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公开(公告)号:US20240266316A1
公开(公告)日:2024-08-08
申请号:US18328982
申请日:2023-06-05
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Wei-Yu Chen , Ching-Hua Hsieh , Hsiu-Jen Lin , Hao-Jan Pei , Chao-Wei Chiu , Hsin Liang Chen
IPC: H01L23/00
CPC classification number: H01L24/73 , H01L24/11 , H01L24/16 , H01L24/27 , H01L24/32 , H01L24/81 , H01L24/92 , H01L2224/1184 , H01L2224/16145 , H01L2224/2784 , H01L2224/32145 , H01L2224/73204 , H01L2224/81203 , H01L2224/9211
Abstract: An embodiment is a device including a substrate comprising conductive pads, a package component bonded to the conductive pads of the substrate with solder connectors, the package component comprising an integrated circuit die, the integrated circuit die comprising die connectors, one of the solder connectors coupled to each of the die connectors and a corresponding conductive pad of the substrate, a first dielectric layer laterally surrounding each of the die connectors and a portion of the solder connectors, and a second dielectric layer being between the first dielectric layer and the substrate, the second dielectric layer laterally surrounding each of the conductive pads of the substrate.
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公开(公告)号:US11894312B2
公开(公告)日:2024-02-06
申请号:US17869286
申请日:2022-07-20
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Wei-Yu Chen , Chun-Chih Chuang , Kuan-Lin Ho , Yu-Min Liang , Jiun Yi Wu
IPC: H01L23/538 , H01L21/48 , H01L21/56 , H01L21/683 , H01L23/31 , H01L23/00
CPC classification number: H01L23/5389 , H01L21/4853 , H01L21/4857 , H01L21/565 , H01L21/568 , H01L21/6835 , H01L23/3128 , H01L23/5383 , H01L23/5386 , H01L24/19 , H01L24/20 , H01L2221/68372 , H01L2224/214 , H01L2924/1431 , H01L2924/1434 , H01L2924/19106
Abstract: A package includes an interposer structure free of any active devices. The interposer structure includes an interconnect device; a dielectric film surrounding the interconnect device; and first metallization pattern bonded to the interconnect device. The package further includes a first device die bonded to an opposing side of the first metallization pattern as the interconnect device and a second device die bonded to a same side of the first metallization pattern as the first device die. The interconnect device electrically connects the first device die to the second device die.
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公开(公告)号:US20240021467A1
公开(公告)日:2024-01-18
申请号:US18363359
申请日:2023-08-01
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chen-Hua Yu , Wei-Yu Chen , Jiun Yi Wu , Chung-Shi Liu , Chien-Hsun Lee
IPC: H01L21/768 , H01L23/538 , H01L21/56 , H01L23/31
CPC classification number: H01L21/76802 , H01L23/5384 , H01L21/56 , H01L23/31 , H01L23/5386 , H01L2021/60022
Abstract: A method includes attaching interconnect structures to a carrier substrate, wherein each interconnect structure includes a redistribution structure; a first encapsulant on the redistribution structure; and a via extending through the encapsulant to physically and electrically connect to the redistribution structure; depositing a second encapsulant on the interconnect structures, wherein adjacent interconnect structures are laterally separated by the second encapsulant; after depositing the second encapsulant, attaching a first core substrate to the redistribution structure of at least one interconnect structure, wherein the core substrate is electrically connected to the redistribution structure; and attaching semiconductor devices to the interconnect structures, wherein the semiconductor devices are electrically connected to the vias of the interconnect structures.
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公开(公告)号:US11830746B2
公开(公告)日:2023-11-28
申请号:US17141835
申请日:2021-01-05
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Wei-Yu Chen , Hao-Jan Pei , Hsuan-Ting Kuo , Chih-Chiang Tsao , Jen-Jui Yu , Philip Yu-Shuan Chung , Chia-Lun Chang , Hsiu-Jen Lin , Ching-Hua Hsieh
CPC classification number: H01L21/50 , B23K1/0016 , H01L21/4853 , H01L24/10 , H01L2021/60135 , H01L2021/60225
Abstract: A method includes forming regions of solder paste on a redistribution structure, wherein the solder paste has a first melting temperature; forming solder bumps on an interconnect structure, wherein the solder bumps have a second melting temperature that is greater than the first melting temperature; placing the solder bumps on the regions of solder paste; performing a first reflow process at a first reflow temperature for a first duration of time, wherein the first reflow temperature is less than the second melting temperature; and after performing the first reflow process, performing a second reflow process at a second reflow temperature for a second duration of time, wherein the second reflow temperature is greater than the second melting temperature.
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公开(公告)号:US20220367408A1
公开(公告)日:2022-11-17
申请号:US17815713
申请日:2022-07-28
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Wei-Yu Chen , Chia-Shen Cheng , Hao-Jan Pei , Philip Yu-Shuan Chung , Kuei-Wei Huang , Yu-Peng Tsai , Hsiu-Jen Lin , Ching-Hua Hsieh , Chen-Hua Yu , Chung-Shi Liu
IPC: H01L23/00 , H01L23/31 , H01L23/498 , H01L21/56
Abstract: A method includes performing a first laser shot on a first portion of a top surface of a first package component. The first package component is over a second package component, and a first solder region between the first package component and the second package component is reflowed by the first laser shot. After the first laser shot, a second laser shot is performed on a second portion of the top surface of the first package component. A second solder region between the first package component and the second package component is reflowed by the second laser shot.
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公开(公告)号:US11469215B2
公开(公告)日:2022-10-11
申请号:US16801395
申请日:2020-02-26
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor: Wei-Yu Chen , An-Jhih Su
IPC: H01L25/065 , H01L21/56 , H01L25/00 , H01L23/00 , H01L21/48 , H01L23/538 , H01L25/03 , H01L23/498 , H01L23/31
Abstract: A chip package structure is provided. The chip package structure includes a wiring structure. The chip package structure includes a first chip structure over the wiring structure. The chip package structure includes a first molding layer surrounding the first chip structure. The chip package structure includes a second chip structure over the first chip structure and the first molding layer. The chip package structure includes a second molding layer surrounding the second chip structure and over the first chip structure and the first molding layer. The chip package structure includes a third chip structure over the second chip structure and the second molding layer. The chip package structure includes a third molding layer surrounding the third chip structure and over the second chip structure and the second molding layer. The chip package structure includes a fourth molding layer surrounding the second molding layer and the third molding layer.
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公开(公告)号:US20220028823A1
公开(公告)日:2022-01-27
申请号:US16935465
申请日:2020-07-22
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chia-Shen Cheng , Wei-Yu Chen , Philip Yu-Shuan Chung , Hsiu-Jen Lin , Ching-Hua Hsieh , Chen-Hua Yu
IPC: H01L23/00
Abstract: A method for bonding semiconductor substrates includes placing a die on a substrate and performing a heating process on the die and the substrate to bond the respective first connectors with the respective second connectors. Respective first connectors of a plurality of first connectors on the die contact respective second connectors of a plurality of second connectors on the substrate. The heating process includes placing a mask between a laser generator and the substrate and performing a laser shot. The mask includes a masking layer and a transparent layer. Portions of the masking layer are opaque. The laser passes through a first gap in the masking layer and through the transparent layer to heat a first portion of a top side of the die opposite the substrate.
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公开(公告)号:US20210193485A1
公开(公告)日:2021-06-24
申请号:US17194721
申请日:2021-03-08
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chen-Hua Yu , An-Jhih Su , Chi-Hsi Wu , Der-Chyang Yeh , Hsien-Wei Chen , Wei-Yu Chen
IPC: H01L21/56 , H01L23/00 , H01L23/495 , H01L25/18 , H01L21/683 , H01L23/498
Abstract: A semiconductor device includes a first die extending through a molding compound layer, a first dummy die having a bottom embedded in the molding compound layer, wherein a height of the first die is greater than a height of the first dummy die, and an interconnect structure over the molding compound layer, wherein a first metal feature of the interconnect structure is electrically connected to the first die and a second metal feature of the interconnect structure is over the first dummy die and extends over a sidewall of the first dummy die.
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公开(公告)号:US20210066263A1
公开(公告)日:2021-03-04
申请号:US16795523
申请日:2020-02-19
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Wei-Yu Chen , An-Jhih Su , Li-Hsien Huang , Tien-Chung Yang , Ming-Shih Yeh
Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes a semiconductor die an insulating encapsulation laterally covering the semiconductor die. The semiconductor die includes a semiconductor substrate, a plurality of conductive pads distributed over the semiconductor substrate, a plurality of conductive vias disposed on and electrically connected to the conductive pads, and a dielectric layer disposed over the semiconductor substrate and spaced the conductive vias apart from one another. A sidewall of the dielectric layer extends along sidewalls of the conductive vias, the conductive vias are recessed from a top surface of the dielectric layer, and a sloped surface of the dielectric layer is connected to the top surface of the dielectric layer and the sidewall of the dielectric layer.
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10.
公开(公告)号:US10903090B2
公开(公告)日:2021-01-26
申请号:US16414763
申请日:2019-05-16
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Cheng-Ting Chen , Ching-Hua Hsieh , Hsiu-Jen Lin , Hao-Jan Pei , Wei-Yu Chen , Chia-Lun Chang , Chia-Shen Cheng , Cheng-Shiuan Wong
IPC: H01L21/02 , H01L21/56 , H01L21/78 , H01L23/28 , H01L23/544
Abstract: A method of forming a package structure includes the following processes. A die is attached to a polymer layer. An encapsulant is formed over the polymer layer to encapsulate sidewalls of the die. A RDL structure is formed on the encapsulant and the die. A conductive terminal is electrically connected to the die through the RDL structure. A light transmitting film is formed on the polymer layer. An alignment process is performed, and the alignment process uses an optical equipment to see through the light transmitting film to capture the alignment information included in the polymer layer. A singulating process is performed to singulate the package structure according to the alignment information.
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