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    Mode-locked semiconductor laser and method of driving the same
    1.
    发明授权
    Mode-locked semiconductor laser and method of driving the same 失效
    锁模半导体激光器及其驱动方法

    公开(公告)号：US6031851A

    公开(公告)日：2000-02-29

    申请号：US948046

    申请日：1997-10-09

    申请人： Takanori Shimizu ,  Hiroyuki Yokoyama ,  Masayuki Yamaguchi

    发明人： Takanori Shimizu ,  Hiroyuki Yokoyama ,  Masayuki Yamaguchi

    IPC分类号： H01S5/00 ,  H01S3/098 ,  H01S5/026 ,  H01S5/042 ,  H01S5/06 ,  H01S5/0625 ,  H01S5/065 ,  H01S3/10 ,  H01S3/13 ,  H01S5/32

    CPC分类号： H01S5/06256 ,  H01S5/0601 ,  H01S5/0265

    摘要： There is provided a mode-locked semiconductor laser including a saturable absorber section, a gain section having the same composition as that of the saturable absorber section, a non-absorptive waveguide section having an absorption edge wavelength shorter than an oscillation wavelength of the gain section, an electroabsorption modulator section having an absorption edge wavelength intermediate between an oscillation wavelength of the gain section and an absorption edge wavelength of the non-absorptive waveguide section, and a distributed Bragg reflector section having the same composition as that of the non-absorptive waveguide section and including a diffraction grating. These five sections are optically coupled to one another in a single waveguide. The above-mentioned mode-locked semiconductor laser makes it possible to enhance an efficiency with which high frequency signals are applied thereto, with conditions for causing saturable absorption operation, such as a section length and a bias voltage, being kept in an optimal range.

    摘要翻译： 提供了包括可饱和吸收体部分的模式锁定半导体激光器，具有与可饱和吸收体部分相同组成的增益部分，具有比吸收边缘波长短于增益部分的振荡波长的吸收边缘波长的非吸收波导部分 具有吸收边缘波长介于增益部分的振荡波长与非吸收波导部分的吸收边缘波长之间的电吸收调制部分，以及具有与非吸收波导部分相同组成的分布布拉格反射部分 并包括衍射光栅。 这五个部分在单个波导中彼此光学耦合。 上述模式锁定半导体激光器使得可以提高对其施加高频信号的效率，同时使诸如截面长度和偏置电压之类的可饱和吸收操作的条件保持在最佳范围内。

    Laser diode device including a top electrode with first and second sections
    3.
    发明授权
    Laser diode device including a top electrode with first and second sections 有权
    激光二极管器件包括具有第一和第二部分的顶部电极

    公开(公告)号：US09001860B2

    公开(公告)日：2015-04-07

    申请号：US13310260

    申请日：2011-12-02

    申请人： Tomoyuki Oki ,  Hideki Watanabe ,  Rintaro Koda ,  Masaru Kuramoto ,  Hiroyuki Yokoyama

    发明人： Tomoyuki Oki ,  Hideki Watanabe ,  Rintaro Koda ,  Masaru Kuramoto ,  Hiroyuki Yokoyama

    IPC分类号： H01S5/323 ,  H01S5/343 ,  B82Y20/00 ,  H01S5/0625 ,  H01S5/065 ,  H01S5/10 ,  H01S5/14 ,  H01S5/22

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/06253 ,  H01S5/0658 ,  H01S5/1014 ,  H01S5/1064 ,  H01S5/141 ,  H01S5/22

    摘要： A laser diode device includes a laminated structure in which a first compound semiconductor layer, a third compound semiconductor layer that has a light emitting region and a saturable absorption region, and a second compound semiconductor layer are sequentially layered, a second electrode, and a first electrode. The laminated structure has ridge stripe structure. The second electrode is separated into a first section to obtain forward bias state by applying a direct current to the first electrode through the light emitting region and a second section to add electric field to the saturable absorption region by an isolation trench. When minimum width of the ridge stripe structure is WMIN, and width of the ridge stripe structure of the second section of the second electrode in an interface between the second section of the second electrode and the isolation trench is W2, 1

    摘要翻译： 激光二极管装置包括其中依次层叠有第一化合物半导体层，具有发光区域和可饱和吸收区域的第三化合物半导体层和第二化合物半导体层的层叠结构，第二电极和第一 电极。 层叠结构具有脊状结构。 将第二电极分离为第一部分，以通过通过发光区域向第一电极施加直流电流以及通过隔离沟槽向可饱和吸收区域加电场的第二部分来获得正向偏置状态。 当脊条纹结构的最小宽度为WMIN时，第二电极的第二部分与隔离沟槽之间的界面中的第二电极的第二部分的脊状条纹结构的宽度为W2，1

    MICROSCOPE APPARATUS, OPTICAL PICKUP APPARATUS AND LIGHT IRRADIATION APPARATUS
    4.
    发明申请
    MICROSCOPE APPARATUS, OPTICAL PICKUP APPARATUS AND LIGHT IRRADIATION APPARATUS 有权
    显微镜装置，光学拾取装置和光照射装置

    公开(公告)号：US20120314147A1

    公开(公告)日：2012-12-13

    申请号：US13581248

    申请日：2011-02-24

    申请人： Shunichi Sato ,  Yuichi Kozawa ,  Hiroyuki Yokoyama ,  Tomomi Nemoto ,  Terumasa Hibi ,  Nobuyuki Hashimoto ,  Makoto Kurihara

    发明人： Shunichi Sato ,  Yuichi Kozawa ,  Hiroyuki Yokoyama ,  Tomomi Nemoto ,  Terumasa Hibi ,  Nobuyuki Hashimoto ,  Makoto Kurihara

    IPC分类号： G02F1/1333 ,  G02F1/13357

    CPC分类号： G02B21/0092 ,  G02F1/0136 ,  G02F1/134309 ,  G02F1/1347 ,  G02F2203/04 ,  G02F2203/07 ,  G02F2203/50

    摘要： The microscope apparatus includes a light source which outputs linear polarization having a first wavelength, a polarization conversion element which includes a liquid crystal layer, and by causing linear polarization to pass the liquid crystal layer, converts linear polarization to radial polarization, an objective lens which focuses the radial polarization onto an object surface, a condenser lens which collimates the light reflected from the object surface, a light receiving element which receives light collimated by the condenser lens and outputs signal in accordance with the intensity of light, and a controller which applies electric voltage in accordance with the first wavelength to the liquid crystal layer of the polarization conversion element. The polarization conversion element is disposed in the pupil plane of the objective lens on the light source side.

    摘要翻译： 显微镜装置包括输出具有第一波长的线偏振光的光源，包括液晶层的偏振转换元件，并且使线偏振通过液晶层，将线偏振转换成径向偏振，将物镜 将径向极化聚焦到物体表面上，准直来自物体表面反射的光的聚光透镜，接收由聚光透镜准直的光并根据光的强度输出信号的光接收元件，以及应用 根据第一波长的电压到偏振转换元件的液晶层。 偏光转换元件设置在光源侧物镜的光瞳平面中。

    LASER DIODE ASSEMBLY
    5.
    发明申请
    LASER DIODE ASSEMBLY 有权
    激光二极管总成

    公开(公告)号：US20120099610A1

    公开(公告)日：2012-04-26

    申请号：US13267509

    申请日：2011-10-06

    申请人： Shunsuke Kono ,  Hiroyuki Yokoyama ,  Masaru Kuramoto ,  Tomoyuki Oki

    发明人： Shunsuke Kono ,  Hiroyuki Yokoyama ,  Masaru Kuramoto ,  Tomoyuki Oki

    IPC分类号： H01S3/098

    CPC分类号： H01S5/0657 ,  B82Y20/00 ,  H01S5/0287 ,  H01S5/141 ,  H01S5/3063 ,  H01S5/3202 ,  H01S5/3216 ,  H01S5/34333

    摘要： A laser diode assembly includes: a mode-locked laser diode device; a diffraction grating that configures an external resonator, returns primary or more order diffracted light to the mode-locked laser diode device, and outputs 0-order diffracted light outside; and an imaging section provided between the mode-locked laser diode device and the diffraction grating and imaging an image of a light output end face of the mode-locked laser diode device on the diffraction grating.

    摘要翻译： 激光二极管组件包括：锁模激光二极管器件; 配置外部谐振器的衍射光栅将一次或更多次衍射光返回到锁模激光二极管器件，并将0级衍射光输出到外部; 以及设置在所述锁模激光二极管器件和所述衍射光栅之间的成像部分，并且对所述衍射光栅上的所述锁模激光二极管器件的光输出端面的图像进行成像。

    MODE-LOCKED SEMICONDUCTOR LASER DEVICE AND DRIVING METHOD THEREOF
    8.
    发明申请
    MODE-LOCKED SEMICONDUCTOR LASER DEVICE AND DRIVING METHOD THEREOF 有权
    模式锁定半导体激光器件及其驱动方法

    公开(公告)号：US20110216788A1

    公开(公告)日：2011-09-08

    申请号：US13035540

    申请日：2011-02-25

    申请人： Tomoyuki Oki ,  Masaru Kuramoto ,  Masao Ikeda ,  Takao Miyajima ,  Hideki Watanabe ,  Hiroyuki Yokoyama

    发明人： Tomoyuki Oki ,  Masaru Kuramoto ,  Masao Ikeda ,  Takao Miyajima ,  Hideki Watanabe ,  Hiroyuki Yokoyama

    IPC分类号： H01S3/098

    摘要： Provided is a driving method of a mode-locked semiconductor laser device comprising a laminated structure in which a first compound semiconductor layer, a third compound semiconductor layer having an emission region and a second compound semiconductor layer are successively laminated, a second electrode, and a first electrode. The laminated structure is formed on a compound semiconductor substrate having polarity, the third compound semiconductor layer includes a quantum well structure having a well layer and a barrier layer. The well layer has a depth of 1 nm or more and 10 nm or less. The barrier layer has an impurity doping density of 2×1018 cm−3 or more and 1×1020 cm−3 or less. An optical pulse is generated in the emission region by passing a current from the second electrode to the first electrode via the laminated structure.

    摘要翻译： 提供了一种锁模半导体激光器件的驱动方法，其包括层叠结构，其中第一化合物半导体层，具有发射区域的第三化合物半导体层和第二化合物半导体层被连续层压，第二电极和 第一电极。 层叠结构形成在具有极性的化合物半导体基板上，第三化合物半导体层包括具有阱层和阻挡层的量子阱结构。 阱层的深度为1nm以上且10nm以下。 势垒层的杂质掺杂密度为2×1018cm-3以上且1×1020cm-3以下。 通过将电流从第二电极通过层压结构传递到第一电极，在发射区域中产生光脉冲。

    SCROLL TYPE FLUID MACHINE
    9.
    发明申请
    SCROLL TYPE FLUID MACHINE 审中-公开
    滚筒式流体机

    公开(公告)号：US20110033329A1

    公开(公告)日：2011-02-10

    申请号：US12936505

    申请日：2009-04-06

    申请人： Jiro Iizuka ,  Kiyoshi Terauchi ,  Hiroyuki Yokoyama

    发明人： Jiro Iizuka ,  Kiyoshi Terauchi ,  Hiroyuki Yokoyama

    IPC分类号： F01C1/063

    CPC分类号： F01C1/0215 ,  F01C17/066

    摘要： A scroll type fluid machine having a rotation-preventing member extending between at least one of a fixed scroll and a housing which form a non-orbiting part and a movable scroll and preventing rotation of the movable scroll, and also having a mechanism for making the rotation-preventing member movable, the mechanism being provided to the rotation-preventing member for permitting a movement of the rotation-preventing member itself which movement is required for the rotation-preventing member to permit an orbital movement of the movable scroll. The scroll type fluid machine, with the rotation-preventing mechanism for the movable scroll, can be easily assembled into a target assembly condition, and can be formed to be small-sized and light-weighted.

    摘要翻译： 一种涡旋式流体机械，具有防旋转构件，其在至少一个固定涡旋件和壳体之间延伸，所述旋转防止构件形成非轨道部分和可动涡旋件，并且防止动涡旋盘的旋转，并且还具有使 防止旋转构件可移动，该机构设置在防旋转构件上，用于允许旋转防止构件本身的移动，防止旋转构件需要运动以允许动涡旋件的轨道运动。 具有用于动涡旋件的防旋转机构的涡旋式流体机械可以容易地组装成目标组装状态，并且可以形成为小型和轻型的。