公开(公告)号：US09082945B2

公开(公告)日：2015-07-14

申请号：US13339060

申请日：2011-12-28

申请人： Takao Fujimori ,  Yasuo Nakanishi ,  Nobuaki Matsui ,  Hirotaka Obuchi

发明人： Takao Fujimori ,  Yasuo Nakanishi ,  Nobuaki Matsui ,  Hirotaka Obuchi

IPC分类号： F21V1/00 ,  H01L33/60 ,  F21V7/00

CPC分类号： H01L33/60 ,  F21V7/00 ,  H01L33/486 ,  H01L33/62 ,  H01L2224/16225

摘要： A light emitting element unit according to the present invention includes a semiconductor light emitting element that has a surface, a back surface, and a side surface, where the surface or the back surface is a light extracting surface from which light generated inside is emitted, a submount which has a bottom wall and a side wall, has a recess portion defined by the bottom wall and the side wall, and supports the semiconductor light emitting element by the bottom wall in a position in which the light extracting surface is directed upward at the recess portion, and has an inclined surface on the side wall, inclined at a predetermined angle with respect to the bottom wall so as to face the side surface of the semiconductor light emitting element, and a light reflecting film formed on the inclined surface of the submount.

摘要翻译： 根据本发明的发光元件单元包括具有表面，后表面和侧表面的半导体发光元件，其中表面或背表面是从其发射的光的光提取表面， 具有底壁和侧壁的基座具有由底壁和侧壁限定的凹部，并且通过底壁将光提取表面向上指向的位置支撑半导体发光元件 所述凹部具有在所述侧壁上的倾斜面，相对于所述底壁以与所述半导体发光元件的侧面相对的方式倾斜预定角度，并且形成在所述倾斜面上的光反射膜 底座。

公开(公告)号：US08686433B2

公开(公告)日：2014-04-01

申请号：US13601527

申请日：2012-08-31

申请人： Nobuaki Matsui ,  Hirotaka Obuchi ,  Yasuo Nakanishi ,  Kazuaki Tsutsumi ,  Takao Fujimori

发明人： Nobuaki Matsui ,  Hirotaka Obuchi ,  Yasuo Nakanishi ,  Kazuaki Tsutsumi ,  Takao Fujimori

IPC分类号： H01L33/32

CPC分类号： H01L33/60 ,  H01L33/0075 ,  H01L33/22 ,  H01L33/32 ,  H01L33/46 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2933/0058 ,  H01L2924/00014

摘要： A light emitting device includes a light emitting layer, a substrate that is transparent to an emission wavelength of the light emitting layer and positioned to receive an emission wavelength from the light emitting layer, a convex pattern including a collection of a plurality of convex portions discretely arranged on a front surface of the substrate with a first pitch, an n type nitride semiconductor layer located on the front surface of the substrate to cover the convex pattern and a p type nitride semiconductor layer located on the light emitting layer. The light emitting layer is located on the n type semiconductor layer. Each of the convex portions includes a sub convex pattern comprising a plurality of fine convex portions discretely formed at the top of the convex portion with a second pitch smaller than the first pitch, and a base supporting the sub convex pattern.

摘要翻译： 发光器件包括发光层，对于发光层的发射波长透明并且被定位成从发光层接收发光波长的衬底，包括多个凸起部分的离散集合的凸形图案 以第一间距布置在衬底的前表面上，位于衬底的前表面上的n型氮化物半导体层以覆盖位于发光层上的凸形图案和ap型氮化物半导体层。 发光层位于n型半导体层上。 每个凸起部分包括一个副凸起的图案，该凸出的凹凸图形包括多个微细凸起部分，该凹凸部分离开地形成在凸起部分的顶部，具有比第一间距小的第二间距，以及支撑该子凸形图案的基部。

公开(公告)号：US20120162984A1

公开(公告)日：2012-06-28

申请号：US13339060

申请日：2011-12-28

申请人： Takao FUJIMORI ,  Yasuo Nakanishi ,  Nobuaki Matsui ,  Hirotaka Obuchi

发明人： Takao FUJIMORI ,  Yasuo Nakanishi ,  Nobuaki Matsui ,  Hirotaka Obuchi

IPC分类号： F21V7/00 ,  H01L33/60

CPC分类号： H01L33/60 ,  F21V7/00 ,  H01L33/486 ,  H01L33/62 ,  H01L2224/16225

摘要： A light emitting element unit according to the present invention includes a semiconductor light emitting element that has a surface, a back surface, and a side surface, where the surface or the back surface is a light extracting surface from which light generated inside is emitted, a submount which has a bottom wall and a side wall, has a recess portion defined by the bottom wall and the side wall, and supports the semiconductor light emitting element by the bottom wall in a position in which the light extracting surface is directed upward at the recess portion, and has an inclined surface on the side wall, inclined at a predetermined angle with respect to the bottom wall so as to face the side surface of the semiconductor light emitting element, and a light reflecting film formed on the inclined surface of the submount.

摘要翻译： 根据本发明的发光元件单元包括具有表面，后表面和侧表面的半导体发光元件，其中表面或背表面是从其发射的光的光提取表面， 具有底壁和侧壁的基座具有由底壁和侧壁限定的凹部，并且通过底壁将光提取表面向上指向的位置支撑半导体发光元件 所述凹部具有在所述侧壁上的倾斜面，相对于所述底壁以与所述半导体发光元件的侧面相对的方式倾斜预定角度，并且形成在所述倾斜面上的光反射膜 底座。

公开(公告)号：US09166111B2

公开(公告)日：2015-10-20

申请号：US13976900

申请日：2011-12-27

申请人： Nobuaki Matsui ,  Hirotaka Obuchi

发明人： Nobuaki Matsui ,  Hirotaka Obuchi

IPC分类号： H01L33/00 ,  H01L33/40 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44

CPC分类号： H01L33/24 ,  H01L33/32 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/56 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/00014

摘要： In a light-emitting element 1, a light-emitting layer 4, a second conductivity type semiconductor layer 5, a transparent electrode layer 6, a reflecting electrode layer 7 and an insulating layer 8 are stacked in this order on a first conductivity type semiconductor layer 3, while a first electrode layer 10 and a second electrode layer 12 are stacked on the insulating layer 8 in an isolated state. The light-emitting element 1 includes a plurality of insulating tube layers 9, discretely arranged in plan view, passing through the reflecting electrode layer 7, the transparent electrode layer 6, the second conductivity type semiconductor layer 5 and the light-emitting layer 4 continuously from the insulating layer 8 and reaching the first conductivity type semiconductor layer 3, first contacts 11, continuous from the first electrode layer 10, connected to the first conductivity type semiconductor layer 3 through the insulating layer 8 and the insulating tube layers 9, and second contacts 13, continuous from the second electrode layer 12, passing through the insulating layer 8 to be connected to the reflecting electrode layer 7.

摘要翻译： 在发光元件1中，依次将发光层4，第二导电型半导体层5，透明电极层6，反射电极层7和绝缘层8层叠在第一导电型半导体 层3，而第一电极层10和第二电极层12以孤立状态堆叠在绝缘层8上。 发光元件1包括分散配置在平面图中的多个绝缘管层9，连续地穿过反射电极层7，透明电极层6，第二导电类型半导体层5和发光层4 从绝缘层8到达第一导电型半导体层3，通过绝缘层8和绝缘管层9连接到第一导电类型半导体层3的与第一电极层10连续的第一触点11和第二触点11 从第二电极层12连续的通过绝缘层8连接到反射电极层7的触点13。

公开(公告)号：US20130277696A1

公开(公告)日：2013-10-24

申请号：US13976900

申请日：2011-12-27

申请人： Nobuaki Matsui ,  Hirotaka Obuchi

发明人： Nobuaki Matsui ,  Hirotaka Obuchi

IPC分类号： H01L33/40

CPC分类号： H01L33/24 ,  H01L33/32 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/56 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/00014

摘要： In a light-emitting element 1, a light-emitting layer 4, a second conductivity type semiconductor layer 5, a transparent electrode layer 6, a reflecting electrode layer 7 and an insulating layer 8 are stacked in this order on a first conductivity type semiconductor layer 3, while a first electrode layer 10 and a second electrode layer 12 are stacked on the insulating layer 8 in an isolated state. The light-emitting element 1 includes a plurality of insulating tube layers 9, discretely arranged in plan view, passing through the reflecting electrode layer 7, the transparent electrode layer 6, the second conductivity type semiconductor layer 5 and the light-emitting layer 4 continuously from the insulating layer 8 and reaching the first conductivity type semiconductor layer 3, first contacts 11, continuous from the first electrode layer 10, connected to the first conductivity type semiconductor layer 3 through the insulating layer 8 and the insulating tube layers 9, and second contacts 13, continuous from the second electrode layer 12, passing through the insulating layer 8 to be connected to the reflecting electrode layer 7.

摘要翻译： 在发光元件1中，依次将发光层4，第二导电型半导体层5，透明电极层6，反射电极层7和绝缘层8层叠在第一导电型半导体 层3，而第一电极层10和第二电极层12以孤立状态堆叠在绝缘层8上。 发光元件1包括分散配置在平面图中的多个绝缘管层9，连续地穿过反射电极层7，透明电极层6，第二导电类型半导体层5和发光层4 从绝缘层8到达第一导电型半导体层3，通过绝缘层8和绝缘管层9连接到第一导电类型半导体层3的与第一电极层10连续的第一触点11和第二触点11 从第二电极层12连续的通过绝缘层8连接到反射电极层7的触点13。

公开(公告)号：US20090179215A1

公开(公告)日：2009-07-16

申请号：US12318831

申请日：2009-01-09

申请人： Nobuaki Matsui ,  Yasuo Nakanishi

发明人： Nobuaki Matsui ,  Yasuo Nakanishi

IPC分类号： H01L33/00 ,  H01L21/318

CPC分类号： H01L33/40 ,  H01L33/32 ,  H01L33/42

摘要： A semiconductor light emitting device includes a first metal layer placed on the p-type semiconductor layer on the substrate, and includes a first pattern width W1; a second metal layer on the first metal layer; a transparent electrode layer on the second metal layer and the p type semiconductor layer, and has an opening patterned with a second pattern width W2 on the second metal layer; an insulating film the transparent electrode layer and the second metal layer, and has an opening patterned with third pattern width W3 on the second metal layer; a reflective stacked film on the insulating film, and has an opening patterned with third pattern width W3 on the second metal layer; a third metal layer on the second metal layer of an opening patterned with the reflective stacked film and third pattern width W3; and a fourth metal layer on the third metal layer.

摘要翻译： 半导体发光器件包括：第一金属层，设置在基板上的p型半导体层上，并且包括第一图案宽度W1; 第一金属层上的第二金属层; 在第二金属层和p型半导体层上的透明电极层，并且具有在第二金属层上以第二图案宽度W2图案化的开口; 绝缘膜，透明电极层和第二金属层，并且具有在第二金属层上以第三图案宽度W3图案化的开口; 绝缘膜上的反射层叠膜，并且在第二金属层上具有用第三图案宽度W3图案化的开口; 在反射层叠膜图案化的开口的第二金属层上的第三金属层和第三图案宽度W3; 以及第三金属层上的第四金属层。

公开(公告)号：US08115222B2

公开(公告)日：2012-02-14

申请号：US12318831

申请日：2009-01-09

申请人： Nobuaki Matsui ,  Yasuo Nakanishi

发明人： Nobuaki Matsui ,  Yasuo Nakanishi

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L33/32 ,  H01L33/42

摘要： A semiconductor light emitting device includes a first metal layer placed on the p-type semiconductor layer on the substrate, and includes a first pattern width W1; a second metal layer on the first metal layer; a transparent electrode layer on the second metal layer and the p type semiconductor layer, and has an opening patterned with a second pattern width W2 on the second metal layer; an insulating film the transparent electrode layer and the second metal layer, and has an opening patterned with third pattern width W3 on the second metal layer; a reflective stacked film on the insulating film, and has an opening patterned with third pattern width W3 on the second metal layer; a third metal layer on the second metal layer of an opening patterned with the reflective stacked film and third pattern width W3; and a fourth metal layer on the third metal layer.

摘要翻译： 半导体发光器件包括：第一金属层，设置在基板上的p型半导体层上，并且包括第一图案宽度W1; 第一金属层上的第二金属层; 在第二金属层和p型半导体层上的透明电极层，并且具有在第二金属层上以第二图案宽度W2图案化的开口; 绝缘膜，透明电极层和第二金属层，并且具有在第二金属层上以第三图案宽度W3图案化的开口; 绝缘膜上的反射层叠膜，并且在第二金属层上具有用第三图案宽度W3图案化的开口; 在反射层叠膜图案化的开口的第二金属层上的第三金属层和第三图案宽度W3; 以及第三金属层上的第四金属层。

公开(公告)号：US06697882B1

公开(公告)日：2004-02-24

申请号：US09598198

申请日：2000-06-21

申请人： Nobuaki Matsui

发明人： Nobuaki Matsui

IPC分类号： G06F300

CPC分类号： G06F12/0215 ,  G06F13/28

摘要： A rendering processor has source, pattern, destination prefetch/write units and DMA controllers. Each DMA controller enqueues a transaction such as a memory read/write in a transaction queue. A memory controller processes transactions in the queue in the FIFO order. A prefetch unit determines whether or not data is prefetched to a line end, and if the determination is affirmative, postpones a prefetch until completion of the write-back of the prefetched data.

摘要翻译： 渲染处理器具有源，模式，目的地预取/写入单元和DMA控制器。 每个DMA控制器将事务排队，如事务队列中的内存读/写。 内存控制器以FIFO顺序处理队列中的事务。 预取单元确定数据是否被预取到行末端，并且如果确定是肯定的，则推迟预取直到完成对预取数据的回写。

公开(公告)号：US08294912B2

公开(公告)日：2012-10-23

申请号：US12428886

申请日：2009-04-23

申请人： Nobuaki Matsui ,  Ken Achiwa

发明人： Nobuaki Matsui ,  Ken Achiwa

IPC分类号： G06F3/12

CPC分类号： H04N1/46

摘要： Conventionally, pixel data are converted into the tile sequence. According to this invention, span information or run-length information during conversion into pixel data from vector data such as a display list converted from a page description language is converted into the tile sequence before rendering into pixel data. This can greatly reduce the amount of data temporarily stored for conversion into the tile sequence.

摘要翻译： 通常，像素数据被转换成瓦片序列。 根据本发明，在从诸如从页面描述语言转换的显示列表之类的向量数据转换成像素数据期间的跨度信息或游程长度信息在渲染成像素数据之前被转换为图块序列。 这可以大大减少临时存储的用于转换为瓦片序列的数据量。

公开(公告)号：US20100332797A1

公开(公告)日：2010-12-30

申请号：US12824035

申请日：2010-06-25

申请人： Nobuaki Matsui

发明人： Nobuaki Matsui

IPC分类号： G06F15/76 ,  G06F9/02

CPC分类号： G06F9/4405 ,  G06F1/10 ,  G06F1/24 ,  G06F1/3203 ,  G06F1/3237 ,  G06F9/4418 ,  Y02D10/128

摘要： An information processing apparatus includes a first processing unit, a second processing unit which is different from the first processing unit, a supply unit configured to supply a clock to the first processing unit and the second processing unit, and a control unit configured to control the supply unit in such a manner as to stop a supply of the clock to the second processing unit in response to completion of activation of the second processing unit, and to resume the supply of the clock to the second processing unit in response to completion of activation of the first processing unit.

摘要翻译： 信息处理装置包括：第一处理单元，与第一处理单元不同的第二处理单元，被配置为向第一处理单元和第二处理单元提供时钟的供给单元，以及控制单元， 供应单元，以响应于第二处理单元的激活完成而停止向第二处理单元提供时钟，并且响应于激活完成恢复向第二处理单元提供时钟 的第一处理单元。