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公开(公告)号:US20070023731A1
公开(公告)日:2007-02-01
申请号:US11540297
申请日:2006-09-29
申请人: Sunil Jha , Sreehari Nimmala , Sharath Hedge , Youngki Hong , S.V. Babu , Udaya Patri
发明人: Sunil Jha , Sreehari Nimmala , Sharath Hedge , Youngki Hong , S.V. Babu , Udaya Patri
CPC分类号: C09K3/1463 , C09G1/02 , C09K3/1409 , C23F3/04 , C23F3/06 , H01L21/3212
摘要: Aqueous polishing slurries for chemical-mechanical polishing are effective for polishing copper at high polish rates. The aqueous slurries according to the present invention may include soluble salts of molybdenum dissolved in an oxidizing agent and molybdic acid dissolved in an oxidizing agent. Methods for polishing copper by chemical-mechanical planarization include polishing copper with low pressures using a polishing pad and a aqueous slurries including soluble salts of molybdenum dissolved in an oxidizing agent and molybdic acid dissolved in an oxidizing agent, particles of MoO3 dissolved in an oxidizing agent, and particles of MoO2 dissolved in an oxidizing agent.
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公开(公告)号:US20050211953A1
公开(公告)日:2005-09-29
申请号:US11032717
申请日:2005-01-11
申请人: Sunil Jha , Sreehari Nimmala , Sharath Hegde , Youngki Hong , S.V. Babu , Udaya Patri
发明人: Sunil Jha , Sreehari Nimmala , Sharath Hegde , Youngki Hong , S.V. Babu , Udaya Patri
CPC分类号: C09K3/1463 , C09G1/02 , C09K3/1409 , C23F3/04 , C23F3/06 , H01L21/3212
摘要: Aqueous polishing slurries for chemical-mechanical polishing are effective for polishing copper at high polish rates. The aqueous slurries according to the present invention may include soluble salts of molybdenum dissolved in an oxidizing agent and molybdic acid dissolved in an oxidizing agent. Methods for polishing copper by chemical-mechanical planarization include polishing copper with low pressures using a polishing pad and a aqueous slurries including soluble salts of molybdenum dissolved in an oxidizing agent and molybdic acid dissolved in an oxidizing agent, particles of MoO3 dissolved in an oxidizing agent, and particles of MoO2 dissolved in an oxidizing agent.
摘要翻译: 用于化学机械抛光的水性抛光浆对于以高抛光速率抛光铜是有效的。 根据本发明的水性浆料可以包括溶解在氧化剂中的钼的可溶性盐和溶解在氧化剂中的钼酸。 通过化学 - 机械平面化抛光铜的方法包括使用抛光垫对低压抛光铜和包含溶解在氧化剂中的钼的可溶性盐和溶解在氧化剂中的钼酸的水性浆料,MoO 3的颗粒, / SUB>溶解在氧化剂中的MoO 2 N 2 O 3的颗粒溶解在氧化剂中。
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公开(公告)号:US20070043230A1
公开(公告)日:2007-02-22
申请号:US11527429
申请日:2006-09-26
申请人: Sunil Jha , Sreehari Nimmala , Sharath Hegde , Youngki Hong , S.V. Babu , Udaya Patri
发明人: Sunil Jha , Sreehari Nimmala , Sharath Hegde , Youngki Hong , S.V. Babu , Udaya Patri
IPC分类号: C07F11/00
CPC分类号: C09K3/1463 , C09G1/02 , C09K3/1409 , C23F3/04 , C23F3/06 , H01L21/3212
摘要: Aqueous polishing slurries for chemical-mechanical polishing are effective for polishing copper at high polish rates. The aqueous slurries according to the present invention may include soluble salts of molybdenum dissolved in an oxidizing agent and molybdic acid dissolved in an oxidizing agent. Methods for polishing copper by chemical-mechanical planarization include polishing copper with low pressures using a polishing pad and a aqueous slurries including soluble salts of molybdenum dissolved in an oxidizing agent and molybdic acid dissolved in an oxidizing agent, particles of MoO3 dissolved in an oxidizing agent, and particles of MoO2 dissolved in an oxidizing agent.
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4.
公开(公告)号:US20050026444A1
公开(公告)日:2005-02-03
申请号:US10846718
申请日:2004-05-13
申请人: S. Babu , Sharath Hegde , Sunil Jha , Udaya Patri , Youngki Hong
发明人: S. Babu , Sharath Hegde , Sunil Jha , Udaya Patri , Youngki Hong
IPC分类号: C09G1/02 , C09K3/14 , C23F3/06 , H01L21/321 , H01L21/302 , H01L21/311 , H01L21/461
CPC分类号: C09K3/1463 , C09G1/02 , C09K3/1409 , C23F3/06 , H01L21/3212
摘要: The claimed invention involves a novel aqueous slurry for chemical-mechanical planarization that is effective for polishing copper at high polish rates. The aqueous slurry according to the present invention comprises particles of MoO3 dissolved in an oxidizing agent. A method for polishing copper by chemical-mechanical planarization includes contacting copper with a polishing pad and an aqueous slurry comprising particles of MoO3 dissolved in an oxidizing agent.
摘要翻译: 所要求保护的发明涉及用于化学 - 机械平面化的新型含水浆料,其有效地以高抛光速率抛光铜。 根据本发明的含水浆料包含溶解在氧化剂中的MoO 3颗粒。 通过化学机械平面化抛光铜的方法包括使铜与抛光垫接触,以及包含溶解在氧化剂中的MoO 3颗粒的含水浆料。
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公开(公告)号:US20060025495A1
公开(公告)日:2006-02-02
申请号:US10909073
申请日:2004-07-30
申请人: Mohamed Khan , Sunil Jha
发明人: Mohamed Khan , Sunil Jha
IPC分类号: C08J5/14
CPC分类号: F16D69/025
摘要: The claimed invention involves a novel composition of matter comprising a mixture of Fe—Mo Intermetallic and copper oxide. A novel composition of matter of Fe—Mo Intermetallic, copper oxide and calcium carbonate is also claimed. The claimed invention also involves a novel friction lining additive comprising Fe—Mo Intermetallic and copper oxide for improved braking effectiveness. Fe—Mo Intermetallic, copper oxide and calcium carbonate may also be used as a friction lining additive according to the present invention. The claimed invention also includes a novel motor brush comprising Fe—Mo Intermetallic and copper oxide for improved wear. Fe—Mo Intermetallic, copper oxide and calcium carbonate may also be used as a motor brush additive according to the present invention.
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公开(公告)号:US20060086205A1
公开(公告)日:2006-04-27
申请号:US10970456
申请日:2004-10-21
申请人: Loyal Johnson , Sunil Jha , Carl Cox , Patrick Thompson
发明人: Loyal Johnson , Sunil Jha , Carl Cox , Patrick Thompson
IPC分类号: B22F9/26
CPC分类号: B22F9/22 , B22F1/0011 , B22F1/0014
摘要: Molybdenum metal powder, and method for production thereof. Molybdenum metal powder has surface-area-to-mass-ratios in a range of between about 1.0 meters2/gram (m2/g) and about 3.0 m2/g, as determined by BET analysis, in combination with a particle size wherein at least 30% of the particles have a particle size larger than a size +100 standard Tyler mesh sieve. In addition, molybdenum metal powder 10 may be further distinguished by flowability in a range of between about 29 seconds/50 grams (s/50 g) and about 64 s/50 g, as determined by a Hall Flowmeter. A method of producing molybdenum powder may comprise providing a supply of ammonium molybdate, heating the ammonium molybdate at an initial temperature in the presence of a reducing gas to produce an intermediate product, and heating the intermediate product at a final temperature in the presence of the reducing gas, producing molybdenum metal powder.
摘要翻译: 钼金属粉末及其制造方法。 钼金属粉末的表面积与质量比在约1.0m 2 / g(m 2 SUP / g以下)范围内,约3.0μm 通过BET分析测定,与颗粒尺寸相结合,其中至少30%的颗粒具有大于+100标准泰勒筛网的粒度。 此外,通过霍尔流量计测定的钼金属粉末10可以进一步区别在约29秒/ 50克(s / 50克)至约64秒/ 50克之间的流动性。 制备钼粉末的方法可以包括提供钼酸铵供应,在还原气体存在下在初始温度下加热钼酸铵以产生中间产物,并在最终温度下在中间产物存在下加热中间产物 还原气体,生产钼金属粉末。
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7.
公开(公告)号:US20050022456A1
公开(公告)日:2005-02-03
申请号:US10631698
申请日:2003-07-30
申请人: S. Babu , Sharath Hegde , Sunil Jha
发明人: S. Babu , Sharath Hegde , Sunil Jha
IPC分类号: C09G1/02 , C09K3/14 , C23F3/06 , H01L21/321 , B24D3/02
CPC分类号: C09K3/1463 , C09G1/02 , C09K3/1409 , C23F3/06 , H01L21/3212
摘要: The claimed invention involves a novel aqueous polishing slurry for chemical-mechanical polishing that is effective for polishing copper at high polish rates. The aqueous slurry according to the present invention comprises particles of MoO2 in an oxidizing agent. A method for polishing copper by chemical-mechanical polishing includes contacting copper with a polishing pad and an aqueous slurry comprising particles of MoO2 in an oxidizing agent.
摘要翻译: 所要求保护的发明涉及用于化学 - 机械抛光的新颖的水性抛光浆料,其以高抛光速率对铜进行抛光是有效的。 根据本发明的含水浆料包含氧化剂中的MoO 2颗粒。 通过化学机械抛光来抛光铜的方法包括使铜与抛光垫接触,以及包含氧化剂中的MoO 2颗粒的含水浆料。
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