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公开(公告)号：US11940737B2
公开(公告)日：2024-03-26
申请号：US17315087
申请日：2021-05-07
发明人： Hsueh-Yi Chung , Yung-Cheng Chen , Fei-Gwo Tsai , Chi-Hung Liao , Shih-Chi Fu , Wei-Ti Hsu , Jui-Ping Chuang , Tzong-Sheng Chang , Kuei-Shun Chen , Meng-Wei Chen
CPC分类号： G03F7/70433 , G03F1/50 , G03F1/68 , G03F1/70 , G03F1/78 , G03F7/20 , G03F7/70141 , G03F7/70158 , G03F7/70716 , H01L22/30
摘要： A method includes receiving a device design layout and a scribe line design layout surrounding the device design layout. The device design layout and the scribe line design layout are rotated in different directions. An optical proximity correction (OPC) process is performed on the rotated device design layout and the rotated scribe line design layout. A reticle includes the device design layout and the scribe line design layout is formed after performing the OPC process.
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公开(公告)号：US10534272B2
公开(公告)日：2020-01-14
申请号：US16127017
申请日：2018-09-10
发明人： Hsueh-Yi Chung , Yung-Cheng Chen , Fei-Gwo Tsai , Chi-Hung Liao , Shih-Chi Fu , Wei-Ti Hsu , Jui-Ping Chuang , Tzong-Sheng Chang , Kuei-Shun Chen , Meng-Wei Chen
摘要： A method for exposing a wafer substrate includes forming a reticle having a device pattern. A relative orientation between the device pattern and a mask field of an exposure tool is determined based on mask field utilization. The reticle is loaded on the exposure tool. The wafer substrate is rotated based on an orientation of the device pattern. Radiation is projected through the reticle onto the rotated wafer substrate by the exposure tool, thereby imaging the device pattern onto the rotated wafer substrate.
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公开(公告)号：US11003091B2
公开(公告)日：2021-05-11
申请号：US16740256
申请日：2020-01-10
发明人： Hsueh-Yi Chung , Yung-Cheng Chen , Fei-Gwo Tsai , Chi-Hung Liao , Shih-Chi Fu , Wei-Ti Hsu , Jui-Ping Chuang , Tzong-Sheng Chang , Kuei-Shun Chen , Meng-Wei Chen
摘要： A method for exposing a wafer substrate includes forming a reticle having a device pattern. A relative orientation between the device pattern and a mask field of an exposure tool is determined based on mask field utilization. The reticle is loaded on the exposure tool. The wafer substrate is rotated based on an orientation of the device pattern. Radiation is projected through the reticle onto the rotated wafer substrate by the exposure tool, thereby imaging the device pattern onto the rotated wafer substrate.
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公开(公告)号：US09773671B1
公开(公告)日：2017-09-26
申请号：US15169565
申请日：2016-05-31
发明人： Meng-Tze Chen , Chen-Hau Wu , Meng-Wei Chen , Kuei-Shun Chen , Yu-Chin Huang , Li-Hsiang Lai , Shih-Ming Chang , Ken-Hsien Hsieh
CPC分类号： G03F7/405 , G03F1/36 , G03F7/70433 , G03F7/70441
摘要： Provided is a material composition and method for inhibiting the printing of SRAFs onto a substrate including coating a substrate with a resist layer. After coating the substrate, the resist layer is patterned to form a main feature pattern and at least one sub-resolution assist feature (SRAF) pattern within the resist layer. The main feature pattern may include resist sidewalls and a portion of a layer underlying the patterned resist layer. In various examples, a material composition is deposited over the patterned resist layer and into each of the main feature pattern and the at least one SRAF pattern. Thereafter, a material composition development process is performed to dissolve a portion of the material composition within the main feature pattern and to expose the portion of the layer underlying the patterned resist layer.
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公开(公告)号：US10734325B2
公开(公告)日：2020-08-04
申请号：US16662970
申请日：2019-10-24
发明人： Long-Yi Chen , Jia-Hong Chu , Chi-Wen Lai , Chia-Ching Liang , Kai-Hsiung Chen , Yu-Ching Wang , Po-Chung Cheng , Hsin-Chin Lin , Meng-Wei Chen , Kuei-Shun Chen
IPC分类号： H01L23/544 , H01L21/67 , H01L21/66 , H01L21/033 , G03F9/00 , G03F7/20 , H01L21/768
摘要： A method for forming a semiconductor device structure is provided. The method includes forming a first overlay grating over a substrate. The method includes forming a layer over the first overlay grating. The method includes forming a second overlay grating over the layer. The second overlay grating has a third strip portion and a fourth strip portion, the third strip portion and the fourth strip portion are elongated in the first elongated axis and are spaced apart from each other, there is a second distance between a third sidewall of the third strip portion and a fourth sidewall of the fourth strip portion, the third sidewall faces away from the fourth strip portion, the fourth sidewall faces the third strip portion, the first distance is substantially equal to the second distance, and the first trench extends across the third strip portion and the fourth strip portion.
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公开(公告)号：US10461037B2
公开(公告)日：2019-10-29
申请号：US15797953
申请日：2017-10-30
发明人： Long-Yi Chen , Jia-Hong Chu , Chi-Wen Lai , Chia-Ching Liang , Kai-Hsiung Chen , Yu-Ching Wang , Po-Chung Cheng , Hsin-Chin Lin , Meng-Wei Chen , Kuei-Shun Chen
IPC分类号： H01L23/544 , H01L21/768 , H01L21/67 , H01L21/66 , H01L21/033 , G03F9/00 , G03F7/20
摘要： A method for forming a semiconductor device structure is provided. The method includes forming a first overlay grating over a substrate. The first overlay grating has a first strip portion and a second strip portion. The method includes forming a first layer over the first overlay grating. The first layer has a first trench elongated in a second elongated axis, the second elongated axis is substantially perpendicular to the first elongated axis, and the first trench extends across the first strip portion and the second strip portion. The method includes forming a second overlay grating over the first layer. The second overlay grating has a third strip portion and a fourth strip portion. The third strip portion and the fourth strip portion are elongated in the first elongated axis and are spaced apart from each other.
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7.发明授权公开(公告)号：US10073354B2
公开(公告)日：2018-09-11
申请号：US14706871
申请日：2015-05-07
发明人： Hsueh-Yi Chung , Yung-Cheng Chen , Fei-Gwo Tsai , Chi-Hung Liao , Shih-Chi Fu , Wei-Ti Hsu , Jui-Ping Chuang , Tzong-Sheng Chang , Kuei-Shun Chen , Meng-Wei Chen
CPC分类号： G03F7/70433 , G03F1/50 , G03F1/68 , G03F1/70 , G03F1/78 , G03F7/20 , G03F7/70141 , G03F7/70158 , G03F7/70716 , H01L22/30
摘要： A method for exposing a wafer substrate includes forming a reticle having a device pattern. A relative orientation between the device pattern and a mask field of an exposure tool is determined based on mask field utilization. The reticle is loaded on the exposure tool. The wafer substrate is rotated based on an orientation of the device pattern. Radiation is projected through the reticle onto the rotated wafer substrate by the exposure tool, thereby imaging the device pattern onto the rotated wafer substrate.
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