公开(公告)号：US20240250048A1

公开(公告)日：2024-07-25

申请号：US18561435

申请日：2022-03-25

Applicant: TDK CORPORATION

Inventor： Kosuke TANAKA ,  Masato SATO ,  Kenta ONO ,  Takashi WATANABE

IPC: H01L23/00 ,  H01L23/29 ,  H01L23/31

CPC classification number: H01L24/05 ,  H01L23/291 ,  H01L23/3171 ,  H01L24/03 ,  H01L23/293 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/05007 ,  H01L2224/05017 ,  H01L2224/05018 ,  H01L2224/05083 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05573 ,  H01L2224/05644 ,  H01L2924/365 ,  H01L2924/381

Abstract: In the electronic component, the second portion of the diffusion prevention layer extends parallel to the main surface of the base material. When the electronic component is surface-mounted on the mounting substrate, the conductive bonding material such as solder is interposed between the electrodes of the electronic component and the land electrodes of the mounting substrate. In the case that the bonding surface between the diffusion prevention layer and the substrate is wide, it is difficult for the metal component of the bonding material to reach the body portion of the electrodes through the bonding surface. Therefore, a situation in which metal component of the bonding material diffuse into the body portion is suppressed, and a decrease in strength of the electrodes due to the diffusion is suppressed.

公开(公告)号：US20230025223A1

公开(公告)日：2023-01-26

申请号：US17779619

申请日：2020-11-26

Applicant: TDK CORPORATION

Inventor： Yoshinori FUJIKAWA ,  Atsushi KODA ,  Mika JINGU ,  Takashi WATANABE

IPC: H01F1/057 ,  C22C38/00

Abstract: An R-T-B based permanent magnet including R2T14B main phase crystal grains and a grain boundary. R represents one or more rare earth elements, T represents one or more iron group elements essentially including Fe or Fe and Co, and B represents boron. In a cross-section parallel to the alignment direction of the R-T-B based permanent magnet, the coverage of the R2T14B main phase crystal grains is 50.0% or more, and the area ratio of the R2T14B main phase crystal grains is 92.0% or more.

公开(公告)号：US20170250013A1

公开(公告)日：2017-08-31

申请号：US15440443

申请日：2017-02-23

Applicant: TDK CORPORATION

Inventor： Tamotsu ISHIYAMA ,  Masashi MIWA ,  Takashi WATANABE

IPC: H01F1/053 ,  C22C38/14 ,  C22C38/10 ,  C21D3/06 ,  C22C38/00 ,  B22F9/04 ,  B22F3/16 ,  B22F5/00 ,  C22C38/16 ,  C22C38/06

Abstract: An R-T-B based permanent magnet includes main phase grains composed of R2T14B type compound. R is a rare earth element. T is iron group element(s) essentially including Fe or Fe and Co. B is boron. An average grain size of the main phase grains is 0.8 μm to 2.8 μm. The R-T-B based permanent magnet contains at least C and Ga in addition to R, T, and B. B is contained at 0.71 mass % to 0.86 mass %. C is contained at 0.13 mass % to 0.34 mass %. Ga is contained at 0.40 mass % to 1.80 mass %. A formula (1) of 0.14≦[C]/([B]+[C])≦0.30 is satisfied, where [B] is a B content represented by atom %, and [C] is a C content represented by atom %.

公开(公告)号：US20210043344A1

公开(公告)日：2021-02-11

申请号：US16965905

申请日：2019-01-29

Applicant: TDK CORPORATION

Inventor： Masaki TOMITA ,  Ryuji HASHIMOTO ,  Takashi WATANABE

IPC: H01F1/059

Abstract: A permanent magnet including R and T. R are rare earth elements including Sm and at least one selected from Y and Gd. T is Fe alone or Fe and Co. T maybe partly substituted with M, and M is one or more selected from Ti, V, Cr, Mo, W, Zr, Hf, Nb, Ta, Al, Si, Cu, Zn, Ga and Ge. In a total content of R, Sm content is 60 at % or more and 95 at % or less, and a total content of Y and Gd is 5 at % or more and 35 at % or less. The permanent magnet includes main phase crystal grains having a ThMn12 type crystal structure.

公开(公告)号：US20230246006A1

公开(公告)日：2023-08-03

申请号：US18162183

申请日：2023-01-31

Applicant: TDK CORPORATION

Inventor： Ryohei KASAI ,  Takashi WATANABE ,  Susumu TANIGUCHI ,  Tomohisa MITOSE ,  Yuhei HOTTA

IPC: H01L25/075 ,  H01L23/00

CPC classification number: H01L25/0753 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/16225 ,  H01L2224/05073 ,  H01L2224/05144 ,  H01L2224/05139 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/16503 ,  H01L2924/01327 ,  H01L2924/12041

Abstract: A joint structure, in which an electronic component and a wiring substrate are joined to each other, includes: a first layer being provided on one side of the electronic component and the wiring substrate, and being composed of a first metal containing Sn; a second layer being provided on the other side of the electronic component and the wiring substrate, and being composed of a second metal that forms an intermetallic compound with Sn; and a third layer being provided at a joint interface between the first layer and the second layer, and being composed of an intermetallic compound of the first metal and the second metal. An average thickness of the third layer is 0.1 μm or more to 0.5 μm or less.

公开(公告)号：US20230163249A1

公开(公告)日：2023-05-25

申请号：US17991261

申请日：2022-11-21

Applicant: TDK CORPORATION

Inventor： Akiko SEKI ,  Takashi WATANABE ,  Yukari WADA ,  Susumu TANIGUCHI ,  Hiroyuki UEMATSU

IPC: H01L33/48 ,  H01L33/62 ,  H01L33/60

CPC classification number: H01L33/486 ,  H01L33/62 ,  H01L33/60

Abstract: A circuit substrate is a circuit substrate having at least one pair of terminals, wherein a bonding material containing a metal element is disposed above the terminals, the pair of terminals and the bonding material are disposed inside a wall formed by an insulator, and the wall has an uneven portion on an inner side surface.