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公开(公告)号：US20190088475A1
公开(公告)日：2019-03-21
申请号：US16132729
申请日：2018-09-17
IPC分类号： H01L21/02 , C23C16/40 , C23C16/455 , C23C16/26
摘要： Disclosed is a film forming method including forming a metal oxide film on a base film by alternately supplying a metal-containing gas and a plasmatized oxidizing gas. The metal-containing gas is changed from a first metal-containing gas having no halogen to a second metal-containing gas different from the first metal-containing gas during the film forming of the metal oxide film.
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公开(公告)号：US20180155830A1
公开(公告)日：2018-06-07
申请号：US15833889
申请日：2017-12-06
发明人： Ayuta SUZUKI , Kosuke Yamamoto , Kazuyoshi Matsuzaki , Munehito Kagaya , Tsuyoshi Moriya , Tadashi Mitsunari
IPC分类号： C23C16/44 , C23C16/455
CPC分类号： C23C16/4412 , C23C16/45508 , C23C16/45517 , C23C16/45561
摘要： A gas supply and exhaust structure, for supplying and exhausting a raw material gas into and from a chamber having a substrate mounting surface at a position corresponding to a central portion of an inner top surface, includes a side gas supply unit having gas supply ports arranged circumferentially and vertically on an inner side surface of the chamber and configured to supply the raw material gas through the gas supply ports toward a central axis of the chamber, and an exhaust unit having a gas exhaust port formed at the central portion of the inner top surface of the chamber and configured to exhaust the raw material gas. The inner top surface has an inclined surface inclined such that a distance between the inner top surface and an inner bottom surface of the chamber becomes smaller from the inner side surface toward the central axis.
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3.发明申请METHOD FOR CALCULATING BILL FOR USE OF WATER PURIFICATION SYSTEM AND WATER PURIFICATION SYSTEM 审中-公开用于水净化系统和水净化系统的计算方法公开(公告)号：US20130226752A1
公开(公告)日：2013-08-29
申请号：US13861657
申请日：2013-04-12
IPC分类号： G06Q30/04
CPC分类号： G06Q30/04 , B01D61/12 , C02F1/008 , G06Q20/145 , G06Q30/0207 , G06Q50/06 , G07F13/025 , G07F15/12 , G07F17/0021 , Y02A20/16
摘要： To provide a billing method for use of a water purification system that gives incentives for using the water purification system. Such a water purification system is equipped with water purification apparatus having controller and with monitoring server connected to water purification apparatus via public network and having controller. Filtration filter of water purification apparatus has water quality sensor, which measures water quality data of inflow water, and water quality sensor, which measures water quality data of purified water. Water quality data measured by water quality sensors are transmitted to controller and controller. Usage fees for the water purification system are calculated corresponding to improvement rates of water quality, which are calculated based on water quality data of inflow water and water quality data of purified water.
摘要翻译： 提供使用水净化系统的计费方法，其给予使用水净化系统的激励。 这种水净化系统配备有具有控制器的净水装置，监控服务器通过公共网络连接到净水装置并具有控制器。 水净化装置过滤器具有水质传感器，用于测量入水水质数据，水质传感器，用于测量净水水质数据。 由水质传感器测量的水质数据传输给控制器和控制器。 水净化系统的使用费用是根据水质改善率计算的，这是根据流入水质量数据和纯净水水质数据计算出来的。
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公开(公告)号：US12020900B2
公开(公告)日：2024-06-25
申请号：US17440613
申请日：2020-03-13
发明人： Munehito Kagaya , Satoru Kawakami , Tsuyoshi Moriya , Tatsuo Matsudo , Jun Yamawaku , Hiroyuki Onoda
CPC分类号： H01J37/32174 , H01J37/3244 , H01J37/32715 , H01L21/0217 , H01L21/02274 , H01L21/0228
摘要： There is provided a plasma processing device. The plasma processing device comprises: a processing chamber; a partition plate that has an insulating property, and configured to partition a space in the processing chamber into a reaction chamber in which an object to be processed is mounted and a plasma generating chamber in which plasma is generated, wherein a first electrode is provided on a surface of the partition plate on the side of the plasma generating chamber, and the partition plate has a plurality of through holes formed for supplying active species contained in the plasma generated in the plasma generating chamber to the reaction chamber; a second electrode disposed in the plasma generating chamber so as to face the first electrode; and a power supply configured to supply high-frequency power obtained by phase-controlling and superimposing high-frequency powers of a plurality of frequencies to one of the first electrode and the second electrode when the plasma is generated in the plasma generating chamber.
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公开(公告)号：US20230386801A1
公开(公告)日：2023-11-30
申请号：US18251077
申请日：2021-10-19
发明人： Tsuyoshi Moriya , Haruhiko Himura
IPC分类号： H01J37/32
CPC分类号： H01J37/32697 , H01J37/32422 , H01J2237/1207 , H01J2237/04735 , H01J37/3266
摘要： A plasma processing apparatus includes a processing vessel in which a substrate as a target of a plasma processing is disposed; a plasma forming device configured to form plasma within the processing vessel; a focusing device disposed within the processing vessel, and configured to focus multiple ions in the plasma to output an ion beam; and a sorting device configured to sort out, from the ion beam outputted from the focusing device, a specific ion to be supplied to the substrate.
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公开(公告)号：US20130092185A1
公开(公告)日：2013-04-18
申请号：US13690826
申请日：2012-11-30
CPC分类号： B08B7/04 , B08B5/04 , B08B6/00 , B08B7/0035 , C23C16/4401 , C23C16/4412
摘要： A vacuum exhaust method of a substrate processing apparatus, after opening to the atmosphere, depressurizes a vacuum processing chamber having therein a mounting table for mounting a target substrate thereon. The vacuum exhaust method includes covering a surface of the mounting table with a protection member; sealing the vacuum processing chamber; vacuum evacuating the sealed vacuum processing chamber; and adsorbing at least one of foreign substances and out-gases by the protection member.
摘要翻译： 基板处理装置的真空排气方法在向大气开放之后，对其中具有用于在其上安装目标基板的安装台的真空处理室进行减压。 真空排气方法包括用保护构件覆盖安装台的表面; 密封真空处理室; 真空抽真空处理室; 并且通过所述保护构件吸附至少一种异物和外部气体。
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公开(公告)号：US11450512B2
公开(公告)日：2022-09-20
申请号：US16754402
申请日：2018-09-26
摘要： A plasma processing method according to an embodiment is performed in a state in which a substrate is placed on a support stage in an internal space of a chamber body. In the plasma processing method, a plasma treatment is performed on the substrate. Subsequently, a phase of a voltage of a lower electrode is relatively adjusted with respect to a phase of a voltage of an upper electrode by a phase adjustment circuit, such that a thickness of a sheath between the support stage and plasma without extinguishing the plasma generated in order to perform the plasma treatment. Thereafter, in a state in which supply of a high-frequency power is stopped, gases and particles in the internal space of the chamber body are discharged using an exhaust device.
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公开(公告)号：US20150246317A1
公开(公告)日：2015-09-03
申请号：US14427650
申请日：2013-09-11
CPC分类号： B01D67/0034 , B01D61/08 , B01D63/081 , B01D63/087 , B01D63/088 , B01D69/06 , B01D69/10 , B01D2313/08 , B01D2323/24
摘要： Provided is a method for producing a filtration filter capable of purifying with high accuracy and largely improving filtration efficiency. A flow path forming film is formed on a substrate. A plurality of grooves is formed on the flow path forming film along a surface of the substrate by etching. The grooves are filled with a sacrificial film. The flow path forming film and the sacrificial film are planarized by polishing the sacrificial film. A flow path sealing film is formed on the planarized flow path forming film and sacrificial film. An inlet hole and an outlet hole are formed through the substrate and the flow path sealing film, respectively, so that parts of the sacrificial film are exposed through the inlet hole and the outlet hole. The sacrificial film is removed using the inlet hole and the outlet hole and the filtration flow paths are formed by the grooves.
摘要翻译： 提供一种能够高精度地净化并大大提高过滤效率的过滤器的制造方法。 在基板上形成流路形成膜。 通过蚀刻沿着基板的表面在流路形成膜上形成多个凹槽。 凹槽填充有牺牲膜。 通过抛光牺牲膜来平坦化流路形成膜和牺牲膜。 在平坦化流路形成膜和牺牲膜上形成流路密封膜。 分别通过基板和流路密封膜形成入口孔和出口孔，使得牺牲膜的一部分通过入口孔和出口孔露出。 使用入口孔和出口孔去除牺牲膜，并且通过凹槽形成过滤流路。
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公开(公告)号：US20150206763A1
公开(公告)日：2015-07-23
申请号：US14596619
申请日：2015-01-14
IPC分类号： H01L21/311 , H01L21/3213
CPC分类号： C23C16/4404 , B29C59/14 , H01J37/32467 , H01J37/32477 , H01J37/32623 , H01J37/32642 , H01L21/3065 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/67069 , H01L21/68757 , Y10S156/915
摘要： Etching is performed through the following process. A substrate is loaded into a processing chamber and mounted on a mounting table therein. Then, in the state where a ring member at least a surface of which is made of a same material as a main component of an etching target film is provided to surround the substrate, a processing gas is injected in a shower-like manner from a gas supply unit oppositely facing the substrate and the etching target film is etched by using a plasma of the processing gas; and evacuating the inside of the processing chamber through an exhaust path. Through this process, unbalanced distribution of plasma active species in the vicinity of a circumferential edge portion of the substrate can be suppressed.
摘要翻译： 蚀刻通过以下过程进行。 将基板装载到处理室中并安装在其中的安装台上。 然后，在以与蚀刻对象膜的主要成分相同的材料形成的环构件设置为包围基板的状态下，将处理气体从沐浴状注入到 通过使用处理气体的等离子体来蚀刻与基板相对的气体供给单元和蚀刻目标膜， 并且通过排气路径排出处理室的内部。 通过该处理，可以抑制基板的周缘部附近的等离子体活性物质的不平衡分布。
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公开(公告)号：US08945313B2
公开(公告)日：2015-02-03
申请号：US13690826
申请日：2012-11-30
CPC分类号： B08B7/04 , B08B5/04 , B08B6/00 , B08B7/0035 , C23C16/4401 , C23C16/4412
摘要： A vacuum exhaust method of a substrate processing apparatus, after opening to the atmosphere, depressurizes a vacuum processing chamber having therein a mounting table for mounting a target substrate thereon. The vacuum exhaust method includes covering a surface of the mounting table with a protection member; sealing the vacuum processing chamber; vacuum evacuating the sealed vacuum processing chamber; and adsorbing at least one of foreign substances and out-gases by the protection member.
摘要翻译： 基板处理装置的真空排气方法在向大气开放之后，对其中具有用于在其上安装目标基板的安装台的真空处理室进行减压。 真空排气方法包括用保护构件覆盖安装台的表面; 密封真空处理室; 真空抽真空处理室; 并且通过所述保护构件吸附至少一种异物和外部气体。
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