公开(公告)号：US20170133235A1

公开(公告)日：2017-05-11

申请号：US15129000

申请日：2015-04-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Makoto MURAMATSU ,  Takahiro KITANO ,  Tadatoshi TOMITA ,  Gen YOU ,  Takanori NISHI

IPC: H01L21/308 ,  H01L21/027 ,  G03F7/09 ,  G03F7/40 ,  G03F7/20 ,  G03F7/38 ,  G03F7/30 ,  H01L21/306 ,  G03F7/16

CPC classification number: H01L21/3086 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/091 ,  G03F7/16 ,  G03F7/168 ,  G03F7/20 ,  G03F7/30 ,  G03F7/38 ,  G03F7/40 ,  H01L21/0271 ,  H01L21/0276 ,  H01L21/30604 ,  Y10S977/887 ,  Y10S977/943

Abstract: A substrate treatment method includes: forming a plurality of circular patterns of a resist film on a substrate; thereafter applying a first block copolymer; then phase-separating the first block copolymer into a hydrophilic polymer and a hydrophobic polymer; thereafter selectively removing the hydrophilic polymer; then selectively removing the resist film from a top of the substrate; thereafter applying a second block copolymer to the substrate; then phase-separating the second block copolymer into a hydrophilic polymer and a hydrophobic polymer; and thereafter selectively removing the hydrophilic polymer from the phase-separated second block copolymer. A ratio of a molecular weight of the hydrophilic polymer in the first block copolymer and the second block copolymer is 20% to 40%.

公开(公告)号：US20190341255A1

公开(公告)日：2019-11-07

申请号：US16516344

申请日：2019-07-19

Applicant: Tokyo Electron Limited

Inventor： Makoto MURAMATSU ,  Tadatoshi TOMITA ,  Hisashi GENJIMA ,  Gen YOU ,  Takahiro KITANO

IPC: H01L21/033 ,  H01L21/67 ,  H01J37/32 ,  G03F7/00 ,  H01L29/66 ,  D06M14/18 ,  H01L21/02 ,  H01L29/51 ,  H01L21/31 ,  H01L21/027 ,  G03F7/40 ,  G03D5/00 ,  C08J7/18

Abstract: A substrate treatment method of treating a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer, includes: a resist pattern formation step of forming a predetermined resist pattern by a resist film on the substrate; a thin film formation step of forming a thin film for suppressing deformation of the resist pattern on a surface of the resist pattern; a block copolymer coating step of applying a block copolymer to the substrate after the formation of the thin film; and a polymer separation step of phase-separating the block copolymer into the hydrophilic polymer and the hydrophobic polymer.

公开(公告)号：US20160293403A1

公开(公告)日：2016-10-06

申请号：US14388887

申请日：2013-11-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Makoto MURAMATSU ,  Takahiro KITANO ,  Tadatoshi TOMITA ,  Keiji TANOUCHI

IPC: H01L21/027 ,  H01L21/67 ,  H01L21/687 ,  H01L21/02

CPC classification number: H01L21/0271 ,  H01L21/02118 ,  H01L21/02337 ,  H01L21/31138 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/68742

Abstract: The present invention, when forming a pattern on a substrate, forms a film of a block copolymer containing at least two polymers on the substrate, heats the film of the block copolymer under a solvent vapor atmosphere to subject the block copolymer to phase separation, and removes one of the polymers in the film of the phase-separated block copolymer, thereby accelerating fluidization of the polymers of the block copolymer to enable acceleration of the phase separation.

Abstract translation: 本发明当在基片上形成图形时，在基片上形成含有至少两种聚合物的嵌段共聚物的膜，在溶剂蒸汽气氛下加热嵌段共聚物的膜，使嵌段共聚物相分离， 除去相分离嵌段共聚物的膜中的一种聚合物，从而促进嵌段共聚物的聚合物的流化，从而能够加速相分离。

公开(公告)号：US20180269072A1

公开(公告)日：2018-09-20

申请号：US15763529

申请日：2016-10-20

Applicant: Tokyo Electron Limited

Inventor： Makoto MURAMATSU ,  Tadatoshi TOMITA ,  Hisashi GENJIMA ,  Takahiro KITANO

IPC: H01L21/311 ,  H01L21/027 ,  H01L21/67 ,  G03F7/20 ,  G03F7/30 ,  G03F7/16 ,  G03F7/42 ,  G03F7/38

CPC classification number: H01L21/31138 ,  G03F7/16 ,  G03F7/168 ,  G03F7/2002 ,  G03F7/30 ,  G03F7/38 ,  G03F7/422 ,  H01L21/0271 ,  H01L21/0276 ,  H01L21/31133 ,  H01L21/67069 ,  H01L21/6715 ,  H01L21/67167 ,  H01L21/67178 ,  H01L21/67225

Abstract: A substrate processing method of processing a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer, the substrate processing method includes: a block copolymer coating step of applying the block copolymer onto the substrate on which a predetermined projecting and recessed pattern is formed, to form a coating film of the block copolymer; a polymer separation step of phase-separating the block copolymer into the hydrophilic polymer and the hydrophobic polymer; a polymer removal step of selectively removing the hydrophilic polymer from the phase-separated block copolymer; and after the block copolymer coating step and before the polymer removal step, a film thickness reduction step of reducing a film thickness of the coating film of the block copolymer.

公开(公告)号：US20180019118A1

公开(公告)日：2018-01-18

申请号：US15716588

申请日：2017-09-27

Applicant: Tokyo Electron Limited

Inventor： Makoto MURAMATSU ,  Takahiro KITANO ,  Tadatoshi TOMITA ,  Keiji TANOUCHI

IPC: H01L21/027 ,  H01L21/311 ,  H01L21/02 ,  H01L21/687 ,  H01L21/67

CPC classification number: H01L21/0271 ,  H01L21/02118 ,  H01L21/02337 ,  H01L21/31138 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/68742

Abstract: The present invention, when forming a pattern on a substrate, forms a film of a block copolymer containing at least two polymers on the substrate, heats the film of the block copolymer under a solvent vapor atmosphere to subject the block copolymer to phase separation, and removes one of the polymers in the film of the phase-separated block copolymer, thereby accelerating fluidization of the polymers of the block copolymer to enable acceleration of the phase separation.

公开(公告)号：US20180065843A1

公开(公告)日：2018-03-08

申请号：US15554026

申请日：2016-02-10

Applicant: Tokyo Electron Limited

Inventor： Makoto MURAMATSU ,  Tadatoshi TOMITA ,  Hisashi GENJIMA ,  Gen YOU ,  Takahiro KITANO ,  Takanori NISHI

IPC: B81C1/00 ,  H01L21/027 ,  H01L21/033 ,  H01L21/67

CPC classification number: B81C1/00031 ,  B81C1/00428 ,  B81C2201/0149 ,  B82Y40/00 ,  C08F297/00 ,  H01L21/0271 ,  H01L21/0337 ,  H01L21/67178 ,  H01L21/67742

Abstract: A substrate treatment method using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer includes a polymer separating step, wherein a ratio of a molecular weight of the hydrophilic polymer in the block copolymer is adjusted to 20% to 40% so that the hydrophilic polymers align at positions corresponding to a hexagonal close-packed structure in a plan view after the polymer separating step, and at the polymer separating step, a columnar first hydrophilic polymer is phase-separated on each of circular patterns of hydrophobic coating films and a columnar second hydrophilic polymer is phase-separated between the first hydrophilic polymers, and a diameter of the circular pattern is set so that the first hydrophilic polymers and the second hydrophilic polymers align at positions corresponding to the hexagonal close-packed structure in a plan view.

公开(公告)号：US20170287749A1

公开(公告)日：2017-10-05

申请号：US15512614

申请日：2015-09-15

Applicant: Tokyo Electron Limited

Inventor： Makoto MURAMATSU ,  Tadatoshi TOMITA ,  Hisashi GENJIMA ,  Gen YOU ,  Takahiro KITANO

IPC: H01L21/67 ,  G03D5/00 ,  H01L29/66 ,  D06M14/18 ,  H01L21/02 ,  H01L29/51 ,  C08J7/18

CPC classification number: H01L21/0337 ,  C08J7/18 ,  D06M14/18 ,  G03D5/003 ,  G03F7/0002 ,  G03F7/40 ,  H01J37/32082 ,  H01J37/3255 ,  H01L21/02043 ,  H01L21/027 ,  H01L21/0335 ,  H01L21/31 ,  H01L21/67167 ,  H01L21/67173 ,  H01L21/67178 ,  H01L21/6719 ,  H01L29/511 ,  H01L29/66545 ,  H05H1/46

Abstract: A substrate treatment method of treating a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer, includes: a resist pattern formation step of forming a predetermined resist pattern by a resist film on the substrate; a thin film formation step of forming a thin film for suppressing deformation of the resist pattern on a surface of the resist pattern; a block copolymer coating step of applying a block copolymer to the substrate after the formation of the thin film; and a polymer separation step of phase-separating the block copolymer into the hydrophilic polymer and the hydrophobic polymer.

公开(公告)号：US20160124307A1

公开(公告)日：2016-05-05

申请号：US14896415

申请日：2014-06-06

Applicant: Tokyo Electron Limited

Inventor： Makoto MURAMATSU ,  Takahiro KITANO ,  Tadatoshi TOMITA ,  Takanori NISHI ,  Shinichiro KAWAKAMI ,  Takashi YAMAUCHI

IPC: G03F7/20 ,  G03F7/16

CPC classification number: G03F7/20 ,  B81C2201/0149 ,  C08L53/00 ,  C09D153/00 ,  G03F7/0002 ,  G03F7/16 ,  G03F7/32 ,  G03F7/40 ,  H01L21/02282 ,  H01L21/0274 ,  H01L21/3086 ,  H01L21/31133 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/6708

Abstract: A substrate treatment method includes: a polymer separation step of phase-separating a block copolymer into a hydrophilic polymer and a hydrophobic polymer; and a polymer removal step of selectively removing the hydrophilic polymer from the phase-separated block copolymer, wherein in the polymer removal step, the hydrophilic polymer is removed by: irradiating the phase-separated block copolymer with an energy ray; then supplying a first polar organic solvent having a first degree of dissolving the hydrophilic polymer, being lower in boiling point than water and capable of dissolving water, and not dissolving the hydrophobic polymer, to the block copolymer; and then supplying a second polar organic solvent having a second dissolving degree lower than the first dissolving degree, being higher in boiling point than water, and not dissolving the hydrophobic polymer, to the block copolymer.

Abstract translation: 基板处理方法包括：将嵌段共聚物相分离成亲水性聚合物和疏水性聚合物的聚合物分离工序; 以及从相分离的嵌段共聚物中选择性除去亲水性聚合物的聚合物去除步骤，其中在聚合物去除步骤中，通过以下方式除去亲水性聚合物：用能量射线照射相分离的嵌段共聚物; 然后提供具有第一溶解亲水性聚合物的第一极性有机溶剂，其沸点低于水，并且能够将水溶解并且不将疏水性聚合物溶解到嵌段共聚物中; 然后提供第二溶解度低于第一溶解度的第二极性有机溶剂，其沸点高于水，并且不将疏水性聚合物溶解在嵌段共聚物中。