公开(公告)号：US09793134B2

公开(公告)日：2017-10-17

申请号：US15080666

申请日：2016-03-25

Applicant: Tokyo Electron Limited

Inventor： Yusuke Saitoh ,  Hironobu Ichikawa

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L21/302 ,  H01L21/461 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/033 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575 ,  H01L27/11582

CPC classification number: H01L21/31116 ,  H01L21/0332 ,  H01L21/3065 ,  H01L21/3085 ,  H01L21/31144 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575 ,  H01L27/11582

Abstract: A method of concurrently etching a first region in which silicon oxide films and silicon nitride films are alternately stacked and a second region including the silicon oxide film having a thickness larger than a thickness of the silicon oxide film of the first region is provided. The method includes generating plasma of a first processing gas containing a fluorocarbon gas and a hydrofluorocarbon gas within a processing vessel of a plasma processing apparatus into which a processing target object is carried; and generating plasma of a second processing gas containing a hydrogen gas, a hydrofluorocarbon gas and a nitrogen gas within the processing vessel of the plasma processing apparatus. Further, the generating of the plasma of the first processing gas and the generating of the plasma of the second processing gas are repeated alternately.

公开(公告)号：US20140197135A1

公开(公告)日：2014-07-17

申请号：US14154385

申请日：2014-01-14

Applicant: Tokyo Electron Limited

Inventor： Takayuki Katsunuma ,  Masanobu Honda ,  Hironobu Ichikawa

IPC: H01J37/32

CPC classification number: H01J37/32091 ,  H01J37/32477

Abstract: A plasma processing method includes forming a silicon oxide film on a surface of a member provided within a chamber with plasma of a silicon-containing gas without oxygen while controlling a temperature of the member to be lower than a temperature of another member; performing a plasma process on a target object loaded into the chamber with plasma of a processing gas after the silicon oxide film is formed on the surface of the member; and removing the silicon oxide film from the surface of the member with plasma of a fluorine-containing gas after the target object on which the plasma process is performed is unloaded to an outside of the chamber.

Abstract translation: 等离子体处理方法包括在设置在室内的构件的表面上形成氧化硅膜，其中含有含硅气体的等离子体不含氧，同时将该构件的温度控制在低于另一构件的温度; 在所述构件的表面上形成所述氧化硅膜之后，利用处理气体的等离子体对装载到所述室中的目标物体进行等离子体处理; 并且在执行等离子体处理的目标物体之后，用含氟气体的等离子体从构件的表面去除氧化硅膜被卸载到室外。

公开(公告)号：US09613824B2

公开(公告)日：2017-04-04

申请号：US15150937

申请日：2016-05-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yusuke Saitoh ,  Hironobu Ichikawa ,  Isao Tafusa

IPC: H01L21/311 ,  H01L27/11556 ,  H01L27/11582

CPC classification number: H01L21/31116 ,  H01L21/31144 ,  H01L27/11548 ,  H01L27/11556 ,  H01L27/11575 ,  H01L27/11582

Abstract: The etching method of one embodiment includes a first step of generating a plasma of a first processing gas containing a fluorocarbon gas and a hydrofluorocarbon gas in a processing container of a plasma processing apparatus, and a second step of generating a plasma of a second processing gas containing a hydrofluorocarbon gas and a nitrogen gas in the processing container. In the method, sequences each including the first step and the second step are performed. The plasma is continuously generated over the execution period for the first step and the execution period for the second step. In the second step, a ratio of the flow rate of a hydrogen gas to the flow rate of the second processing gas is set to be small in a period immediately before the execution period for the first step and a period immediately after the execution period for the first step.

公开(公告)号：US20160293439A1

公开(公告)日：2016-10-06

申请号：US15080666

申请日：2016-03-25

Applicant: Tokyo Electron Limited

Inventor： Yusuke Saitoh ,  Hironobu Ichikawa

IPC: H01L21/311 ,  H01L21/027 ,  H01L21/02 ,  H01L27/115

CPC classification number: H01L21/31116 ,  H01L21/0332 ,  H01L21/3065 ,  H01L21/3085 ,  H01L21/31144 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575 ,  H01L27/11582

Abstract: A method of concurrently etching a first region in which silicon oxide films and silicon nitride films are alternately stacked and a second region including the silicon oxide film having a thickness larger than a thickness of the silicon oxide film of the first region is provided. The method includes generating plasma of a first processing gas containing a fluorocarbon gas and a hydrofluorocarbon gas within a processing vessel of a plasma processing apparatus into which a processing target object is carried; and generating plasma of a second processing gas containing a hydrogen gas, a hydrofluorocarbon gas and a nitrogen gas within the processing vessel of the plasma processing apparatus. Further, the generating of the plasma of the first processing gas and the generating of the plasma of the second processing gas are repeated alternately.

Abstract translation: 提供了一种同时蚀刻其中氧化硅膜和氮化硅膜交替堆叠的第一区域和包括厚度大于第一区域的氧化硅膜的厚度的氧化硅膜的第二区域的方法。 该方法包括：在承载有加工对象物的等离子体处理装置的处理容器内产生含有碳氟化合物气体和氢氟烃气体的第一处理气体的等离子体; 以及在所述等离子体处理装置的处理容器内产生含有氢气，氢氟烃气体和氮气的第二处理气体的等离子体。 此外，交替地重复第一处理气体的等离子体的产生和第二处理气体的等离子体的产生。

公开(公告)号：US09318340B2

公开(公告)日：2016-04-19

申请号：US14353451

申请日：2012-10-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takayuki Katsunuma ,  Masanobu Honda ,  Kazuhiro Kubota ,  Hironobu Ichikawa

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/311 ,  H01L21/768

CPC classification number: H01L21/3065 ,  H01J37/32082 ,  H01J37/32642 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/6833 ,  H01L21/76811 ,  H01L21/76813

Abstract: A method of manufacturing a semiconductor device including a wafer using a plasma etching device which includes a chamber, a chuck provided in the chamber to dispose a wafer to be processed thereon, a focus ring disposed at a peripheral edge portion of the chuck, and a gas supplying mechanism configured to supply various types of gases depending a radial position of the wafer. The method includes: placing a wafer formed with an organic film on the chuck; introducing an etching gas which etches the organic film on the wafer from the process gas supplying mechanism to a central portion of the wafer; introducing an etching inhibiting factor gas having a property of reacting with the etching gas to the peripheral edge portion of the wafer from the gas supplying mechanism; and performing plasma etching on the wafer using the etching gas.

Abstract translation: 一种制造半导体器件的方法，该半导体器件包括使用等离子体蚀刻装置的晶片，该等离子体蚀刻装置包括：室，设置在该腔室中的卡盘，以设置待处理的晶片;设置在卡盘的周缘部分的聚焦环， 气体供给机构，被配置为根据晶片的径向位置供应各种类型的气体。 该方法包括：将形成有有机膜的晶片放置在卡盘上; 引入蚀刻气体，其将晶片上的有机膜从处理气体供给机构蚀刻到晶片的中心部分; 将具有与蚀刻气体反应的性质的蚀刻抑制因子气体从气体供给机构引入到晶片的周缘部; 并使用蚀刻气体在晶片上进行等离子体蚀刻。

公开(公告)号：US09881806B2

公开(公告)日：2018-01-30

申请号：US15069460

申请日：2016-03-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takayuki Katsunuma ,  Masanobu Honda ,  Kazuhiro Kubota ,  Hironobu Ichikawa

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/311 ,  H01L21/768 ,  H01L21/683

CPC classification number: H01L21/3065 ,  H01J37/32082 ,  H01J37/32642 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/6833 ,  H01L21/76811 ,  H01L21/76813

Abstract: A method of manufacturing a semiconductor device including a wafer using a plasma etching device which includes a chamber, a chuck provided in the chamber to dispose a wafer to be processed thereon, a focus ring disposed at a peripheral edge portion of the chuck, and a gas supplying mechanism configured to supply various types of gases depending a radial position of the wafer. The method includes: placing a wafer formed with an organic film on the chuck; introducing an etching gas which etches the organic film on the wafer from the process gas supplying mechanism to a central portion of the wafer; introducing an etching inhibiting factor gas having a property of reacting with the etching gas to the peripheral edge portion of the wafer from the gas supplying mechanism; and performing plasma etching on the wafer using the etching gas.

公开(公告)号：US09147580B2

公开(公告)日：2015-09-29

申请号：US13854412

申请日：2013-04-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takayuki Katsunuma ,  Masanobu Honda ,  Hironobu Ichikawa ,  Jin Kudo

IPC: H01L21/3065 ,  H01L21/67 ,  H01J37/32 ,  H01L21/311 ,  H01L21/027

CPC classification number: H01L21/3065 ,  H01J37/32669 ,  H01J2237/334 ,  H01L21/0276 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/67069

Abstract: A plasma etching method for plasma etching, in a processing chamber, an antireflection film laminated on an organic film formed on a substrate by using an etching mask made of a resist film formed on the antireflection film, the plasma etching method includes: depositing a Si-containing compound on the etching mask made of the resist film by using plasma of Si-containing gas in the processing chamber; and etching the antireflection film in a state where the Si-containing compound is deposited on the etching mask.

Abstract translation: 一种用于等离子体蚀刻的等离子体蚀刻方法，在处理室中，通过使用由形成在防反射膜上的抗蚀剂膜制成的蚀刻掩模层叠在形成于基板上的有机膜上的抗反射膜，所述等离子体蚀刻方法包括： 通过在处理室中使用含Si气体的等离子体，在由抗蚀剂膜制成的蚀刻掩模上形成化合物; 并且在含有Si的化合物沉积在蚀刻掩模上的状态下蚀刻抗反射膜。

公开(公告)号：US09087676B2

公开(公告)日：2015-07-21

申请号：US14154385

申请日：2014-01-14

Applicant: Tokyo Electron Limited

Inventor： Takayuki Katsunuma ,  Masanobu Honda ,  Hironobu Ichikawa

IPC: C03C15/00 ,  H01J37/32

CPC classification number: H01J37/32091 ,  H01J37/32477

Abstract: A plasma processing method includes forming a silicon oxide film on a surface of a member provided within a chamber with plasma of a silicon-containing gas without oxygen while controlling a temperature of the member to be lower than a temperature of another member; performing a plasma process on a target object loaded into the chamber with plasma of a processing gas after the silicon oxide film is formed on the surface of the member; and removing the silicon oxide film from the surface of the member with plasma of a fluorine-containing gas after the target object on which the plasma process is performed is unloaded to an outside of the chamber.

Abstract translation: 等离子体处理方法包括在设置在室内的构件的表面上形成氧化硅膜，其中含有含硅气体的等离子体不含氧，同时将该构件的温度控制在低于另一构件的温度; 在所述构件的表面上形成所述氧化硅膜之后，利用处理气体的等离子体对装载到所述室中的目标物体进行等离子体处理; 并且在执行等离子体处理的目标物体之后，用含氟气体的等离子体从构件的表面去除氧化硅膜被卸载到室外。

公开(公告)号：US20140273486A1

公开(公告)日：2014-09-18

申请号：US14353451

申请日：2012-10-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takayuki Katsunuma ,  Masanobu Honda ,  Kazuhiro Kubota ,  Hironobu Ichikawa

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32082 ,  H01J37/32642 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/6833 ,  H01L21/76811 ,  H01L21/76813

Abstract: A method of manufacturing a semiconductor device including a wafer using a plasma etching device which includes a chamber, a chuck provided in the chamber to dispose a wafer to be processed thereon, a focus ring disposed at a peripheral edge portion of the chuck, and a gas supplying mechanism configured to supply various types of gases depending a radial position of the wafer. The method includes: placing a wafer formed with an organic film on the chuck; introducing an etching gas which etches the organic film on the wafer from the process gas supplying mechanism to a central portion of the wafer; introducing an etching inhibiting factor gas having a property of reacting with the etching gas to the peripheral edge portion of the wafer from the gas supplying mechanism; and performing plasma etching on the wafer using the etching gas.

Abstract translation: 一种制造半导体器件的方法，该半导体器件包括使用等离子体蚀刻装置的晶片，该等离子体蚀刻装置包括：室，设置在该腔室中的卡盘，以设置待处理的晶片;设置在卡盘的周缘部分的聚焦环， 气体供给机构，被配置为根据晶片的径向位置供应各种类型的气体。 该方法包括：将形成有有机膜的晶片放置在卡盘上; 引入蚀刻气体，其将晶片上的有机膜从处理气体供给机构蚀刻到晶片的中心部分; 将具有与蚀刻气体反应的性质的蚀刻抑制因子气体从气体供给机构引入到晶片的周缘部; 并使用蚀刻气体在晶片上进行等离子体蚀刻。