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1.发明申请公开(公告)号：US20170236863A1
公开(公告)日：2017-08-17
申请号：US15583278
申请日：2017-05-01
发明人： Yin-Kai Liao , Han-Chi Liu , Yuan-Hung Liu , Dun-Nian Yaung , Jen-Cheng Liu
IPC分类号： H01L27/146
CPC分类号： H01L27/14629 , H01L21/76829 , H01L21/76831 , H01L27/14603 , H01L27/14614 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14636 , H01L27/1464 , H01L27/14645 , H01L27/14683 , H01L27/14685 , H04N3/155
摘要： A system and method for image sensing is disclosed. An embodiment comprises a substrate with a pixel region and a logic region. A first resist protect oxide (RPO) is formed over the pixel region, but not over the logic region. Silicide contacts are formed on the top of active devices formed in the pixel region, but not on the surface of the substrate in the pixel region, and silicide contacts are formed both on the top of active devices and on the surface of the substrate in the logic region. A second RPO is formed over the pixel region and the logic region, and a contact etch stop layer is formed over the second RPO. These layers help to reflect light back to the image sensor when light impinges the sensor from the backside of the substrate, and also helps prevent damage that occurs from overetching.
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公开(公告)号：US09953920B2
公开(公告)日：2018-04-24
申请号：US14685023
申请日：2015-04-13
发明人： Hsin-Yu Chen , Ku-Feng Yang , Tasi-Jung Wu , Lin-Chih Huang , Yuan-Hung Liu , Tsang-Jiuh Wu , Wen-Chih Chiou
IPC分类号： H01L21/00 , H01L23/528 , H01L23/522 , H01L27/06 , H01L23/538
CPC分类号： H01L23/528 , H01L21/76807 , H01L23/3114 , H01L23/3171 , H01L23/481 , H01L23/5226 , H01L23/53223 , H01L23/53238 , H01L23/53266 , H01L23/5384 , H01L27/0617 , H01L2221/1031 , H01L2224/13 , H01L2924/13091 , H01L2924/00
摘要： An apparatus comprises an interlayer dielectric layer formed on a first side of a substrate, a first photo-sensitive dielectric layer formed over the interlayer dielectric layer, wherein the first photo-sensitive dielectric layer comprises a first metal structure and a second photo-sensitive dielectric layer formed over the first photo-sensitive dielectric, wherein the second photo-sensitive dielectric layer comprises a second metal structure having a bottom surface coplanar with a top surface of the first metal structure.
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3.发明授权公开(公告)号：US09640582B2
公开(公告)日：2017-05-02
申请号：US14721375
申请日：2015-05-26
发明人： Yin-Kai Liao , Han-Chi Liu , Yuan-Hung Liu , Dun-Nian Yaung , Jen-Cheng Liu
IPC分类号： H01L27/146 , H04N3/14 , H01L21/768
CPC分类号： H01L27/14629 , H01L21/76829 , H01L21/76831 , H01L27/14603 , H01L27/14614 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14636 , H01L27/1464 , H01L27/14645 , H01L27/14683 , H01L27/14685 , H04N3/155
摘要： A system and method for image sensing is disclosed. An embodiment comprises a substrate with a pixel region and a logic region. A first resist protect oxide (RPO) is formed over the pixel region, but not over the logic region. Silicide contacts are formed on the top of active devices formed in the pixel region, but not on the surface of the substrate in the pixel region, and silicide contacts are formed both on the top of active devices and on the surface of the substrate in the logic region. A second RPO is formed over the pixel region and the logic region, and a contact etch stop layer is formed over the second RPO. These layers help to reflect light back to the image sensor when light impinges the sensor from the backside of the substrate, and also helps prevent damage that occurs from overetching.
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公开(公告)号：US20150041874A1
公开(公告)日：2015-02-12
申请号：US14525412
申请日：2014-10-28
发明人： Chih-Ta Wu , Jason Lee , Chung Chien Wang , Hsing-Lien Lin , Yu-Jen Wang , Yeur-Luen Tu , Chern-Yow Hsu , Yuan-Hung Liu , Chi-Hsin Lo , Chia-Shiung Tsai
IPC分类号： H01L27/108 , H01L49/02
CPC分类号： H01L27/10814 , H01L27/10852 , H01L28/40 , H01L28/75
摘要： A capacitor and methods for forming the same are provided. The method includes forming a bottom electrode; treating the bottom electrode in an oxygen-containing environment to convert a top layer of the bottom electrode into a buffer layer; forming an insulating layer on the buffer layer; and forming a top electrode over the insulating layer.
摘要翻译： 提供电容器及其形成方法。 该方法包括形成底部电极; 在含氧环境中处理底部电极以将底部电极的顶层转化为缓冲层; 在缓冲层上形成绝缘层; 并在所述绝缘层上形成顶部电极。
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公开(公告)号：US10153338B2
公开(公告)日：2018-12-11
申请号：US15497594
申请日：2017-04-26
发明人： Chun Hua Chang , Der-Chyang Yeh , Kuang-Wei Cheng , Yuan-Hung Liu , Shang-Yun Hou , Wen-Chih Chiou , Shin-Puu Jeng
IPC分类号： H01L21/20 , H01L49/02 , H01L21/768 , H01L23/522 , H01L23/532 , H01L23/528
摘要： A method of forming a device includes forming a through via extending into a substrate. The method further includes forming a first insulating layer over the surface of the substrate. The method further includes forming a first metallization layer in the first insulating layer and electrically connected to the through via. The method further includes forming a capacitor over the first metallization layer, wherein the capacitor comprises a first capacitor dielectric layer and a second capacitor dielectric layer. The method further includes depositing a continuous second insulating layer over the first insulating layer. The capacitor is within the second insulating layer. The method further includes depositing a third insulating layer over the second insulating layer. The method further includes forming a second metallization layer in the third insulating layer. A bottom surface of the second metallization layer is below a bottom surface of the third insulating layer.
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公开(公告)号：US09660016B2
公开(公告)日：2017-05-23
申请号：US14515368
申请日：2014-10-15
发明人： Chun Hua Chang , Der-Chyang Yeh , Kuang-Wei Cheng , Yuan-Hung Liu , Shang-Yun Hou , Wen-Chih Chiou , Shin-Puu Jeng
IPC分类号： H01L21/20 , H01L49/02 , H01L23/498 , H01L23/522 , H01L23/532 , H01L23/14 , H01L21/02 , H01L29/02 , H01L21/768 , H01L23/50
CPC分类号： H01L28/40 , H01L21/02 , H01L21/768 , H01L23/147 , H01L23/49822 , H01L23/49827 , H01L23/50 , H01L23/5223 , H01L23/53295 , H01L28/60 , H01L29/02 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a device comprises forming a through via extending from a surface of a substrate into the substrate. The method also comprises forming a first insulating layer over the surface of the substrate. The method further comprises forming a first metallization layer in the first insulating layer, the first metallization layer electrically connecting the through via. The method additionally comprises forming a capacitor over the first metallization layer. The capacitor comprises a first capacitor dielectric layer over the first metallization layer and a second capacitor dielectric layer over the first capacitor dielectric layer. The method also comprises forming a second metallization layer over and electrically connecting the capacitor.
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7.发明申请公开(公告)号：US20150279886A1
公开(公告)日：2015-10-01
申请号：US14721375
申请日：2015-05-26
发明人： Yin-Kai Liao , Han-Chi Liu , Yuan-Hung Liu , Dun-Nian Yaung , Jen-Cheng Liu
IPC分类号： H01L27/146
CPC分类号： H01L27/14629 , H01L21/76829 , H01L21/76831 , H01L27/14603 , H01L27/14614 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14636 , H01L27/1464 , H01L27/14645 , H01L27/14683 , H01L27/14685 , H04N3/155
摘要： A system and method for image sensing is disclosed. An embodiment comprises a substrate with a pixel region and a logic region. A first resist protect oxide (RPO) is formed over the pixel region, but not over the logic region. Silicide contacts are formed on the top of active devices formed in the pixel region, but not on the surface of the substrate in the pixel region, and silicide contacts are formed both on the top of active devices and on the surface of the substrate in the logic region. A second RPO is formed over the pixel region and the logic region, and a contact etch stop layer is formed over the second RPO. These layers help to reflect light back to the image sensor when light impinges the sensor from the backside of the substrate, and also helps prevent damage that occurs from overetching.
摘要翻译： 公开了一种用于图像感测的系统和方法。 实施例包括具有像素区域和逻辑区域的基板。 在像素区域上形成第一抗蚀保护氧化物（RPO），但不在逻辑区域上。 硅化物接触形成在像素区域中形成的有源器件的顶部上，而不是在像素区域中的衬底的表面上，并且在有源器件的顶部和衬底的表面上形成硅化物接触 逻辑区域。 在像素区域和逻辑区域上形成第二RPO，并且在第二RPO上形成接触蚀刻停止层。 当光从基板的背面入射传感器时，这些层有助于将光反射回图像传感器，并且还有助于防止由过蚀刻引起的损坏。
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公开(公告)号：US09263382B2
公开(公告)日：2016-02-16
申请号：US14334100
申请日：2014-07-17
发明人： Ku-Feng Yang , Tsang-Jiuh Wu , Yi-Hsiu Chen , Ebin Liao , Yuan-Hung Liu , Wen-Chih Chiou
IPC分类号： H01L23/522 , H01L21/768 , H01L23/48 , H01L23/00
CPC分类号： H01L23/5226 , H01L21/76879 , H01L21/76898 , H01L23/481 , H01L24/05 , H01L2224/05006 , H01L2224/05009 , H01L2224/05546 , H01L2924/1305 , H01L2924/13091 , H01L2924/00
摘要： A structure includes a substrate, and an interconnect structure over the substrate. The structure further includes a through-substrate-via (TSV) extending through the interconnect structure and into the substrate, the TSV comprising a conductive material layer. The structure further includes a dielectric layer having a first portion over the interconnect structure and a second portion within the TSV, wherein the first portion and the second portion comprise a same material. The conductive material layer includes a first section separated from substrate by the second portion of the dielectric layer. The conductive material layer further includes a second section over a top surface of the second portion of the dielectric layer. The conductive material layer further includes a third section over the second section, wherein the third section has a width greater than a width of the second section.
摘要翻译： 一种结构包括衬底和衬底上的互连结构。 该结构还包括延伸穿过互连结构并进入衬底的贯穿衬底通孔（TSV），TSV包括导电材料层。 该结构还包括介电层，其具有互连结构上的第一部分和TSV内的第二部分，其中第一部分和第二部分包括相同的材料。 导电材料层包括通过介电层的第二部分与衬底分离的第一部分。 导电材料层还包括在电介质层的第二部分的顶表面上的第二部分。 导电材料层还包括在第二部分上的第三部分，其中第三部分具有大于第二部分的宽度的宽度。
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公开(公告)号：US10269848B2
公开(公告)日：2019-04-23
申请号：US15583278
申请日：2017-05-01
发明人： Yin-Kai Liao , Han-Chi Liu , Yuan-Hung Liu , Dun-Nian Yaung , Jen-Cheng Liu
IPC分类号： H01L27/146 , H04N3/14 , H01L21/768
摘要： A system and method for image sensing is disclosed. An embodiment comprises a substrate with a pixel region and a logic region. A first resist protect oxide (RPO) is formed over the pixel region, but not over the logic region. Silicide contacts are formed on the top of active devices formed in the pixel region, but not on the surface of the substrate in the pixel region, and silicide contacts are formed both on the top of active devices and on the surface of the substrate in the logic region. A second RPO is formed over the pixel region and the logic region, and a contact etch stop layer is formed over the second RPO. These layers help to reflect light back to the image sensor when light impinges the sensor from the backside of the substrate, and also helps prevent damage that occurs from overetching.
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10.发明授权公开(公告)号：US09773701B2
公开(公告)日：2017-09-26
申请号：US14692799
申请日：2015-04-22
发明人： Yuan-Hung Liu , Ku-Feng Yang , Pei-Ching Kuo , Ming-Tsu Chung , Hsin-Yu Chen , Tsang-Jiuh Wu , Wen-Chih Chiou
IPC分类号： H01L21/768 , H01L23/48 , H01L25/065 , H01L25/00 , H01L21/285
CPC分类号： H01L21/76898 , H01L21/2855 , H01L21/28556 , H01L21/7682 , H01L21/76831 , H01L21/7684 , H01L21/76879 , H01L23/481 , H01L25/0657 , H01L25/50 , H01L2224/0401 , H01L2224/05009 , H01L2225/06541 , H01L2924/1305 , H01L2924/13091 , H01L2924/00
摘要： A method of forming an integrated circuit includes forming at least one opening through a first surface of a substrate. The method further includes forming at least one conductive structure in the at least one opening. The method further includes removing a portion of the substrate to form a processed substrate having the first surface and a second surface opposite the first surface and to expose a portion of the at least one conductive structure adjacent to the second surface. The at least one conductive structure continuously extending from the first surface through the processed substrate to the second surface of the processed substrate, at least one sidewall of the at least one conductive structure spaced from a sidewall of the at least one opening by an air gap.
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