SURFACE TREATMENT LIQUID, SURFACE TREATMENT METHOD, AND METHOD FOR SUPPRESSING PATTERN COLLAPSE

    公开(公告)号:US20190194512A1

    公开(公告)日:2019-06-27

    申请号:US16216261

    申请日:2018-12-11

    IPC分类号: C09K3/18 H01L21/306

    摘要: A surface treatment liquid capable of hydrophobizing a surface of a treatment target without including a silylation agent, a surface treatment method using the liquid, and a method for suppressing pattern collapse, including surface treatment by the surface treatment method. The liquid contains a nitrogen-containing heterocyclic compound as a water-repelling agent. A compound including one or more hydrocarbon groups which may be substituted with a halogen atom in which a total number of carbon atoms of the one or more hydrocarbon group is three or more, is used as the nitrogen-containing heterocyclic compound. The liquid may include only a nitrogen-containing heterocyclic compound having the above-described predetermined structure, as a water-repelling agent.

    CLEANING SOLUTION AND CLEANING METHOD FOR A SEMICONDUCTOR SUBSTRATE OR DEVICE

    公开(公告)号:US20190048293A1

    公开(公告)日:2019-02-14

    申请号:US16079390

    申请日:2017-03-01

    摘要: A cleaning solution and a cleaning method for a semiconductor substrate or device, which has particularly excellent cleaning performance for removing a residue or film including an inorganic substance that contains silicon atoms, and that has a high flash point. The cleaning solution contains a water miscible organic solvent, a quaternary ammonium hydroxide, and water. The water miscible organic solvent is a glycol ether based solvent or an aprotic polar solvent having a flash point of 60° C. or greater. The cleaning method includes using the cleaning solution to clean from the semiconductor substrate or the device a residue or film formed on the semiconductor substrate or adhered to the device, the residue or film including at least one of a resist and an inorganic substance that contains silicon atoms.