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公开(公告)号：US09773701B2
公开(公告)日：2017-09-26
申请号：US14692799
申请日：2015-04-22
发明人： Yuan-Hung Liu , Ku-Feng Yang , Pei-Ching Kuo , Ming-Tsu Chung , Hsin-Yu Chen , Tsang-Jiuh Wu , Wen-Chih Chiou
IPC分类号： H01L21/768 , H01L23/48 , H01L25/065 , H01L25/00 , H01L21/285
CPC分类号： H01L21/76898 , H01L21/2855 , H01L21/28556 , H01L21/7682 , H01L21/76831 , H01L21/7684 , H01L21/76879 , H01L23/481 , H01L25/0657 , H01L25/50 , H01L2224/0401 , H01L2224/05009 , H01L2225/06541 , H01L2924/1305 , H01L2924/13091 , H01L2924/00
摘要： A method of forming an integrated circuit includes forming at least one opening through a first surface of a substrate. The method further includes forming at least one conductive structure in the at least one opening. The method further includes removing a portion of the substrate to form a processed substrate having the first surface and a second surface opposite the first surface and to expose a portion of the at least one conductive structure adjacent to the second surface. The at least one conductive structure continuously extending from the first surface through the processed substrate to the second surface of the processed substrate, at least one sidewall of the at least one conductive structure spaced from a sidewall of the at least one opening by an air gap.
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公开(公告)号：US09754831B2
公开(公告)日：2017-09-05
申请号：US15243527
申请日：2016-08-22
发明人： Pei-Ching Kuo , Yi-Hsiu Chen , Jun-Lin Yeh , Yung-Chi Lin , Li-Han Hsu , Wei-Cheng Wu , Ku-Feng Yang , Wen-Chih Chiou
IPC分类号： H01L21/768 , H01L23/48 , H01L23/00 , H01L23/528 , H01L23/522 , H01L23/532
CPC分类号： H01L21/76898 , H01L21/76802 , H01L21/7684 , H01L21/76879 , H01L23/481 , H01L23/522 , H01L23/5226 , H01L23/528 , H01L23/53238 , H01L24/06 , H01L2224/05025 , H01L2924/2075 , H01L2924/20751
摘要： Apparatus, and methods of manufacture thereof, in which metal is deposited into openings, thus forming a plurality of metal pads, a plurality of through-silicon-vias (TSVs), a plurality of metal lines, a plurality of first dummy structures, and a plurality of second dummy structures. Ones of the plurality of first dummy structures each have a first width that is at least about three times greater than a second width of each of the plurality of metal lines, and ones of the plurality of second dummy structures each have a third width that is at least about five times greater than the second width of each of the plurality of metal lines.
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公开(公告)号：US20160358818A1
公开(公告)日：2016-12-08
申请号：US15243527
申请日：2016-08-22
发明人： Pei-Ching Kuo , Yi-Hsiu Chen , Jun-Lin Yeh , Yung-Chi Lin , Li-Han Hsu , Wei-Cheng Wu , Ku-Feng Yang , Wen-Chih Chiou
IPC分类号： H01L21/768 , H01L23/522 , H01L23/532 , H01L23/528
CPC分类号： H01L21/76898 , H01L21/76802 , H01L21/7684 , H01L21/76879 , H01L23/481 , H01L23/522 , H01L23/5226 , H01L23/528 , H01L23/53238 , H01L24/06 , H01L2224/05025 , H01L2924/2075 , H01L2924/20751
摘要： Apparatus, and methods of manufacture thereof, in which metal is deposited into openings, thus forming a plurality of metal pads, a plurality of through-silicon-vias (TSVs), a plurality of metal lines, a plurality of first dummy structures, and a plurality of second dummy structures. Ones of the plurality of first dummy structures each have a first width that is at least about three times greater than a second width of each of the plurality of metal lines, and ones of the plurality of second dummy structures each have a third width that is at least about five times greater than the second width of each of the plurality of metal lines.
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公开(公告)号：US09425126B2
公开(公告)日：2016-08-23
申请号：US14289819
申请日：2014-05-29
发明人： Pei-Ching Kuo , Yi-Hsiu Chen , Jun-Lin Yeh , Yung-Chi Lin , Li-Han Hsu , Wei-Cheng Wu , Ku-Feng Yang , Wen-Chih Chiou
IPC分类号： H01L23/00 , H01L23/48 , H01L21/768 , H01L23/528 , H01L23/522
CPC分类号： H01L21/76898 , H01L21/76802 , H01L21/7684 , H01L21/76879 , H01L23/481 , H01L23/522 , H01L23/5226 , H01L23/528 , H01L23/53238 , H01L24/06 , H01L2224/05025 , H01L2924/2075 , H01L2924/20751
摘要： Apparatus, and methods of manufacture thereof, in which metal is deposited into openings, thus forming a plurality of metal pads, a plurality of through-silicon-vias (TSVs), a plurality of metal lines, a plurality of first dummy structures, and a plurality of second dummy structures. Ones of the plurality of first dummy structures each have a first width that is at least about three times greater than a second width of each of the plurality of metal lines, and ones of the plurality of second dummy structures each have a third width that is at least about five times greater than the second width of each of the plurality of metal lines.
摘要翻译： 设备及其制造方法，其中金属沉积到开口中，从而形成多个金属焊盘，多个通硅通孔（TSV），多条金属线，多个第一虚拟结构和 多个第二虚拟结构。 多个第一虚拟结构的每一个具有比多个金属线中的每一个的第二宽度大至少约三倍的第一宽度，并且多个第二虚设结构中的一个具有第三宽度， 比所述多个金属线中的每一个的第二宽度大至少约五倍。
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公开(公告)号：US20150348872A1
公开(公告)日：2015-12-03
申请号：US14289819
申请日：2014-05-29
发明人： Pei-Ching Kuo , Yi-Hsiu Chen , Jun-Lin Yeh , Yung-Chi Lin , Li-Han Hsu , Wei-Cheng Wu , Ku-Feng Yang , Wen-Chih Chiou
IPC分类号： H01L23/48 , H01L23/00 , H01L23/528 , H01L21/768
CPC分类号： H01L21/76898 , H01L21/76802 , H01L21/7684 , H01L21/76879 , H01L23/481 , H01L23/522 , H01L23/5226 , H01L23/528 , H01L23/53238 , H01L24/06 , H01L2224/05025 , H01L2924/2075 , H01L2924/20751
摘要： Apparatus, and methods of manufacture thereof, in which metal is deposited into openings, thus forming a plurality of metal pads, a plurality of through-silicon-vias (TSVs), a plurality of metal lines, a plurality of first dummy structures, and a plurality of second dummy structures. Ones of the plurality of first dummy structures each have a first width that is at least about three times greater than a second width of each of the plurality of metal lines, and ones of the plurality of second dummy structures each have a third width that is at least about five times greater than the second width of each of the plurality of metal lines.
摘要翻译： 设备及其制造方法，其中金属沉积到开口中，从而形成多个金属焊盘，多个通硅通孔（TSV），多条金属线，多个第一虚拟结构和 多个第二虚拟结构。 多个第一虚拟结构的每一个具有比多个金属线中的每一个的第二宽度大至少约三倍的第一宽度，并且多个第二虚设结构中的一个具有第三宽度， 比所述多个金属线中的每一个的第二宽度大至少约五倍。
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