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    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    1.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权

    公开(公告)号：US20220069123A1

    公开(公告)日：2022-03-03

    申请号：US17192862

    申请日：2021-03-04

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Yi-Cheng Chiu ,  Tien-Sheng Lin ,  Sheng-Fu Hsu ,  Chen-Yi Lee ,  Chiu-Hua Chung

    IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/40 ,  H01L29/417 ,  H01L29/66

    摘要： A semiconductor device and a manufacturing method thereof are provided. The semiconductor device has a source region and a drain region in a substrate, a gate structure and a metallic line. The source region surrounds the drain region in the substrate. The gate structure is disposed on the substrate, and disposed between the source region and the drain region. The gate structure surrounds the drain region. The metallic line is located above the source and drain regions and the gate structure and electrically connected to the drain region or the source region. The source region includes a doped region having a break region located between two opposite ends of the doped region. The metallic line extends from the drain region, across the gate structure and across the break region and beyond the source region.

    Dielectric Punch-Through Stoppers for Forming FinFETs Having Dual Fin Heights
    4.
    发明申请
    Dielectric Punch-Through Stoppers for Forming FinFETs Having Dual Fin Heights 审中-公开
    用于形成具有双鳍高度的FinFET的介质穿通塞

    公开(公告)号：US20150262861A1

    公开(公告)日：2015-09-17

    申请号：US14725088

    申请日：2015-05-29

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Shih-Ting Hung ,  Cheng-Hung Chang ,  Chen-Yi Lee ,  Chen-Nan Yeh ,  Chen-Hua Yu

    IPC分类号： H01L21/762 ,  H01L29/10 ,  H01L21/8234

    CPC分类号： H01L21/76202 ,  H01L21/823431 ,  H01L21/823481 ,  H01L29/1083 ,  H01L29/66795 ,  H01L29/785

    摘要： A semiconductor structure includes a semiconductor substrate having a first portion and a second portion. A first Fin field-effect transistor (FinFET) is formed over the first portion of the semiconductor substrate, wherein the first FinFET includes a first fin having a first fin height. A second FinFET is formed over the second portion of the semiconductor substrate, wherein the second FinFET includes a second fin having a second fin height different from the first fin height. A top surface of the first fin is substantially level with a top surface of the second fin. A punch-through stopper is underlying and adjoining the first FinFET, wherein the punch-through stopper isolates the first fin from the first portion of the semiconductor substrate.

    摘要翻译： 半导体结构包括具有第一部分和第二部分的半导体衬底。 第一Fin场效应晶体管（FinFET）形成在半导体衬底的第一部分上，其中第一FinFET包括具有第一鳍片高度的第一鳍片。 第二FinFET形成在半导体衬底的第二部分上，其中第二FinFET包括具有不同于第一鳍片高度的第二鳍片高度的第二鳍片。 第一翅片的顶表面基本上与第二翅片的顶表面平齐。 穿通止动件位于第一FinFET的下面并邻接，其中穿通止动件将第一鳍片与半导体衬底的第一部分隔离。

    Method for reducing interfacial layer thickness for high-k and metal gate stack
    7.
    发明授权
    Method for reducing interfacial layer thickness for high-k and metal gate stack 有权
    降低高k和金属栅极叠层的界面层厚度的方法

    公开(公告)号：US09006056B2

    公开(公告)日：2015-04-14

    申请号：US13904586

    申请日：2013-05-29

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Liang-Gi Yao ,  Chun-Hu Cheng ,  Chen-Yi Lee ,  Jeff J. Xu ,  Clement Hsingjen Wann

    IPC分类号： H01L21/8249 ,  H01L29/78 ,  H01L21/28 ,  H01L29/51 ,  H01L21/283

    CPC分类号： H01L29/513 ,  H01L21/02172 ,  H01L21/022 ,  H01L21/28158 ,  H01L21/28211 ,  H01L21/283 ,  H01L29/42364 ,  H01L29/517 ,  H01L29/78

    摘要： A method of performing an ultraviolet (UV) curing process on an interfacial layer over a semiconductor substrate, the method includes supplying a gas flow rate ranging from 10 standard cubic centimeters per minute (sccm) to 5 standard liters per minute (slm), wherein the gas comprises inert gas. The method further includes heating the interfacial layer at a temperature less than or equal to 700° C. Another method of performing an annealing process on an interfacial layer over a semiconductor substrate, the second method includes supplying a gas flow rate ranging from 10 sccm to 5 slm, wherein the gas comprises inert gas. The method further includes heating the interfacial layer at a temperature less than or equal to 600° C.

    摘要翻译： 一种在半导体衬底上的界面层上进行紫外线（UV）固化过程的方法，该方法包括将每分钟10标准立方厘米（sccm）的气体流速提供到5标准升/分钟（slm），其中 气体包括惰性气体。 该方法还包括在小于或等于700℃的温度下加热界面层。在半导体衬底上的界面层上进行退火处理的另一种方法，第二种方法包括将10sccm的气体流速提供给 5slm，其中气体包括惰性气体。 该方法还包括在小于或等于600℃的温度下加热界面层。