公开(公告)号：US07830215B2

公开(公告)日：2010-11-09

申请号：US12019244

申请日：2008-01-24

申请人： Takamitsu Higuchi ,  Juri Kato ,  Yasuhiro Ono

发明人： Takamitsu Higuchi ,  Juri Kato ,  Yasuhiro Ono

IPC分类号： H03B5/32

CPC分类号： H03H3/02 ,  H03H9/0519 ,  H03H9/0542 ,  H03H9/0547 ,  H03H9/21 ,  H03H2003/026

摘要： A method for manufacturing a piezoelectric oscillator includes the steps of: forming a first semiconductor layer above a substrate; forming a second semiconductor layer above the first semiconductor layer; forming a first opening section that exposes the substrate by removing the second semiconductor layer and the first semiconductor layer in an area for forming a support section; forming the support section in the first opening section; forming a driving section that generates flexing vibration in an oscillation section above the second semiconductor layer; patterning the second semiconductor layer to form the oscillation section having the supporting section as a base end and another end provided so as not to contact the supporting section, and a second opening section that exposes the first semiconductor layer; and removing the first semiconductor layer through a portion exposed at the second opening section by an etching method, thereby forming a cavity section at least below the oscillation section, wherein the step of forming the driving section includes the steps of forming a first electrode, forming a piezoelectric layer above the first electrode, and forming a second electrode above the piezoelectric layer.

摘要翻译： 制造压电振荡器的方法包括以下步骤：在衬底上形成第一半导体层; 在所述第一半导体层上形成第二半导体层; 形成通过在用于形成支撑部分的区域中去除所述第二半导体层和所述第一半导体层而暴露所述衬底的第一开口部分; 在所述第一开口部中形成所述支撑部; 形成在所述第二半导体层上方的振荡部中产生挠曲振动的驱动部; 图案化第二半导体层以形成具有支撑部分作为基端的振荡部分，而另一端设置成不与支撑部分接触;以及第二开口部分，其暴露第一半导体层; 以及通过蚀刻方法通过暴露在第二开口部分的部分去除第一半导体层，从而在振荡部分的至少下方形成空腔部分，其中形成驱动部分的步骤包括以下步骤：形成第一电极，形成 在所述第一电极上方的压电层，以及在所述压电层的上方形成第二电极。

公开(公告)号：US07950282B2

公开(公告)日：2011-05-31

申请号：US12053011

申请日：2008-03-21

申请人： Takamitsu Higuchi ,  Yasuhiro Ono

发明人： Takamitsu Higuchi ,  Yasuhiro Ono

IPC分类号： G01P15/09

CPC分类号： G01P15/097 ,  G01P15/0802

摘要： An acceleration sensor includes: a piezoelectric vibration device; an oscillation circuit; and a detection circuit, wherein the piezoelectric vibration device includes a substrate, an insulation layer formed above the substrate, a vibration section forming layer formed above the insulation layer, a vibration section formed in a cantilever shape in a first opening section that penetrates the vibration section forming layer and having a base section affixed to the vibration section forming layer and two beam sections extending from the base section, a second opening section that penetrates the insulation layer and formed below the first opening section and the vibration section, and a piezoelectric element section formed on each of the beam sections; the oscillation circuit vibrates the piezoelectric vibration device at a resonance frequency; and the detection circuit detects a change in the frequency of vibrations of the piezoelectric vibration device which is caused by an acceleration applied in a direction in which the beam sections extend, and outputs a signal corresponding to the acceleration based on the change in the frequency.

摘要翻译： 加速度传感器包括：压电振动装置; 振荡电路; 以及检测电路，其中所述压电振动装置包括基板，形成在所述基板上的绝缘层，形成在所述绝缘层上方的振动部分形成层，在穿过所述振动的第一开口部中以悬臂形状形成的振动部分 截面形成层，并且具有固定在振动部分形成层上的基部和从基部延伸的两个梁部，穿过绝缘层并形成在第一开口部和振动部下方的第二开口部，以及压电元件 每个梁段上形成的截面; 振荡电路以共振频率振动压电振动装置; 并且检测电路检测由沿光束部分延伸的方向施加的加速度引起的压电振动装置的振动频率的变化，并且基于频率的变化输出与加速度相对应的信号。

公开(公告)号：US07913560B2

公开(公告)日：2011-03-29

申请号：US12050228

申请日：2008-03-18

申请人： Takamitsu Higuchi ,  Yasuhiro Ono

发明人： Takamitsu Higuchi ,  Yasuhiro Ono

IPC分类号： G01P9/04 ,  G01C19/56

CPC分类号： G01C19/5621

摘要： An angular rate sensor includes a piezoelectric vibration device; and a detection section, wherein the piezoelectric vibration device includes a vibration section having a first support section, four (first-fourth) cantilever sections supported by the first support section, and a second support section that supports the first support section. The detection section is formed above the vibration section for detecting an angular rate of rotation applied to the vibration section, and has a lower electrode, a piezoelectric layer formed above the lower electrode, and an upper electrode formed above the piezoelectric layer.

摘要翻译： 角速度传感器包括压电振动装置; 以及检测部，其中所述压电振动装置包括具有第一支撑部的振动部，由所述第一支撑部支撑的四个（第一〜第四）悬臂部以及支撑所述第一支撑部的第二支撑部。 检测部形成在用于检测施加到振动部的旋转角速度的振动部的上方，并且具有下电极，形成在下电极上的压电层和形成在压电层上的上电极。

公开(公告)号：US07841056B2

公开(公告)日：2010-11-30

申请号：US12192161

申请日：2008-08-15

申请人： Akihito Matsumoto ,  Takamitsu Higuchi ,  Yasuhiro Ono

发明人： Akihito Matsumoto ,  Takamitsu Higuchi ,  Yasuhiro Ono

IPC分类号： H04R17/00 ,  H01L41/053

CPC分类号： B41J2/161 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1634 ,  B41J2/1639 ,  B41J2/1642 ,  B41J2/1646 ,  H01L41/047 ,  H01L41/0973 ,  H01L41/314 ,  H01L41/332 ,  Y10T29/42 ,  Y10T29/49126

摘要： A method of manufacturing a piezoelectric element includes: forming a first base substrate having an element to be transferred; forming a second base substrate; and transferring the element to the second base substrate. The forming of the element includes forming a first electrode above a first substrate, forming a piezoelectric layer above the first electrode, forming a second electrode above the piezoelectric layer, crystallizing the piezoelectric layer, forming a dielectric layer above the second electrode, and etching the dielectric layer such that part of the second electrode is exposed and the dielectric layer has a protrusion upwardly protruding relative to the second electrode. Forming the second base substrate includes forming a third electrode above a second substrate. The transferring includes bonding the element and the second base substrate such that the second substrate is in contact with the protrusion and the second electrode is in contact with the third electrode.

摘要翻译： 一种制造压电元件的方法包括：形成具有待转印元件的第一基底基板; 形成第二基底; 并将元件转移到第二基底基板。 元件的形成包括在第一基板上形成第一电极，在第一电极之上形成压电层，在压电层上方形成第二电极，使压电层结晶，在第二电极上形成电介质层， 电介质层，使得第二电极的一部分被暴露，并且电介质层具有相对于第二电极向上突出的突起。 形成第二基底基底包括在第二基底上形成第三电极。 转印包括将元件和第二基底基板接合，使得第二基板与突起接触并且第二电极与第三电极接触。

公开(公告)号：US07954377B2

公开(公告)日：2011-06-07

申请号：US12056349

申请日：2008-03-27

申请人： Takamitsu Higuchi ,  Yasuhiro Ono

发明人： Takamitsu Higuchi ,  Yasuhiro Ono

IPC分类号： G01P15/09

CPC分类号： G01P15/097 ,  G01P15/09

摘要： An acceleration sensor includes: a piezoelectric vibration device; an oscillation circuit; and a detection circuit, wherein the piezoelectric vibration device includes a substrate, an insulation layer formed above the substrate, a vibration section forming layer formed above the insulation layer, a vibration section formed in a cantilever shape in a first opening section that penetrates the vibration section forming layer, a second opening section that penetrates the insulation layer and formed below the first opening section and the vibration section, and a piezoelectric element section formed on the vibration section, the oscillation circuit vibrates the piezoelectric vibration device at a resonance frequency, and the detection circuit detects a change in the frequency of vibration of the piezoelectric vibration device which is caused by an acceleration applied in a direction in which the vibration section extends, and outputs a signal corresponding to the acceleration based on the change in the frequency.

摘要翻译： 加速度传感器包括：压电振动装置; 振荡电路; 以及检测电路，其中所述压电振动装置包括基板，形成在所述基板上的绝缘层，形成在所述绝缘层上方的振动部分形成层，在穿过所述振动的第一开口部中以悬臂形状形成的振动部分 截面形成层，穿过绝缘层并形成在第一开口部分和振动部分下方的第二开口部分和形成在振动部分上的压电元件部分，振荡电路以共振频率振动压电振动器件，并且 检测电路检测由振动部分延伸的方向施加的加速度引起的压电振动装置的振动频率的变化，并且基于频率的变化输出与加速度相对应的信号。

公开(公告)号：US20100013894A1

公开(公告)日：2010-01-21

申请号：US12556232

申请日：2009-09-09

申请人： Mayumi Ueno ,  Takamitsu Higuchi ,  Takeshi Kijima

发明人： Mayumi Ueno ,  Takamitsu Higuchi ,  Takeshi Kijima

IPC分类号： B41J2/045

CPC分类号： H01L41/18 ,  B41J2/14201 ,  H01L41/0815 ,  H01L41/1873 ,  H01L41/318 ,  H03H9/02031 ,  H03H9/02574

摘要： A piezoelectric laminate including a base and a first piezoelectric layer formed above the base and including potassium sodium niobate. The first piezoelectric layer is shown by a compositional formula (KaNa1-a)xNbO3, “a” and “x” in the compositional formula being respectively 0.1

摘要翻译： 一种压电层压板，包括在基底上形成的底部和第一压电层，并包括铌酸钾钠。 第一压电层由组成式（KaNa1-a）xNbO3表示，组成式中的“a”和“x”分别为0.1

公开(公告)号：US07596840B2

公开(公告)日：2009-10-06

申请号：US11190038

申请日：2005-07-26

申请人： Setsuya Iwashita ,  Takamitsu Higuchi

发明人： Setsuya Iwashita ,  Takamitsu Higuchi

IPC分类号： H04R17/10 ,  B44C1/165

CPC分类号： H01L41/319 ,  H03H3/02 ,  H03H9/02031 ,  H03H9/0542 ,  H03H9/173 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49128 ,  Y10T29/49156

摘要： To provide a method for manufacturing a piezoelectric thin film resonator with excellent characteristics. A method for manufacturing a piezoelectric thin film resonator in accordance with the present invention includes a step of forming a laminated body by successively laminating, above a first substrate, a piezoelectric thin film and a first electrode, a step of bonding a second substrate and the laminated body, a step of separating the first substrate from the laminated body, a step of forming a second electrode above the piezoelectric thin film, and a step of patterning the second electrode, the piezoelectric thin film and the first electrode.

摘要翻译： 提供一种制造具有优异特性的压电薄膜谐振器的方法。 根据本发明的压电薄膜谐振器的制造方法包括：通过在第一基板上方依次层叠形成压电薄膜和第一电极而形成层压体的步骤，接合第二基板和 层压体，从层叠体分离第一基板的步骤，在压电薄膜的上方形成第二电极的工序，以及对第二电极，压电薄膜和第一电极进行图案化的工序。

公开(公告)号：US07310862B2

公开(公告)日：2007-12-25

申请号：US11000517

申请日：2004-11-30

申请人： Takamitsu Higuchi ,  Setsuya Iwashita ,  Hiromu Miyazawa

发明人： Takamitsu Higuchi ,  Setsuya Iwashita ,  Hiromu Miyazawa

IPC分类号： H01L41/22

CPC分类号： B41J2/161 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1634 ,  B41J2/1642 ,  B41J2/1645 ,  B41J2/1646 ,  C23C14/08 ,  C23C14/28 ,  H01L41/1876 ,  H01L41/316 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49005 ,  Y10T29/49007

摘要： A method is provided for effectively manufacturing a piezoelectric device equipped with a piezoelectric film with a crystal orientation that is aligned in a desired direction. An interlayer which partially has a layer formed by an ion beam assisted laser ablation method while controlling a temperature rise accompanied by an ion beam irradiation by a cooling device and is bi-axially oriented as a whole, is formed on a surface of a substrate. A lower electrode is formed on the interlayer. A piezoelectric film is formed on the lower electrode. An upper electrode is formed on the piezoelectric film. The lower electrode and the piezoelectric film are formed by epitaxial growth.

摘要翻译： 提供了一种有效地制造具有在期望方向上排列的晶体取向的压电薄膜的压电装置的方法。 在衬底的表面上形成部分地具有通过离子束辅助激光烧蚀法形成的层的中间层，同时控制伴随着冷却装置的离子束照射并且作为整体的双轴取向的温度升高。 在中间层上形成下电极。 在下电极上形成压电薄膜。 在压电膜上形成上电极。 下电极和压电膜通过外延生长形成。

公开(公告)号：US07258742B2

公开(公告)日：2007-08-21

申请号：US10916208

申请日：2004-08-11

申请人： Takamitsu Higuchi ,  Setsuya Iwashita ,  Hiromu Miyazawa

发明人： Takamitsu Higuchi ,  Setsuya Iwashita ,  Hiromu Miyazawa

IPC分类号： C30B25/02

CPC分类号： H03H9/02543 ,  C30B19/00 ,  C30B19/12 ,  C30B29/30 ,  H03H3/08 ,  H03H9/02574 ,  H03H9/0542

摘要： A method of manufacturing KNbO3 single crystal thin film having single-phase high quality and excellent morphology on each of single crystal substrates. A surface acoustic wave element, frequency filter, frequency oscillator, electronics circuit, and electronic device employ the thin film manufactured by the method, and have high k2, and are wideband, reduced in size and economical in power consumption. A plasma plume containing K, Nb, and O in the range 0.5≦x≦xE is supplied to a substrate, where x is a mole ratio of niobium (Nb) to potassium (K) in KxNb1−xOy, and xE is a mole composition ratio at the eutectic point for KNbO3 and 3K2O.Nb2O5 under a predetermined oxygen partial pressure. Maintaining the temperature Ts of the substrate in the range TE≦Ts≦Tm where TE represents the temperature at the eutectic point and Tm represents a complete melting temperature, the KNbO3 single crystal is precipitated from the KxNb1−xOy deposited on the substrate.

摘要翻译： 在单晶基板上制造具有单相高质量和优异形态的KNbO 3 单晶薄膜的方法。 表面声波元件，频率滤波器，频率振荡器，电子电路和电子器件采用该方法制造的薄膜，并且具有高k 2，并且是宽带的，尺寸减小且经济 能量消耗。 将含有0.5 <= X <= X 的K，Nb和O的等离子体羽流供给到基底，其中x是铌（Nb）与钾（K）的摩尔比， 在N x Nb 1-x O y y中，x E是在共晶点处的摩尔组成比 在预定的氧分压下的KNbO 3 3和3K 2 O 2 N 2 O 5 O 3。 保持基板的温度T 在范围T T E表示共晶点处的温度，T≠表示完全熔融温度，KNbO 3单晶从K铌Nb析出 沉积在衬底上的1-x O 2 O 3。

公开(公告)号：US07244016B2

公开(公告)日：2007-07-17

申请号：US11002964

申请日：2004-12-02

申请人： Setsuya Iwashita ,  Takamitsu Higuchi ,  Hiromu Miyazawa ,  Satoshi Nebashi

发明人： Setsuya Iwashita ,  Takamitsu Higuchi ,  Hiromu Miyazawa ,  Satoshi Nebashi

IPC分类号： B41J2/045

CPC分类号： B41J2/14233

摘要： An ink jet head is provided that can effectively suppress operational interferences among adjacent cavities, and is capable of ultra-high-density and high-speed printing. The ink jet head is equipped with a plurality of cavities each having a volume that is variable by a deformation operation of a piezoelectric element, wherein beam members are provided between inner walls that interpose the cavity.

摘要翻译： 提供了可以有效地抑制相邻空腔之间的操作干扰的喷墨头，并且能够进行超高密度和高速打印。 喷墨头配备有多个空腔，每个空腔具有通过压电元件的变形操作而变化的体积，其中梁构件设置在插入空腔的内壁之间。