公开(公告)号：US12027344B2

公开(公告)日：2024-07-02

申请号：US17974193

申请日：2022-10-26

Applicant: Tokyo Electron Limited

Inventor： Shinya Iwashita ,  Ayuta Suzuki ,  Takahiro Shindo ,  Kazuki Dempoh ,  Tatsuo Matsudo ,  Yasushi Morita ,  Takamichi Kikuchi ,  Tsuyoshi Moriya

IPC: C23C16/00 ,  H01J37/32 ,  H01L21/00 ,  H01L21/67

CPC classification number: H01J37/32027 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32568 ,  H01L21/67253 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/334

Abstract: A film forming apparatus includes a vacuum-evacuable processing chamber, a lower electrode for mounting thereon a target substrate, an upper electrode disposed to face the lower electrode, a gas supply unit, a voltage application unit and a switching unit. The gas supply unit supplies a film forming source gas to be formed into plasma to a processing space between the upper and the lower electrode. The voltage application unit applies to the upper electrode a voltage outputted from at least one of a high frequency power supply and a DC power supply included therein. The switching unit selectively switches the voltage to be applied to the upper electrode among a high frequency voltage outputted from the high frequency power supply, a DC voltage outputted from the DC power supply, and a superimposed voltage in which the DC voltage is superimposed with the high frequency voltage.

公开(公告)号：US12211676B2

公开(公告)日：2025-01-28

申请号：US17760182

申请日：2021-01-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ayuta Suzuki ,  Hidefumi Matsui ,  Atsushi Kubo

IPC: H01J37/32 ,  G01J5/00

Abstract: A measurement system including an imaging device and a plasma processing device having a plasma generator configured to generate plasma from a gas supplied into a processing chamber and a controller. The imaging device is configured to generate optical information of the plasma from image data of imaged plasma in the processing chamber, and the controller is configured to convert the generated optical information of the plasma into a plasma parameter that determines physical characteristics of the plasma with reference to a storage that stores correlation information between the optical information of the plasma and measurement results of the plasma parameter.

公开(公告)号：US20150206763A1

公开(公告)日：2015-07-23

申请号：US14596619

申请日：2015-01-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ayuta Suzuki ,  Songyun Kang ,  Tsuyoshi Moriya ,  Nobutoshi Terasawa ,  Yoshiaki Okabe

IPC: H01L21/311 ,  H01L21/3213

CPC classification number: C23C16/4404 ,  B29C59/14 ,  H01J37/32467 ,  H01J37/32477 ,  H01J37/32623 ,  H01J37/32642 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67069 ,  H01L21/68757 ,  Y10S156/915

Abstract: Etching is performed through the following process. A substrate is loaded into a processing chamber and mounted on a mounting table therein. Then, in the state where a ring member at least a surface of which is made of a same material as a main component of an etching target film is provided to surround the substrate, a processing gas is injected in a shower-like manner from a gas supply unit oppositely facing the substrate and the etching target film is etched by using a plasma of the processing gas; and evacuating the inside of the processing chamber through an exhaust path. Through this process, unbalanced distribution of plasma active species in the vicinity of a circumferential edge portion of the substrate can be suppressed.

Abstract translation: 蚀刻通过以下过程进行。 将基板装载到处理室中并安装在其中的安装台上。 然后，在以与蚀刻对象膜的主要成分相同的材料形成的环构件设置为包围基板的状态下，将处理气体从沐浴状注入到 通过使用处理气体的等离子体来蚀刻与基板相对的气体供给单元和蚀刻目标膜， 并且通过排气路径排出处理室的内部。 通过该处理，可以抑制基板的周缘部附近的等离子体活性物质的不平衡分布。

公开(公告)号：US11664198B2

公开(公告)日：2023-05-30

申请号：US16831032

申请日：2020-03-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hirofumi Ohta ,  Hidetoshi Hanaoka ,  Ayuta Suzuki

IPC: H01J37/32 ,  H01L21/68

CPC classification number: H01J37/32642 ,  H01J37/32559 ,  H01J37/32715 ,  H01J2237/038

Abstract: A plasma processing apparatus includes a conductive mounting table, a conductive member, and a first insulating member. The conductive mounting table has a mounting portion on which a substrate is mounted and a stepped portion positioned lower than the mounting portion. The conductive member is disposed on the stepped portion and extends outward over an outer periphery of the mounting table. Further, a first insulating member is disposed on or above an upper surface of the conductive member.

公开(公告)号：US10734221B2

公开(公告)日：2020-08-04

申请号：US16028656

申请日：2018-07-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taiki Kato ,  Hisashi Higuchi ,  Kosuke Yamamoto ,  Ayuta Suzuki ,  Kazuyoshi Matsuzaki ,  Yuji Seshimo ,  Susumu Takada ,  Yoshihiro Takezawa

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/51 ,  H01L29/423 ,  C23C16/455 ,  C23C16/04 ,  C23C16/40 ,  H01L21/28 ,  H01L49/02 ,  H01L21/443

Abstract: A method of manufacturing a semiconductor device having a metal oxide film with workpiece accommodated in a chamber, includes: supplying a precursor gas containing a metal complex into the chamber to form a precursor layer on the workpiece from the precursor gas; supplying an oxidizing gas into the chamber to oxidize the precursor layer so that a metal oxide layer is formed, the oxidizing gas being a gas containing H2O or a gas having a functional group containing hydrogen atoms in the metal complex and containing an oxidant to generate H2O by reaction with the functional group; supplying an H2O removal gas containing alcohols or amines into the chamber to remove H2O adsorbed onto the metal oxide layer; and executing a plurality of cycles each including the supplying a precursor gas and the supplying an oxidizing gas. At least some of the cycles includes the supplying an H2O removal gas.

公开(公告)号：US20200176226A1

公开(公告)日：2020-06-04

申请号：US16699953

申请日：2019-12-02

Applicant: Tokyo Electron Limited

Inventor： Toshiya Tsukahara ,  Shuhei Yamabe ,  Kota Yachi ,  Tetsuji Sato ,  Yohei Uchida ,  Ayuta Suzuki ,  Yosuke Tamura ,  Hidetoshi Hanaoka ,  Junichi Sasaki

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a processing vessel, a lower electrode, an annular member, an inner upper electrode, an outer upper electrode, a processing gas supply, a first high frequency power supply and a first DC power supply. The lower electrode is configured to place a processing target substrate. The annular member is disposed on an outer peripheral portion of the lower electrode. The inner upper electrode is disposed to face the lower electrode. The outer upper electrode is disposed at an outside of the inner upper electrode. The first high frequency power supply applies a first high frequency power. The first DC power supply applies a first variable DC voltage to the outer upper electrode. At least a part of a surface of the outer upper electrode exposed to the processing space is located higher than a surface of the inner upper electrode exposed to the processing space.

公开(公告)号：US10121680B2

公开(公告)日：2018-11-06

申请号：US15831811

申请日：2017-12-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Munehito Kagaya ,  Ayuta Suzuki ,  Kosuke Yamamoto ,  Tsuyoshi Moriya ,  Kazuyoshi Matsuzaki

IPC: H01L21/67 ,  C23C16/455

Abstract: In a substrate processing apparatus, a mounting table and a gas supply part are provided in a processing container to face each other. The processing gas introduced from introduction ports formed in the gas supply part on the opposite side of the gas supply part from the mounting table is supplied to the substrate from gas supply holes formed in an end portion of the gas supply part on the side of the mounting table. The gas supply part includes a central region and one or more outer peripheral regions surrounding the central region. The gas supply holes and the introduction ports are provided for each of the central region and the outer peripheral regions. The processing gas whose gas supply conditions are adjusted for each of the regions is continuously and outwardly supplied in a circumferential direction around the center axis from the introduction ports.

公开(公告)号：US09441292B2

公开(公告)日：2016-09-13

申请号：US14596619

申请日：2015-01-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ayuta Suzuki ,  Songyun Kang ,  Tsuyoshi Moriya ,  Nobutoshi Terasawa ,  Yoshiaki Okabe

IPC: C23C16/44 ,  H01J37/32 ,  H01L21/67 ,  H01L21/687 ,  H01L21/3065 ,  B29C59/14 ,  H01L21/311 ,  H01L21/3213

CPC classification number: C23C16/4404 ,  B29C59/14 ,  H01J37/32467 ,  H01J37/32477 ,  H01J37/32623 ,  H01J37/32642 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67069 ,  H01L21/68757 ,  Y10S156/915

Abstract: Etching is performed through the following process. A substrate is loaded into a processing chamber and mounted on a mounting table therein. Then, in the state where a ring member at least a surface of which is made of a same material as a main component of an etching target film is provided to surround the substrate, a processing gas is injected in a shower-like manner from a gas supply unit oppositely facing the substrate and the etching target film is etched by using a plasma of the processing gas; and evacuating the inside of the processing chamber through an exhaust path. Through this process, unbalanced distribution of plasma active species in the vicinity of a circumferential edge portion of the substrate can be suppressed.