公开(公告)号：US20140151634A1

公开(公告)日：2014-06-05

申请号：US14174581

申请日：2014-02-06

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Shuji Nakamura ,  Steven P. DenBaars ,  Shinichi Tanaka ,  Daniel F. Feezell ,  Yuji Zhao ,  Chih-Chien Pan

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/00

CPC classification number: H01L33/06 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/0062 ,  H01L33/0075 ,  H01L33/16 ,  H01L33/32

Abstract: A light emitting diode structure of (Al,Ga,In)N thin films grown on a gallium nitride (GaN) semipolar substrate by metal organic chemical vapor deposition (MOCVD) that exhibits reduced droop. The device structure includes a quantum well (QW) active region of two or more periods, n-type superlattice layers (n-SLs) located below the QW active region, and p-type superlattice layers (p-SLs) above the QW active region. The present invention also encompasses a method of fabricating such a device.

Abstract translation: 通过金属有机化学气相沉积（MOCVD）在氮化镓（GaN）半极性衬底上生长的（Al，Ga，In）N薄膜的发光二极管结构，其呈现减小的下垂。 该器件结构包括两个或多个周期的量子阱（QW）有源区，位于QW有源区下面的n型超晶格层（n-SL）以及QW有源区以上的p型超晶格层（p-SL） 地区。 本发明还包括制造这种装置的方法。

公开(公告)号：US20130299777A1

公开(公告)日：2013-11-14

申请号：US13890664

申请日：2013-05-09

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Shuji Nakamura ,  Steven P. DenBaars ,  Daniel F. Feezell ,  James S. Speck ,  Chih-Chien Pan

IPC: H01L33/16 ,  H01L33/00

CPC classification number: H01L33/16 ,  H01L33/0075 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A III-nitride based LED with an External Quantum Efficiency (EQE) droop of less than 10% when a junction temperature of the LED is increased from 20 ° C. to at least 100 ° C. at a current density of the LED of at least 20 Amps per centimeter square.

Abstract translation: 当LED的结温从20℃增加到至少100℃时，具有小于10％的具有外部量子效率（EQE）的III族氮化物基LED，其LED的电流密度在 每平方厘米最少20安培