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1.发明授权Multi-digit fluorescent display tube with differently spaced planar control grid sections 失效具有不同间距平面控制网格的多数位荧光显示管
公开(公告)号：US4045704A
公开(公告)日：1977-08-30
申请号：US694666
申请日：1976-06-10
申请人： Takao Kishino , Yukihiko Utamura
发明人： Takao Kishino , Yukihiko Utamura
CPC分类号： H01J31/15
摘要： A multi-digit fluorescent display tube is disclosed. The display tube includes a plurality of indicating patterns arranged in a row in spaced side-by-side relational along the longitudinal width of a substrate, a filament stretched along the longitudinal direction of the indicating patterns and a control grid disposed between the filament and the indicating pattern, wherein the control grid is positioned in different plane distances with respect to the filament so as to adjust the perveance in each of the indicating patterns and to obtain an uniform brightness of the indicating patterns.
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公开(公告)号：US4049993A
公开(公告)日：1977-09-20
申请号：US689902
申请日：1976-05-25
申请人： Takao Kishino , Yukihiko Utamura
发明人： Takao Kishino , Yukihiko Utamura
CPC分类号： H01J31/15
摘要： A multi-digit fluorescent display tube comprising a multi-digit pattern display member including display units for respective digits disposed in parallel and composed of segment anodes, each segment anode having a phosphor layer, and at least one cathode stretched along the longitudinal direction of the pattern display member to confront the respective multi-digit pattern display units in common, wherein the cathode is disposed in an inclined manner and the perveance in each display unit is adjusted, so that when the cathode is heated and actuated by a direct current power source, the display brightness is substantially uniform in the display units for respective digits.
摘要翻译： 一种多位荧光显示管，包括多位图形显示构件，其包括并列设置并且由段阳极组成的各个位的显示单元，每个段阳极具有磷光体层，以及至少一个沿着 图案显示部件共同面对相应的多位图案显示单元，其中阴极以倾斜的方式设置，并且调节每个显示单元中的阴影，使得当阴极被直流电源加热和致动时 显示单位的显示亮度基本相同。
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公开(公告)号：US4047074A
公开(公告)日：1977-09-06
申请号：US743357
申请日：1976-11-19
申请人： Takao Kishino , Nobuo Yamaguchi , Yukihiko Utamura
发明人： Takao Kishino , Nobuo Yamaguchi , Yukihiko Utamura
摘要： A multi-column fluorescent display tube having a filament cathode provided opposite to a plurality of fluorescent display sections, which comprises at least a filament damper made of an insulating material low in thermal conductivity and having contact sections for supporting and stretching the filament cathode under tension at the middle portion of the filament cathode, and filament damper supporters so formed that it can prevent electrification of the surface of the filament damper.
摘要翻译： 一种多列荧光显示管，其具有与多个荧光显示部相对设置的灯丝阴极，所述荧光显示管至少包括由导热性低的绝缘材料制成的灯丝阻尼器，并具有用于在拉伸下支撑和拉伸灯丝阴极的接触部分 在灯丝阴极的中间部分，以及如此形成的灯丝阻尼器支撑体，以防止灯丝阻尼器的表面带电。
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公开(公告)号：US4047072A
公开(公告)日：1977-09-06
申请号：US671150
申请日：1975-03-29
IPC分类号： H01J31/15 , H01J61/067 , H01J61/66
CPC分类号： H01J31/15
摘要： A multi-column fluorescent display tube having a casing composed of a base plate and a cover plate, multi-column pattern display sections each composed of a plurality of segment anodes with fluorescent material layers thereon provided on the upper surface of the base plate, cathodes provided opposite to the pattern display sections, electrification preventive layers provided around and in the vicinity of the segment anodes on the base plate and electrically connected to prevent electrification and to intercept an external electric field, and terminal lead-in wires provided outside the casing and air-tightly connected through the casing to the respective segment anodes, cathodes and electrification preventive layers.
摘要翻译： 一种多列荧光显示管，具有由基板和盖板构成的壳体，多列图案显示部分，分别由设置在基板的上表面上的多个具有荧光材料层的段阳极组成，阴极 与图案显示部相对设置的防电气层，设置在基板上的分段阳极周围和附近，电连接以防止起电并截断外部电场，以及设置在壳体外部的端子引入线， 通过外壳气密连接到相应的段阳极，阴极和防电气层。
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公开(公告)号：US4218495A
公开(公告)日：1980-08-19
申请号：US935154
申请日：1978-08-21
CPC分类号： H01L21/02422 , C23C14/221 , H01L21/0242 , H01L21/02425 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02631 , H01L29/04 , H01L31/07 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A Schottky barrier type solid-state element and a method of producing the same, the Schottky barrier type solid-state element comprising a Schottky barrier type element portion consisting of a metallic board and a semiconductor film layer provided on the metallic board, the metallic board being formed of such a metal as can form a Schottky barrier between itself and the semiconductor film layer, and a semiconductor-side terminal electrode provided on the external surface of the semiconductor film layer so as to obtain an ohmic contact therewith, wherein at least the semiconductor film layer is formed by what is called the ionized-cluster-beam deposition process.
摘要翻译： 一种肖特基势垒型固体元素及其制造方法，肖特基势垒型固体元素包括由金属板和设置在金属板上的半导体膜层构成的肖特基势垒型元件部，金属板 由能够在其与半导体膜层之间形成肖特基势垒的金属形成，并且设置在半导体膜层的外表面上以便与其形成欧姆接触的半导体侧端子电极，其中至少 半导体膜层由所谓的离子束聚束束沉积工艺形成。
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6.发明授权Ionized-cluster-beam deposition process for fabricating p-n junction semiconductor layers 失效用于制造p-n结半导体层的离子簇聚束束沉积工艺
公开(公告)号：US4161418A
公开(公告)日：1979-07-17
申请号：US908748
申请日：1978-05-23
IPC分类号： C30B23/08 , H01L21/203 , H01L21/363 , H01L29/04 , H01L31/0224 , H01L31/18 , C23C15/00
CPC分类号： H01L31/1804 , C30B23/08 , H01L21/02422 , H01L21/0245 , H01L21/02521 , H01L21/02532 , H01L21/02573 , H01L21/02631 , H01L29/04 , H01L31/022425 , Y02E10/547 , Y02P70/521
摘要： A p-n junction type solid-state element having at least a pair of p-n junction type semiconductor layers formed of a p-type semiconductor and an n-type semiconductor joined with each other and a method of producing the same, in which the p-type semiconductor and n-type semiconductor are formed and joined by forming at least one of the semiconductors using what is called the ionized-cluster-beam deposition process which evaporates a material to be deposited to form a vapor, injects the vapor into a vacuum region to form clusters of atoms, ionizes the clusters and electrically accelerates ionized clusters onto a substrate thereby forming a layer thereon.
摘要翻译： 具有由p型半导体和n型半导体形成的至少一对pn结型半导体层的pn结型固体元件及其制造方法，其中p型 通过使用蒸发要沉积的材料蒸发以形成蒸气的所谓的离子化聚束束沉积方法形成至少一个半导体并形成半导体和n型半导体，将蒸汽注入真空区域 形成原子簇，使簇电离并将离子簇电子加速到衬底上，从而在其上形成层。
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公开(公告)号：US4098919A
公开(公告)日：1978-07-04
申请号：US585597
申请日：1975-06-10
CPC分类号： C23C14/221 , H05B33/10 , Y10S148/045 , Y10S148/169
摘要： A process for producing a thin fluorescent film for electroluminescence includes the steps of heating a raw material, composed of a base material and an activator, within an enclosed type crucible so as to generate a mixed vapor, injecting the mixed vapor into a vacuum zone through means of an injection nozzle, projecting an electron beam into the injected mixed vapor so as to ionize the mixed vapor, accelerating the ionized mixed vapor by means of an electric field, and permitting the accelerated ionized mixed vapor to collide with a base plate so as to form a vapor-deposited film upon the base plate.
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公开(公告)号：US4066527A
公开(公告)日：1978-01-03
申请号：US705713
申请日：1976-07-15
IPC分类号： H01L21/203 , H01L21/285 , H01L29/04 , H01L31/18 , C23C15/00
CPC分类号： H01L31/1804 , H01L21/0242 , H01L21/02422 , H01L21/02425 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02631 , H01L21/28537 , H01L29/04 , Y02E10/547 , Y02P70/521 , Y10S117/915 , Y10S148/045 , Y10S148/169
摘要： A method of producing a semiconductor device comprising the step of forming a laminated element film on a substrate made of a material easy to cleave and easy to dissolve in various solvents such as water by successively depositing materials of the laminated element film on the substrate by what is called the ionized-cluster-deposition process so that crystalline film layers oriented by the crystal axis of the substrate material may be made to grow on the substrate, separating the laminated element film from the substrate by dissolving the substrate material in a solvent, and forming the semiconductor device by furnishing the separated laminated element film with suitable electrodes, etc.
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公开(公告)号：US4039699A
公开(公告)日：1977-08-02
申请号：US661860
申请日：1976-02-27
IPC分类号： C09K11/00 , H01J37/317 , B05D3/06
CPC分类号： C09K11/574 , H01J37/317
摘要： A method of preparing a phosphor by injection of activator ions which become luminescent centers into crystals of a base material of the phosphor comprising the steps of generating ions of an activator, accelerating the activator ions by giving kinetic energy thereto, irradiating and injecting the accelerated activator ions into the base material, and agitating the base material.An apparatus for preparing phosphor according to the method of the invention comprises an activator ion source section having an ion generating section for generating activator ions and an ion accelerating electrode section for accelerating and irradiating the generated activator ions into the base material of the phosphor, a base activating vessel section having an agitating means for containing the base material of the phosphor and for continuously circulating the same therein in order to uniformly irradiate the accelerated activator ions into the base material of the phosphor, and a vacuum sytem for providing a low-pressure atmosphere at least to the activator ion source section and the base activating vessel section.
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公开(公告)号：US4139857A
公开(公告)日：1979-02-13
申请号：US705696
申请日：1976-07-15
CPC分类号： H01L21/0242 , H01L21/02422 , H01L21/02425 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02631 , H01L29/04 , H01L31/07 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A Schottky barrier type solid-state element and a method of producing the same, the Schottky barrier type solid-state element comprising a Schottky barrier type element portion consisting of a metallic board and a semiconductor film layer provided on the metallic board, the metallic board being formed of such a metal as can form a Schottky barrier between itself and the semiconductor film layer, and a semiconductor-side terminal electrode provided on the external surface of the semiconductor film layer so as to obtain an ohmic contact therewith, wherein at least the semiconductor film layer is formed by what is called the ionized-cluster-beam deposition process.
摘要翻译： 一种肖特基势垒型固体元素及其制造方法，肖特基势垒型固体元素包括由金属板和设置在金属板上的半导体膜层构成的肖特基势垒型元件部，金属板 由能够在其与半导体膜层之间形成肖特基势垒的金属形成，并且设置在半导体膜层的外表面上以便与其形成欧姆接触的半导体侧端子电极，其中至少 半导体膜层由所谓的离子束聚束束沉积工艺形成。
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