公开(公告)号：US11923396B2

公开(公告)日：2024-03-05

申请号：US17723127

申请日：2022-04-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Wei Hsu ,  Tsai-Hao Hung ,  Chung-Yu Lin ,  Ying-Hsun Chen

IPC: H01L27/146 ,  H01L31/0232 ,  H01L31/0236 ,  H01L31/028 ,  H01L31/18 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/032

CPC classification number: H01L27/14643 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14685 ,  H01L31/02327 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/1804 ,  H01L27/14612 ,  H01L27/14636 ,  H01L31/02966 ,  H01L31/03046 ,  H01L31/0324 ,  H01L31/1808 ,  H01L31/1812 ,  H01L31/1832 ,  H01L31/1844

Abstract: An integrated circuit includes a photodetector. The photodetector includes one or more dielectric structures positioned in a trench in a semiconductor substrate. The photodetector includes a photosensitive material positioned in the trench and covering the one or more dielectric structures. A dielectric layer covers the photosensitive material. The photosensitive material has an index of refraction that is greater than the indices of refraction of the dielectric structures and the dielectric layer.

公开(公告)号：US20220310679A1

公开(公告)日：2022-09-29

申请号：US17805573

申请日：2022-06-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Yu Liao ,  Tsai-Hao Hung ,  Ying-Hsun Chen

IPC: H01L27/146 ,  G01J1/44 ,  H04N5/369

Abstract: The present disclosure describes a method for the formation of mirror micro-structures on radiation-sensing regions of image sensor devices. The method includes forming an opening within a front side surface of a substrate; forming a conformal implant layer on bottom and sidewall surfaces of the opening; growing a first epitaxial layer on the bottom and the sidewall surfaces of the opening; depositing a second epitaxial layer on the first epitaxial layer to fill the opening, where the second epitaxial layer forms a radiation-sensing region. The method further includes depositing a stack on exposed surfaces of the second epitaxial layer, where the stack includes alternating pairs of a high-refractive index material layer and a low-refractive index material layer.

公开(公告)号：US11355544B2

公开(公告)日：2022-06-07

申请号：US16830966

申请日：2020-03-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shih-Yu Liao ,  Tsai-Hao Hung ,  Ying-Hsun Chen

IPC: H01L27/14 ,  H01L27/146 ,  G01J1/44 ,  H04N5/369

Abstract: The present disclosure describes a method for the formation of mirror micro-structures on radiation-sensing regions of image sensor devices. The method includes forming an opening within a front side surface of a substrate; forming a conformal implant layer on bottom and sidewall surfaces of the opening; growing a first epitaxial layer on the bottom and the sidewall surfaces of the opening; depositing a second epitaxial layer on the first epitaxial layer to fill the opening, where the second epitaxial layer forms a radiation-sensing region. The method further includes depositing a stack on exposed surfaces of the second epitaxial layer, where the stack includes alternating pairs of a high-refractive index material layer and a low-refractive index material layer.

公开(公告)号：US11309347B2

公开(公告)日：2022-04-19

申请号：US16788145

申请日：2020-02-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Wei Hsu ,  Tsai-Hao Hung ,  Chung-Yu Lin ,  Ying-Hsun Chen

IPC: H01L27/146 ,  H01L31/18 ,  H01L31/028 ,  H01L31/0236 ,  H01L31/0232 ,  H01L31/0304 ,  H01L31/032 ,  H01L31/0296

Abstract: An integrated circuit includes a photodetector. The photodetector includes one or more dielectric structures positioned in a trench in a semiconductor substrate. The photodetector includes a photosensitive material positioned in the trench and covering the one or more dielectric structures. A dielectric layer covers the photosensitive material. The photosensitive material has an index of refraction that is greater than the indices of refraction of the dielectric structures and the dielectric layer.

公开(公告)号：US11227958B2

公开(公告)日：2022-01-18

申请号：US16863989

申请日：2020-04-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tao-Cheng Liu ,  Tsai-Hao Hung ,  Ying-Hsun Chen

IPC: H01L31/18 ,  H01L31/0232 ,  H01L31/0352 ,  H01L31/054 ,  H01L31/02 ,  H01L31/04

Abstract: An integrated circuit includes a photodetector. The photodetector includes a circular optical grating formed in an annular trench in a semiconductor substrate. The circular optical grating includes dielectric fins and photosensitive fins positioned in the annular trench. The circular optical grating is configured to receive incident light and to direct the incident light around the annular trench through the dielectric fins and the photosensitive fins until the light is absorbed by one of the photosensitive fins.

公开(公告)号：US09659874B2

公开(公告)日：2017-05-23

申请号：US14883545

申请日：2015-10-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Fu-Chiang Kuo ,  Ying-Hsun Chen ,  Shih-Chi Kuo ,  Tsung-Hsien Lee

IPC: H01L29/06 ,  H01L23/544 ,  H01L21/308 ,  H01L21/306

CPC classification number: H01L23/544 ,  H01L21/30604 ,  H01L21/3081 ,  H01L21/3083 ,  H01L21/3085 ,  H01L21/762 ,  H01L21/78

Abstract: A method of forming a deep trench in a semiconductor substrate includes: forming a first mask pattern over the semiconductor substrate, in which the first mask pattern has a first opening exposing a portion of the semiconductor substrate; forming a second mask pattern over the first mask pattern, in which the second mask pattern has a second opening substantially aligned with the first opening to expose the portion of the semiconductor substrate, and the second opening has a width greater than a width of the first opening to further expose a portion of the first mask pattern; and removing the portion of the semiconductor substrate, the portion of first mask pattern and another portion of the semiconductor substrate beneath the portion of the first mask pattern to form the deep trench.

公开(公告)号：US11955501B2

公开(公告)日：2024-04-09

申请号：US17805573

申请日：2022-06-06

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shih-Yu Liao ,  Tsai-Hao Hung ,  Ying-Hsun Chen

IPC: H01L27/146 ,  G01J1/44 ,  H04N25/70

CPC classification number: H01L27/1464 ,  G01J1/44 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14685 ,  H04N25/70 ,  G01J2001/448

Abstract: The present disclosure describes a method for the formation of mirror micro-structures on radiation-sensing regions of image sensor devices. The method includes forming an opening within a front side surface of a substrate; forming a conformal implant layer on bottom and sidewall surfaces of the opening; growing a first epitaxial layer on the bottom and the sidewall surfaces of the opening; depositing a second epitaxial layer on the first epitaxial layer to fill the opening, where the second epitaxial layer forms a radiation-sensing region. The method further includes depositing a stack on exposed surfaces of the second epitaxial layer, where the stack includes alternating pairs of a high-refractive index material layer and a low-refractive index material layer.

公开(公告)号：US11688754B2

公开(公告)日：2023-06-27

申请号：US16867873

申请日：2020-05-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tsai-Hao Hung ,  Tao-Cheng Liu ,  Ying-Hsun Chen

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/1462 ,  H01L27/1464 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14685

Abstract: Photonic devices and methods having an increased quantum effect length are provided. In some embodiments, a photonic device includes a substrate having a first surface. A cavity extends into the substrate from the first surface to a second surface. A semiconductor layer is disposed on the second surface in the cavity of the substrate, and a cover layer is disposed on the semiconductor layer. The semiconductor layer is configured to receive incident radiation through the substrate and to totally internally reflect the radiation at an interface between the semiconductor layer and the cover layer.