公开(公告)号：US20190164792A1

公开(公告)日：2019-05-30

申请号：US15879651

申请日：2018-01-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Powen HUANG ,  Yao-Yuan SHANG ,  Kuo-Shu TSENG ,  Yen-Yu CHEN ,  Chun-Chih LIN ,  Yi-Ming DAI

IPC: H01L21/67 ,  H01L21/677 ,  H01L21/673 ,  H01L21/02 ,  G01D7/00 ,  G01D5/00

Abstract: A method for fault detection in a fabrication facility is provided. The method includes moving a wafer carrier using a transportation apparatus. The method further includes measuring an environmental condition within the wafer carrier or around the wafer carrier using a metrology tool positioned on the wafer carrier during the movement of the wafer carrier. The method also includes issuing a warning when the detected environmental condition is outside a range of acceptable values.

公开(公告)号：US20190163070A1

公开(公告)日：2019-05-30

申请号：US15877646

申请日：2018-01-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yao-Yuan SHANG ,  Kuo-Shu TSENG ,  Yen-Yu CHEN ,  Chun-Chih LIN ,  Yi-Ming DAI

IPC: G03F7/20

CPC classification number: G03F7/7085 ,  G03F7/70508 ,  G03F7/70733 ,  G03F7/70883

Abstract: A method for fault detection in a fabrication system is provided. The method includes transferring a reticle carrier containing a reticle from an original position to a destination position. The method further includes detecting environmental condition in the reticle carrier during the transfer of the reticle carrier using a metrology tool that is positioned at the reticle carrier. The method also includes issuing a warning when the detected environmental condition is outside a range of acceptable values.

公开(公告)号：US20190096834A1

公开(公告)日：2019-03-28

申请号：US15719370

申请日：2017-09-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih Wei BIH ,  Chun-Chih LIN ,  Sheng-Wei YEH ,  Yen-Yu CHEN ,  Chih-Wei LIN ,  Wen-Hao CHENG

IPC: H01L23/00

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L2224/0345 ,  H01L2224/03614 ,  H01L2224/03622 ,  H01L2224/0391 ,  H01L2224/05025 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05647 ,  H01L2924/04953 ,  H01L2924/00014

Abstract: The present disclosure describes an bonding pad formation method that incorporates an tantalum (Ta) conductive layer to block mobile ionic charges generated during the aluminum-copper (AlCu) metal fill deposition. For example, the method includes forming one or more interconnect layers over a substrate and forming a dielectric over a top interconnect layer of the one or more interconnect layers. A first recess is formed in the dielectric to expose a line or a via from the top interconnect layer. A conductive layer is formed in the first recess to form a second recess that is smaller than the first recess. A barrier metal layer is formed in the second recess to form a third recess that is smaller than the second recess. A metal is formed to fill the third recess.

公开(公告)号：US20200251365A1

公开(公告)日：2020-08-06

申请号：US16857446

申请日：2020-04-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Powen HUANG ,  Yao-Yuan SHANG ,  Kuo-Shu TSENG ,  Yen-Yu CHEN ,  Chun-Chih LIN ,  Yi-Ming DAI

IPC: H01L21/67 ,  H01L21/677 ,  H01L21/673 ,  H01L21/02 ,  G01D7/00 ,  G01D5/00

Abstract: A method for fault detection in a fabrication facility is provided. The method includes moving a wafer carrier along a predetermined path multiple times using a transportation apparatus. The method also includes collecting data associated with an environmental condition within the wafer carrier or around the wafer carrier using a metrology tool on the predetermined path in a previous movement of the transportation apparatus. The method further includes measuring the environmental condition within the wafer carrier or around the wafer carrier using the metrology tool during the movement of the wafer carrier. In addition, the method includes issuing a warning when the measured environmental condition is outside a range of acceptable values. The range of acceptable values is derived from the data collected in the previous movement of the transportation apparatus.

公开(公告)号：US20200066538A1

公开(公告)日：2020-02-27

申请号：US16670107

申请日：2019-10-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Han-Wen LIAO ,  Jun Xiu LIU ,  Chun-Chih LIN

IPC: H01L21/306 ,  H01L21/76 ,  H01L21/67 ,  H01L21/66 ,  H01L21/762 ,  H01L21/3105

Abstract: Methods for enhancing a surface topography of a structure formed on a substrate are provided. In one example, the method includes performing a polishing process on a substrate having a shallow trench isolation structure and a diffusion region, performing a surface topography enhancing process to enlarge a defect in at least one of the shallow trench isolation structure and the diffusion region, inspecting at least one of the shallow trench isolation structure and the diffusion region to detect the enlarged defect, and adjusting a parameter of the polishing process in response to detecting the enlarged defect.

公开(公告)号：US20180372665A1

公开(公告)日：2018-12-27

申请号：US15689195

申请日：2017-08-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yung-Chang HUANG ,  Jui-Mu CHO ,  Chien-Hsun PAN ,  Chun-Chih LIN

IPC: G01N27/26 ,  C25D13/18 ,  C25D13/02 ,  H01L21/66

CPC classification number: G01N27/26 ,  C25B11/0473 ,  C25D3/38 ,  C25D13/02 ,  C25D13/18 ,  C25D21/14 ,  C25D21/18 ,  G01N27/4166 ,  H01L22/10

Abstract: Detection methods for an electroplating process are provided. A detection method includes immersing a substrate into an electrolyte solution to perform an electroplating process. The electrolyte solution includes an additive agent. The detection method also includes immersing a detection device into the electrolyte solution. The detection method further includes applying a first alternating current (AC) or direct current (DC) to the detection device to detect the concentration of the additive agent. In addition, the detection method includes applying a combination of a second AC and a second DC to the detection device to inspect the electrolyte solution. An impurity is detected in the electrolyte solution. The detection method also includes replacing the electrolyte solution containing the impurity with another electrolyte solution.