one of the gate line and the data line; forming a passivation layer having a stepped-structure portion formed by the stepped-structure occurring pattern on the substrate; forming a photoresist pattern having a second stepped-structure portion corresponding to the stepped-structure portion on the passivation layer; patterning the passivation layer using the photoresist pattern as a mask; forming a transparent conductive layer on the substrate; and removing the photoresist pattern where the transparent conductive layer is covered by a stripper penetrating through the stepped-structure portion of the photoresist pattern and forming a pixel electrode connected to the thin film transistor.

摘要翻译： 薄膜晶体管基板和制造薄膜晶体管基板的方法包括：形成栅极线和数据线，其中栅极绝缘层相互插入并限定基板上的像素区域，薄膜晶体管电连接到 栅极线和数据线，以及与栅极线和数据线中的至少一个重叠的阶梯结构发生图案; 在所述基板上形成具有由阶梯状结构发生图案形成的台阶状部分的钝化层; 形成具有对应于所述钝化层上的阶梯状结构部分的第二阶梯结构部分的光致抗蚀剂图案; 使用光致抗蚀剂图案作为掩模来图案化钝化层; 在所述基板上形成透明导电层; 以及去除透明导电层被穿透光致抗蚀剂图案的台阶结构部分的剥离剂覆盖的光致抗蚀剂图案，并形成连接到薄膜晶体管的像素电极。

公开(公告)号：US20090280587A1

公开(公告)日：2009-11-12

申请号：US12427996

申请日：2009-04-22

申请人： Sang-Woo WHANGBO ,  Bong-Kyu Shin ,  Sang-Uk Lim ,  Jun-Hyung Souk ,  Jin-Ho Ju

发明人： Sang-Woo WHANGBO ,  Bong-Kyu Shin ,  Sang-Uk Lim ,  Jun-Hyung Souk ,  Jin-Ho Ju

IPC分类号： H01L33/00 ,  B08B5/00 ,  B05D3/10

CPC分类号： C03C23/006 ,  C03C17/36 ,  C03C17/3626 ,  C03C17/3636 ,  C03C23/0075

摘要： A method of treating a soda-lime glass (SLG) substrate includes cleaning the SLG substrate using an alkali cleaning solution and cleaning the cleaned SLG substrate using a plasma process. The SLG substrate is cleaned using the alkali cleaning solution to remove particles adhered to the SLG substrate. Thus, defects due to the adhering particles may be reduced.

摘要翻译： 处理钠钙玻璃（SLG）衬底的方法包括使用碱性清洗溶液清洗SLG衬底并使用等离子体工艺清洁清洁的SLG衬底。 使用碱性清洁溶液清洁SLG基板以除去附着在SLG基板上的颗粒。 因此，可能减少由于粘附颗粒引起的缺陷。

公开(公告)号：US20080239188A1

公开(公告)日：2008-10-02

申请号：US12045283

申请日：2008-03-10

申请人： Min-Sik JUNG ,  Bong-Kyu SHIN ,  Joo-Han KIM

发明人： Min-Sik JUNG ,  Bong-Kyu SHIN ,  Joo-Han KIM

IPC分类号： G02F1/1339 ,  G02F1/1368 ,  H01L21/70 ,  G02F1/1343

CPC分类号： H01L27/1288 ,  G02F1/1339 ,  G02F2001/133388 ,  G02F2001/136231 ,  G02F2001/136236 ,  H01L27/1214

摘要： A display substrate includes a base substrate, a thin-film transistor (TFT), a pixel electrode, a pad part, and a cell-gap compensating part. The base substrate has a display region, a seal region surrounding the display region, and a peripheral region surrounding the seal region. The TFT is in the display region. The pixel electrode is connected to a drain electrode of the TFT and contacts the base substrate. The pad part is interposed between a first side of the base substrate and the seal region and is connected to the TFT through a first transmission line. The cell-gap compensating part is in the seal region and includes a compensating pattern adjacent to a second side of the base substrate and an insulating pattern on the compensating pattern.

摘要翻译： 显示基板包括基底基板，薄膜晶体管（TFT），像素电极，焊盘部分和单元间隙补偿部分。 基底具有显示区域，围绕显示区域的密封区域和围绕密封区域的周边区域。 TFT位于显示区域。 像素电极连接到TFT的漏电极并接触基底。 衬垫部分介于基底衬底的第一侧和密封区之间，并通过第一传输线连接到TFT。 单元间隙补偿部分在密封区域中，并且包括与基底基板的第二侧相邻的补偿图案和补偿图案上的绝缘图案。

公开(公告)号：US07901965B2

公开(公告)日：2011-03-08

申请号：US11706012

申请日：2007-02-12

申请人： Jong Hyun Choung ,  Hong Sick Park ,  Sun Young Hong ,  Bong Kyun Kim ,  Bong Kyu Shin ,  Won Suk Shin ,  Byeong Jin Lee

发明人： Jong Hyun Choung ,  Hong Sick Park ,  Sun Young Hong ,  Bong Kyun Kim ,  Bong Kyu Shin ,  Won Suk Shin ,  Byeong Jin Lee

IPC分类号： H01L21/00

CPC分类号： H01L27/1288 ,  H01L27/124 ,  H01L27/1248

摘要： A thin film transistor substrate and a method of manufacturing the thin film transistor substrate comprises forming a gate line and a data line intersecting each other with a gate insulating layer interposed and defining a pixel area on the substrate, a thin film transistor electrically connected to the gate line and the data line, and a stepped-structure occurring pattern overlapping at least one of the gate line and the data line; forming a passivation layer having a stepped-structure portion formed by the stepped-structure occurring pattern on the substrate; forming a photoresist pattern having a second stepped-structure portion corresponding to the stepped-structure portion on the passivation layer; patterning the passivation layer using the photoresist pattern as a mask; forming a transparent conductive layer on the substrate; and removing the photoresist pattern where the transparent conductive layer is covered by a stripper penetrating through the stepped-structure portion of the photoresist pattern and forming a pixel electrode connected to the thin film transistor.

摘要翻译： 薄膜晶体管基板和制造薄膜晶体管基板的方法包括：形成栅极线和数据线，该栅极线和数据线被插入并且限定基板上的像素区域的栅极绝缘层彼此相交;薄膜晶体管，电连接到 栅极线和数据线，以及与栅极线和数据线中的至少一个重叠的阶梯结构发生图案; 在所述基板上形成具有由阶梯状结构发生图案形成的台阶状部分的钝化层; 形成具有对应于所述钝化层上的阶梯状结构部分的第二阶梯结构部分的光致抗蚀剂图案; 使用光致抗蚀剂图案作为掩模来图案化钝化层; 在所述基板上形成透明导电层; 以及去除透明导电层被穿透光致抗蚀剂图案的台阶结构部分的剥离剂覆盖的光致抗蚀剂图案，并形成连接到薄膜晶体管的像素电极。

公开(公告)号：US08643012B2

公开(公告)日：2014-02-04

申请号：US12952744

申请日：2010-11-23

申请人： Min-Seok Oh ,  Bong-Kyu Shin ,  Sang-Gab Kim ,  Eun-Guk Lee ,  Hong-Kee Chin ,  Yu-Gwang Jeong ,  Seung-Ha Choi

发明人： Min-Seok Oh ,  Bong-Kyu Shin ,  Sang-Gab Kim ,  Eun-Guk Lee ,  Hong-Kee Chin ,  Yu-Gwang Jeong ,  Seung-Ha Choi

IPC分类号： H01L29/04

CPC分类号： G02F1/136227 ,  G02F1/13439 ,  G02F2201/50

摘要： A method of forming a display substrate includes forming an array layer on a substrate, forming a passivation layer on the array layer, forming a photoresist pattern on the passivation layer corresponding to a gate line, a source line and a thin-film transistor of the array layer, etching the passivation layer using the photoresist pattern as a mask, Non-uniformly surface treating a surface of the photoresist pattern, forming a transparent electrode layer on the substrate having the surface-treated photoresist pattern formed thereon and forming a pixel electrode. The forming a pixel electrode includes removing the photoresist pattern and the transparent electrode layer, such as by infiltrating a strip solution into the surface-treated photoresist pattern.

摘要翻译： 形成显示基板的方法包括在基板上形成阵列层，在阵列层上形成钝化层，在对应于栅极线，源极线和薄膜晶体管的钝化层上形成光致抗蚀剂图案 使用光致抗蚀剂图案作为掩模蚀刻钝化层，对光致抗蚀剂图案的表面进行不均匀的表面处理，在其上形成有表面处理的光致抗蚀剂图案的基板上形成透明电极层并形成像素电极。 形成像素电极包括通过将带状溶液浸入表面处理的光致抗蚀剂图案中去除光致抗蚀剂图案和透明电极层。