利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

39 条记录 (耗时 0.024 秒)

    EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND METHOD FOR PRODUCING SAME
    1.
    发明申请
    EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND METHOD FOR PRODUCING SAME 审中-公开
    外延硅碳化物单晶基板及其制造方法

    公开(公告)号：US20130320357A1

    公开(公告)日：2013-12-05

    申请号：US13985810

    申请日：2012-04-20

    申请人： Takashi Aigo ,  Hiroshi Tsuge ,  Masakazu Katsuno ,  Tatsuo Fujimoto ,  Hirokatsu Yashiro ,  Wataru Ito

    发明人： Takashi Aigo ,  Hiroshi Tsuge ,  Masakazu Katsuno ,  Tatsuo Fujimoto ,  Hirokatsu Yashiro ,  Wataru Ito

    IPC分类号： H01L29/30

    CPC分类号： H01L29/30 ,  C23C16/325 ,  C30B25/02 ,  C30B25/20 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/1608

    摘要： Provided are an epitaxial silicon carbide single crystal substrate having a high-quality silicon carbide single crystal thin film with less stacking faults on a silicon carbide single crystal substrate and a production method therefor. The epitaxial silicon carbide single crystal substrate is produced by growing a silicon carbide epitaxial layer on a silicon carbide single crystal substrate having an off-angle of 4° or less so that the number of stacking faults emitting light at wavelengths ranging from 400 to 600 nm by photoluminescence on the substrate is less than 10/cm2 in total. Additionally, the method for producing the epitaxial silicon carbide single crystal substrate forms the epitaxial layer by using chlorosilane as a silicon-based material gas and hydrocarbon gas as a carbon-based gas, at a growth temperature of 1600° C. to 1700° C., at a C/Si ratio of 0.5 to 1.0, and at a growth rate of 1 to 3 μm/hr.

    摘要翻译： 本发明提供一种外延碳化硅单晶衬底，其具有在碳化硅单晶衬底上具有较少堆垛层错的高质量碳化硅单晶薄膜及其制造方法。 外延碳化硅单晶衬底通过在偏离角为4°或更小的碳化硅单晶衬底上生长碳化硅外延层而制造，使得发射400至600nm波长的光的堆垛层错数 通过底物上的光致发光总共小于10 / cm2。 此外，外延碳化硅单晶衬底的制造方法在1600℃至1700℃的生长温度下，使用氯硅烷作为硅系材料气体和烃气体作为碳系气体，形成外延层 ，C / Si比为0.5〜1.0，生长速度为1〜3mum / hr。

    Production process of epitaxial silicon carbide single crystal substrate
    3.
    发明授权
    Production process of epitaxial silicon carbide single crystal substrate 有权
    外延碳化硅单晶衬底的生产工艺

    公开(公告)号：US08927396B2

    公开(公告)日：2015-01-06

    申请号：US13881231

    申请日：2011-11-15

    申请人： Takashi Aigo ,  Hiroshi Tsuge ,  Masakazu Katsuno ,  Tatsuo Fujimoto ,  Hirokatsu Yashiro

    发明人： Takashi Aigo ,  Hiroshi Tsuge ,  Masakazu Katsuno ,  Tatsuo Fujimoto ,  Hirokatsu Yashiro

    IPC分类号： H01L21/20 ,  H01L21/02 ,  C30B25/18 ,  C30B29/36 ,  C30B25/02

    CPC分类号： H01L21/02378 ,  C30B25/02 ,  C30B25/18 ,  C30B25/186 ,  C30B29/36 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0262 ,  H01L21/02658 ,  Y10S438/931

    摘要： An object of the present invention is to provide a production process of an epitaxial silicon carbide single crystal substrate having a high-quality silicon carbide single crystal thin film reduced in the surface defect and the like on a silicon carbide single crystal substrate with a small off-angle. According to the present invention, in the production process of an epitaxial silicon carbide single crystal substrate having a high-quality silicon carbide single crystal thin film reduced in the surface defect and the like on a silicon carbide single crystal substrate with an off-angle of 4° or less, pretreatment etching to a depth of 0.1 to 1 μm is performed at a temperature of 1,550 to 1,650° C. by flowing a gas containing silicon and chlorine together with a hydrogen gas such that the silicon atom concentration becomes from 0.0001 to 0.01% based on hydrogen atoms in the hydrogen gas, and thereafter, an epitaxial layer is formed.

    摘要翻译： 本发明的目的是提供一种外延碳化硅单晶衬底的制造方法，该外延碳化硅单晶衬底具有在具有小的剥离的碳化硅单晶衬底上具有减少表面缺陷等的高质量碳化硅单晶薄膜 -角度。 根据本发明，在具有在碳化硅单晶衬底上具有减小表面缺陷等的高质量碳化硅单晶薄膜的外延碳化硅单晶衬底的制造工艺中， 4°以下，通过使含有硅和氯的气体与氢气一起流动，使得硅原子浓度为0.0001〜0.0001，从而在1550〜1650℃的温度下进行0.1〜1μm深度的预处理蚀刻 0.01％，基于氢气中的氢原子，然后形成外延层。

    PRODUCTION PROCESS OF EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE
    7.
    发明申请
    PRODUCTION PROCESS OF EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE 有权
    外壳碳化硅单晶基板的生产工艺

    公开(公告)号：US20130217213A1

    公开(公告)日：2013-08-22

    申请号：US13881231

    申请日：2011-11-15

    申请人： Takashi Aigo ,  Hiroshi Tsuge ,  Masakazu Katsuno ,  Tatsuo Fujimoto ,  Hirokatsu Yashiro

    发明人： Takashi Aigo ,  Hiroshi Tsuge ,  Masakazu Katsuno ,  Tatsuo Fujimoto ,  Hirokatsu Yashiro

    IPC分类号： H01L21/02

    CPC分类号： H01L21/02378 ,  C30B25/02 ,  C30B25/18 ,  C30B25/186 ,  C30B29/36 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0262 ,  H01L21/02658 ,  Y10S438/931

    摘要： An object of the present invention is to provide a production process of an epitaxial silicon carbide single crystal substrate having a high-quality silicon carbide single crystal thin film reduced in the surface defect and the like on a silicon carbide single crystal substrate with a small off-angle.According to the present invention, in the production process of an epitaxial silicon carbide single crystal substrate having a high-quality silicon carbide single crystal thin film reduced in the surface defect and the like on a silicon carbide single crystal substrate with an off-angle of 4° or less, pretreatment etching to a depth of 0.1 to 1 μm is performed at a temperature of 1,550 to 1,650° C. by flowing a gas containing silicon and chlorine together with a hydrogen gas such that the silicon atom concentration becomes from 0.0001 to 0.01% based on hydrogen atoms in the hydrogen gas, and thereafter, an epitaxial layer is formed.

    摘要翻译： 本发明的目的是提供一种外延碳化硅单晶衬底的制造方法，该外延碳化硅单晶衬底具有在具有小的剥离的碳化硅单晶衬底上具有减少表面缺陷等的高质量碳化硅单晶薄膜 -角度。 根据本发明，在具有在碳化硅单晶衬底上具有减小表面缺陷等的高质量碳化硅单晶薄膜的外延碳化硅单晶衬底的制造工艺中， 4°以下，通过使含有硅和氯的气体与氢气一起流动，使得硅原子浓度从0.0001变为0.0001〜，从而在1550〜1650℃的温度下进行0.1〜1μm的深度的预处理蚀刻 0.01％，基于氢气中的氢原子，然后形成外延层。