公开(公告)号：US20210090906A1

公开(公告)日：2021-03-25

申请号：US17099180

申请日：2020-11-16

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chen-Yu Tsai ,  Tsung-Shang Wei ,  Yu-Sheng Lin ,  Wen-Chih Chiou ,  Shin-Puu Jeng

IPC分类号： H01L21/56 ,  H01L25/065 ,  H01L25/00 ,  H01L23/60 ,  H01L21/48 ,  H01L23/538 ,  H01L23/00 ,  H01L21/683 ,  H01L23/16 ,  H01L23/31 ,  H01L23/29 ,  H01L23/498

摘要： A method of manufacturing a semiconductor device includes bonding a first semiconductor die and a second semiconductor die to a first substrate, forming a conductive layer over the first semiconductor die, the second semiconductor die, and the first substrate, applying an encapsulant over the conductive layer, and removing a portion of the encapsulant, wherein the removing the portion of the encapsulant exposes the conductive layer.

公开(公告)号：US11990430B2

公开(公告)日：2024-05-21

申请号：US17186742

申请日：2021-02-26

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chen-Yu Tsai ,  Ku-Feng Yang ,  Wen-Chih Chiou

IPC分类号： H01L23/00

CPC分类号： H01L24/03 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/08 ,  H01L24/32 ,  H01L2224/03013 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0355 ,  H01L2224/03612 ,  H01L2224/03622 ,  H01L2224/0381 ,  H01L2224/05083 ,  H01L2224/05084 ,  H01L2224/05546 ,  H01L2224/05564 ,  H01L2224/08145 ,  H01L2224/08225 ,  H01L2224/2781 ,  H01L2224/27831 ,  H01L2224/29006 ,  H01L2224/29027 ,  H01L2224/29028 ,  H01L2224/32145 ,  H01L2224/32225

摘要： A method includes forming a conductive pad over an interconnect structure of a wafer, forming a capping layer over the conductive pad, forming a dielectric layer covering the capping layer, and etching the dielectric layer to form an opening in the dielectric layer. The capping layer is exposed to the opening. A wet-cleaning process is then performed on the wafer. During the wet-cleaning process, a top surface of the capping layer is exposed to a chemical solution used for performing the wet-cleaning process. The method further includes depositing a conductive diffusion barrier extending into the opening, and depositing a conductive material over the conductive diffusion barrier.

公开(公告)号：US20230387051A1

公开(公告)日：2023-11-30

申请号：US18446028

申请日：2023-08-08

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chen-Yu Tsai ,  Ku-Feng Yang ,  Wen-Chih Chiou

IPC分类号： H01L23/00

CPC分类号： H01L24/03 ,  H01L24/29 ,  H01L24/27 ,  H01L24/05 ,  H01L2224/27831 ,  H01L2224/03622 ,  H01L2224/03013 ,  H01L2224/0381 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/03612 ,  H01L2224/0355 ,  H01L2224/05084 ,  H01L2224/05083 ,  H01L2224/05546 ,  H01L2224/05564 ,  H01L2224/29006 ,  H01L2224/29028 ,  H01L2224/29027 ,  H01L24/08 ,  H01L24/32 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/08145 ,  H01L2224/08225 ,  H01L2224/2781

摘要： A method includes forming a conductive pad over an interconnect structure of a wafer, forming a capping layer over the conductive pad, forming a dielectric layer covering the capping layer, and etching the dielectric layer to form an opening in the dielectric layer. The capping layer is exposed to the opening. A wet-cleaning process is then performed on the wafer. During the wet-cleaning process, a top surface of the capping layer is exposed to a chemical solution used for performing the wet-cleaning process. The method further includes depositing a conductive diffusion barrier extending into the opening, and depositing a conductive material over the conductive diffusion barrier.

公开(公告)号：US12132016B2

公开(公告)日：2024-10-29

申请号：US18446028

申请日：2023-08-08

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chen-Yu Tsai ,  Ku-Feng Yang ,  Wen-Chih Chiou

IPC分类号： H01L23/00

CPC分类号： H01L24/03 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/08 ,  H01L24/32 ,  H01L2224/03013 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0355 ,  H01L2224/03612 ,  H01L2224/03622 ,  H01L2224/0381 ,  H01L2224/05083 ,  H01L2224/05084 ,  H01L2224/05546 ,  H01L2224/05564 ,  H01L2224/08145 ,  H01L2224/08225 ,  H01L2224/2781 ,  H01L2224/27831 ,  H01L2224/29006 ,  H01L2224/29027 ,  H01L2224/29028 ,  H01L2224/32145 ,  H01L2224/32225

摘要： A method includes forming a conductive pad over an interconnect structure of a wafer, forming a capping layer over the conductive pad, forming a dielectric layer covering the capping layer, and etching the dielectric layer to form an opening in the dielectric layer. The capping layer is exposed to the opening. A wet-cleaning process is then performed on the wafer. During the wet-cleaning process, a top surface of the capping layer is exposed to a chemical solution used for performing the wet-cleaning process. The method further includes depositing a conductive diffusion barrier extending into the opening, and depositing a conductive material over the conductive diffusion barrier.

公开(公告)号：US20230317648A1

公开(公告)日：2023-10-05

申请号：US17740618

申请日：2022-05-10

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chen-Yu Tsai ,  Ku-Feng Yang ,  Tsang-Jiuh Wu ,  Wen-Chih Chiou

IPC分类号： H01L23/00

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/06 ,  H01L24/08 ,  H01L24/80 ,  H01L2224/0391 ,  H01L2224/05009 ,  H01L2224/05011 ,  H01L2224/05015 ,  H01L2224/05017 ,  H01L2224/05083 ,  H01L2224/05091 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05555 ,  H01L2224/05557 ,  H01L2224/0603 ,  H01L2224/06102 ,  H01L2224/08146 ,  H01L2224/08147 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2924/3511 ,  H01L2924/37001

摘要： Semiconductor devices and methods of manufacture are presented which form metallization layers over a semiconductor substrate; form a first pad over the metallization layers; deposit one or more passivation layers over the first pad; and form a first bond pad via through the one or more passivation layers and at least partially through the first pad.

公开(公告)号：US20220238466A1

公开(公告)日：2022-07-28

申请号：US17186742

申请日：2021-02-26

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chen-Yu Tsai ,  Ku-Feng Yang ,  Wen-Chih Chiou

IPC分类号： H01L23/00

摘要： A method includes forming a conductive pad over an interconnect structure of a wafer, forming a capping layer over the conductive pad, forming a dielectric layer covering the capping layer, and etching the dielectric layer to form an opening in the dielectric layer. The capping layer is exposed to the opening. A wet-cleaning process is then performed on the wafer. During the wet-cleaning process, a top surface of the capping layer is exposed to a chemical solution used for performing the wet-cleaning process. The method further includes depositing a conductive diffusion barrier extending into the opening, and depositing a conductive material over the conductive diffusion barrier.