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    Fabrication process of semiconductor lasers
    1.
    发明授权
    Fabrication process of semiconductor lasers 失效
    半导体激光器的制造工艺

    公开(公告)号：US4783425A

    公开(公告)日：1988-11-08

    申请号：US924774

    申请日：1986-10-30

    申请人： Tadashi Fukuzawa ,  Yuichi Ono ,  Shinichi Nakatsuka ,  Takashi Kajimura

    发明人： Tadashi Fukuzawa ,  Yuichi Ono ,  Shinichi Nakatsuka ,  Takashi Kajimura

    IPC分类号： H01L33/00 ,  H01S5/20 ,  H01S5/223 ,  H01S5/323 ,  H01S5/34 ,  H01L21/205 ,  H01L21/225 ,  H01L21/265

    CPC分类号： B82Y20/00 ,  H01L33/0062 ,  H01S5/2231 ,  H01S5/34 ,  H01S5/2081 ,  H01S5/32316

    摘要： A p-GaAlAs cladding layer is exposed to the air if a groove of the form of a stripe is formed by chemical etching in an n-GaAs layer that serves as a current confinement layer on the p-GaAlAs cladding layer, the groove being so formed as to reach the cladding layer. The GaAlAs is oxidized so easily that an unstable degradation layer is formed on the surface thereof. To solve this problem according to the prior art, an undoped GaAs layer that serves as a cover layer is formed on the p-GaAlAs cladding layer, the n-GaAs layer is formed, and the etching is effected so that the undoped GaAs layer is simply exposed. The undoped GaAs layer is then heated in the MBE apparatus while being irradiated with the As molecular beam and is thermally etched. Therefore, the cladding layer is exposed in vacuum and the p-GaAlAs layer is formed thereon. However, this method is not suited for mass-production since the thermal etching is unstable and it needs the MBE apparatus of a very high degree of vacuum. Quality of the crystal decreases, too, due to the heating. This invention therefore provides a fabrication process of semiconductor lasers in which the cover layer disappears due to interdiffusion of constituent elements that stem from the diffusion of impurities such as zinc ions in the undoped GaAs layer.

    摘要翻译： 如果通过在p-GaAlAs包层上作为电流限制层的n-GaAs层中的化学蚀刻形成条纹形式的沟槽，则p-GaAlAs包层暴露于空气中，凹槽为 形成为到达包层。 GaAlAs容易氧化，从而在其表面上形成不稳定的降解层。 为了解决现有技术的问题，在p-GaAlAs包层上形成作为覆盖层的未掺杂的GaAs层，形成n-GaAs层，进行蚀刻，使未掺杂的GaAs层为 简单暴露。 然后在MBE装置中加热未掺杂的GaAs层，同时用As分子束照射并进行热蚀刻。 因此，在真空中露出包覆层，在其上形成p-GaAlAs层。 然而，该方法不适于批量生产，因为热蚀刻不稳定，并且需要非常高真空度的MBE装置。 由于加热，晶体的质量也降低。 因此，本发明提供一种半导体激光器的制造工艺，其中由于在未掺杂的GaAs层中的诸如锌离子的杂质的扩散而导致的构成元素的相互扩散，覆盖层消失。

    Semiconductor laser device
    7.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US4740976A

    公开(公告)日：1988-04-26

    申请号：US592956

    申请日：1984-03-23

    申请人： Takashi Kajimura ,  Shinichi Nakatuka ,  Naoki Chinone ,  Michiharu Nakamura ,  Yuichi Ono

    发明人： Takashi Kajimura ,  Shinichi Nakatuka ,  Naoki Chinone ,  Michiharu Nakamura ,  Yuichi Ono

    IPC分类号： H01S5/223 ,  H01S5/343 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/2231 ,  H01S5/34313 ,  H01S5/3432

    摘要： A semiconductor laser device comprises a semiconductor layer stack consisting of a first clad layer, an active layer, and a second clad layer which are successively stacked on a semiconductor substrate, and a light absorbing layer and a current blocking layer which are stacked on the second clad layer; the semiconductor assembly including a stripe shaped groove which extends from the surface of the semiconductor layer stack to the surface or interior of the second cladding layer, and another semiconductor layer having a forbidden band width greater than the active layer and the same conductivity type as the second clad layer which is embedded into the groove by chemical vapor deposition method.

    摘要翻译： 半导体激光器件包括由半导体衬底上依次层叠的第一覆盖层，有源层和第二覆盖层构成的半导体层堆叠，以及层叠在第二覆盖层上的光吸收层和电流阻挡层 包层 所述半导体组件包括从所述半导体层堆叠的表面延伸到所述第二包层的表面或内部的条形槽，以及具有比所述有源层大的禁带宽度和与所述有源层相同的导电类型的另一半导体层 通过化学气相沉积法嵌入凹槽中的第二覆层。

    Semiconductor laser
    10.
    发明授权
    Semiconductor laser 失效
    半导体激光器

    公开(公告)号：US4797891A

    公开(公告)日：1989-01-10

    申请号：US941842

    申请日：1986-12-15

    申请人： Kazuhisa Uomi ,  Misuzu Yoshizawa ,  Yuichi Ono ,  Naoki Chinone ,  Takashi Kajimura

    发明人： Kazuhisa Uomi ,  Misuzu Yoshizawa ,  Yuichi Ono ,  Naoki Chinone ,  Takashi Kajimura

    IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/06 ,  H01S5/062 ,  H01S5/40 ,  H01S3/19

    CPC分类号： H01S5/4031 ,  H01S5/06243 ,  H01S5/4075

    摘要： The present invention relates to phased-array semiconductor lasers having a radiation angle turnable by oscillating independently and stably between the fundamental supermode and the higher order supermode and switching the radiation angles by utilizing the property that their radiation angles are different.Optical switching and optical scanning, that have been difficult in the prior art, can be made more easily by use of a semiconductor laser having a turnable radiation angle.The objection of the present invention can be accomplished by disposing separate electrodes at the emission stripes and at the gap between the stripes in the phased-array semiconductor laser.Further, the present invention may be accomplished by dividing at least one stripe electrode in order to form electrode regions. When the current is applied to all the electrodes, oscillation occurs in the highest order mode and the beam is emitted in another direction. When the current is applied to only the electrode exclusive of the electrode regions, oscillation occurs in the fundamental mode and the beam is emitted in a direction vertical to a facet.Moreover, the present invention may be accomplished by disposing electrodes outside the stripe regions of the phased-array semiconductor laser so that oscillation occurs in the fundamental supermode when the electric field is applied to the electrodes and in the higher order mode when the electric field is not applied.

    摘要翻译： 本发明涉及通过利用其辐射角不同的性质，通过在基本超模和高阶超模之间独立且稳定地振荡而切换辐射角的相位阵列半导体激光器。 通过使用具有可转动的辐射角的半导体激光器，可以更容易地使现有技术中难以进行的光学切换和光学扫描。 本发明的反对可以通过在相控阵半导体激光器中的发射条和条之间的间隙设置分开的电极来实现。 此外，本发明可以通过划分至少一个条状电极来形成电极区域来实现。 当电流施加到所有电极时，在最高阶模式下发生振荡，并且光束在另一个方向上发射。 当只将电流施加到不包括电极区域的电极时，基本模式发生振荡，并且在垂直于小面的方向上发射光束。 此外，本发明可以通过将电极设置在相控阵半导体激光器的条纹区域之外来实现，使得当电场施加到电极时在基本超模中发生振荡，并且当电场为 没有申请。