-
公开(公告)号：US11923425B2
公开(公告)日：2024-03-05
申请号：US18170709
申请日：2023-02-17
发明人： Yi-Cheng Chiu , Tian Sheng Lin , Hung-Chou Lin , Yi-Min Chen , Chiu-Hua Chung
IPC分类号： H01L29/40 , H01L21/765 , H01L29/06 , H01L29/66 , H01L29/78
CPC分类号： H01L29/402 , H01L21/765 , H01L29/0653 , H01L29/66681 , H01L29/7816
摘要： A method for manufacturing a device may include providing an ultra-high voltage (UHV) component that includes a source region and a drain region, and forming an oxide layer on a top surface of the UHV component. The method may include connecting a low voltage terminal to the source region of the UHV component, and connecting a high voltage terminal to the drain region of the UHV component. The method may include forming a shielding structure on a surface of the oxide layer provided above the drain region of the UHV component, forming a high voltage interconnection that connects to the shielding structure and to the high voltage terminal, and forming a metal routing that connects the shielding structure and the low voltage terminal.
-
公开(公告)号：US12062687B2
公开(公告)日：2024-08-13
申请号：US18215707
申请日：2023-06-28
发明人： Hong-Yang Chen , Tian Sheng Lin , Yi-Cheng Chiu , Hung-Chou Lin , Yi-Min Chen , Kuo-Ming Wu , Chiu-Hua Chung
IPC分类号： H01L27/108 , H01L27/01 , H01L27/06 , H01L29/76 , H01L31/119 , H01L49/02
CPC分类号： H01L28/60 , H01L27/01 , H01L27/0629
摘要： A capacitor structure for a power semiconductor device includes a semiconductor substrate, an isolation insulating layer having a ring-shape and including an outer periphery and an inner periphery defining an opening region, a first electrode disposed on the isolation insulating layer, a dielectric layer disposed on the first electrode, and a second electrode disposed on the dielectric layer.
-
公开(公告)号：US11728374B2
公开(公告)日：2023-08-15
申请号：US17498561
申请日：2021-10-11
发明人： Hong-Yang Chen , Tian Sheng Lin , Yi-Cheng Chiu , Hung-Chou Lin , Yi-Min Chen , Kuo-Ming Wu , Chiu-Hua Chung
IPC分类号： H01L27/108 , H01L29/76 , H01L31/119 , H01L49/02 , H01L27/01 , H01L27/06
CPC分类号： H01L28/60 , H01L27/01 , H01L27/0629
摘要： A capacitor structure for a power semiconductor device includes a semiconductor substrate, an isolation insulating layer having a ring-shape and including an outer periphery and an inner periphery defining an opening region, a first electrode disposed on the isolation insulating layer, a dielectric layer disposed on the first electrode, and a second electrode disposed on the dielectric layer.
-
公开(公告)号：US11415878B2
公开(公告)日：2022-08-16
申请号：US17021778
申请日：2020-09-15
发明人： Kuo-Hao Lee , You-Cheng Jhang , Han-Zong Pan , Jui-Chun Weng , Chiu-Hua Chung , Sheng-Yuan Lin , Hsin-Yu Chen
摘要： A photomask assembly may be formed such that stress relief trenches are formed in a pellicle frame of the photomask assembly. The stress relief trenches may reduce or prevent damage to a pellicle that may otherwise result from deformation of the pellicle. The stress relief trenches may be formed in areas of the pellicle frame to allow the pellicle frame to deform with the pellicle, thereby reducing the amount damage to the pellicle caused by the pellicle frame.
-
公开(公告)号：US20220069123A1
公开(公告)日：2022-03-03
申请号：US17192862
申请日：2021-03-04
发明人： Yi-Cheng Chiu , Tien-Sheng Lin , Sheng-Fu Hsu , Chen-Yi Lee , Chiu-Hua Chung
IPC分类号： H01L29/78 , H01L29/06 , H01L29/40 , H01L29/417 , H01L29/66
摘要： A semiconductor device and a manufacturing method thereof are provided. The semiconductor device has a source region and a drain region in a substrate, a gate structure and a metallic line. The source region surrounds the drain region in the substrate. The gate structure is disposed on the substrate, and disposed between the source region and the drain region. The gate structure surrounds the drain region. The metallic line is located above the source and drain regions and the gate structure and electrically connected to the drain region or the source region. The source region includes a doped region having a break region located between two opposite ends of the doped region. The metallic line extends from the drain region, across the gate structure and across the break region and beyond the source region.
-
公开(公告)号：US09680009B2
公开(公告)日：2017-06-13
申请号：US14926582
申请日：2015-10-29
发明人： Karthick Murukesan , Yi-Cheng Chiu , Hung-Chou Lin , Chih-Yuan Chan , Yi-Min Chen , Chen-Chien Chang , Chiu-Hua Chung , Fu-Chih Yang , Chun Lin Tsai
CPC分类号： H01L29/7816 , H01L23/5225 , H01L29/0692 , H01L29/1083 , H01L29/1095 , H01L29/402
摘要： In some embodiments, a semiconductor device includes a transistor, an isolation component, and a conductive layer. The transistor includes a source region and a drain region. The isolation component surrounds the source region. The conductive layer is configured for interconnection of the drain region. The conductive component is between the conductive layer and the isolation component, configured to shield the isolation component from an electric field over the isolation component.
-
公开(公告)号：US12130551B2
公开(公告)日：2024-10-29
申请号：US18335232
申请日：2023-06-15
发明人： Kuo-Hao Lee , You-Cheng Jhang , Han-Zong Pan , Jui-Chun Weng , Chiu-Hua Chung , Sheng-Yuan Lin , Hsin-Yu Chen
CPC分类号： G03F1/64 , G03F1/62 , G03F7/70983
摘要： A photomask assembly may be formed such that stress relief trenches are formed in a pellicle frame of the photomask assembly. The stress relief trenches may reduce or prevent damage to a pellicle that may otherwise result from deformation of the pellicle. The stress relief trenches may be formed in areas of the pellicle frame to allow the pellicle frame to deform with the pellicle, thereby reducing the amount damage to the pellicle caused by the pellicle frame.
-
公开(公告)号：US20240355817A1
公开(公告)日：2024-10-24
申请号：US18757630
申请日：2024-06-28
IPC分类号： H01L27/08 , H01L21/285 , H01L27/06
CPC分类号： H01L27/0805 , H01L21/2855 , H01L27/0629 , H01L28/40
摘要： The present disclosure relates to a semiconductor structure. The semiconductor structure includes a first electrode over a substrate. A first capacitor dielectric layer is over an upper surface of the first electrode. The upper surface of the first electrode laterally extends to opposing outermost sidewalls of the first capacitor dielectric layer. A second electrode is over the first capacitor dielectric layer. The upper surface of the first electrode extends past opposing sides of the second electrode. A second capacitor dielectric layer is over the second electrode. A third electrode has a lower surface directly over an upper surface of the second capacitor dielectric layer and completely confined over the second electrode.
-
公开(公告)号：US12074162B2
公开(公告)日：2024-08-27
申请号：US17350349
申请日：2021-06-17
IPC分类号： H01L27/08 , H01L21/285 , H01L27/06 , H01L49/02
CPC分类号： H01L27/0805 , H01L21/2855 , H01L27/0629 , H01L28/40
摘要： The present disclosure relates to a semiconductor structure. The semiconductor structure includes a lower electrode over a substrate, a first capacitor dielectric layer over the lower electrode, an intermediate electrode over the first capacitor dielectric layer, and a second capacitor dielectric layer is over the intermediate electrode. An upper electrode is over the second capacitor dielectric layer. The upper electrode is completely confined over the intermediate electrode. A first protection layer is completely confined over the intermediate electrode. The first protection layer covers opposing sidewalls of the upper electrode and upper surfaces of the intermediate electrode and the upper electrode.
-
公开(公告)号：US20230343816A1
公开(公告)日：2023-10-26
申请号：US18215707
申请日：2023-06-28
发明人： Hong-Yang CHEN , Tian Sheng Lin , Yi-Cheng Chiu , Hung-Chou Lin , Yi-Min Chen , Kuo-Ming Wu , Chiu-Hua Chung
CPC分类号： H01L28/60 , H01L27/01 , H01L27/0629
摘要： A capacitor structure for a power semiconductor device includes a semiconductor substrate, an isolation insulating layer having a ring-shape and including an outer periphery and an inner periphery defining an opening region, a first electrode disposed on the isolation insulating layer, a dielectric layer disposed on the first electrode, and a second electrode disposed on the dielectric layer.
-
-
-
-
-
-
-
-
-
搜索结果
14 条记录 (耗时 0.02 秒)
