公开(公告)号：US20190385815A1

公开(公告)日：2019-12-19

申请号：US16431565

申请日：2019-06-04

Applicant: Tokyo Electron Limited

Inventor： Shinya IWASHITA ,  Ayuta SUZUKI ,  Takahiro SHINDO ,  Kazuki DEMPOH ,  Tatsuo MATSUDO ,  Yasushi MORITA ,  Takamichi KIKUCHI ,  Tsuyoshi MORIYA

IPC: H01J37/32 ,  H01L21/67

Abstract: A film forming apparatus includes a vacuum-evacuable processing chamber, a lower electrode for mounting thereon a target substrate, an upper electrode disposed to face the lower electrode, a gas supply unit, a voltage application unit and a switching unit. The gas supply unit supplies a film forming source gas to be formed into plasma to a processing space between the upper and the lower electrode. The voltage application unit applies to the upper electrode a voltage outputted from at least one of a high frequency power supply and a DC power supply included therein. The switching unit selectively switches the voltage to be applied to the upper electrode among a high frequency voltage outputted from the high frequency power supply, a DC voltage outputted from the DC power supply, and a superimposed voltage in which the DC voltage is superimposed with the high frequency voltage.

公开(公告)号：US20230035284A1

公开(公告)日：2023-02-02

申请号：US17906353

申请日：2021-03-02

Applicant: Tokyo Electron Limited

Inventor： Kazuki DEMPOH

IPC: C23C16/02 ,  C23C16/04 ,  C23C16/455 ,  C23C16/507 ,  H01L21/285

Abstract: A film formation method according to one aspect of the present disclosure includes: a first step of irradiating a substrate, on which a recess is formed, with an electron beam; a second step of supplying a raw material gas to the substrate and allowing the raw material gas to be adsorbed on a bottom surface of the recess; and a third step of supplying hydrogen radicals to the substrate and allowing the raw material gas adsorbed on the bottom surface of the recess to react with the hydrogen radicals.

公开(公告)号：US20230124029A1

公开(公告)日：2023-04-20

申请号：US17938335

申请日：2022-10-06

Applicant: Tokyo Electron Limited

Inventor： Kazuki DEMPOH ,  Daeho KIM ,  Atsushi MATSUMOTO ,  Hideaki YAMASAKI

IPC: C23C16/44 ,  C23C16/08

Abstract: A particle suppression method includes a) supplying a first processing gas containing a halogen element and a metal element into a chamber in which a substrate is accommodated and plasmatizing the first processing gas to form a film containing the metal element on the substrate, b) reducing a surface of a deposit formed on an inner wall of the chamber by supplying a second processing gas including hydrogen gas into the chamber and turning the second processing gas into plasma, and c) nitriding the reduced surface of the deposit by supplying a third processing gas containing a nitrogen element into the chamber.

公开(公告)号：US20230051432A1

公开(公告)日：2023-02-16

申请号：US17974193

申请日：2022-10-26

Applicant: Tokyo Electron Limited

Inventor： Shinya IWASHITA ,  Ayuta SUZUKI ,  Takahiro SHINDO ,  Kazuki DEMPOH ,  Tatsuo MATSUDO ,  Yasushi MORITA ,  Takamichi KIKUCHI ,  Tsuyoshi MORIYA

IPC: H01J37/32 ,  H01L21/67

Abstract: A film forming apparatus includes a vacuum-evacuable processing chamber, a lower electrode for mounting thereon a target substrate, an upper electrode disposed to face the lower electrode, a gas supply unit, a voltage application unit and a switching unit. The gas supply unit supplies a film forming source gas to be formed into plasma to a processing space between the upper and the lower electrode. The voltage application unit applies to the upper electrode a voltage outputted from at least one of a high frequency power supply and a DC power supply included therein. The switching unit selectively switches the voltage to be applied to the upper electrode among a high frequency voltage outputted from the high frequency power supply, a DC voltage outputted from the DC power supply, and a superimposed voltage in which the DC voltage is superimposed with the high frequency voltage.

公开(公告)号：US20180327904A1

公开(公告)日：2018-11-15

申请号：US15973331

申请日：2018-05-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuki DEMPOH

IPC: C23C16/455 ,  C23C16/509

CPC classification number: C23C16/45591 ,  C23C16/5096

Abstract: A film forming apparatus includes a mounting table on which a substrate is mounted; a ceiling plate facing the mounting table, the ceiling plate defining a processing space between the ceiling plate and mounting table; and a gas supply mechanism configured to supply a source gas to the processing space horizontally with respect to the substrate. A facing surface of the ceiling plate or a facing surface of the mounting table is inclined such that a gap between the facing surfaces of the mounting table and the ceiling plate becomes wider at a downstream side than at an upstream side in a flow direction of the source gas.

公开(公告)号：US20180047541A1

公开(公告)日：2018-02-15

申请号：US15671906

申请日：2017-08-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shinya OKABE ,  Takashi MOCHIZUKI ,  Hideaki YAMASAKI ,  Nagayasu HIRAMATSU ,  Kazuki DEMPOH

IPC: H01J37/32 ,  C23C16/06 ,  C23C16/46 ,  C23C16/458 ,  H01L21/285 ,  C23C16/50

CPC classification number: H01J37/3244 ,  C23C16/045 ,  C23C16/06 ,  C23C16/14 ,  C23C16/34 ,  C23C16/45565 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/5096 ,  C23C16/56 ,  H01J37/32724 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/76843 ,  H01L21/76856

Abstract: A film forming apparatus, for forming a film on a target substrate using a processing gas excited by plasma, includes: a processing chamber for accommodating the substrate; a mounting table for mounting thereon the substrate in the processing chamber; a gas injection member provided to face the substrate mounted on the mounting table and configured to inject the processing gas toward the target substrate on the mounting table; and a plasma generation unit for exciting the processing gas by generating plasma between the gas injection member and the mounting table. The gas injection member has a gas injection surface facing the mounting table. Gas injection holes are formed in the gas injection surface. A gas injection hole forming region, on the gas injection surface, where the gas injection holes are formed is smaller than a region on the gas injection surface which corresponds to the target substrate.