公开(公告)号：US20140167059A1

公开(公告)日：2014-06-19

申请号：US14014904

申请日：2013-08-30

Applicant: The Regents of the University of California

Inventor： Chung-Ta Hsu ,  Chia-Yen Huang ,  Yuji Zhao ,  Shih-Chieh Haung ,  Daniel F. Feezell ,  Steven P. DenBaars ,  Shuji Nakamura ,  James S. Speck

IPC: H01L33/00 ,  H01L33/32

CPC classification number: H01L33/0075 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/16 ,  H01L33/32

Abstract: A method of performing a photoelectrochemical (PEC) etch on an exposed surface of a semipolar {20-2-1} III-nitride semiconductor, for improving light extraction from and for enhancing external efficiency of one or more active layers formed on or above the semipolar {20-2-1} III-nitride semiconductor.

Abstract translation: 在半极{20-2-1} III-氮化物半导体的暴露表面上执行光电化学（PEC）蚀刻的方法，用于改善从或在其上形成的一个或多个活性层的光提取和增强外部效率 半极性{20-2-1} III族氮化物半导体。

公开(公告)号：US20140151634A1

公开(公告)日：2014-06-05

申请号：US14174581

申请日：2014-02-06

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Shuji Nakamura ,  Steven P. DenBaars ,  Shinichi Tanaka ,  Daniel F. Feezell ,  Yuji Zhao ,  Chih-Chien Pan

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/00

CPC classification number: H01L33/06 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/0062 ,  H01L33/0075 ,  H01L33/16 ,  H01L33/32

Abstract: A light emitting diode structure of (Al,Ga,In)N thin films grown on a gallium nitride (GaN) semipolar substrate by metal organic chemical vapor deposition (MOCVD) that exhibits reduced droop. The device structure includes a quantum well (QW) active region of two or more periods, n-type superlattice layers (n-SLs) located below the QW active region, and p-type superlattice layers (p-SLs) above the QW active region. The present invention also encompasses a method of fabricating such a device.

Abstract translation: 通过金属有机化学气相沉积（MOCVD）在氮化镓（GaN）半极性衬底上生长的（Al，Ga，In）N薄膜的发光二极管结构，其呈现减小的下垂。 该器件结构包括两个或多个周期的量子阱（QW）有源区，位于QW有源区下面的n型超晶格层（n-SL）以及QW有源区以上的p型超晶格层（p-SL） 地区。 本发明还包括制造这种装置的方法。