Dielectric ceramic composition
    1.
    发明授权
    Dielectric ceramic composition 失效
    介电陶瓷组合物

    公开(公告)号:US06703336B2

    公开(公告)日:2004-03-09

    申请号:US10263911

    申请日:2002-10-02

    IPC分类号: C04B35468

    摘要: The dielectric ceramic composition of the first aspect of the invention comprises an essential component having a compositional formula of xBaO-yTiO2-zNd2O3 (wherein 0.02≦x≦0.2, 0.6≦y≦0.8, 0.01≦z≦0.3, x+y+z=1), and contains two types of glass powder, one comprising PbO, ZnO and B2O3 and the other comprising SiO2 and B2O3, and a third component that comprises Al2O3, SrTiO3, GeO2 and Li2O. Its advantages are that it can be sintered at low temperatures, its dielectric constant &egr;r falls between 10 and 50 or so, its unloaded Q is large, and its temperature-dependent resonant frequency change is small. The dielectric ceramic composition of the second aspect of the invention comprises an essential component having a compositional formula of s(xBaO-yTiO2-zNd2O3)-tNd2Ti2O7 (wherein 0.02≦x≦0.2, 0.6≦y≦0.8, 0.01≦z≦0.3, x+y+z=1, 0.1≦s≦0.8, 0.2≦t≦0.9, s+t=1), and contains two types of glass powder, one comprising PbO, ZnO and B2O3 and the other comprising SiO2 and B2O3, and a third component that comprises Al2O3, SrTiO3, GeO2 and Li2O. Its advantages are that it can be sintered at low temperatures, its dielectric constant &egr;r falls between 10 and 50 or so, its unloaded Q is large, and its absolute value of a temperature coefficient of resonant frequency &tgr;f is small. Still another advantage of the composition is that its relative dielectric constant &egr;r, its unloaded Q and its temperature coefficient of resonant frequency (&tgr;f) can be controlled in any desired manner by controlling the Nd2Ti2O7 content of the composition.

    摘要翻译: 本发明第一方面的介电陶瓷组合物包含具有xBaO-yTiO 2 -zNd 2 O 3组成式的基本组分(其中0.02 <= x <=0.2,0.6≤y≤0.8,0.01≤z≤0.3 ,x + y + z = 1),并且包含两种类型的玻璃粉末,一种包括PbO,ZnO和B2O3,另一种包括SiO 2和B 2 O 3,以及包含Al 2 O 3,SrTiO 3,GeO 2和Li 2 O的第三组分。 其优点是可以在低温下烧结,其介电常数εε在10〜50左右,其无负载Q大,其温度依赖谐振频率变化小。 本发明第二方面的电介质陶瓷组合物包含具有组成式s(xBaO-yTiO2-zNd2O3)-tNd2Ti2O7(其中0.02 <= x <= 0.2,0.6 <= y <= 0.8,0.01)的必要组分, = z <= 0.3,x + y + z = 1,0.1 <= s <= 0.8,0.2 <= t <= 0.9,s + t = 1),并且包含两种类型的玻璃粉末,一种包括PbO,ZnO 和B 2 O 3,另一个包括SiO 2和B 2 O 3,以及包含Al 2 O 3,SrTiO 3,GeO 2和Li 2 O的第三组分。 其优点是可以在低温下烧结,其介电常数ε在10〜50左右,其无载Q大,谐振频率τf的温度系数的绝对值较小。 组合物的另一个优点是可以通过控制组合物的Nd 2 Ti 2 O 7含量以任何所需的方式控制其相对介电常数ε,其无载Q和其谐振频率(tauf)的温度系数。

    Dielectric ceramic composition for microwave
    7.
    发明授权
    Dielectric ceramic composition for microwave 有权
    用于微波的介电陶瓷组合物

    公开(公告)号:US06274526B1

    公开(公告)日:2001-08-14

    申请号:US09716237

    申请日:2000-11-21

    IPC分类号: C04B35468

    CPC分类号: C04B35/4686

    摘要: A dielectric ceramic composition for microwave which comprises a basic composition represented by compositional formula: 2aBaO—bLn2O3—cBi2O3—2dTiO2, wherein Ln2O3 represents (eNd2O3+fSm2O3+gEu2O3); a+b+c+d=l; and e+f+g=1, in which 0.0913

    摘要翻译: 一种用于微波的介电陶瓷组合物,其包含由组成式:2aBaO-bLn2O3-cBi2O3-2dTiO2表示的碱性组合物,其中Ln2O3表示(eNd2O3 + fSm2O3 + gEu2O3); a + b + c + d = 1; 和e + f + g = 1,其中0.0913

    Image sensor and image capture apparatus
    9.
    发明授权
    Image sensor and image capture apparatus 有权
    图像传感器和图像捕获设备

    公开(公告)号:US09165964B2

    公开(公告)日:2015-10-20

    申请号:US13817387

    申请日:2011-08-12

    申请人: Koichi Fukuda

    发明人: Koichi Fukuda

    摘要: An image sensor in which each pixel includes a first sub-pixel including a first semiconductor layer, a second sub-pixel including a second semiconductor layer having a polarity different from a polarity of the first semiconductor layer, a third semiconductor layer having a polarity equal to the polarity of the first semiconductor layer, and a microlens, and which includes a plurality of pixels in which the first semiconductor is included in the second semiconductor layer, and the second semiconductor layer is included in the third semiconductor layer, wherein a center of gravity position of a light-receiving surface defining the first semiconductor layer is different from a center of gravity position of a light-receiving surface defining both the first semiconductor layer and the second semiconductor layer.

    摘要翻译: 一种图像传感器,其中每个像素包括包括第一半导体层的第一子像素,包括具有与第一半导体层的极性不同的极性的第二半导体层的第二子像素,具有极性相等的第三半导体层 涉及第一半导体层的极性和微透镜,并且其包括多个像素,其中第一半导体包括在第二半导体层中,并且第二半导体层包括在第三半导体层中,其中, 限定第一半导体层的光接收表面的重力位置不同于限定第一半导体层和第二半导体层的光接收表面的重心位置。