公开(公告)号：US5223080A

公开(公告)日：1993-06-29

申请号：US799182

申请日：1991-11-27

申请人： Yutaka Ohta ,  Masatake Katayama ,  Takao Abe ,  Yasuaki Nakazato

发明人： Yutaka Ohta ,  Masatake Katayama ,  Takao Abe ,  Yasuaki Nakazato

IPC分类号： H01L21/66 ,  C30B33/00 ,  G01B11/06 ,  H01L21/20 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/762 ,  H01L21/84

CPC分类号： C30B29/06 ,  C30B33/00 ,  G01B11/0683 ,  H01L21/3065 ,  H01L21/76251 ,  H01L22/12 ,  H01L22/20

摘要： A method for controlling the thickness of a single crystal thin-film silicon layer bonded on a dielectric substrate in a SOI substrate thereby effecting conversion of said single crystal silicon layer to a thin film is disclosed. To be more precise, said method comprises selectively and hypothetically dividing the entire surface of said single crystal silicon layer destined to undergo a chemical vapor-phase corrosion reaction for the sake of said conversion into necessary minute sections and, at the sametime, taking preparatory measurement of the thickness of said single crystal silicon layer in each of said minute sections, and effecting on each of said minute sections said conversion to a thin film by a chemical vapor-phase corrosion reaction adjusted in accordance with the measured thickness of layer. The conversion to a thin film is attained with the dispersion of thickness of the single crystal silicon layer controlled with high accuracy.

公开(公告)号：US5427052A

公开(公告)日：1995-06-27

申请号：US873751

申请日：1992-04-27

申请人： Yutaka Ohta ,  Masatake Nakano ,  Masatake Katayama ,  Takao Abe

发明人： Yutaka Ohta ,  Masatake Nakano ,  Masatake Katayama ,  Takao Abe

IPC分类号： H01L21/302 ,  G01B11/06 ,  H01L21/3065 ,  H01L21/66 ,  H01L21/762 ,  H01L27/12 ,  C30B25/16

CPC分类号： H01L21/76251 ,  G01B11/0683 ,  H01L21/3065 ,  H01L22/12 ,  H01L22/20

摘要： A method and apparatus for uniformizing a bonded SOI (silicon on insulator) thin film layer by the reaction of chemical vapor-phase corrosion excited by the ultraviolet light, which effect the measurement of film thickness efficiently and conveniently and consequently attaining highly accurate control of the dispersion of thickness of the thin film layer without requiring the substrate to be removed from the reaction vessel for chemical vapor-phase corrosion on each occasion of the measurement or necessitating installation of a mechanism for alteration of the position of measurement inside or outside the reaction vessel are disclosed. The measurement of film thickness is carried out by keeping observation of interference fringes due to distribution of thickness of the film layer.

摘要翻译： 通过由紫外光激发的化学气相腐蚀的反应使接合的SOI（绝缘体上硅）层均匀化的方法和装置，其有效和方便地实现膜厚度的测量，从而实现对 在每次测量时，不需要从用于化学气相腐蚀的反应容器中除去衬底的薄膜层的厚度分散，或者需要安装用于改变反应容器内部或外部的测量位置的机构 被披露。 通过保持观察由于膜层的厚度分布引起的干涉条纹来进行膜厚度的测量。

公开(公告)号：US5376215A

公开(公告)日：1994-12-27

申请号：US151209

申请日：1993-11-12

申请人： Yutaka Ohta ,  Masatake Nakano ,  Masatake Katayama ,  Takao Abe

发明人： Yutaka Ohta ,  Masatake Nakano ,  Masatake Katayama ,  Takao Abe

IPC分类号： H01L21/302 ,  G01B11/06 ,  H01L21/3065 ,  H01L21/66 ,  H01L21/762 ,  H01L27/12 ,  B44C1/22 ,  C03C15/00 ,  H01L21/306

CPC分类号： H01L21/76251 ,  G01B11/0683 ,  H01L21/3065 ,  H01L22/12 ,  H01L22/20

摘要： A method and apparatus for uniformizing a bonded SOI (silicon on insulator) thin film layer by the reaction of chemical vapor-phase corrosion excited by the ultraviolet light, which effect the measurement of film thickness efficiently and conveniently and consequently attaining highly accurate control of the dispersion of thickness of the thin film layer without requiring the substrate to be removed from the reaction vessel for chemical vapor-phase corrosion on each occasion of the measurement or necessitating installation of a mechanism for alteration of the position of measurement inside or outside the reaction vessel are disclosed. The measurement of film thickness is carried out by keeping observation of interference fringes due to distribution of thickness of the film layer.

摘要翻译： 通过由紫外光激发的化学气相腐蚀的反应使接合的SOI（绝缘体上硅）层均匀化的方法和装置，其有效和方便地实现膜厚度的测量，从而实现对 在每次测量时，不需要从用于化学气相腐蚀的反应容器中除去衬底的薄膜层的厚度分散，或者需要安装用于改变反应容器内部或外部的测量位置的机构 被披露。 通过保持观察由于膜层的厚度分布引起的干涉条纹来进行膜厚度的测量。

公开(公告)号：US5240883A

公开(公告)日：1993-08-31

申请号：US841166

申请日：1992-02-25

申请人： Takao Abe ,  Masatake Katayama ,  Akio Kanai ,  Konomu Ohki ,  Masatake Nakano

发明人： Takao Abe ,  Masatake Katayama ,  Akio Kanai ,  Konomu Ohki ,  Masatake Nakano

IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L21/304 ,  H01L21/3063 ,  H01L21/762 ,  H01L27/12

CPC分类号： H01L21/2007 ,  H01L21/3063 ,  H01L21/76251 ,  Y10S148/127 ,  Y10S148/135 ,  Y10S438/924

摘要： A thin Silicon film On Insulator (SOI) material fabricating method which is capable of providing a very high thickness uniformity of the silicon film, a process simplification and a considerable reduction of processing cost is disclosed, in which a silicon oxide film is formed on one or both of a p-type silicon bond wafer and a silicon base wafer, then the two wafers are bonded together through the silicon oxide film, subsequently a fixed positive charge is induced in the silicon oxide film to form a n-type inversion layer in the p-type silicon bond wafer adjacent to an interface between the p-type silicon bond wafer and the silicon oxide film layer, and thereafter a chemical etching is effected while applying a positive voltage to the p-type silicon bond wafer so that an etch-stop is made at an interface between a depletion layer including the n-type inversion layer and the p-type layer.

公开(公告)号：US5266824A

公开(公告)日：1993-11-30

申请号：US852064

申请日：1992-03-16

申请人： Takao Abe ,  Yasuaki Nakazato ,  Atsuo Uchiyama

发明人： Takao Abe ,  Yasuaki Nakazato ,  Atsuo Uchiyama

IPC分类号： H01L21/02 ,  G02F1/1362 ,  H01L21/20 ,  H01L21/336 ,  H01L21/762 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786 ,  H01L27/01 ,  H01L39/00

CPC分类号： H01L21/76251 ,  H01L21/2007 ,  G02F1/13454 ,  Y10S438/977

摘要： The present invention provides a semiconductor substrate which is formed by bonding wafers together by heat treatment without causing the substrate to be thermally damaged to have thermal strain, separation, cracks, etc. due to the difference in the thermal expansion coefficient of the wafers, and particularly a semiconductor substrate having an SOI structure which can provide a silicon film thin enough to allow various integrated circuits or TFT-LCD to be formed In the present invention, after wafers are bonded temporarily in a low temperature range, one of the wafers is made thin by chemical treatment, then the wafers were bonded fully by heat treatment in a temperature range (where the thermal expansion coefficient of the wafer are not affected) higher than the above low temperature range, and then said one wafer can be made thinner by mechanical grinding or polishing mechano-chemically. Thus according to the present invention, even if a semiconductor substrate is formed by sticking a silicon wafer and a quartz wafer together, damages that will be caused thermally due to thermal expansion can be prevented and a film which is made thin enough required for forming various integrated circuits or TFT-LCD or the like can be easily obtained.

公开(公告)号：US5395788A

公开(公告)日：1995-03-07

申请号：US116279

申请日：1993-09-03

申请人： Takao Abe ,  Yasuaki Nakazato ,  Atsuo Uchiyama

发明人： Takao Abe ,  Yasuaki Nakazato ,  Atsuo Uchiyama

IPC分类号： G02F1/1362 ,  H01L21/20 ,  H01L21/762 ,  H01L21/76

CPC分类号： H01L21/2007 ,  H01L21/76251 ,  G02F1/13454 ,  Y10S148/012 ,  Y10S148/15

摘要： The present invention provides a method of making a semiconductor substrate having an SOI structure by temporarily bonding together two wafers having different thermal expansion coefficients to allow thinning of at least one of the wafers by chemical and/or mechanical treatment(s) to reduce the risk of strain, separation, cracks to the wafers followed by one or more heat treating steps to fully bond the wafers together. The method can produce semiconductor substrate having an SOI structure which can provide a silicon layer thin enough to allow various integrated circuits, or TFL-LCD or the like to be formed.

摘要翻译： 本发明提供一种制造具有SOI结构的半导体衬底的方法，该半导体衬底通过将具有不同热膨胀系数的两个晶片暂时接合在一起，以允许通过化学和/或机械处理使至少一个晶片变薄以降低风险 的应变，分离，裂纹到晶片，随后进行一个或多个热处理步骤以将晶片完全结合在一起。 该方法可以制造具有SOI结构的半导体衬底，其能够提供足够薄的硅层，以允许形成各种集成电路或TFL-LCD等。

公开(公告)号：US5213657A

公开(公告)日：1993-05-25

申请号：US921348

申请日：1992-07-29

申请人： Takao Abe ,  Yasuaki Nakazato ,  Atsuo Uchiyama

发明人： Takao Abe ,  Yasuaki Nakazato ,  Atsuo Uchiyama

IPC分类号： H01L21/20 ,  H01L21/308 ,  H01L21/762

CPC分类号： H01L21/3081 ,  H01L21/2007 ,  H01L21/3083 ,  H01L21/76251 ,  H01L22/12 ,  H01L22/20 ,  Y10S438/911 ,  Y10S438/924

摘要： A Si single crystal thin film is classified according to the thickness into several areas such that the areas where the thin film is thicker is made oxide layer-free and the areas where the thin film is thinner is covered with oxide layer. Then, oxidation is conducted so that the thicker the thin film the lower the Si interface becomes, utilizing the different growth rates of the oxide layer in these areas. The thin film surface with a resulting staircase configuration is then leveled by the subsequent polishing treatment. In other method, oxide layer is formed in such way that the areas with a thicker thin film thickness will have a thinner oxide layer and the areas with a thinner thin film thickness will have a thicker oxide layer, and oxidation is conducted such that the thicker the thin film the lower the Si interface becomes.

公开(公告)号：US08821636B2

公开(公告)日：2014-09-02

申请号：US12936450

申请日：2009-04-24

申请人： Takao Abe ,  Kouzou Yokota ,  Kouji Mizuishi

发明人： Takao Abe ,  Kouzou Yokota ,  Kouji Mizuishi

IPC分类号： C30B15/02 ,  C30B15/14 ,  C30B29/06 ,  C30B15/00 ,  C30B35/00

CPC分类号： C30B15/14 ,  C30B15/00 ,  C30B29/06 ,  C30B35/00 ,  Y10T117/1032 ,  Y10T117/1056 ,  Y10T117/1068

摘要： The present invention is a single-crystal manufacturing apparatus based on the Czochralski method having a main chamber configured to accommodate hot zone components including a crucible, and a pull chamber configured to accommodate and take out a single crystal pulled from a raw material melt, the apparatus further comprising a multipurpose chamber interchangeable with the pull chamber, wherein a heating means for heating a raw material charged into the crucible and a cooling means for cooling the hot zone components after pulling the single crystal are placeable in the multipurpose chamber respectively. As a result, there is provided a single-crystal manufacturing apparatus that enables, in manufacture of a single crystal of a large diameter, e.g., approximately 200 mm or more, an operating rate of the single-crystal manufacturing apparatus and productivity of the single crystal to be improved.

摘要翻译： 本发明是一种基于切克劳斯基法的单晶制造装置，其具有构造成容纳包括坩埚的热区部件的主室和被配置为容纳和取出从原料熔体拉出的单晶的拉腔， 该设备还包括与拉动室可互换的多用途室，其中用于加热装入坩埚的原料的加热装置和用于在拉出单晶之后冷却热区部件的冷却装置分别放置在多用途室中。 结果，提供了一种单晶制造装置，其能够在大直径的单晶例如约200mm以上的制造中，单晶制造装置的工作速率和单晶制造装置的生产率 水晶要改善。

公开(公告)号：US20140221330A1

公开(公告)日：2014-08-07

申请号：US14234456

申请日：2012-07-26

申请人： Akihiro Morinaka ,  Kazunori Maebashi ,  Takashi Ida ,  Muneo Hikida ,  Mototsugu Yamada ,  Takao Abe

发明人： Akihiro Morinaka ,  Kazunori Maebashi ,  Takashi Ida ,  Muneo Hikida ,  Mototsugu Yamada ,  Takao Abe

IPC分类号： C07C69/593 ,  A61K45/06 ,  C07C69/612 ,  A61K31/216 ,  C07C69/618 ,  C07C69/732 ,  C07D309/06 ,  A61K31/351 ,  C07C69/608 ,  C07D213/55 ,  A61K31/4406 ,  C07D295/108 ,  A61K31/5375 ,  C07D211/46 ,  A61K31/45 ,  C07D233/64 ,  A61K31/4174 ,  C07D207/12 ,  A61K31/4015 ,  A61K31/225

CPC分类号： C07C69/593 ,  A61K31/194 ,  A61K31/216 ,  A61K31/225 ,  A61K31/351 ,  A61K31/40 ,  A61K31/4015 ,  A61K31/407 ,  A61K31/4164 ,  A61K31/4174 ,  A61K31/4406 ,  A61K31/45 ,  A61K31/5375 ,  A61K45/06 ,  C07C57/13 ,  C07C57/26 ,  C07C57/30 ,  C07C57/42 ,  C07C57/48 ,  C07C57/50 ,  C07C59/46 ,  C07C59/64 ,  C07C63/66 ,  C07C69/608 ,  C07C69/612 ,  C07C69/618 ,  C07C69/732 ,  C07C217/18 ,  C07C233/65 ,  C07C235/20 ,  C07C237/22 ,  C07C279/08 ,  C07D207/12 ,  C07D211/46 ,  C07D213/55 ,  C07D233/64 ,  C07D295/108 ,  C07D309/06 ,  Y02A50/473 ,  A61K2300/00

摘要： An objective of the present invention is to provide a novel NDM (New Delhi metallo-β-lactamase) inhibitor that functions as a drug for restoring the antibacterial activity of β-lactam antibiotics that have been inactivated as a result of decomposition by NDM. According to the present invention, there is provided an NDM inhibitor contains a compound represented by general formula (I):

摘要翻译： 本发明的目的是提供一种新型的NDM（新德里金属 - β-内酰胺酶）抑制剂，其作为恢复由NDM分解而灭活的β-内酰胺抗生素的抗菌活性的药物 。 根据本发明，提供了含有通式（I）表示的化合物的NDM抑制剂：

公开(公告)号：US08337616B2

公开(公告)日：2012-12-25

申请号：US12734423

申请日：2008-12-01

申请人： Takao Abe

发明人： Takao Abe

IPC分类号： C30B35/00 ,  C30B15/00

CPC分类号： C30B29/06 ,  C30B15/16 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

摘要： A single-crystal manufacturing apparatus comprises a chamber, a crucible in the chamber, a heater arranged around the crucible, a lifting mechanism for lifting a seed crystal, and a guide passage for the seed crystal and a grown single crystal. In the single-crystal manufacturing apparatus, a material polycrystal contained the crucible is melted by a heater, and the seed crystal is made to contact the molten polycrystal and is lifted. The single-crystal manufacturing apparatus comprises a cylindrical quartz tube having a curved bottom portion, and a dome-shaped quartz plate. The curved bottom portion faces the crucible from the upper portion of the chamber through the guide passage. The quartz plate is arranged to enclose the quartz tube. The quartz tube has a reflecting structure for reflecting a heat ray from at least its bottom portion whereas the quartz plate has a reflecting structure for reflecting the heat ray to the crucible.

摘要翻译： 单晶体制造装置包括室，坩埚在室内，在坩埚周围设置的加热器，用于提升晶种的提升机构，以及用于晶种的引导通道和生长的单晶。 在单晶体制造装置中，包含坩埚的多晶体被加热器熔化，使晶种与熔融的多晶体接触并提升。 单晶制造装置包括具有弯曲底部的圆柱形石英管和圆顶状石英板。 弯曲的底部部分通过引导通道从腔室的上部面向坩埚。 石英板被设置成封闭石英管。 石英管具有用于从至少其底部反射热射线的反射结构，而石英板具有用于将热射线反射到坩埚的反射结构。