公开(公告)号：US08686433B2

公开(公告)日：2014-04-01

申请号：US13601527

申请日：2012-08-31

申请人： Nobuaki Matsui ,  Hirotaka Obuchi ,  Yasuo Nakanishi ,  Kazuaki Tsutsumi ,  Takao Fujimori

发明人： Nobuaki Matsui ,  Hirotaka Obuchi ,  Yasuo Nakanishi ,  Kazuaki Tsutsumi ,  Takao Fujimori

IPC分类号： H01L33/32

CPC分类号： H01L33/60 ,  H01L33/0075 ,  H01L33/22 ,  H01L33/32 ,  H01L33/46 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2933/0058 ,  H01L2924/00014

摘要： A light emitting device includes a light emitting layer, a substrate that is transparent to an emission wavelength of the light emitting layer and positioned to receive an emission wavelength from the light emitting layer, a convex pattern including a collection of a plurality of convex portions discretely arranged on a front surface of the substrate with a first pitch, an n type nitride semiconductor layer located on the front surface of the substrate to cover the convex pattern and a p type nitride semiconductor layer located on the light emitting layer. The light emitting layer is located on the n type semiconductor layer. Each of the convex portions includes a sub convex pattern comprising a plurality of fine convex portions discretely formed at the top of the convex portion with a second pitch smaller than the first pitch, and a base supporting the sub convex pattern.

摘要翻译： 发光器件包括发光层，对于发光层的发射波长透明并且被定位成从发光层接收发光波长的衬底，包括多个凸起部分的离散集合的凸形图案 以第一间距布置在衬底的前表面上，位于衬底的前表面上的n型氮化物半导体层以覆盖位于发光层上的凸形图案和ap型氮化物半导体层。 发光层位于n型半导体层上。 每个凸起部分包括一个副凸起的图案，该凸出的凹凸图形包括多个微细凸起部分，该凹凸部分离开地形成在凸起部分的顶部，具有比第一间距小的第二间距，以及支撑该子凸形图案的基部。

公开(公告)号：US20130056748A1

公开(公告)日：2013-03-07

申请号：US13601527

申请日：2012-08-31

申请人： Nobuaki MATSUI ,  Hirotaka Obuchi ,  Yasuo Nakanishi ,  Kazuaki Tsutsumi ,  Takao Fujimori

发明人： Nobuaki MATSUI ,  Hirotaka Obuchi ,  Yasuo Nakanishi ,  Kazuaki Tsutsumi ,  Takao Fujimori

IPC分类号： H01L33/32

CPC分类号： H01L33/60 ,  H01L33/0075 ,  H01L33/22 ,  H01L33/32 ,  H01L33/46 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2933/0058 ,  H01L2924/00014

摘要： A light emitting device includes a light emitting layer, a substrate that is transparent to an emission wavelength of the light emitting layer and positioned to receive an emission wavelength from the light emitting layer, a convex pattern including a collection of a plurality of convex portions discretely arranged on a front surface of the substrate with a first pitch, an n type nitride semiconductor layer located on the front surface of the substrate to cover the convex pattern and a p type nitride semiconductor layer located on the light emitting layer. The light emitting layer is located on the n type semiconductor layer. Each of the convex portions includes a sub convex pattern comprising a plurality of fine convex portions discretely formed at the top of the convex portion with a second pitch smaller than the first pitch, and a base supporting the sub convex pattern.

摘要翻译： 发光器件包括发光层，对于发光层的发射波长透明并且被定位成从发光层接收发光波长的衬底，包括多个凸起部分的离散集合的凸形图案 以第一间距布置在衬底的前表面上，位于衬底的前表面上的n型氮化物半导体层以覆盖位于发光层上的凸形图案和ap型氮化物半导体层。 发光层位于n型半导体层上。 每个凸起部分包括一个副凸起的图案，该凸出的凹凸图形包括多个微细凸起部分，该凹凸部分离开地形成在凸起部分的顶部，具有比第一间距小的第二间距，以及支撑该子凸形图案的基部。

公开(公告)号：US08415682B2

公开(公告)日：2013-04-09

申请号：US12318118

申请日：2008-12-22

申请人： Yasuo Nakanishi ,  Masayuki Sonobe ,  Kazuaki Tsutsumi

发明人： Yasuo Nakanishi ,  Masayuki Sonobe ,  Kazuaki Tsutsumi

IPC分类号： H01L27/00

CPC分类号： H01L33/12 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/22 ,  H01L33/32

摘要： A semiconductor light emitting device and a fabrication method for the semiconductor light emitting device whose outward luminous efficiency improved are provided and the semiconductor light emitting device includes a substrate; a protective film placed on the substrate; an n-type semiconductor layer which is placed on the substrate pinched by a protective film and on the protective film, and is doped with an n-type impurity; an active layer placed on the n-type semiconductor layer, and a p-type semiconductor layer placed on the active layer and is doped with a p-type impurity.

摘要翻译： 提供一种半导体发光器件及其外部发光效率提高的半导体发光器件的制造方法，并且半导体发光器件包括衬底; 保护膜放置在基板上; n型半导体层，其被放置在由保护膜夹持的基板上并在保护膜上，并掺杂有n型杂质; 放置在n型半导体层上的有源层以及置于有源层上并掺杂有p型杂质的p型半导体层。

公开(公告)号：US20090166608A1

公开(公告)日：2009-07-02

申请号：US12318118

申请日：2008-12-22

申请人： Yasuo Nakanishi ,  Masayuki Sonobe ,  Kazuaki Tsutsumi

发明人： Yasuo Nakanishi ,  Masayuki Sonobe ,  Kazuaki Tsutsumi

IPC分类号： H01L33/00

CPC分类号： H01L33/12 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/22 ,  H01L33/32

摘要： A semiconductor light emitting device and a fabrication method for the semiconductor light emitting device whose outward luminous efficiency improved are provided and the semiconductor light emitting device includes a substrate; a protective film placed on the substrate; an n-type semiconductor layer which is placed on the substrate pinched by a protective film and on the protective film, and is doped with an n-type impurity; an active layer placed on the n-type semiconductor layer, and a p-type semiconductor layer placed on the active layer and is doped with a p-type impurity.

摘要翻译： 提供一种半导体发光器件及其外部发光效率提高的半导体发光器件的制造方法，并且半导体发光器件包括衬底; 保护膜放置在基板上; n型半导体层，其被放置在由保护膜夹持的基板上并在保护膜上，并掺杂有n型杂质; 放置在n型半导体层上的有源层以及置于有源层上并掺杂有p型杂质的p型半导体层。

公开(公告)号：US20100102341A1

公开(公告)日：2010-04-29

申请号：US12452049

申请日：2008-06-03

申请人： Kazuaki Tsutsumi ,  Yohei Ito ,  Yasuo Nakanishi ,  Shunji Nakata

发明人： Kazuaki Tsutsumi ,  Yohei Ito ,  Yasuo Nakanishi ,  Shunji Nakata

IPC分类号： H01L33/00 ,  H01L21/302

CPC分类号： H01L33/22 ,  H01L33/20 ,  H01L33/32

摘要： A semiconductor light emitting device includes: a transparent substrate including a first principal surface and a second principal surface opposite with the first principal surface, in which side surfaces between the first principal surface and the second principal surface are rough surfaces; and a semiconductor light emitting element that is arranged on the first principal surface of the transparent substrate and is composed by stacking nitride semiconductors on each other.

摘要翻译： 一种半导体发光器件包括：透明基板，包括第一主表面和与第一主表面相对的第二主表面，其中第一主表面和第二主表面之间的侧表面是粗糙表面; 以及半导体发光元件，其配置在透明基板的第一主面上，并且由氮化物半导体构成。

公开(公告)号：US20090014839A1

公开(公告)日：2009-01-15

申请号：US12223785

申请日：2007-02-08

申请人： Masayuki Sonobe ,  Norikazu Ito ,  Kazuaki Tsutsumi ,  Tetsuya Fujiwara

发明人： Masayuki Sonobe ,  Norikazu Ito ,  Kazuaki Tsutsumi ,  Tetsuya Fujiwara

IPC分类号： H01L29/20

CPC分类号： H01L33/305 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/025 ,  H01S5/3063 ,  H01S5/32341

摘要： A nitride-based semiconductor device includes: an n-GaN layer 103; an active layer 104 formed on the n-GaN layer 103; a first AlGaN layer 105 formed on the active layer 104 at a growth temperature ranging from 900 to 1200° C. and by doping of Mg at a doping concentration ranging from 5×1019 to 2×1020/cm3; a second AlGaN layer 106 formed on the first AlGaN layer 105 at a growth temperature ranging from 900 to 1200° C.; and a p-GaN layer 107 formed on the second AlGaN layer 106.

摘要翻译： 氮化物类半导体器件包括：n-GaN层103; 形成在n-GaN层103上的有源层104; 在900〜1200℃的生长温度下在有源层104上形成的第一AlGaN层105，并以5×10 19〜2×10 20 / cm 3的掺杂浓度掺杂Mg; 在900〜1200℃的生长温度下形成在第一AlGaN层105上的第二AlGaN层106。 以及形成在第二AlGaN层106上的p-GaN层107。

公开(公告)号：US20100035410A1

公开(公告)日：2010-02-11

申请号：US12086418

申请日：2006-12-07

申请人： Masayuki Sonobe ,  Norikazu Ito ,  Kazuaki Tsutsumi ,  Tetsuya Fujiwara ,  Shinichi Tamai

发明人： Masayuki Sonobe ,  Norikazu Ito ,  Kazuaki Tsutsumi ,  Tetsuya Fujiwara ,  Shinichi Tamai

IPC分类号： H01L21/20

CPC分类号： C23C16/303 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

摘要： To provide a method for manufacturing InGaN which causes less segregation of In and achieves high crystallinity of an InGaN layer with the proportion of In increased.The method for manufacturing an InGaN layer including growing an InGaN layer under conditions of a growth temperature of 700 to 790° C., a growth rate of 30 to 93 Å/min, and a flow rate of trimethylindium of 0.882×10−5 to 3.53×10−5 mol/min.

摘要翻译： 提供一种制造InGaN的方法，其使In的偏析较少，并且In增加的InGaN层的结晶度达到高结晶度。 InGaN层的制造方法，包括在生长温度为700〜790℃，生长速度为30〜93 /分钟，三甲基铟的流量为0.882×10 -5〜3.53的条件下生长InGaN层 x 10 -5 mol / min。

公开(公告)号：US20090272992A1

公开(公告)日：2009-11-05

申请号：US12223739

申请日：2007-02-08

申请人： Kazuaki Tsutsumi ,  Norikazu Ito ,  Masayuki Sonobe ,  Shinichi Tamai

发明人： Kazuaki Tsutsumi ,  Norikazu Ito ,  Masayuki Sonobe ,  Shinichi Tamai

IPC分类号： H01L33/00

CPC分类号： H01L33/007 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262

摘要： A semiconductor light emitting device of the present invention includes a substrate (1), an n-GaN layer (2) supported by the substrate (1), a p-GaN layer (7) which is located farther from the substrate (1) than the n-GaN layer (2) is, an active layer (4) formed between the n-GaN layer (2) and the p-GaN layer (7) and containing InGaN, a sublimation preventing layer (5) formed between the active layer (4) and the p-GaN layer (7) and containing InGaN, and an In composition gradient layer (6) sandwiched between the sublimation preventing layer (5) and the p-GaN layer (7) and having such In composition ratio gradient that the In composition ratio decreases in the thickness direction toward the p-GaN layer (7).

摘要翻译： 本发明的半导体发光器件包括：衬底（1），由衬底（1）支撑的n-GaN层（2），位于离衬底（1）更远的p-GaN层（7） 在n-GaN层（2）中，形成在n-GaN层（2）和p-GaN层（7）之间并含有InGaN的有源层（4），形成在该GaN衬底之间的升华防止层（5） 有源层（4）和p-GaN层（7）并且包含InGaN，以及夹在升华防止层（5）和p-GaN层（7）之间的In组成梯度层（6），并且具有这样的In组成 In组成比在厚度方向朝向p-GaN层（7）减小的比率梯度。

公开(公告)号：US20100065812A1

公开(公告)日：2010-03-18

申请号：US12227693

申请日：2006-05-26

申请人： Ken Nakahara ,  Norikazu Ito ,  Kazuaki Tsutsumi

发明人： Ken Nakahara ,  Norikazu Ito ,  Kazuaki Tsutsumi

IPC分类号： H01L33/04

CPC分类号： H01L33/04 ,  H01L33/06 ,  H01L33/32

摘要： Provided is a nitride semiconductor light emitting element having an improved carrier injection efficiency from a p-type nitride semiconductor layer to an active layer by simple means from a viewpoint utterly different from the prior art. A buffer layer 2, an undoped GaN layer 3, an n-type GaN contact layer 4, an InGaN/GaN superlattice layer 5, an active layer 6, an undoped InGaN layer 7, and a p-type GaN-based contact layer 8 are stacked on a sapphire substrate 1. A p-electrode 9 is formed on the p-type GaN-based contact layer 8. An n-electrode 10 is formed on a surface where the n-type GaN contact layer 4 is exposed as a result of mesa-etching. The undoped InGaN layer 7 is included in an intermediate semiconductor layer formed between the p-type GaN-based contact layer 8 and a well layer closest to a p-side in the active layer having a quantum well structure. The carrier injection efficiency into the active layer 6 can be improved by making the total film thickness of the intermediate semiconductor layer 20 nm or less.

摘要翻译： 提供了从与现有技术完全不同的观点，通过简单的手段，具有从p型氮化物半导体层到活性层的载流子注入效率提高的氮化物半导体发光元件。 缓冲层2，未掺杂的GaN层3，n型GaN接触层4，InGaN / GaN超晶格层5，有源层6，未掺杂的InGaN层7和p型GaN基接触层8 堆叠在蓝宝石衬底1上。在p型GaN基接触层8上形成p电极9.在n型GaN接触层4暴露的表面上形成n电极10作为 台面蚀刻的结果。 未掺杂的InGaN层7包括在形成在具有量子阱结构的有源层中的p型GaN基接触层8和最靠近p侧的阱层之间的中间半导体层中。 通过使中间半导体层的总膜厚为20nm以下，能够提高进入有源层6的载流子注入效率。

公开(公告)号：US20090206357A1

公开(公告)日：2009-08-20

申请号：US11884456

申请日：2006-02-15

申请人： Norikazu Ito ,  Kazuaki Tsutsumi ,  Toshio Nishida ,  Masayuki Sonobe ,  Mitsuhiko Sakai ,  Atsushi Yamaguchi

发明人： Norikazu Ito ,  Kazuaki Tsutsumi ,  Toshio Nishida ,  Masayuki Sonobe ,  Mitsuhiko Sakai ,  Atsushi Yamaguchi

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/20

摘要： There is provided a nitride semiconductor light emitting device in which a semiconductor layer is not broken easily even when a reverse voltage is applied or even in long time operation, and excellent reliability is obtained, by preventing semiconductor layers from deterioration when manufacturing a device. On a surface of a substrate (1), a semiconductor lamination portion (6) made of nitride semiconductor, including a first conductivity type layer (p-type layer (5)) and a second conductivity type layer (n-type layer (3)), is formed, a p-side electrode (8) is provided through a light transmitting conductive layer (7) thereon electrically connected to the p-type layer (5), and an n-side electrode (9) is provided electrically connected to the n-type layer (3) of the lower layer side of the semiconductor lamination portion(6). A mesa-like semiconductor lamination portion (6a) is formed by removing a part of the semiconductor lamination portion (6) around a chip by etching, and the mesa-like semiconductor lamination portion (6a) is formed such that a corner part having an angle of 90 degrees or less is rounded and has a curved line in a plan shape, thereby not to have an angle of 90 degrees or less on corner parts.

摘要翻译： 提供了一种氮化物半导体发光器件，其中即使当施加反向电压或者甚至长时间操作时，半导体层也不容易损坏，并且通过在制造器件时防止半导体层劣化，可以获得优异的可靠性。 在基板（1）的表面上，由氮化物半导体构成的包括第一导电型层（p型层（5））和第二导电型层（n型层（3））的半导体层叠部（6） ）），通过其上与p型层（5）电连接的透光导电层（7）设置p侧电极（8），并且n侧电极（9）电气地 连接到半导体层叠部分（6）的下层侧的n型层（3）。 通过蚀刻去除芯片周围的半导体层叠部分（6）的一部分形成台面状半导体层叠部（6a），并且形成台面状半导体层叠部（6a），使得具有 90度以下的角度是圆形的，并且具有平面形状的曲线，从而在角部不具有90度或更小的角度。