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公开(公告)号：US11003091B2
公开(公告)日：2021-05-11
申请号：US16740256
申请日：2020-01-10
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Hsueh-Yi Chung , Yung-Cheng Chen , Fei-Gwo Tsai , Chi-Hung Liao , Shih-Chi Fu , Wei-Ti Hsu , Jui-Ping Chuang , Tzong-Sheng Chang , Kuei-Shun Chen , Meng-Wei Chen
Abstract: A method for exposing a wafer substrate includes forming a reticle having a device pattern. A relative orientation between the device pattern and a mask field of an exposure tool is determined based on mask field utilization. The reticle is loaded on the exposure tool. The wafer substrate is rotated based on an orientation of the device pattern. Radiation is projected through the reticle onto the rotated wafer substrate by the exposure tool, thereby imaging the device pattern onto the rotated wafer substrate.
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Patent Agency Ranking
2.发明授权公开(公告)号：US10073354B2
公开(公告)日：2018-09-11
申请号：US14706871
申请日：2015-05-07
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Hsueh-Yi Chung , Yung-Cheng Chen , Fei-Gwo Tsai , Chi-Hung Liao , Shih-Chi Fu , Wei-Ti Hsu , Jui-Ping Chuang , Tzong-Sheng Chang , Kuei-Shun Chen , Meng-Wei Chen
CPC classification number: G03F7/70433 , G03F1/50 , G03F1/68 , G03F1/70 , G03F1/78 , G03F7/20 , G03F7/70141 , G03F7/70158 , G03F7/70716 , H01L22/30
Abstract: A method for exposing a wafer substrate includes forming a reticle having a device pattern. A relative orientation between the device pattern and a mask field of an exposure tool is determined based on mask field utilization. The reticle is loaded on the exposure tool. The wafer substrate is rotated based on an orientation of the device pattern. Radiation is projected through the reticle onto the rotated wafer substrate by the exposure tool, thereby imaging the device pattern onto the rotated wafer substrate.
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公开(公告)号：US09841687B2
公开(公告)日：2017-12-12
申请号：US14798563
申请日：2015-07-14
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yung-Yao Lee , Heng-Hsin Liu , Jui-Chun Peng , Yung-Cheng Chen
CPC classification number: G03F7/70633
Abstract: The present disclosure relates to a method of semiconductor processing. The method includes, receiving a first wafer having a photoresist coating on a face of the first wafer. An exposure unit is used to perform a first number of radiation exposures on the photoresist coating, thereby forming an exposed photoresist coating. The exposed photoresist coating is developed, thereby forming a developed photoresist coating. An OVL measurement zone pattern is selected from a number of different, pre-determined OVL measurement zone patterns based on at least one of: the first number of radiation exposures performed on the first wafer or a previous number of radiation exposures performed on a previously processed wafer, which was processed before the first wafer. A number of OVL measurements are performed on the developed photoresist coating within the selected OVL measurement zone pattern.
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公开(公告)号：US20170017166A1
公开(公告)日：2017-01-19
申请号：US14798563
申请日：2015-07-14
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yung-Yao Lee , Heng-Hsin Liu , Jui-Chun Peng , Yung-Cheng Chen
CPC classification number: G03F7/70633
Abstract: The present disclosure relates to a method of semiconductor processing. The method includes, receiving a first wafer having a photoresist coating on a face of the first wafer. An exposure unit is used to perform a first number of radiation exposures on the photoresist coating, thereby forming an exposed photoresist coating. The exposed photoresist coating is developed, thereby forming a developed photoresist coating. An OVL measurement zone pattern is selected from a number of different, pre-determined OVL measurement zone patterns based on at least one of: the first number of radiation exposures performed on the first wafer or a previous number of radiation exposures performed on a previously processed wafer, which was processed before the first wafer. A number of OVL measurements are performed on the developed photoresist coating within the selected OVL measurement zone pattern.
Abstract translation: 本公开涉及一种半导体处理方法。 该方法包括：在第一晶片的表面上接收具有光致抗蚀剂涂层的第一晶片。 曝光单元用于在光致抗蚀剂涂层上执行第一数量的辐射照射，由此形成曝光的光致抗蚀剂涂层。 曝光的光致抗蚀剂涂层被显影，从而形成显影的光刻胶涂层。 基于以下至少一个，从多个不同的预定OVL测量区域图案中选择OVL测量区域图案：在第一晶片上执行的第一数量的辐射曝光或对先前处理的OVL测量区域图案执行的先前数量的辐射曝光 晶片，其在第一晶片之前被处理。 在所选择的OVL测量区域图案中对所开发的光致抗蚀剂涂层进行多个OVL测量。
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公开(公告)号：US11940737B2
公开(公告)日：2024-03-26
申请号：US17315087
申请日：2021-05-07
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Hsueh-Yi Chung , Yung-Cheng Chen , Fei-Gwo Tsai , Chi-Hung Liao , Shih-Chi Fu , Wei-Ti Hsu , Jui-Ping Chuang , Tzong-Sheng Chang , Kuei-Shun Chen , Meng-Wei Chen
CPC classification number: G03F7/70433 , G03F1/50 , G03F1/68 , G03F1/70 , G03F1/78 , G03F7/20 , G03F7/70141 , G03F7/70158 , G03F7/70716 , H01L22/30
Abstract: A method includes receiving a device design layout and a scribe line design layout surrounding the device design layout. The device design layout and the scribe line design layout are rotated in different directions. An optical proximity correction (OPC) process is performed on the rotated device design layout and the rotated scribe line design layout. A reticle includes the device design layout and the scribe line design layout is formed after performing the OPC process.
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公开(公告)号：US10534272B2
公开(公告)日：2020-01-14
申请号：US16127017
申请日：2018-09-10
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Hsueh-Yi Chung , Yung-Cheng Chen , Fei-Gwo Tsai , Chi-Hung Liao , Shih-Chi Fu , Wei-Ti Hsu , Jui-Ping Chuang , Tzong-Sheng Chang , Kuei-Shun Chen , Meng-Wei Chen
Abstract: A method for exposing a wafer substrate includes forming a reticle having a device pattern. A relative orientation between the device pattern and a mask field of an exposure tool is determined based on mask field utilization. The reticle is loaded on the exposure tool. The wafer substrate is rotated based on an orientation of the device pattern. Radiation is projected through the reticle onto the rotated wafer substrate by the exposure tool, thereby imaging the device pattern onto the rotated wafer substrate.
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