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公开(公告)号：US20250022932A1
公开(公告)日：2025-01-16
申请号：US18351761
申请日：2023-07-13
Inventor： Chiao-Chun Hsu , Chu Fu Chen , Ting-Yu Chen
IPC: H01L29/47 , H01L29/20 , H01L29/40 , H01L29/66 , H01L29/778
Abstract: Some embodiments relate to an integrated device, including a semiconductor film accommodating a two-dimensional carrier gas (2DCG) over a substrate; a first source/drain electrode over the semiconductor film; a second source/drain electrode over the semiconductor film; a semiconductor capping structure between the first source/drain electrode and the second source/drain electrode; a first gate overlying the semiconductor capping structure and between the first source/drain electrode and the second source/drain electrode in a first direction; a first helping gate overlying the semiconductor capping structure and bordering the first gate, wherein the first helping gate and the second source/drain electrode are arranged in a line extending in a second direction transverse to the first direction.
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公开(公告)号：US20240023445A1
公开(公告)日：2024-01-18
申请号：US18357318
申请日：2023-07-24
Inventor： Chih-Ming Chen , Chiao-Chun Hsu , Chung-Yi Yu
IPC: H10N30/053 , C23C16/458 , C23C16/46 , H10N30/067 , H10N30/078
CPC classification number: H10N30/053 , C23C16/4588 , C23C16/46 , H10N30/067 , H10N30/078
Abstract: In some embodiments, the present disclosure relates to a processing tool that includes a wafer chuck disposed within a hot plate chamber and having an upper surface is configured to hold a semiconductor wafer. A heating element is disposed within the wafer chuck and is configured to increase a temperature of the wafer chuck. A motor is coupled to the wafer chuck and configured to rotate the wafer chuck around an axis of rotation extending through the upper surface of the wafer chuck. The processing tool further includes control circuitry coupled to the motor and configured to operate the motor to rotate the wafer chuck while the temperature of the wafer chuck is increased to form a piezoelectric layer from a sol-gel solution layer on the semiconductor wafer.
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公开(公告)号：US20240379713A1
公开(公告)日：2024-11-14
申请号：US18782118
申请日：2024-07-24
Inventor： Yu-Hung Cheng , Chun-Tsung Kuo , Jiech-Fun Lu , Min-Ying Tsai , Chiao-Chun Hsu , Ching I Li
IPC: H01L27/146
Abstract: The present disclosure relates to an image sensor having a photodiode surrounded by a back-side deep trench isolation (BDTI) structure, and an associated method of formation. In some embodiments, a plurality of pixel regions is disposed within an image sensing die and respectively comprises a photodiode configured to convert radiation into an electrical signal. The photodiode comprises a photodiode doping column with a first doping type surrounded by a photodiode doping layer with a second doping type that is different than the first doping type. A BDTI structure is disposed between adjacent pixel regions and extending from the back-side of the image sensor die to a position within the photodiode doping layer. The BDTI structure comprises a doped liner with the second doping type and a dielectric fill layer. The doped liner lines a sidewall surface of the dielectric fill layer.
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公开(公告)号：US12254262B2
公开(公告)日：2025-03-18
申请号：US17462747
申请日：2021-08-31
Inventor： Chia-Chung Chen , Shufang Fu , Kuan-Hung Liu , Chiao-Chun Hsu , Fu-Yu Shih , Chi-Feng Huang , Chu Fu Chen
IPC: G06F30/398 , H01L29/66 , G06F119/02 , G06F119/18
Abstract: A calibration method for emulating a Group III-V semiconductor device, a method for determining trap location within a Group III-V semiconductor device and method for manufacturing a Group III-V semiconductor device are provided. Actual tape-out is performed according to an actual process flow of the Group III-V semiconductor device for manufacturing the Group III-V semiconductor devices and PCM Group III-V semiconductor device. Actual electrical performances of the Group III-V semiconductor devices and the PCM Group III-V semiconductor device are obtained and the actual electrical performances of the Group III-V semiconductor devices and the PCM Group III-V semiconductor device are compared to determine locations where one or more traps appear.
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Patent Agency Ranking
公开(公告)号：US20220311357A1
公开(公告)日：2022-09-29
申请号：US17842101
申请日：2022-06-16
Inventor： Chiao-Chun Hsu , Chih-Ming Chen , Chung-Yi Yu , Lung Yuan Pan
IPC: H02N1/00
Abstract: In some embodiments, the present disclosure relates to a microelectromechanical system (MEMS) comb actuator including a comb structure. The comb structure includes a support layer having a first material and a plurality of protrusions extending away from a first surface of the support layer in a first direction. The plurality of protrusions are also made of the first material. The plurality of protrusions are separated along a second direction parallel to the first surface of the support layer. The MEMS comb actuator may further include a dielectric liner structure that continuously and completely covers the first surface of the support layer and outer surfaces of the plurality of protrusions. The dielectric liner structure includes a connective portion that continuously connects topmost surfaces of at least two of the plurality of protrusions.
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公开(公告)号：US20210285107A1
公开(公告)日：2021-09-16
申请号：US17336810
申请日：2021-06-02
Inventor： Chiao-Chun Hsu , Chih-Ming Chen , Chung-Yi Yu , Sheng-Hsun Lu
Abstract: In some embodiments, a semiconductor fabrication tool is provided. The semiconductor fabrication tool includes a first processing zone having a first ambient environment and a second processing zone having a second ambient environment disposed at different location inside a processing chamber. A first exhaust port and a second exhaust port are disposed in the first and second processing zones, respectively. A first exhaust pipe couples the first exhaust port to a first individual exhaust output. A second exhaust pipe couples the second exhaust port to a second individual exhaust output, where the second exhaust pipe is separate from the first exhaust pipe. A first adjustable fluid control element controls the first ambient environment. A second adjustable fluid control element controls the second ambient environment, where the first adjustable fluid control element and the second adjustable fluid control element are independently adjustable.
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公开(公告)号：US20240018661A1
公开(公告)日：2024-01-18
申请号：US18357302
申请日：2023-07-24
Inventor： Chiao-Chun Hsu , Chih-Ming Chen , Chung-Yi Yu , Sheng-Hsun Lu
CPC classification number: C23C18/1254 , C23C18/1283 , C23C18/1291 , C23C18/1287 , H01L21/02282 , H01L21/6715 , H01L21/67253 , H01L21/67178 , H01L21/6719 , H01L21/67103 , H01L21/67017
Abstract: In some embodiments, a semiconductor fabrication tool is provided. The semiconductor fabrication tool includes a first heating plate arranged within a processing chamber and a second heating plate arranged within the processing chamber vertically over the first heating plate. A first exhaust port is arranged within the processing chamber and a second exhaust port arranged within the processing chamber vertically over the first exhaust port. The first exhaust port is in communication with the first heating plate and is coupled to a first exhaust output. The second exhaust port is in communication with the second heating plate and is coupled to a second exhaust output. A first control element is configured to control a first exhaust pressure at the first exhaust port and a second control element is configured to control a second exhaust pressure at the second exhaust port.
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公开(公告)号：US11814731B2
公开(公告)日：2023-11-14
申请号：US17336810
申请日：2021-06-02
Inventor： Chiao-Chun Hsu , Chih-Ming Chen , Chung-Yi Yu , Sheng-Hsun Lu
CPC classification number: C23C18/1254 , C23C18/1283 , C23C18/1287 , C23C18/1291 , H01L21/02282 , H01L21/6715 , H01L21/6719 , H01L21/67103 , H01L21/67178 , H01L21/67253 , H01L21/67017
Abstract: In some embodiments, a semiconductor fabrication tool is provided. The semiconductor fabrication tool includes a first processing zone having a first ambient environment and a second processing zone having a second ambient environment disposed at different location inside a processing chamber. A first exhaust port and a second exhaust port are disposed in the first and second processing zones, respectively. A first exhaust pipe couples the first exhaust port to a first individual exhaust output. A second exhaust pipe couples the second exhaust port to a second individual exhaust output, where the second exhaust pipe is separate from the first exhaust pipe. A first adjustable fluid control element controls the first ambient environment. A second adjustable fluid control element controls the second ambient environment, where the first adjustable fluid control element and the second adjustable fluid control element are independently adjustable.
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公开(公告)号：US20220384496A1
公开(公告)日：2022-12-01
申请号：US17883668
申请日：2022-08-09
Inventor： Yu-Hung Cheng , Chun-Tsung Kuo , Jiech-Fun Lu , Min-Ying Tsai , Chiao-Chun Hsu , Ching I Li
IPC: H01L27/146
Abstract: The present disclosure relates to an image sensor having a photodiode surrounded by a back-side deep trench isolation (BDTI) structure, and an associated method of formation. In some embodiments, a plurality of pixel regions is disposed within an image sensing die and respectively comprises a photodiode configured to convert radiation into an electrical signal. The photodiode comprises a photodiode doping column with a first doping type surrounded by a photodiode doping layer with a second doping type that is different than the first doping type. A BDTI structure is disposed between adjacent pixel regions and extending from the back-side of the image sensor die to a position within the photodiode doping layer. The BDTI structure comprises a doped liner with the second doping type and a dielectric fill layer. The doped liner lines a sidewall surface of the dielectric fill layer.
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