公开(公告)号：US07764355B2

公开(公告)日：2010-07-27

申请号：US11779571

申请日：2007-07-18

申请人： Tadahiro Ohmi ,  Yusuke Muraoka ,  Yasuyoshi Miyaji ,  Yasushi Nagashima

发明人： Tadahiro Ohmi ,  Yusuke Muraoka ,  Yasuyoshi Miyaji ,  Yasushi Nagashima

IPC分类号： G03B27/52 ,  G03B27/58 ,  G03B27/62

CPC分类号： H01L21/6875 ,  C25D11/04 ,  C25D11/16 ,  H01L21/67103 ,  H01L21/68757 ,  H01L21/68778

摘要： A stage body has a holding surface for placing a substrate thereon. A predetermined embossed configuration is formed by embossing on the holding surface, and thereafter an alumina film in an amorphous state is formed by an anodic oxidation process on the holding surface. The alumina film having an amorphous structure is dense and strong to provide high wear resistance and to substantially prevent separation electrification. This provides a substrate stage having high wear resistance and capable of preventing separation electrification.

摘要翻译： 台体具有用于在其上放置基板的保持表面。 通过在保持表面上压花来形成预定的压花构造，然后通过阳极氧化工艺在保持表面上形成非晶状态的氧化铝膜。 具有非晶结构的氧化铝膜是致密且坚固的以提供高耐磨性并且基本上防止分离带电。 这提供了具有高耐磨性并且能够防止分离带电的基底台。

公开(公告)号：US20080024742A1

公开(公告)日：2008-01-31

申请号：US11779571

申请日：2007-07-18

申请人： Tadahiro Ohmi ,  Yusuke Muraoka ,  Yasuyoshi Miyaji ,  Yasushi Nagashima

发明人： Tadahiro Ohmi ,  Yusuke Muraoka ,  Yasuyoshi Miyaji ,  Yasushi Nagashima

IPC分类号： G03B27/58 ,  G03B27/52

CPC分类号： H01L21/6875 ,  C25D11/04 ,  C25D11/16 ,  H01L21/67103 ,  H01L21/68757 ,  H01L21/68778

摘要： A stage body has a holding surface for placing a substrate thereon. A predetermined embossed configuration is formed by embossing on the holding surface, and thereafter an alumina film in an amorphous state is formed by an anodic oxidation process on the holding surface. The alumina film having an amorphous structure is dense and strong to provide high wear resistance and to substantially prevent separation electrification. This provides a substrate stage having high wear resistance and capable of preventing separation electrification.

摘要翻译： 台体具有用于在其上放置基板的保持表面。 通过在保持表面上压花来形成预定的压花构造，然后通过阳极氧化工艺在保持表面上形成非晶状态的氧化铝膜。 具有非晶结构的氧化铝膜是致密且坚固的以提供高耐磨性并且基本上防止分离带电。 这提供了具有高耐磨性并且能够防止分离带电的基底台。

公开(公告)号：US08992746B2

公开(公告)日：2015-03-31

申请号：US13310083

申请日：2011-12-02

申请人： Yasuyoshi Miyaji ,  Noriyuki Hayashi ,  Takamitsu Inahara ,  Takao Yonehara ,  Karl-Josef Kramer ,  Subramanian Tamilmani

发明人： Yasuyoshi Miyaji ,  Noriyuki Hayashi ,  Takamitsu Inahara ,  Takao Yonehara ,  Karl-Josef Kramer ,  Subramanian Tamilmani

IPC分类号： C25B9/00 ,  C25B9/02 ,  C25B9/18 ,  C25C7/00 ,  C25C7/06 ,  C25C3/10 ,  C25D11/00

CPC分类号： C25D11/005 ,  C25D17/002 ,  C25D17/005 ,  C25D17/02 ,  Y10S414/135 ,  Y10S414/136 ,  Y10S414/137 ,  Y10S414/138 ,  Y10S414/139 ,  Y10S414/14 ,  Y10S414/141

摘要： An apparatus for anodizing substrates immersed in an electrolyte solution. A substrate holder mounted in a storage tank includes a first support unit having first support elements for supporting, in a liquid-tight condition, only lower circumferential portions of the substrates, and a second support unit attachable to and detachable from the first support unit and having second support elements for supporting, in a liquid-tight condition, remaining circumferential portions of the substrates. A drive mechanism separates the first support unit and the second support unit when loading and unloading the substrates, and for connecting the first support unit and the second support unit after the substrates are placed in the substrate holder.

摘要翻译： 用于阳极氧化沉积在电解质溶液中的基底的装置。 安装在储罐中的基板支架包括第一支撑单元，该第一支撑单元具有第一支撑元件，该第一支撑元件用于在液密状态下仅支撑基板的下周边部分;以及第二支撑单元，其可附接到第一支撑单元并且可从第一支撑单元拆卸; 具有用于在液密条件下支撑基板的剩余周向部分的第二支撑元件。 驱动机构在装载和卸载基板时分离第一支撑单元和第二支撑单元，并且在将基板放置在基板支架中之后连接第一支撑单元和第二支撑单元。

公开(公告)号：US20130180847A1

公开(公告)日：2013-07-18

申请号：US13244466

申请日：2011-09-24

申请人： Takao Yonehara ,  Subramanian Tamilmani ,  Karl-Josef Kramer ,  Jay Ashjaee ,  Mehrdad M. Moslehi ,  Yasuyoshi Miyaji ,  Noriyuki Hayashi ,  Takamitsu Inahara

发明人： Takao Yonehara ,  Subramanian Tamilmani ,  Karl-Josef Kramer ,  Jay Ashjaee ,  Mehrdad M. Moslehi ,  Yasuyoshi Miyaji ,  Noriyuki Hayashi ,  Takamitsu Inahara

IPC分类号： H01L21/02

CPC分类号： C25D11/005 ,  C25D11/32 ,  C25F3/12 ,  C25F7/02 ,  H01L21/0203 ,  H01L21/67086 ,  H01L21/67781 ,  H01L21/68721 ,  H01L21/68771 ,  H01L21/68785 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： This disclosure enables high-productivity fabrication of porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.

摘要翻译： 本公开使得可以高产率地制造多孔半导体层（由诸如多孔硅的单层或多层多孔半导体制成，包括单孔隙率或多孔隙率层）。 一些应用包括制造用于脱模和MEMS器件制造，膜形成和浅沟槽隔离（STI）多孔硅的MEMS分离和牺牲层（使用具有最佳孔隙率的多孔硅形成及其随后的氧化）。 此外，本公开适用于光伏技术的MEMS领域，包括传感器和执行器，独立的或与集成半导体微电子，半导体微电子芯片和光电子集成。

公开(公告)号：US5200025A

公开(公告)日：1993-04-06

申请号：US762587

申请日：1991-09-19

申请人： Keiji Toei ,  Yasuyoshi Miyaji ,  Masanobu Sato ,  Akihiro Inagaki ,  Seiji Tonogai ,  Koichi Omoto

发明人： Keiji Toei ,  Yasuyoshi Miyaji ,  Masanobu Sato ,  Akihiro Inagaki ,  Seiji Tonogai ,  Koichi Omoto

IPC分类号： C23F1/02 ,  C23F1/04 ,  H01J9/14 ,  H01L21/68

CPC分类号： H01L21/6835 ,  C23F1/02 ,  C23F1/04 ,  H01J9/142 ,  H01L2221/68377

摘要： A method of forming small through-holes in a thin metal layer including the steps of forming resist films having openings formed in accordance with a predetermined pattern; etching one or both sides of the thin metal plate and stopping etching before through-holes are formed; removing the overhang of the resist film by spraying high pressure fluid onto the etched side of the thin metal plate; covering the surface by an etch-resisting layer; forming through-holes by etching the side not covered; and stripping the etch-resisting layer and the resist film.

公开(公告)号：US09076642B2

公开(公告)日：2015-07-07

申请号：US13244466

申请日：2011-09-24

申请人： Takao Yonehara ,  Subramanian Tamilmani ,  Karl-Josef Kramer ,  Jay Ashjaee ,  Mehrdad M. Moslehi ,  Yasuyoshi Miyaji ,  Noriyuki Hayashi ,  Takamitsu Inahara

发明人： Takao Yonehara ,  Subramanian Tamilmani ,  Karl-Josef Kramer ,  Jay Ashjaee ,  Mehrdad M. Moslehi ,  Yasuyoshi Miyaji ,  Noriyuki Hayashi ,  Takamitsu Inahara

IPC分类号： H01L21/02 ,  C25D11/32 ,  C25D11/00 ,  H01L21/67 ,  H01L31/18

CPC分类号： C25D11/005 ,  C25D11/32 ,  C25F3/12 ,  C25F7/02 ,  H01L21/0203 ,  H01L21/67086 ,  H01L21/67781 ,  H01L21/68721 ,  H01L21/68771 ,  H01L21/68785 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： This disclosure enables high-productivity fabrication of porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.

摘要翻译： 本公开使得可以高产率地制造多孔半导体层（由诸如多孔硅的单层或多层多孔半导体制成，包括单孔隙率或多孔隙率层）。 一些应用包括制造用于脱模和MEMS器件制造，膜形成和浅沟槽隔离（STI）多孔硅的MEMS分离和牺牲层（使用具有最佳孔隙率的多孔硅形成及其随后的氧化）。 此外，本公开适用于光伏技术的MEMS领域，包括传感器和执行器，独立的或与集成半导体微电子，半导体微电子芯片和光电子集成。