公开(公告)号：US07708900B2

公开(公告)日：2010-05-04

申请号：US11591274

申请日：2006-11-01

申请人： Jae Hoon Choung ,  In Kyung Lee ,  Won Young Choi ,  Tae Young Lee ,  Ji Chul Yang

发明人： Jae Hoon Choung ,  In Kyung Lee ,  Won Young Choi ,  Tae Young Lee ,  Ji Chul Yang

IPC分类号： C03C15/00 ,  C03C25/68

CPC分类号： H01L21/3212 ,  C09K3/1463 ,  H01L21/31053

摘要： Provided herein are chemical mechanical polishing (CMP) slurries and methods for producing the same.Embodiments of the invention include CMP slurries that include (a) a metal oxide; (b) a quaternary ammonium base; and (c) a fluorinated surfactant. In some embodiments, the fluorinated surfactant is a non-ionic perfluoroalkyl sulfonyl compound.Also provided herein are methods of polishing a polycrystalline silicon surface, including providing a slurry composition according to an embodiment of the invention to a polycrystalline silicon surface and performing a CMP process to polish the polycrystalline silicon surface.

摘要翻译： 本文提供了化学机械抛光（CMP）浆料及其制备方法。 本发明的实施方案包括CMP浆料，其包括（a）金属氧化物; （b）季铵碱; 和（c）氟化表面活性剂。 在一些实施方案中，氟化表面活性剂是非离子全氟烷基磺酰基化合物。 本文还提供了抛光多晶硅表面的方法，包括将根据本发明的实施方案的浆料组合物提供给多晶硅表面，并执行CMP工艺以抛光多晶硅表面。

公开(公告)号：US07601273B2

公开(公告)日：2009-10-13

申请号：US11367406

申请日：2006-03-06

申请人： Hyun Soo Roh ,  Tae Won Park ,  Tae Young Lee ,  In Kyung Lee ,  Chin Ho Lee ,  Young Woo Kim ,  Moon Ro Choi ,  Jong Seop Kim

发明人： Hyun Soo Roh ,  Tae Won Park ,  Tae Young Lee ,  In Kyung Lee ,  Chin Ho Lee ,  Young Woo Kim ,  Moon Ro Choi ,  Jong Seop Kim

IPC分类号： C09K13/00

CPC分类号： H01L21/02024 ,  B24B37/044 ,  C09G1/02 ,  C09K3/1463

摘要： A polishing slurry composition including an abrasive, a pH-adjusting agent, a water-soluble thickening agent, and a chelating agent, wherein the chelating agent includes at least one of an acetate chelating agent and a phosphate chelating agent, and a method of using the same.

摘要翻译： 1.一种抛光浆料组合物，其含有研磨剂，pH调节剂，水溶性增稠剂和螯合剂，其中所述螯合剂包括乙酸盐螯合剂和磷酸盐螯合剂中的至少一种，以及使用 一样。

公开(公告)号：US20090294749A1

公开(公告)日：2009-12-03

申请号：US12540661

申请日：2009-08-13

申请人： Tae Young Lee ,  In Kyung Lee ,  Byoung Ho Choi ,  Yong Soon Park

发明人： Tae Young Lee ,  In Kyung Lee ,  Byoung Ho Choi ,  Yong Soon Park

IPC分类号： H01L21/306 ,  H01L21/10 ,  H01L21/06 ,  H01L47/00

CPC分类号： C09G1/04 ,  H01L45/06 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1683

摘要： A slurry composition for chemical mechanical polishing (CMP) of a phase-change memory device is provided. The slurry composition comprises deionized water and iron or an iron compound. The slurry composition can achieve high polishing rate on a phase-change memory device and improved polishing selectivity between a phase-change memory material and a polish stop layer (e.g., a silicon oxide film), can minimize the occurrence of processing imperfections (e.g., dishing and erosion), and can lower the etch rate on a phase-change memory material to provide a high-quality polished surface. Further provided is a method for polishing a phase-change memory device using the slurry composition.

摘要翻译： 提供了一种用于相变存储器件的化学机械抛光（CMP）的浆料组合物。 浆料组合物包含去离子水和铁或铁化合物。 浆料组合物可以在相变存储器件上实现高抛光速率并且改善相变记忆材料和抛光停止层（例如，氧化硅膜）之间的抛光选择性，可以最小化处理缺陷的发生（例如， 凹陷和侵蚀），并且可以降低相变记忆材料上的蚀刻速率，以提供高质量的抛光表面。 还提供了使用该浆料组合物来研磨相变存储器件的方法。

公开(公告)号：US09695347B2

公开(公告)日：2017-07-04

申请号：US11965453

申请日：2007-12-27

申请人： Homer Chou ,  Won Lae Kim ,  Jong Il Noh ,  In Kyung Lee ,  Tae Young Lee

发明人： Homer Chou ,  Won Lae Kim ,  Jong Il Noh ,  In Kyung Lee ,  Tae Young Lee

IPC分类号： H01L21/302 ,  H01L21/461 ,  C09K3/14 ,  C09G1/02 ,  C23F3/06 ,  H01L21/321

CPC分类号： C09K3/1463 ,  C09G1/02 ,  C09K3/1409 ,  C23F3/06 ,  H01L21/3212

摘要： Provided is a slurry composition for chemical mechanical polishing (CMP) of a metal. The slurry composition comprises a copolymer whose average molecular weight is from about 600,000 to about 1,300,000 and whose monomers are acrylic acid and acrylamide in a molar ratio of about 1:30 to about 30:1. The slurry composition exhibits a non-Prestonian behavior to achieve minimized dishing and attain a high degree of planarization.

公开(公告)号：US08586464B2

公开(公告)日：2013-11-19

申请号：US12540661

申请日：2009-08-13

申请人： Tae Young Lee ,  In Kyung Lee ,  Byoung Ho Choi ,  Yong Soon Park

发明人： Tae Young Lee ,  In Kyung Lee ,  Byoung Ho Choi ,  Yong Soon Park

IPC分类号： H01L21/4763 ,  H01L21/00

CPC分类号： C09G1/04 ,  H01L45/06 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1683

摘要： A slurry composition for chemical mechanical polishing (CMP) of a phase-change memory device is provided. The slurry composition comprises deionized water and iron or an iron compound. The slurry composition can achieve high polishing rate on a phase-change memory device and improved polishing selectivity between a phase-change memory material and a polish stop layer (e.g., a silicon oxide film), can minimize the occurrence of processing imperfections (e.g., dishing and erosion), and can lower the etch rate on a phase-change memory material to provide a high-quality polished surface. Further provided is a method for polishing a phase-change memory device using the slurry composition.

摘要翻译： 提供了一种用于相变存储器件的化学机械抛光（CMP）的浆料组合物。 浆料组合物包含去离子水和铁或铁化合物。 浆料组合物可以在相变存储器件上实现高抛光速率并且改善相变记忆材料和抛光停止层（例如，氧化硅膜）之间的抛光选择性，可以最小化处理缺陷的发生（例如， 凹陷和侵蚀），并且可以降低相变记忆材料上的蚀刻速率，以提供高质量的抛光表面。 还提供了使用该浆料组合物来研磨相变存储器件的方法。

公开(公告)号：US20150115379A1

公开(公告)日：2015-04-30

申请号：US14403058

申请日：2012-06-26

申请人： Sang Ho Lim ,  Tae Young Lee ,  Seong Rae Lee ,  Dong-Su Son

发明人： Sang Ho Lim ,  Tae Young Lee ,  Seong Rae Lee ,  Dong-Su Son

IPC分类号： H01L43/10 ,  H01L43/02 ,  H01L43/12

CPC分类号： H01L43/10 ,  G01R33/098 ,  G11C11/161 ,  H01F10/123 ,  H01F10/3286 ,  H01L43/02 ,  H01L43/12

摘要： The present invention relates to a cobalt (Co) and platinum (Pt)-based multilayer thin film having a novel structure and perpendicular magnetic anisotropy, and to a fabrication method thereof. More specifically, the invention relates to a cobalt and platinum-based multilayer thin film having perpendicular magnetic anisotropy (PMA), which includes thin cobalt layers and thin platinum layers alternately deposited over a substrate, and has an inverted structure in which a thickness of the thin cobalt layers is greater than that of the thin platinum layers, and to a fabrication method thereof. The cobalt and platinum-based multilayer thin film has a new structure in which the thickness of a magnetic thin layer is greater than that of a non-magnetic thin layer. The multilayer thin film may be easily applied as a free layer and a pinned layer in a magnetic tunnel junction by controlling the perpendicular magnetic anisotropy energy depending on the thickness ratio of the layers. Also, the multilayer thin film has excellent thermal stability, and thus maintains its PMA energy density even after being subjected to a heat treatment process. In addition, it enables a fine amount of in-plane magnetic anisotropy to be formed by heat treatment so as to reduce the critical current density required for magnetization switching. Therefore, it may be advantageously used for high-performance and high-density MRAM.

摘要翻译： 本发明涉及具有新颖结构和垂直磁各向异性的钴（Co）和铂（Pt）基多层薄膜及其制造方法。 更具体地，本发明涉及具有垂直磁各向异性（PMA）的钴和铂基多层薄膜，其包括交替沉积在衬底上的薄钴层和薄铂层，并且具有倒置结构，其中， 薄的钴层的厚度大于薄铂层的制造方法。 钴和铂基多层薄膜具有磁性薄层的厚度大于非磁性薄层的厚度的新结构。 通过根据层的厚度比控制垂直磁各向异性能，可以容易地将多层薄膜作为自由层和钉扎层施加在磁性隧道结中。 此外，多层薄膜具有优异的热稳定性，因此即使在经受热处理工艺之后也能保持其PMA能量密度。 此外，通过热处理能够形成精细的面内磁各向异性，从而降低磁化切换所需的临界电流密度。 因此，可以有利地用于高性能和高密度的MRAM。

公开(公告)号：US07652354B2

公开(公告)日：2010-01-26

申请号：US11555381

申请日：2006-11-01

申请人： Tae Young Lee

发明人： Tae Young Lee

IPC分类号： H01L21/00

CPC分类号： H01L21/76801 ,  H01L21/76829 ,  H01L23/3192 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is a semiconductor device and a method of manufacturing a semiconductor device. A semiconductor device may include an insulating layer and a metal interconnection. An insulating layer may include a first layer including fluorine and a second layer including SRO (silicon rich oxide) having a dangling bond. A metal interconnection may be formed over the insulating layer.

摘要翻译： 公开了一种半导体器件和半导体器件的制造方法。 半导体器件可以包括绝缘层和金属互连。 绝缘层可以包括包含氟的第一层和包括具有悬挂键的SRO（富硅氧化物）的第二层。 可以在绝缘层上形成金属互连。

公开(公告)号：US20070155162A1

公开(公告)日：2007-07-05

申请号：US11644890

申请日：2006-12-26

申请人： Tae Young Lee

发明人： Tae Young Lee

IPC分类号： H01L21/4763

CPC分类号： H01L21/76837 ,  C23C16/402 ,  C23C16/505 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31053 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/76829

摘要： A method for forming a dual interlayer dielectric layer, which is capable of preventing an interlayer delamination phenomenon generated between an etch stop layer and an interlayer dielectric layer is provided. An interlayer dielectric layer of a dual structure is formed such that a first interlayer dielectric layer and a second interlayer dielectric layer are sequentially stacked on the etch stop layer. The etch stop layer is formed on a substrate, the substrate having a source/drain region and a gate formed therein. The dual interlayer dielectric layer is selectively etched, and a conductive material is deposited thereon, thereby forming a contact. The O3-TEOS layer and the PE-TEOS layer used as the first interlayer dielectric layer can relieve a compressive stress and improve adhesion force, respectively, thereby preventing the interlayer delamination phenomenon.

摘要翻译： 提供一种能够防止在蚀刻停止层和层间电介质层之间产生的层间分层现象的双层间电介质层的形成方法。 形成双结构的层间电介质层，使得第一层间介电层和第二层间电介质层依次层叠在蚀刻停止层上。 蚀刻停止层形成在衬底上，衬底具有源极/漏极区域和形成在其中的栅极。 选择性地蚀刻双层间介电层，并在其上沉积导电材料，从而形成接触。 用作第一层间电介质层的O 3层 - PEOS层和PE-TEOS层可以分别减轻压缩应力并提高粘合力，从而防止层间分层现象。

公开(公告)号：US06348415B1

公开(公告)日：2002-02-19

申请号：US09472556

申请日：1999-12-27

申请人： Tae Young Lee ,  Jae Suk Lee

发明人： Tae Young Lee ,  Jae Suk Lee

IPC分类号： H01L21302

CPC分类号： H01L21/31053 ,  H01L21/3143

摘要： This invention discloses a planarization method for semiconductor device. The planarization method includes the steps of: providing a semiconductor substrate in which metal patterns are formed with various pattern densities; depositing a porous oxide layer over the semiconductor substrate so as to cover the metal patterns; plasma-treating surface of the porous oxide layer; and polishing the plasma-treated porous oxide layer by chemical mechanical polishing.

摘要翻译： 本发明公开了一种半导体器件的平面化方法。 平面化方法包括以下步骤：提供其中以各种图案密度形成金属图案的半导体衬底; 在所述半导体衬底上沉积多孔氧化物层以覆盖所述金属图案; 多孔氧化物层的等离子体处理表面; 并通过化学机械抛光抛光等离子体处理的多孔氧化物层。

公开(公告)号：US08634818B2

公开(公告)日：2014-01-21

申请号：US13191363

申请日：2011-07-26

申请人： Tae Young Lee ,  Tae Yong Kim

发明人： Tae Young Lee ,  Tae Yong Kim

IPC分类号： H04M3/00

CPC分类号： H04W4/06 ,  G06F3/1423 ,  G06F3/1454 ,  H04L12/2809 ,  H04L12/2812 ,  H04L12/2814 ,  H04L2012/2849 ,  H04M1/72527 ,  H04M1/72544

摘要： A mobile terminal and control method to share content with a device and control the device are provide. The mobile terminal includes a communication unit to communicate with a host and the device; a search unit to receive content information and device information; an input unit to receive a content selection signal and a device selection signal; and a control unit to control the mobile terminal. The mobile terminal receives content information from a host and selects content to be outputted to a device selected from device information from the host. The mobile terminal controls the selected device using control commands transmitted to the selected device based on a control mode. If the control mode is not stored in the mobile terminal, the mobile terminal may receive the control mode from the host.

摘要翻译： 提供了一种与设备共享内容并控制设备的移动终端和控制方法。 移动终端包括与主机和设备通信的通信单元; 搜索单元，用于接收内容信息和设备信息; 输入单元，用于接收内容选择信号和设备选择信号; 以及控制单元来控制移动终端。 移动终端从主机接收内容信息，并从主机中选择要从设备信息中选择的设备输出要输出的内容。 移动终端使用基于控制模式发送到所选择的设备的控制命令来控制所选择的设备。 如果控制模式未被存储在移动终端中，则移动终端可以从主机接收控制模式。