摘要:
A method of fabricating a semiconductor device includes etching a stack of first-material layers and second-material layers alternately disposed one on another on a substrate. An upper portion of the stack is etched using an end point detection (EPD) signal of an etching reaction gas, and a function of an injection time of an etchant with respect to a depth of an opening is obtained while the upper portion of the stack is etched. A lower portion of the stack is etched using the obtained function.
摘要:
The invention provides a method of processing a substrate using multilayer processing sequences and Multi-Layer/Multi-Input/Multi-Output (MLMIMO) models and libraries that can include one or more masking layer creation procedures, one or more pre-processing measurement procedures, one or more Partial-Etch (P-E) procedures, one or more Final-Etch (F-E) procedures, and one or more post-processing measurement procedures.
摘要:
The invention provides a method of processing a substrate using multilayer processing sequences and Multi-Layer/Multi-Input/Multi-Output (MLMIMO) models and libraries that can include one or more masking layer creation procedures, one or more pre-processing measurement procedures, one or more Partial-Etch (P-E) procedures, one or more Final-Etch (F-E) procedures, and one or more post-processing measurement procedures.
摘要:
The present invention relates to an axle assembly of a wheel where a hub and a brake disk are integrally formed. An axle assembly of a wheel according to exemplary embodiments of the present invention may include: a wheel bearing assembly provided with a bearing inner shaft having a first inner raceway at an inner side thereof, an inner ring mounted at an outer side of the bearing inner shaft and having a second inner raceway, an outer ring having first and second outer raceways respectively corresponding to the first and second inner raceways and engaged to a knuckle, and bearings disposed between the first and second inner raceways and the first and second outer raceways; a hub for mounting the wheel, the hub being mounted at the outer side of the bearing inner shaft; and a brake disk integrally formed with the hub, wherein the bearing inner shaft is provided with a first stepped surface for mounting the inner ring and a second stepped surface for mounting the hub.
摘要:
The present invention relates to a method for genomic DNA rearrangements, and more particularly, to a method for deletion, duplication, inversion, replacement, or rearrangement of genomic DNA using pairs of site-specific nucleases targeting two or more sites in the genome, a cell in which genomic DNA is deleted, duplicated, inverted, replaced, or rearranged by the same method, and a method for expressing the site-specific nucleases in cells. Further, the present invention relates to a method for inserting synthetic DNA molecules into the genome using site-specific nucleases targeting a pre-determined site in the genome, a cell in which DNA insertion occurs by the same method, and a method for expressing the site-specific nucleases in cells.
摘要:
The invention provides a method of processing a wafer using multilayer processing sequences and Multi-Layer/Multi-Input/Multi-Output (MLMIMO) models and libraries that can include one or more measurement procedures, one or more Poly-Etch (P-E) sequences, and one or more metal-gate etch sequences. The MLMIMO process control uses dynamically interacting behavioral modeling between multiple layers and/or multiple process steps. The multiple layers and/or the multiple process steps can be associated with the creation of lines, trenches, vias, spacers, contacts, and gate structures that can be created using isotropic and/or anisotropic etch processes.
摘要:
The invention provides a method of processing a wafer using multilayer processing sequences and Multi-Layer/Multi-Input/Multi-Output (MLMIMO) models and libraries that can include one or more measurement procedures, one or more Poly-Etch (P-E) sequences, and one or more metal-gate etch sequences. The MLMIMO process control uses dynamically interacting behavioral modeling between multiple layers and/or multiple process steps. The multiple layers and/or the multiple process steps can be associated with the creation of lines, trenches, vias, spacers, contacts, and gate structures that can be created using isotropic and/or anisotropic etch processes.
摘要:
There is provided an image change detecting machine and a method for easily monitoring the moving of subjects by using character generator. The image change detecting machine comprises: a video camera for taking a photograph and outputting the video signal for it; a synchronous signal separating part for separating and outputting the video signal from the video camera into a vertical synchronous signal and a horizontal synchronous signal; a monitor for displaying the video signal from the video camera; a character generator for outputting letter signal the synchronousness of which matches with that of the video signal received from the video camera based on the synchronous signal applied from the synchronous signal separating part; an analog switches for overlapping the video signal from the video camera and the letter signal from the character generator and outputting it to the monitor, and detecting the change of the video signal at where the frequency of the video signal from the video camera and the frequency of the letter signal from the character generator match each other and outputting the detecting signal corresponding to this; a comparator for comparing the detecting signal from the analog switches with the standard signal and outputting the control signal corresponding to this; a main controlling part for determining the letter signal output from the character generator and controlling its location, and outputting the alarm signal in accordance with the control signal from the comparator; a buffer for stabilizing the control signal from the comparator and applying it to the main controlling part; and an alarm generating part for generating or cutting off alarm in accordance with the alarm signal from the main controlling part.
摘要:
The invention provides a method of processing a wafer using multilayer processing sequences and Multi-Layer/Multi-Input/Multi-Output (MLMIMO) models and libraries that can include one or more measurement procedures, one or more Poly-Etch (P-E) sequences, and one or more metal-gate etch sequences. The MLMIMO process control uses dynamically interacting behavioral modeling between multiple layers and/or multiple process steps. The multiple layers and/or the multiple process steps can be associated with the creation of lines, trenches, vias, spacers, contacts, and gate structures that can be created using isotropic and/or anisotropic etch processes.
摘要:
A semiconductor device and a method of fabricating the same are disclosed in the present invention. The semiconductor device includes a semiconductor substrate, first and second gate insulating layers on the semiconductor layer, the first and second insulating layer having different dielectric constants, and a gate electrode on the first and second gate insulating layers.