公开(公告)号：US20090042358A1

公开(公告)日：2009-02-12

申请号：US12250772

申请日：2008-10-14

申请人： Takahiko YOSHIZAWA ,  Noriaki Matsunaga ,  Naofumi Nakamura

发明人： Takahiko YOSHIZAWA ,  Noriaki Matsunaga ,  Naofumi Nakamura

IPC分类号： H01L21/76

CPC分类号： H01L21/02115 ,  H01L21/0337 ,  H01L21/3105 ,  H01L21/31144 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/76822 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76835

摘要： The semiconductor device fabrication method according the present invention having, forming an interlayer dielectric film containing carbon above a semiconductor substrate, forming a protective film on that portion of the interlayer dielectric film, which is close to the surface and in which the carbon concentration is low, forming a trench by selectively removing a desired region of the interlayer dielectric film and protective film, such that the region extends from the surface of the protective film to the bottom surface of the interlayer dielectric film, supplying carbon to the interface between the interlayer dielectric film and protective film, and forming a conductive layer by burying a conductive material in the trench.

摘要翻译： 根据本发明的半导体器件制造方法，在半导体衬底上形成含有碳的层间电介质膜，在层间电介质膜的与表面接近的部分形成保护膜，其中碳浓度低 通过选择性地去除层间电介质膜和保护膜的期望区域形成沟槽，使得该区域从保护膜的表面延伸到层间电介质膜的底表面，将碳供应到层间电介质 膜和保护膜，并且通过在沟槽中埋入导电材料形成导电层。

公开(公告)号：US20130043551A1

公开(公告)日：2013-02-21

申请号：US13572192

申请日：2012-08-10

申请人： Takahiko YOSHIZAWA

发明人： Takahiko YOSHIZAWA

IPC分类号： H01L31/0352 ,  H01L29/06 ,  H01L21/3105

CPC分类号： G01J3/0256 ,  B81B2201/047 ,  B81B2203/0384 ,  G01J1/0488 ,  G01J3/36 ,  G01J2003/1213 ,  G02B5/201 ,  G02B5/285 ,  H01L29/06 ,  H01L31/02165 ,  H01L31/02327 ,  H01L31/02366 ,  H01L31/18

摘要： A method for manufacturing a sloped structure is disclosed. The method includes the steps of: (a) forming a sacrificial film above a substrate; (b) forming a first film above the sacrificial film, the first film having a first portion connected to the substrate, a second portion located above the sacrificial film, a third portion located between the first portion and the second portion, and a thin region in a portion of the third portion or in a boundary section between the second portion and the third portion and having a thickness smaller than the first portion; (c) removing the sacrificial film; and (d) bending the first film in the thin region, after the step (c), thereby sloping the second portion of the first film with respect to the substrate.

摘要翻译： 公开了一种倾斜结构的制造方法。 该方法包括以下步骤：（a）在衬底上形成牺牲膜; （b）在所述牺牲膜上形成第一膜，所述第一膜具有连接到所述基板的第一部分，位于所述牺牲膜上方的第二部分，位于所述第一部分和所述第二部分之间的第三部分，以及薄区域 在所述第三部分的一部分中或在所述第二部分和所述第三部分之间的边界部分中，并且具有小于所述第一部分的厚度; （c）去除牺牲膜; 以及（d）在步骤（c）之后，在薄区域中弯曲第一膜，从而使第一膜的第二部分相对于基板倾斜。

公开(公告)号：US20120208130A1

公开(公告)日：2012-08-16

申请号：US13354887

申请日：2012-01-20

申请人： Takahiko YOSHIZAWA

发明人： Takahiko YOSHIZAWA

IPC分类号： G03F7/22

CPC分类号： G03F7/203 ,  B81B2203/0384 ,  B81C1/00103 ,  G03F7/2022

摘要： A method for manufacturing a structure includes forming a layer of photosensitive material above a substrate, disposing a mask above the layer of photosensitive material, shielding a portion of the layer of photosensitive material other than a first region of the layer of photosensitive material, exposing the first region, moving the mask along a surface of the layer of photosensitive material, shielding a portion of the layer of photosensitive material other than a second region that is a portion of the first region and a third region that is adjacent to the second region and is a portion of the region shielded in the step, and exposing the second region and the third region, and developing the layer of photosensitive material to form surfaces in the layer of photosensitive material at different heights along a direction in which the mask is moved.

摘要翻译： 一种用于制造结构的方法包括在基底上形成感光材料层，在感光材料层之上设置掩模，屏蔽除感光材料层第一区域之外的感光材料层的一部分， 第一区域，沿着感光材料层的表面移动掩模，屏蔽除了作为第一区域的一部分的第二区域和与第二区域相邻的第三区域之外的感光材料层的一部分，以及 是在步骤中屏蔽的区域的一部分，并且暴露第二区域和第三区域，并且使感光材料层显影，以在感光材料层中沿掩模移动方向的不同高度形成表面。

公开(公告)号：US20130026590A1

公开(公告)日：2013-01-31

申请号：US13541311

申请日：2012-07-03

申请人： Takahiko YOSHIZAWA

发明人： Takahiko YOSHIZAWA

IPC分类号： H01L29/06 ,  H01L31/0232 ,  H01L21/306

CPC分类号： G01J3/427 ,  B81C1/00007 ,  B81C1/00126 ,  B81C1/0015 ,  G01J3/0278 ,  G01J3/0291 ,  G01J3/513

摘要： A method for manufacturing a sloped structure is disclosed. The method includes the steps of: (a) forming a sacrificial film above a substrate; (b) forming a first film above the sacrificial film; (c) forming a second film having a first portion connected to the substrate, a second portion connected to the first film, and a third portion positioned between the first portion and the second portion; (d) removing the sacrificial film; and (e) bending the third portion of the second film after the step (d), thereby sloping the first film with respect to the substrate.

摘要翻译： 公开了一种倾斜结构的制造方法。 该方法包括以下步骤：（a）在衬底上形成牺牲膜; （b）在牺牲膜上形成第一膜; （c）形成具有连接到所述基板的第一部分的第二膜，连接到所述第一膜的第二部分和位于所述第一部分和所述第二部分之间的第三部分; （d）去除牺牲膜; 和（e）在步骤（d）之后弯曲第二薄膜的第三部分，从而使第一薄膜相对于基底倾斜。

公开(公告)号：US20110244190A1

公开(公告)日：2011-10-06

申请号：US13072127

申请日：2011-03-25

申请人： Takahiko YOSHIZAWA

发明人： Takahiko YOSHIZAWA

IPC分类号： B32B3/26

CPC分类号： G02B5/284 ,  B81B2201/0292 ,  B81C1/00126 ,  G01J3/0213 ,  G01J3/26 ,  G01J3/36 ,  G01J3/51 ,  G02B5/28 ,  G02B26/007 ,  Y10T428/24562 ,  Y10T428/24612

摘要： A tilt structure includes a shaft section formed on a substrate section, a tilt structure film having one end formed on an upper surface of the shaft section, and the other end bonded to the substrate section, and a thin film section provided to the tilt structure film, located on a corner section composed of the upper surface of the shaft section and a side surface of the shaft section, and having a film thickness thinner than the tilt structure film, the tilt structure film is bent in the thin film section, and an acute angle is formed by the substrate section and the tilt structure film.

摘要翻译： 倾斜结构包括形成在基板部分上的轴部分，倾斜结构膜，其一端形成在轴部分的上表面上，另一端接合到基板部分;以及薄膜部分，设置在倾斜结构 薄膜，位于由所述轴部的上表面构成的角部和所述轴部的侧面之间，并且具有比所述倾斜结构膜更薄的膜厚，所述倾斜结构膜在所述薄膜部弯曲，并且 由基板部和倾斜结构膜形成锐角。