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    Phase change memory apparatus having an improved cycling endurance and programming method therefor
    4.
    发明授权
    Phase change memory apparatus having an improved cycling endurance and programming method therefor 有权
    具有改进的循环耐久性和编程方法的相变存储装置

    公开(公告)号：US07679954B2

    公开(公告)日：2010-03-16

    申请号：US12318365

    申请日：2008-12-29

    申请人： Suyoun Lee ,  Byung-ki Cheong ,  Jeung-hyun Jeong ,  Taek Sung Lee ,  Won Mok Kim

    发明人： Suyoun Lee ,  Byung-ki Cheong ,  Jeung-hyun Jeong ,  Taek Sung Lee ,  Won Mok Kim

    IPC分类号： G11C11/00

    CPC分类号： G11C13/0069 ,  G11C13/0004 ,  G11C13/0033 ,  G11C16/3431 ,  G11C16/349 ,  G11C2013/0073

    摘要： A phase change memory apparatus includes a phase change memory array in which a plurality of phase change memory devices are arranged, and a pulse generator that supplies a writing current pulse, an erasure current pulse, and a reverse repair current pulse to the phase change memory devices in the phase change memory array. The reverse repair current pulse has opposite direction to the writing current pulse and the erasure current pulse of the phase change memory devices, and is of such a size that resultant Joule heat and electromigration move the elements of the reverse repair current pulse. The reverse repair current pulse has a width equal to or more than a smaller one of duration of a normal writing operation and duration of a normal erasure operation.

    摘要翻译： 相变存储装置包括其中布置有多个相变存储器件的相变存储器阵列和向相变存储器提供写入电流脉冲，擦除电流脉冲和反向修复电流脉冲的脉冲发生器 相变存储器阵列中的器件。 反向修复电流脉冲具有与写入电流脉冲和相变存储器件的擦除电流脉冲相反的方向，并且具有使得焦耳热和电迁移移动逆向修复电流脉冲的元件的尺寸。 反向修复电流脉冲具有等于或大于正常写入操作的持续时间和正常擦除操作的持续时间中的较小的一个宽度的宽度。

    Phase change memory apparatus having an improved cycling endurance and programing method therefor
    5.
    发明申请
    Phase change memory apparatus having an improved cycling endurance and programing method therefor 有权
    具有改进的循环耐久性和编程方法的相变存储装置

    公开(公告)号：US20090168504A1

    公开(公告)日：2009-07-02

    申请号：US12318365

    申请日：2008-12-29

    申请人： Suyoun Lee ,  Byung-ki Cheong ,  Jeung-hyun Jeong ,  Taek Sung Lee ,  Won Mok Kim

    发明人： Suyoun Lee ,  Byung-ki Cheong ,  Jeung-hyun Jeong ,  Taek Sung Lee ,  Won Mok Kim

    IPC分类号： G11C11/00 ,  G11C11/416 ,  G11C7/00

    CPC分类号： G11C13/0069 ,  G11C13/0004 ,  G11C13/0033 ,  G11C16/3431 ,  G11C16/349 ,  G11C2013/0073

    摘要： A phase change memory apparatus includes a phase change memory array in which a plurality of phase change memory devices are arranged, and a pulse generator that supplies a writing current pulse, an erasure current pulse, and a reverse repair current pulse to the phase change memory devices in the phase change memory array. The reverse repair current pulse has opposite direction to the writing current pulse and the erasure current pulse of the phase change memory devices, and is of such a size that resultant Joule heat and electromigration move the elements of the reverse repair current pulse. The reverse repair current pulse has a width equal to or more than a smaller one of duration of a normal writing operation and duration of a normal erasure operation.

    摘要翻译： 相变存储装置包括其中布置有多个相变存储器件的相变存储器阵列和向相变存储器提供写入电流脉冲，擦除电流脉冲和反向修复电流脉冲的脉冲发生器 相变存储器阵列中的器件。 反向修复电流脉冲具有与写入电流脉冲和相变存储器件的擦除电流脉冲相反的方向，并且具有使得焦耳热和电迁移移动逆向修复电流脉冲的元件的尺寸。 反向修复电流脉冲具有等于或大于正常写入操作的持续时间和正常擦除操作的持续时间中的较小的一个宽度的宽度。

    Method for growing thin film
    7.
    发明授权
    Method for growing thin film 有权
    生长薄膜的方法

    公开(公告)号：US08247031B2

    公开(公告)日：2012-08-21

    申请号：US12417231

    申请日：2009-04-02

    申请人： Young Joon Baik ,  Won Mok Kim ,  Kyeong Seok Lee ,  Jong-Keuk Park ,  Jeung-hyun Jeong ,  Suyoun Lee ,  Taek Sung Lee

    发明人： Young Joon Baik ,  Won Mok Kim ,  Kyeong Seok Lee ,  Jong-Keuk Park ,  Jeung-hyun Jeong ,  Suyoun Lee ,  Taek Sung Lee

    IPC分类号： C23C16/00 ,  B05D1/36

    CPC分类号： C30B29/16 ,  C23C16/407 ,  C30B25/02 ,  C30B28/12

    摘要： Disclosed is a method for growing a thin film, which includes modifying a surface grain size and surface roughness on a thin film to improve the mobility of a carrier and a light scattering effect. The method for growing a thin film includes: forming nuclei of grains having various grain orientations on a substrate; causing first grains having a first specific grain orientation to grow predominantly among the grains having various grain orientations, thereby forming a first preferred texture comprised of the predominantly grown first grains; and then causing second grains having a second grain orientation to grow predominantly, thereby forming a second preferred texture comprised of the predominantly grown second grains, wherein the surface grain size of each of the second grains forming the second texture is larger than that of each of the first grains forming the first texture.

    摘要翻译： 公开了一种用于生长薄膜的方法，其包括改变薄膜上的表面粒径和表面粗糙度以提高载体的迁移率和光散射效应。 生长薄膜的方法包括：在基板上形成具有各种晶粒取向的晶粒的核; 使得具有第一特定晶粒取向的第一晶粒主要在具有各种晶粒取向的晶粒中生长，由此形成由主要生长的第一晶粒组成的第一优选纹理; 然后使具有第二晶粒取向的第二晶粒主要生长，从而形成由主要生长的第二晶粒组成的第二优选纹理，其中形成第二纹理的每个第二晶粒的表面粒径大于 第一颗粒形成第一纹理。

    Nonvolatile memory device
    8.
    发明授权
    Nonvolatile memory device 有权
    非易失性存储器件

    公开(公告)号：US08461639B2

    公开(公告)日：2013-06-11

    申请号：US12718108

    申请日：2010-03-05

    申请人： Jaehun Jeong ,  Hansoo Kim ,  Jaehoon Jang ,  Sunil Shim ,  Suyoun Lee

    发明人： Jaehun Jeong ,  Hansoo Kim ,  Jaehoon Jang ,  Sunil Shim ,  Suyoun Lee

    IPC分类号： H01L29/788

    CPC分类号： H01L27/11568 ,  H01L27/11578 ,  H01L27/11582

    摘要： A vertical NAND string nonvolatile memory device can include an upper dopant region disposed at an upper portion of an active pattern and can have a lower surface located a level higher than an upper surface of an upper selection gate pattern. A lower dopant region can be disposed at a lower portion of the active pattern and can have an upper surface located at a level lower than a lower surface of a lower selection gate pattern.

    摘要翻译： 垂直NAND串非易失性存储器件可以包括设置在有源图案的上部的上部掺杂剂区域，并且可以具有位于比上部选择栅极图案的上表面高的电平的下表面。 下掺杂剂区域可以设置在有源图案的下部，并且可以具有位于比下选择栅图案的下表面低的水平的上表面。

    NONVOLATILE MEMORY DEVICE
    9.
    发明申请
    NONVOLATILE MEMORY DEVICE 有权
    非易失性存储器件

    公开(公告)号：US20100224929A1

    公开(公告)日：2010-09-09

    申请号：US12718108

    申请日：2010-03-05

    申请人： Jaehun Jeong ,  Hansoo Kim ,  Jaehoon Jang ,  Sunil Shim ,  Suyoun Lee

    发明人： Jaehun Jeong ,  Hansoo Kim ,  Jaehoon Jang ,  Sunil Shim ,  Suyoun Lee

    IPC分类号： H01L29/792 ,  H01L29/788

    CPC分类号： H01L27/11568 ,  H01L27/11578 ,  H01L27/11582

    摘要： A vertical NAND string nonvolatile memory device can include an upper dopant region disposed at an upper portion of an active pattern and can have a lower surface located a level higher than an upper surface of an upper selection gate pattern. A lower dopant region can be disposed at a lower portion of the active pattern and can have an upper surface located at a level lower than a lower surface of a lower selection gate pattern.

    摘要翻译： 垂直NAND串非易失性存储器件可以包括设置在有源图案的上部的上部掺杂剂区域，并且可以具有位于比上部选择栅极图案的上表面高的电平的下表面。 下掺杂剂区域可以设置在有源图案的下部，并且可以具有位于比下选择栅图案的下表面低的水平的上表面。