公开(公告)号：US10026631B2

公开(公告)日：2018-07-17

申请号：US15428313

申请日：2017-02-09

Applicant: Tokyo Electron Limited

Inventor： Kaoru Oohashi

IPC: H01L21/67 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/683 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/66 ,  H02N13/00

Abstract: A plasma processing apparatus is provided that converts a gas into plasma using a high frequency power and performs a plasma process on a workpiece using an action of the plasma. The plasma processing apparatus includes a processing chamber that can be depressurized, a mounting table that is arranged within the processing chamber and holds the workpiece, an electrostatic chuck that is arranged on the mounting table and electrostatically attracts the workpiece by applying a voltage to a chuck electrode, a heater arranged within or near the electrostatic chuck, and a temperature control unit. The heater is divided into a circular center zone, at least two middle zones arranged concentrically at an outer periphery side of the center zone, and an edge zone arranged concentrically at an outermost periphery. The temperature control unit adjusts a control temperature of the heater with respect to each of the zones.

公开(公告)号：US11569073B2

公开(公告)日：2023-01-31

申请号：US16110201

申请日：2018-08-23

Applicant: Tokyo Electron Limited

Inventor： Jun Hirose ,  Kaoru Oohashi

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/687 ,  H01L21/67

Abstract: An assembly provided with a coolant flow channel includes a base in which the coolant flow channel is formed; and a protrusion component that is disposed in the coolant flow channel, wherein the protrusion component is liftable or rotatable.

公开(公告)号：US09412635B2

公开(公告)日：2016-08-09

申请号：US14374536

申请日：2013-02-06

Applicant: Tokyo Electron Limited ,  Sumitomo Osaka Cement Co., Ltd.

Inventor： Yasuharu Sasaki ,  Kaoru Oohashi ,  Tomoyuki Takahashi ,  Tadashi Aoto ,  Mamoru Kosakai ,  Shinichi Maeta ,  Yukio Miura ,  Takashi Sato ,  Kei Furuuchi

IPC: H01T23/00 ,  H01L21/683 ,  B23Q3/15 ,  H01L21/67

CPC classification number: H01L21/6833 ,  B23Q3/15 ,  H01L21/67109 ,  H01L21/6831

Abstract: An electrostatic chuck device includes an electrostatic chuck part that has an upper surface as a placement surface for placing a plate-shaped sample and has an internal electrode for electrostatic attraction built therein; and a cooling base part that cools the electrostatic chuck part. The electrostatic chuck part and the cooling base part are integrally adhered to each other via an adhesive layer. An insulator having a double pipe structure including an insulator and an insulator provided coaxially with an outer peripheral portion of the insulator is provided in a cooling gas hole, formed in the electrostatic chuck part and the cooling base part, so as to cover an exposed surface of the adhesive layer on the cooling gas hole side.

Abstract translation: 静电吸盘装置包括具有作为放置板状样品的放置面的上表面并具有内置静电吸引用内部电极的静电吸盘部， 以及冷却静电卡盘部的冷却基部。 静电吸盘部和冷却基部通过粘合层一体地粘接。 具有双管结构的绝缘体包括绝缘体和与绝缘体的外周部同轴设置的绝缘体，设置在形成在静电卡盘部和冷却基部中的冷却气体孔中，以覆盖暴露表面 的冷却气体孔侧的粘合剂层。

公开(公告)号：US20140376148A1

公开(公告)日：2014-12-25

申请号：US14374536

申请日：2013-02-06

Applicant: Tokyo Electron Limited ,  Sumitomo Osaka Cement Co., Ltd.

Inventor： Yasuharu Sasaki ,  Kaoru Oohashi ,  Tomoyuki Takahashi ,  Tadashi Aoto ,  Mamoru Kosakai ,  Shinichi Maeta ,  Yukio Miura ,  Takashi Sato ,  Kei Furuuchi

IPC: H01L21/683

CPC classification number: H01L21/6833 ,  B23Q3/15 ,  H01L21/67109 ,  H01L21/6831

Abstract: An electrostatic chuck device includes an electrostatic chuck part that has an upper surface as a placement surface for placing a plate-shaped sample and has an internal electrode for electrostatic attraction built therein; and a cooling base part that cools the electrostatic chuck part. The electrostatic chuck part and the cooling base part are integrally adhered to each other via an adhesive layer. An insulator having a double pipe structure including an insulator and an insulator provided coaxially with an outer peripheral portion of the insulator is provided in a cooling gas hole, formed in the electrostatic chuck part and the cooling base part, so as to cover an exposed surface of the adhesive layer on the cooling gas hole side.

Abstract translation: 静电吸盘装置包括具有作为放置板状样品的放置面的上表面并具有内置静电吸引用内部电极的静电吸盘部， 以及冷却静电卡盘部的冷却基部。 静电吸盘部和冷却基部通过粘合层一体地粘接。 具有双管结构的绝缘体包括绝缘体和与绝缘体的外周部同轴设置的绝缘体，设置在形成在静电卡盘部和冷却基部中的冷却气体孔中，以覆盖暴露表面 的冷却气体孔侧的粘合剂层。

公开(公告)号：US20150132863A1

公开(公告)日：2015-05-14

申请号：US14368548

申请日：2013-01-09

Applicant: Tokyo Electron Limited

Inventor： Kaoru Oohashi

IPC: H01L21/67 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/66

CPC classification number: H01L21/67248 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32642 ,  H01J37/32724 ,  H01J37/32935 ,  H01J2237/2001 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/6833 ,  H01L22/26 ,  H02N13/00

Abstract: A plasma processing apparatus is provided that converts a gas into plasma using a high frequency power and performs a plasma process on a workpiece using an action of the plasma. The plasma processing apparatus includes a processing chamber that can be depressurized, a mounting table that is arranged within the processing chamber and holds the workpiece, an electrostatic chuck that is arranged on the mounting table and electrostatically attracts the workpiece by applying a voltage to a chuck electrode, a heater arranged within or near the electrostatic chuck, and a temperature control unit. The heater is divided into a circular center zone, at least two middle zones arranged concentrically at an outer periphery side of the center zone, and an edge zone arranged concentrically at an outermost periphery. The temperature control unit adjusts a control temperature of the heater with respect to each of the zones.

Abstract translation: 提供一种等离子体处理装置，其使用高频功率将气体转换成等离子体，并使用等离子体的作用对工件执行等离子体处理。 等离子体处理装置包括可以减压的处理室，布置在处理室内并保持工件的安装台，布置在安装台上的静电卡盘，并通过向卡盘施加电压而静电吸引工件 电极，布置在静电卡盘内或附近的加热器，以及温度控制单元。 加热器被分为圆形中心区域，同心地布置在中心区域的外周侧的至少两个中间区域和同心地布置在最外周边的边缘区域。 温度控制单元相对于每个区域调节加热器的控制温度。

公开(公告)号：US09728381B2

公开(公告)日：2017-08-08

申请号：US14561785

申请日：2014-12-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akihiro Kikuchi ,  Satoshi Kayamori ,  Shinya Shima ,  Yuichiro Sakamoto ,  Kimihiro Higuchi ,  Kaoru Oohashi ,  Takehiro Ueda ,  Munehiro Shibuya ,  Tadashi Gondai

IPC: H01J37/32 ,  C23C16/509 ,  C23C16/455 ,  H01J37/34 ,  H01L21/67

CPC classification number: H01J37/32724 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/32715 ,  H01J37/3411 ,  H01J2237/002 ,  H01J2237/0206 ,  H01J2237/334 ,  H01L21/67069

Abstract: An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of e.g., −400 to −600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

公开(公告)号：US09437402B2

公开(公告)日：2016-09-06

申请号：US14561595

申请日：2014-12-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akihiro Kikuchi ,  Satoshi Kayamori ,  Shinya Shima ,  Yuichiro Sakamoto ,  Kimihiro Higuchi ,  Kaoru Oohashi ,  Takehiro Ueda ,  Munehiro Shibuya ,  Tadashi Gondai

IPC: C23C16/50 ,  C23C16/509 ,  C23C16/455 ,  H01J37/32 ,  H01J37/34 ,  H01L21/67

CPC classification number: H01J37/32724 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/32715 ,  H01J37/3411 ,  H01J2237/002 ,  H01J2237/0206 ,  H01J2237/334 ,  H01L21/67069

Abstract: An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., −400 to −600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

公开(公告)号：US08904957B2

公开(公告)日：2014-12-09

申请号：US13783564

申请日：2013-03-04

Applicant: Tokyo Electron Limited

Inventor： Akihiro Kikuchi ,  Satoshi Kayamori ,  Shinya Shima ,  Yuichiro Sakamoto ,  Kimihiro Higuchi ,  Kaoru Oohashi ,  Takehiro Ueda ,  Munehiro Shibuya ,  Tadashi Gondai

IPC: C23C16/50 ,  C23C16/503 ,  C23C16/505 ,  C23C16/509 ,  C23C16/52 ,  C23F1/00 ,  H01J37/32 ,  H01L21/67 ,  H01J37/34 ,  C23C16/06 ,  C23C16/22

CPC classification number: H01J37/32724 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/32715 ,  H01J37/3411 ,  H01J2237/002 ,  H01J2237/0206 ,  H01J2237/334 ,  H01L21/67069

Abstract: An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., −400 to −600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

Abstract translation: 蚀刻室1包括聚焦环9，以围绕设置在下电极4上的半导体晶片W.等离子体处理器设置有电位控制DC电源33以控制该聚焦环9的电位，以及 这样构成为向下电极4提供例如-400至-600V的DC电压以控制聚焦环9的电位。这种结构防止表面电弧沿着待处理基板的表面发展 。

公开(公告)号：US08869376B2

公开(公告)日：2014-10-28

申请号：US13944948

申请日：2013-07-18

Applicant: Tokyo Electron Limited

Inventor： Takehiro Ueda ,  Yoshiyuki Kobayashi ,  Kaoru Oohashi

IPC: C23C16/00 ,  B32B38/10 ,  H01L21/687 ,  H01L21/683 ,  B32B38/08

CPC classification number: B32B38/08 ,  B32B38/10 ,  H01L21/6831 ,  H01L21/68735 ,  H01L21/68757 ,  Y10T29/49359 ,  Y10T29/494 ,  Y10T29/4998 ,  Y10T29/49982 ,  Y10T279/23

Abstract: A substrate mounting table includes a plate shaped member provided with a mounting surface for mounting a substrate thereon, a plurality of gas injection openings opened on the mounting surface to supply a gas toward the mounting surface, and a gas supply channel for supplying the gas through the gas injection openings; and a thermally sprayed ceramic layer covering the mounting surface. At least inner wall portions of the gas supply channel are formed in curved surface shapes, the inner wall portions facing the gas injection openings.

Abstract translation: 基板安装台包括：板状部件，其设置有用于在其上安装基板的安装表面;多个气体注入开口，其在安装面上开口以朝向安装表面供应气体;以及气体供应通道，用于通过 气体注入口; 以及覆盖安装表面的热喷涂陶瓷层。 气体供给通道的至少内壁部分形成为曲面形状，内壁部分面对气体注入开口。