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41 条记录 (耗时 0.032 秒)

    Semiconductor laser
    5.
    发明授权
    Semiconductor laser 失效
    半导体激光器

    公开(公告)号：US4797891A

    公开(公告)日：1989-01-10

    申请号：US941842

    申请日：1986-12-15

    申请人： Kazuhisa Uomi ,  Misuzu Yoshizawa ,  Yuichi Ono ,  Naoki Chinone ,  Takashi Kajimura

    发明人： Kazuhisa Uomi ,  Misuzu Yoshizawa ,  Yuichi Ono ,  Naoki Chinone ,  Takashi Kajimura

    IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/06 ,  H01S5/062 ,  H01S5/40 ,  H01S3/19

    CPC分类号： H01S5/4031 ,  H01S5/06243 ,  H01S5/4075

    摘要： The present invention relates to phased-array semiconductor lasers having a radiation angle turnable by oscillating independently and stably between the fundamental supermode and the higher order supermode and switching the radiation angles by utilizing the property that their radiation angles are different.Optical switching and optical scanning, that have been difficult in the prior art, can be made more easily by use of a semiconductor laser having a turnable radiation angle.The objection of the present invention can be accomplished by disposing separate electrodes at the emission stripes and at the gap between the stripes in the phased-array semiconductor laser.Further, the present invention may be accomplished by dividing at least one stripe electrode in order to form electrode regions. When the current is applied to all the electrodes, oscillation occurs in the highest order mode and the beam is emitted in another direction. When the current is applied to only the electrode exclusive of the electrode regions, oscillation occurs in the fundamental mode and the beam is emitted in a direction vertical to a facet.Moreover, the present invention may be accomplished by disposing electrodes outside the stripe regions of the phased-array semiconductor laser so that oscillation occurs in the fundamental supermode when the electric field is applied to the electrodes and in the higher order mode when the electric field is not applied.

    摘要翻译： 本发明涉及通过利用其辐射角不同的性质，通过在基本超模和高阶超模之间独立且稳定地振荡而切换辐射角的相位阵列半导体激光器。 通过使用具有可转动的辐射角的半导体激光器，可以更容易地使现有技术中难以进行的光学切换和光学扫描。 本发明的反对可以通过在相控阵半导体激光器中的发射条和条之间的间隙设置分开的电极来实现。 此外，本发明可以通过划分至少一个条状电极来形成电极区域来实现。 当电流施加到所有电极时，在最高阶模式下发生振荡，并且光束在另一个方向上发射。 当只将电流施加到不包括电极区域的电极时，基本模式发生振荡，并且在垂直于小面的方向上发射光束。 此外，本发明可以通过将电极设置在相控阵半导体激光器的条纹区域之外来实现，使得当电场施加到电极时在基本超模中发生振荡，并且当电场为 没有申请。

    Semiconductor laser having a multiple quantum well structure doped with impurities
    8.
    发明授权
    Semiconductor laser having a multiple quantum well structure doped with impurities 失效
    具有掺杂有杂质的多量子阱结构的半导体激光器

    公开(公告)号：US4881235A

    公开(公告)日：1989-11-14

    申请号：US41410

    申请日：1987-04-23

    申请人： Naoki Chinone ,  Kazuhisa Uomi ,  Tadashi Fukuzawa ,  Hideaki Matsueda ,  Takashi Kajimura ,  Tsukuru Ohtoshi

    发明人： Naoki Chinone ,  Kazuhisa Uomi ,  Tadashi Fukuzawa ,  Hideaki Matsueda ,  Takashi Kajimura ,  Tsukuru Ohtoshi

    IPC分类号： H01S5/227 ,  H01S5/34

    CPC分类号： B82Y20/00 ,  H01S5/227 ,  H01S5/34 ,  H01S5/2275 ,  H01S5/309 ,  H01S5/3407 ,  Y10S372/704

    摘要： In a well-known semiconductor laser, a multiple quantum well type active layer consisting of barrier layers and active layers or well layers, each of which has a thickness less than the de Broglie wavelength of electrons, is doped with an impurity, and the impurity density is made higher in the barrier layer than in the well layer. Further, in a case where the multiple quantum well active layer is held between p-type and n-type cladding layers, the well layer is undoped, the part of the barrier layer lying in contact with the well layer is undoped, and the other part of the barrier layer close to the p-type cladding layer is put into the n-conductivity type while that of the barrier layer close to the n-type cladding layer is put into the n-conductivity type. Desirably, the impurity density should range from about 1.times.10.sup.18 to about 1.times.10.sup.19 cm.sup.- 3.

    摘要翻译： 在众所周知的半导体激光器中，掺杂有杂质的由势垒层和活性层或阱层构成的多量子阱型有源层的厚度小于电子的德布罗意波长， 在阻挡层中的密度比井层中的密度高。 此外，在多量子阱活性层保持在p型和n型覆层之间的情况下，阱层未掺杂，阻挡层与阱层接触的部分未掺杂，另一方面 靠近p型包层的阻挡层的一部分被放入n导电型，而靠近n型包覆层的势垒层的部分被放入n导电型。 理想地，杂质密度应在约1×1018至约1×1019cm-3的范围内。

    Semiconductor laser having quantum well active region doped with impurities
    9.
    发明授权
    Semiconductor laser having quantum well active region doped with impurities 失效
    具有掺杂有杂质的量子阱活性区的半导体激光器

    公开(公告)号：US4881238A

    公开(公告)日：1989-11-14

    申请号：US888073

    申请日：1986-07-22

    申请人： Naoki Chinone ,  Kazuhisa Uomi ,  Tadashi Fukuzawa ,  Hideaki Matsueda ,  Takashi Kajimura

    发明人： Naoki Chinone ,  Kazuhisa Uomi ,  Tadashi Fukuzawa ,  Hideaki Matsueda ,  Takashi Kajimura

    IPC分类号： H01S5/227 ,  H01S5/30 ,  H01S5/34

    CPC分类号： B82Y20/00 ,  H01S5/34 ,  H01S5/2275 ,  H01S5/3086 ,  H01S5/309 ,  H01S5/3407

    摘要： In a well-known semiconductor laser, a multiple quantum well type active layer consisting of barrier layers and active layers or well layers, each of which has a thickness less than the de Broglie wavelength of electrons, is doped with an impurity, and the impurity density is made higher in the barrier layer than in the well layer. Further, in a case where the multiple quantum well active layer is held between p-type and n-type cladding layers, the well layer is undoped, the part of the barrier layer lying in contact with the well layer is undoped, and the other part of the barrier layer close to the p-type cladding layer is put into the n-conductivity type while that of the barrier layer close to the n-type cladding layer is put into the p-conductivity type.

    摘要翻译： 在众所周知的半导体激光器中，掺杂有杂质的由势垒层和活性层或阱层构成的多量子阱型有源层的厚度小于电子的德布罗意波长， 在阻挡层中的密度比井层中的密度高。 此外，在多量子阱活性层保持在p型和n型覆层之间的情况下，阱层未掺杂，阻挡层与阱层接触的部分未掺杂，另一方面 靠近p型覆层的阻挡层的一部分被放入n导电型，而靠近n型包覆层的阻挡层的部分被放入p导电型。

    Multi quantum well laser with parallel injection
    10.
    发明授权
    Multi quantum well laser with parallel injection 失效
    多量子阱激光器并行注入

    公开(公告)号：US4752934A

    公开(公告)日：1988-06-21

    申请号：US898199

    申请日：1986-08-20

    申请人： Tadashi Fukuzawa ,  Naoki Chinone ,  Kazuhisa Uomi ,  Takashi Kajimura

    发明人： Tadashi Fukuzawa ,  Naoki Chinone ,  Kazuhisa Uomi ,  Takashi Kajimura

    IPC分类号： H01S5/00 ,  H01S3/00 ,  H01S5/02 ,  H01S5/042 ,  H01S5/20 ,  H01S5/343 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/0424 ,  H01S5/20 ,  H01S5/0208 ,  H01S5/2059 ,  H01S5/3432

    摘要： A semiconductor laser having such a structure that a laser structure including a laser active region of multi quantum well structure, cladding layers and a cap layer is formed on a substrate, is disclosed in which both end regions of the laser active region in the quantum well layer is converted into mixed crystal by impurity induced intermixing so that a multi quantum well active region is sandwiched between mixed crystal regions, and impurity diffused regions are formed between the surface of the crystal and the mixed crystal regions, to form a current path and to inject carriers into the multi quantum well region in a direction parallel to the laser active layer. Thus, the semiconductor laser can modulate laser oscillation at a very high frequency, and moreover is readily fabricated or integrated.

    摘要翻译： 公开了一种半导体激光器，其具有在基板上形成包括多量子阱结构的激光有源区域，包层和盖层的激光结构的结构，其中量子阱中的激光有源区的两个端部区域 通过杂质诱导的混合将层转换为混晶，使得多量子阱有源区夹在混晶区之间，并且在晶体表面和混晶区之间形成杂质扩散区，形成电流路径， 在平行于激光有源层的方向上将载流子注入多量子阱区域。 因此，半导体激光器可以以非常高的频率调制激光振荡，并且还容易地制造或集成。