Electron gun
    1.
    发明授权
    Electron gun 失效
    电子枪

    公开(公告)号:US4363995A

    公开(公告)日:1982-12-14

    申请号:US189908

    申请日:1980-09-23

    CPC分类号: H01J1/15 H01J3/02 H01J37/06

    摘要: An electron gun having a cathode of a lanthanum hexaboride single crystal is disclosed in which the axis of the cathode is set to such a crystal orientation that the electron beam has two intensive emission regions which are asymmetrical with each other in intensity. In the electron gun, even at a low heating temperature of the cathode, a single spot of an image by the electron beam of a more intensive emission region since the electron beam of a weaker intensity emission region is blocked by an aperture.

    摘要翻译: 公开了一种具有六硼化镧单晶阴极的电子枪,其中阴极的轴线被设定为使得电子束具有彼此强度不对称的两个密集发射区域的晶体取向。 在电子枪中,即使在阴极的低加热温度下,由于较弱强度发射区域的电子束被孔径阻挡,所以由更强烈的发射区域的电子束形成的单个点的图像。

    Electron beam exposing apparatus
    2.
    发明授权
    Electron beam exposing apparatus 失效
    电子束曝光装置

    公开(公告)号:US4430570A

    公开(公告)日:1984-02-07

    申请号:US213026

    申请日:1980-12-04

    摘要: A variable shaping type electron beam exposing apparatus is provided which comprises an electron gun which irradiates an electron beam from the front end of a cathode chip; shaping plates having openings of variable shapes for shaping the electron beam irradiated from the electron gun into the shapes of these openings; and an objective lens for focusing the electron beam passed through the shaping plates into a predetermined shape on a sample. In this apparatus, the cathode chip is made of single-crystal lanthanum hexaboride whose axial orientation is , the front end of it is formed into a circular conical shape, and half the vertical angle of the front end is set to be between 60.degree. and 85.degree.. The maximum area of the image on the sample is between 2 to 50 .mu.m.sup.2.

    摘要翻译: 提供了一种可变整形型电子束曝光装置,其包括从阴极芯片的前端照射电子束的电子枪; 具有可变形状的开口的成形板,用于将从电子枪照射的电子束成形为这些开口的形状; 以及用于将通过成形板的电子束聚焦到样品上的预定形状的物镜。 在该装置中,阴极芯片由轴向取向为<310>的单晶镧六硼化物制成,其前端形成圆锥形,前端的一半垂直角设定在 60°和85°。 样品上图像的最大面积在2到50平方米之间。

    Ion implantation method
    3.
    发明授权
    Ion implantation method 失效
    离子注入法

    公开(公告)号:US4481042A

    公开(公告)日:1984-11-06

    申请号:US448048

    申请日:1982-12-08

    摘要: An ion implantation method is provided which uses an ion implantation apparatus which is capable of focusing an ion beam into a spot having a diameter smaller than the size of a region into which ions are to be implanted. The ion dose is varied in accordance with the gate region, source and drain regions, and the field region of a semiconductor device including a transistor having short gate length and width.

    摘要翻译: 提供了一种离子注入方法,其使用离子注入装置,该离子注入装置能够将离子束聚焦到直径小于要注入离子的区域的尺寸的点。 离子剂量根据栅极区域,源极和漏极区域以及包括具有短栅极长度和宽度的晶体管的半导体器件的场区域而变化。

    Electron beam apparatus
    4.
    发明授权
    Electron beam apparatus 失效
    电子束装置

    公开(公告)号:US4424448A

    公开(公告)日:1984-01-03

    申请号:US216948

    申请日:1980-12-16

    摘要: An electron beam apparatus comprises an electron gun having a cathode consisting of single-crystal lanthanum hexaboride and a plurality of electron lenses for projecting the cross-over image of an electron beam emitted from the electron gun as a reduced-scale image onto a sample. It further comprises a circuit for measuring the brightness and shape of the cross-over image projected onto the sample and the emission pattern of the electron beam emitted from the electron gun, and a circuit for applying a bias voltage, with which the cross-over image has a desired brightness and is round and the emission pattern is anisotropic, to the electron gun.

    摘要翻译: 电子束装置包括具有由单晶镧六硼化物构成的阴极和多个电子透镜的电子枪,用于将从电子枪发射的电子束的交叉图像作为缩小图像投射到样品上。 它还包括一个电路,用于测量投射到样品上的交叉图像的亮度和形状以及从电子枪发射的电子束的发射图案,以及一个施加偏置电压的电路,与之交叉 图像具有期望的亮度,并且是圆形的,并且发射图案是各向异性的,对于电子枪。

    Electron beam system
    5.
    发明授权
    Electron beam system 失效
    电子束系统

    公开(公告)号:US4321510A

    公开(公告)日:1982-03-23

    申请号:US180439

    申请日:1980-08-22

    申请人: Tadahiro Takigawa

    发明人: Tadahiro Takigawa

    摘要: An electron source section including a first detecting sub-section and a first control sub-section and an image formation section including a second detecting sub-section and a second control sub-section are arranged in series. The first detecting sub-section detects at least one of the shape, diameter, brightness and spatial position of a crossover image formed by the electron source section to become an electron source of the image formation section and the direction of emission of the electron beam emitted from such crossover image, thereby to control the first control sub-section. The second detecting sub-section detects at least one of the shape and size of an electron beam image formed on a subject to be irradiated by the beam, and the current of the electron beam forming the electron beam image, thereby to control the second control sub-section.

    摘要翻译: 包括第一检测子部分和第一控制子部分的电子源部分和包括第二检测子部分和第二控制子部分的图像形成部分被串联布置。 第一检测子部分检测由电子源部分形成的成为图像形成部分的电子源的交叉图像的形状,直径,亮度和空间位置中的至少一个以及发射的电子束的发射方向 从这样的交叉图像,从而控制第一控制子部分。 第二检测子部分检测形成在被光束照射的被摄体上的电子束图像的形状和大小中的至少一个以及形成电子束图像的电子束的电流,从而控制第二控制 小节。

    Electron beam exposing method and electron beam apparatus
    6.
    发明授权
    Electron beam exposing method and electron beam apparatus 失效
    电子束曝光方法和电子束装置

    公开(公告)号:US4199689A

    公开(公告)日:1980-04-22

    申请号:US971043

    申请日:1978-12-19

    申请人: Tadahiro Takigawa

    发明人: Tadahiro Takigawa

    IPC分类号: H01J37/24 H01J37/30 H01J37/00

    CPC分类号: H01J37/241 H01J37/3007

    摘要: The diameter of an electron beam at a crossover point can be set to a predetermined value by adjusting a heater current through a heater of an electron gun and a voltage between an emitter of the electron gun and wehnelt electrode. The diameter of the electron beam incident onto an object to be exposed can be varied by varying the diameter of the electron beam at the crossover point. This can be done without adjusting an electron beam lens and deflection electrode of an electron beam exposing apparatus. The diameter of the electron beam incident onto an object to be exposed can be set to a predetermined value dependent upon a pattern to be described.

    摘要翻译: 通过调节通过电子枪的加热器的加热器电流和电子枪的发射极与电极之间的电压,可以将交叉点处的电子束的直径设定为预定值。 入射到待曝光物体上的电子束的直径可以通过在交叉点处改变电子束的直径来改变。 这可以在不调整电子束曝光装置的电子束透镜和偏转电极的情况下进行。 入射到待曝光物体上的电子束的直径可以根据要描述的图案设定为预定值。

    Electron beam exposure apparatus
    7.
    发明授权
    Electron beam exposure apparatus 失效
    电子束曝光装置

    公开(公告)号:US4151417A

    公开(公告)日:1979-04-24

    申请号:US892128

    申请日:1978-03-31

    申请人: Tadahiro Takigawa

    发明人: Tadahiro Takigawa

    CPC分类号: H01J37/304 H01J37/3007

    摘要: An electron beam exposure apparatus comprises a pair of electrostatic deflecting plates so disposed that the center thereof in the direction of an advancing electron beam emitted from an electron gun is located on the crossover point of said beam, a variable voltage source for said deflecting plates and an aperture disposed in the path of the deflected electron beam.

    摘要翻译: 电子束曝光装置包括一对静电偏转板,其设置成使得其从电子枪发射的前进电子束的方向的中心位于所述光束的交叉点上,所述偏转板的可变电压源和 设置在偏转的电子束的路径中的孔。

    Insulated-gate field-effect transistor
    8.
    发明授权
    Insulated-gate field-effect transistor 失效
    绝缘栅场效应晶体管

    公开(公告)号:US4080618A

    公开(公告)日:1978-03-21

    申请号:US720804

    申请日:1976-09-07

    摘要: An insulated-gate field-effect transistor having improved high-speed operation characteristics and high channel controllability includes a source region having first and second diffused regions and a drain region having first and second diffused regions. The first diffused regions of both the source and drain regions are formed by diffusion of a first impurity having relatively low diffusion coefficient and the second diffused regions of both the source and drain regions are formed by diffusion of a second impurity having relatively high diffusion coefficient.

    摘要翻译: 具有改善的高速操作特性和高通道可控性的绝缘栅场效应晶体管包括具有第一和第二扩散区的源极区和具有第一和第二扩散区的漏极区。 源极和漏极区域的第一扩散区域通过具有相对低扩散系数的第一杂质的扩散而形成,并且源极和漏极区域的第二扩散区域由扩散系数相对较高的第二杂质的扩散形成。

    Focused ion beam deposition using TMCTS
    9.
    发明授权
    Focused ion beam deposition using TMCTS 失效
    使用TMCTS聚焦离子束沉积

    公开(公告)号:US5639699A

    公开(公告)日:1997-06-17

    申请号:US420153

    申请日:1995-04-11

    摘要: According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate around the bump defect or close to the bump defect, forming a second thin film on the bump defect and the first thin film to flatten an upper surface of the second thin film, performing simultaneous removal of the bump defect and the thin films on an upper portion of the projecting defect and around the bump defect using a charged particle beam, and performing removal of the thin films left in the step of performing simultaneous removal. According to this invention, there is provided to a method of repairing a divot defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of burying a material in the divot defect and forming a projecting portion projecting from a substrate surface, covering a region including the projecting portion with flattening films consisting of a material different from that of the substrate to flatten an upper surface of the region, performing simultaneous removal of the projecting portion and the flattening films around the projecting portion using a charged particle beam, and performing removal of the flattening films left in the step of performing simultaneous removal.

    摘要翻译: 根据本发明,提供了一种修复通过在基板上形成预定图案而获得的结构的凸点缺陷的方法,该方法具有以下步骤:在基板上形成由不同于基板的材料构成的第一薄膜 在凸起缺陷附近或接近凸块缺陷的情况下,在凸起缺陷上形成第二薄膜和使第一薄膜平坦化第二薄膜的上表面,同时去除凸起缺陷和上部的薄膜 使用带电粒子束的突出缺陷的一部分和凸起缺陷周围,并且执行在执行同时移除的步骤中留下的薄膜的去除。 根据本发明,提供了一种修复通过在基板上形成预定图案而获得的结构的凹陷缺陷的方法,该方法具有以下步骤:将材料埋在凹陷缺陷中并形成从基板表面突出的突出部分 使用由与基板不同的材料构成的平坦化膜覆盖包括突出部分的区域,以平坦化该区域的上表面,使用带电粒子束同时移除突出部分周围的突出部分和平坦化膜 并且执行在执行同时去除的步骤中留下的平坦化膜的去除。