摘要:
A substrate for an organic light-emitting device, especially a transparent glass substrate, which includes, on a first main face, a bottom electrode film, the electrode film being formed from a thin-film multilayer coating comprising, in succession, at least: a contact layer based on a metal oxide and/or a metal nitride; a metallic functional layer having an intrinsic electrical conductivity property; an overlayer based on the metal oxide and/or a metal nitride, especially for matching the work function of said electrode film, said substrate including a base layer, said base layer covering said main face.
摘要:
The invention relates to a substrate for an organic light-emitting device especially a transparent glass substrate, which includes, on a first main face a bottom electrode film the electrode film being formed from a thin-film multilayer coating comprising, in succession, at least a contact layer based on a metal oxide and/or a metal nitride; a metallic functional layer having an intrinsic electrical conductivity property; an overlayer based on the metal oxide and/or a metal nitride, especially for matching the work function of said electrode film, said substrate including a base layer, the base layer covering the main face.
摘要:
The invention relates to a substrate (1) for an organic light-emitting device (10), especially a transparent glass substrate, which includes, on a first main face (11), a bottom electrode film (3), the electrode film (3) being formed from a thin-film multilayer coating comprising, in succession, at least: a contact layer (31) based on a metal oxide and/or a metal nitride; a metallic functional layer (32) having an intrinsic electrical conductivity property; an overlayer (34) based on the metal oxide and/or a metal nitride, especially for matching the work function of said electrode film, said substrate including a base layer (2), said base layer (2) covering said main face (11).
摘要:
The invention relates to a glass substrate (10) provided on a main face with a stack of thin layers comprising a metallic functional layer (40) with reflective properties in the infrared and/or in solar radiation, based notably on silver or a metal alloy containing silver, and two antireflective coatings (20, 60), each of said coatings having at least one dielectric layer (22, 64) based on silicon nitride, optionally doped with at least one other element, such as aluminum, said functional layer (40) being disposed between the two antireflective coatings (20, 60), characterized in that the optical thickness e60 in nm of the overlying antireflective coating (60) is: e60=5×e40+α, where e40 is the geometric thickness in nm of the functional layer (40) such that 13≦e40≦25, and preferably 14≦e40≦18, and where α is a number=25±15.
摘要:
The subject of the present invention is a multilayer electrode (3), acid etching thereof and also organic light-emitting devices incorporating it. The multilayer electrode, known as a lower electrode for an organic light-emitting device (10), successively comprises: —a contact layer (31) based on a metal oxide and/or a metal nitride; a functional metallic layer (32) having intrinsic electrical conductivity properties; a thin blocking layer (32) directly on the functional layer, the layer comprising a metallic layer having a thickness less than or equal to 5 nm and/or a layer with a thickness less than or equal to 10 nm, which is based on a substoichiometric metal oxide, substoichiometric metal oxynitride or substoichiometric metal nitride; a coating comprising an overlayer based on a metal oxide (34) for adapting the work function.
摘要:
The subject of the present invention is a multilayer electrode (3), acid etching thereof and also organic light-emitting devices incorporating it. The multilayer electrode, known as a lower electrode for an organic light-emitting device (10), successively comprises:—a contact layer (31) based on a metal oxide and/or a metal nitride; a functional metallic layer (32) having intrinsic electrical conductivity properties; a thin blocking layer (32) directly on the functional layer, the layer comprising a metallic layer having a thickness less than or equal to 5 nm and/or a layer with a thickness less than or equal to 10 nm, which is based on a substoichiometric metal oxide, substoichiometric metal oxynitride or substoichiometric metal nitride; a coating comprising an overlayer based on a metal oxide (34) for adapting the work function.
摘要:
The invention relates to a substrate (10), especially a transparent glass substrate, provided with a thin-film multilayer comprising a functional layer (40) having reflection properties in the infrared and/or in solar radiation, especially a metallic functional layer based on silver or on a metal alloy containing silver, and two coatings (20, 60), said coatings being composed of a plurality of dielectric layers (24, 26; 64), so that the functional layer (40) is placed between the two coatings (20, 60), the functional layer (40) being deposited on a wetting layer (30) itself deposited directly onto a subjacent coating (20), characterized in that the subjacent coating (20) comprises at least one dielectric layer (24) based on nitride, especially on silicon nitride and/or aluminum nitride, and at least one noncrystalline smoothing layer (26) made from a mixed oxide, said smoothing layer (26) being in contact with said superjacent wetting layer (30).
摘要:
The subject of the invention is a substrate that can be used as a substrate for the epitaxial growth of layers based on gallium nitride and comprising a support material (11, 21) coated on at least one of its faces with at least one multilayered stack comprising at least one zinc-oxide-based layer (13, 24). The substrate is coated with a semiconductor structure of III-N or II-VI type, and it is characterized in that placed between the support material (11, 21) and said at least one zinc-oxide-based layer (13, 24) is at least one intermediate layer (12, 23) comprising oxides with at least two elements chosen from tin (Sn), zinc (Zn), indium (In), gallium (Ga) and antimony (Sb).
摘要:
The subject of the invention is a substrate that can be used as a substrate for the epitaxial growth of layers based on gallium nitride and comprising a support material (11, 21) coated on at least one of its faces with at least one multilayered stack comprising at least one zinc-oxide-based layer (13, 24). The substrate is coated with a semiconductor structure of III-N or II-VI type, and it is characterized in that placed between the support material (11, 21) and said at least one zinc-oxide-based layer (13, 24) is at least one intermediate layer (12, 23) comprising oxides with at least two elements chosen from tin (Sn), zinc (Zn), indium (In), gallium (Ga) and antimony (Sb).
摘要:
The invention relates to a substrate (10), especially a transparent glass substrate, provided with a thin-film multilayer coating comprising an alternation of n functional layers (40) having reflection properties in the infrared and/or in solar radiation, especially metallic functional layers based on silver, and (n+1) dielectric films (20, 60), where n≧1, said films being composed of a layer or a plurality of layers (22, 24, 62, 64), so that each functional layer (40) is placed between at least two dielectric films (20, 60), characterized in that at least one functional layer (40) includes a blocker film (30, 50) consisting of: on the one hand, an interface layer (32, 52) immediately in contact with said functional layer, this interface layer being made of a material that is not a metal; and on the other hand, at least one metal layer (34, 54) made of a metallic material, immediately in contact with said interface layer (32, 52).