公开(公告)号：US08044408B2

公开(公告)日：2011-10-25

申请号：US12469299

申请日：2009-05-20

申请人： Tatsuo Fujimoto ,  Kohei Tatsumi ,  Taizo Hoshino ,  Masakazu Katsuno ,  Noboru Ohtani ,  Masashi Nakabayashi ,  Hiroshi Tsuge ,  Housei Hirano ,  Hirokatsu Yashiro

发明人： Tatsuo Fujimoto ,  Kohei Tatsumi ,  Taizo Hoshino ,  Masakazu Katsuno ,  Noboru Ohtani ,  Masashi Nakabayashi ,  Hiroshi Tsuge ,  Housei Hirano ,  Hirokatsu Yashiro

IPC分类号： H01L29/15

CPC分类号： H01L21/02378 ,  C30B23/00 ,  C30B29/36 ,  H01L21/02529 ,  H01L21/02631

摘要： The invention provides a high-quality SiC single-crystal substrate, a seed crystal for producing the high-quality SiC single-crystal substrate, and a method of producing the high-quality SiC single-crystal substrate, which enable improvement of device yield and stability. Provided is an SiC single-crystal substrate wherein, when the SiC single-crystal substrate is divided into 5-mm square regions, such regions in which dislocation pairs or dislocation rows having intervals between their dislocation end positions of 5 μm or less are present among the dislocations that have ends at the substrate surface account for 50% or less of all such regions within the substrate surface and the dislocation density in the substrate of dislocations other than the dislocation pairs or dislocation is 8,000/cm2.

摘要翻译： 本发明提供一种高品质SiC单晶衬底，用于生产高质量SiC单晶衬底的晶种，以及制造高品质SiC单晶衬底的方法，其能够提高器件产量和 稳定性。 本发明提供一种SiC单晶基板，其中，当将SiC单晶基板分割为5mm见方的区域时，其位错对或位错列之间的位错端位置之间的间隔为5μm以下的区域存在于 在基板表面处具有终点的位错占基板表面内所有这些区域的50％或更少，位错对或错位以外的位错基板中的位错密度为8,000 / cm 2。

公开(公告)号：US09691607B2

公开(公告)日：2017-06-27

申请号：US13639309

申请日：2011-04-07

申请人： Takashi Aigo ,  Hiroshi Tsuge ,  Taizo Hoshino ,  Tatsuo Fujimoto ,  Masakazu Katsuno ,  Masashi Nakabayashi ,  Hirokatsu Yashiro

发明人： Takashi Aigo ,  Hiroshi Tsuge ,  Taizo Hoshino ,  Tatsuo Fujimoto ,  Masakazu Katsuno ,  Masashi Nakabayashi ,  Hirokatsu Yashiro

IPC分类号： H01L21/02 ,  C30B25/10 ,  C30B29/36

CPC分类号： H01L21/02378 ,  C30B25/10 ,  C30B29/36 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0262 ,  H01L21/02661

摘要： Disclosed is a process for producing an epitaxial single-crystal silicon carbide substrate by epitaxially growing a silicon carbide film on a single-crystal silicon carbide substrate by chemical vapor deposition. The step of crystal growth in the process comprises a main crystal growth step, which mainly occupies the period of epitaxial growth, and a secondary crystal growth step, in which the growth temperature is switched between a set growth temperature (T0) and a set growth temperature (T2) which are respectively lower and higher than a growth temperature (T1) used in the main crystal growth step. The basal plane dislocations of the single-crystal silicon carbide substrate are inhibited from being transferred to the epitaxial film. Thus, a high-quality epitaxial film is formed.

公开(公告)号：US08901570B2

公开(公告)日：2014-12-02

申请号：US13697211

申请日：2011-05-10

申请人： Takashi Aigo ,  Hiroshi Tsuge ,  Taizo Hoshino ,  Tatsuo Fujimoto ,  Masakazu Katsuno ,  Masashi Nakabayashi ,  Hirokatsu Yashiro

发明人： Takashi Aigo ,  Hiroshi Tsuge ,  Taizo Hoshino ,  Tatsuo Fujimoto ,  Masakazu Katsuno ,  Masashi Nakabayashi ,  Hirokatsu Yashiro

IPC分类号： H01L29/15 ,  H01L31/0312 ,  H01L21/02 ,  C30B25/02 ,  C30B29/36 ,  C30B25/18

CPC分类号： H01L21/02433 ,  C30B25/02 ,  C30B25/18 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02447 ,  H01L21/02507 ,  H01L21/02529 ,  H01L21/02573 ,  H01L21/0262

摘要： Provided is an epitaxial silicon carbide single-crystal substrate in which a silicon carbide epitaxial film having excellent in-plane uniformity of doping density is disposed on a silicon carbide single-crystal substrate having an off angle that is between 1° to 6°. The epitaxial film is grown by repeating a dope layer that is 0.5 μm or less and a non-dope layer that is 0.1 μm or less. The dope layer is formed with the ratio of the number of carbon atoms to the number of silicon atoms (C/Si ratio) in a material gas being 1.5 to 2.0, and the non-dope layer is formed with the C/Si ratio being 0.5 or more but less than 1.5. The resulting epitaxial silicon carbide single-crystal substrate comprises a high-quality silicon carbide epitaxial film, which has excellent in-plane uniformity of doping density, on a silicon carbide single-crystal substrate having a small off angle.

摘要翻译： 提供了一种外延碳化硅单晶衬底，其中具有优异的掺杂密度的面内均匀性的碳化硅外延膜设置在具有在1°至6°之间的偏离角的碳化硅单晶衬底上。 通过重复0.5μm以下的掺杂层和0.1μm以下的非掺杂层来生长外延膜。 该原料气体中碳原子数与硅原子数之比（C / Si比）为1.5〜2.0的掺杂层形成，非掺杂层形成为C / Si比为 0.5以上但小于1.5。 得到的外延碳化硅单晶衬底在具有小偏角的碳化硅单晶衬底上包括具有优异的掺杂密度的面内均匀性的高质量碳化硅外延膜。

公开(公告)号：US20130049014A1

公开(公告)日：2013-02-28

申请号：US13697211

申请日：2011-05-10

申请人： Takashi Aigo ,  Hiroshi Tsuge ,  Taizo Hoshino ,  Tatsuo Fujimoto ,  Masakazu Katsuno ,  Masashi Nakabayashi ,  Hirokatsu Yashiro

发明人： Takashi Aigo ,  Hiroshi Tsuge ,  Taizo Hoshino ,  Tatsuo Fujimoto ,  Masakazu Katsuno ,  Masashi Nakabayashi ,  Hirokatsu Yashiro

IPC分类号： H01L29/16 ,  C30B25/16

CPC分类号： H01L21/02433 ,  C30B25/02 ,  C30B25/18 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02447 ,  H01L21/02507 ,  H01L21/02529 ,  H01L21/02573 ,  H01L21/0262

摘要： Provided is an epitaxial silicon carbide single-crystal substrate in which a silicon carbide epitaxial film having excellent in-plane uniformity of doping density is disposed on a silicon carbide single-crystal substrate having an off angle that is between 1° to 6°. The epitaxial film is grown by repeating a dope layer that is 0.5 μm or less and a non-dope layer that is 0.1 μm or less. The dope layer is formed with the ratio of the number of carbon atoms to the number of silicon atoms (C/Si ratio) in a material gas being 1.5 to 2.0, and the non-dope layer is formed with the C/Si ratio being 0.5 or more but less than 1.5. The resulting epitaxial silicon carbide single-crystal substrate comprises a high-quality silicon carbide epitaxial film, which has excellent in-plane uniformity of doping density, on a silicon carbide single-crystal substrate having a small off angle.

摘要翻译： 提供了一种外延碳化硅单晶衬底，其中具有优异的掺杂密度的面内均匀性的碳化硅外延膜设置在具有在1°至6°之间的偏离角的碳化硅单晶衬底上。 通过重复0.5μm以下的掺杂层和0.1μm以下的非掺杂层来生长外延膜。 该原料气体中碳原子数与硅原子数之比（C / Si比）为1.5〜2.0的掺杂层形成，非掺杂层形成为C / Si比为 0.5以上但小于1.5。 得到的外延碳化硅单晶衬底在具有小偏角的碳化硅单晶衬底上包括具有优异的掺杂密度的面内均匀性的高质量碳化硅外延膜。

公开(公告)号：US20130029158A1

公开(公告)日：2013-01-31

申请号：US13639309

申请日：2011-04-07

申请人： Takashi Aigo ,  Hiroshi Tsuge ,  Taizo Hoshino ,  Tatsuo Fujimoto ,  Masakazu Katsuno ,  Masashi Nakabayashi ,  Hirokatsu Yashiro

发明人： Takashi Aigo ,  Hiroshi Tsuge ,  Taizo Hoshino ,  Tatsuo Fujimoto ,  Masakazu Katsuno ,  Masashi Nakabayashi ,  Hirokatsu Yashiro

IPC分类号： C30B25/16 ,  B32B9/04

CPC分类号： H01L21/02378 ,  C30B25/10 ,  C30B29/36 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0262 ,  H01L21/02661

摘要： Disclosed is a process for producing an epitaxial single-crystal silicon carbide substrate by epitaxially growing a silicon carbide film on a single-crystal silicon carbide substrate by chemical vapor deposition. The step of crystal growth in the process comprises a main crystal growth step, which mainly occupies the period of epitaxial growth, and a secondary crystal growth step, in which the growth temperature is switched between a set growth temperature (T0) and a set growth temperature (T2) which are respectively lower and higher than a growth temperature (T1) used in the main crystal growth step. The basal plane dislocations of the single-crystal silicon carbide substrate are inhibited from being transferred to the epitaxial film. Thus, a high-quality epitaxial film is formed.

摘要翻译： 公开了通过化学气相沉积在单晶碳化硅衬底上外延生长碳化硅膜来制造外延单晶碳化硅衬底的工艺。 该方法中的晶体生长步骤包括主要占据外延生长期的主晶体生长步骤和二次晶体生长步骤，其中生长温度在设定生长温度（T0）和设定生长 温度（T2）分别低于和高于在主晶体生长步骤中使用的生长温度（T1）。 抑制单晶碳化硅衬底的基面位错转移到外延膜。 因此，形成高质量的外延膜。

公开(公告)号：US20100080956A1

公开(公告)日：2010-04-01

申请号：US12592747

申请日：2009-12-01

申请人： Tatsuo Fujimoto ,  Noboru Ohtani ,  Masakazu Katsuno ,  Masashi Nakabayashi ,  Hirokatsu Yashiro

发明人： Tatsuo Fujimoto ,  Noboru Ohtani ,  Masakazu Katsuno ,  Masashi Nakabayashi ,  Hirokatsu Yashiro

IPC分类号： B32B5/00

CPC分类号： C30B29/36 ,  C30B23/00 ,  C30B25/02 ,  C30B29/403 ,  C30B33/02 ,  Y10T428/24355

摘要： The invention provides a low resistivity silicon carbide single crystal wafer for fabricating semiconductor devices having excellent characteristics. The low resistivity silicon carbide single crystal wafer has a specific volume resistance of 0.001 Ωcm to 0.012 Ωcm and 90% or greater of the entire wafer surface area is covered by an SiC single crystal surface of a roughness (Ra) of 1.0 nm or less.

摘要翻译： 本发明提供一种用于制造具有优异特性的半导体器件的低电阻率碳化硅单晶晶片。 低电阻率碳化硅单晶晶片的比体积电阻为0.001＆OHgr; cm至0.012＆OHgr。cm，90％或更大的整个晶片表面积由粗糙度（Ra）为1.0的SiC单晶表面覆盖 nm以下。

公开(公告)号：US09915011B2

公开(公告)日：2018-03-13

申请号：US12592747

申请日：2009-12-01

申请人： Tatsuo Fujimoto ,  Noboru Ohtani ,  Masakazu Katsuno ,  Masashi Nakabayashi ,  Hirokatsu Yashiro

发明人： Tatsuo Fujimoto ,  Noboru Ohtani ,  Masakazu Katsuno ,  Masashi Nakabayashi ,  Hirokatsu Yashiro

IPC分类号： B32B5/00 ,  C30B29/36 ,  C30B23/00 ,  C30B25/02 ,  C30B29/40 ,  C30B33/02

CPC分类号： C30B29/36 ,  C30B23/00 ,  C30B25/02 ,  C30B29/403 ,  C30B33/02 ,  Y10T428/24355

摘要： The invention provides a low resistivity silicon carbide single crystal wafer for fabricating semiconductor devices having excellent characteristics. The low resistivity silicon carbide single crystal wafer has a specific volume resistance of 0.001 Ωcm to 0.012 Ωcm and 90% or greater of the entire wafer surface area is covered by an SiC single crystal surface of a roughness (Ra) of 1.0 nm or less.

公开(公告)号：US20110278596A1

公开(公告)日：2011-11-17

申请号：US13138270

申请日：2010-01-29

申请人： Takashi Aigo ,  Hiroshi Tsuge ,  Taizo Hoshino ,  Tatsuo Fujimoto ,  Masakasu Katsuno ,  Masashi Nakabayashi ,  Hirokatsu Yashiro

发明人： Takashi Aigo ,  Hiroshi Tsuge ,  Taizo Hoshino ,  Tatsuo Fujimoto ,  Masakasu Katsuno ,  Masashi Nakabayashi ,  Hirokatsu Yashiro

IPC分类号： H01L29/24 ,  C30B25/02

CPC分类号： H01L21/02609 ,  C23C16/325 ,  C30B25/14 ,  C30B25/186 ,  C30B25/20 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02587 ,  H01L21/0262 ,  H01L21/02634

摘要： The present invention provides an epitaxial SiC monocrystalline substrate having a high quality epitaxial film suppressed in occurrence of step bunching in epitaxial growth using a substrate with an off angle of 6° or less and a method of production of the same, that is, an epitaxial silicon carbide monocrystalline substrate comprised of a silicon carbide monocrystalline substrate with an off angle of 6° or less on which a silicon carbide monocrystalline thin film is formed, the epitaxial silicon carbide monocrystalline substrate characterized in that the silicon carbide monocrystalline thin film has a surface with a surface roughness (Ra value) of 0.5 nm or less and a method of production of the same.

摘要翻译： 本发明提供一种外延SiC单晶衬底，其具有使用具有6°或更小的偏离角的衬底在外延生长中抑制发生步骤聚集的高质量外延膜的外延SiC单晶衬底及其制造方法，即外延 该外延碳化硅单晶衬底由形成有碳化硅单晶薄膜的偏离角为6°以下的碳化硅单晶衬底构成，其特征在于，所述碳化硅单晶薄膜的表面具有 0.5nm以下的表面粗糙度（Ra值）及其制造方法。

公开(公告)号：US09068277B2

公开(公告)日：2015-06-30

申请号：US12416500

申请日：2009-04-01

申请人： Masashi Nakabayashi ,  Tatsuo Fujimoto ,  Hiroshi Tsuge ,  Masakazu Katsuno ,  Noboru Ohtani

发明人： Masashi Nakabayashi ,  Tatsuo Fujimoto ,  Hiroshi Tsuge ,  Masakazu Katsuno ,  Noboru Ohtani

IPC分类号： C30B23/00 ,  C30B29/36 ,  C30B35/00 ,  C30B23/06

CPC分类号： C30B29/36 ,  C30B23/00 ,  C30B23/066 ,  C30B35/00 ,  Y10T117/1068

摘要： The invention provides an apparatus for manufacturing good quality single-crystal silicon carbide stably without formation of cracks and the like, which apparatus comprises: at least a crucible for accommodating silicon carbide feedstock powder and seed crystal; heat insulation material installed around the crucible; and a heating device for heating the crucible, wherein the outer profile of the crucible includes at least one region of narrower diameter than a vertically adjacent region, insulation material is also installed in the space left by the diameter difference, and thickness of the insulation material at the narrower diameter region is greater than that of the insulation material at the vertically adjacent region. The apparatus for manufacturing single-crystal silicon carbide enables precise control of the temperature gradient inside the crucible, thereby enabling manufacture of good quality single-crystal silicon carbide.

摘要翻译： 本发明提供了一种用于稳定地制造质量好的单晶碳化硅而不形成裂纹等的装置，该装置包括：至少一个用于容纳碳化硅原料粉末和晶种的坩埚; 隔热材料安装在坩埚周围; 以及用于加热坩埚的加热装置，其中坩埚的外部轮廓包括至少一个比垂直相邻区域更窄直径的区域，绝缘材料也安装在留有直径差的空间中，绝缘材料的厚度 在较窄直径区域处，比垂直相邻区域处的绝缘材料大。 用于制造单晶碳化硅的装置能够精确地控制坩埚内的温度梯度，从而能够制造出优质的单晶碳化硅。

公开(公告)号：US20100289033A1

公开(公告)日：2010-11-18

申请号：US12735405

申请日：2009-01-14

申请人： Noboru Ohtani ,  Masakazu Katsuno ,  Hiroshi Tsuge ,  Masashi Nakabayashi ,  Tatsuo Fujimoto

发明人： Noboru Ohtani ,  Masakazu Katsuno ,  Hiroshi Tsuge ,  Masashi Nakabayashi ,  Tatsuo Fujimoto

IPC分类号： H01L29/24 ,  B32B5/00 ,  B32B3/00 ,  C01B31/36

CPC分类号： H01L21/0262 ,  C30B23/00 ,  C30B23/002 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02447 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02634 ,  H01L21/046 ,  H01L21/0495 ,  H01L29/6606 ,  Y10T428/24355

摘要： The present invention provides a single-crystal silicon carbide ingot capable of providing a good-quality substrate low in dislocation defects, and a substrate and epitaxial wafer obtained therefrom.It is a single-crystal silicon carbide ingot comprising single-crystal silicon carbide which contains donor-type impurity at a concentration of 2×1018 cm−3 to 6×1020 cm3 and acceptor-type impurity at a concentration of 1×1018 cm−3 to 5.99×1020 cm−3 and wherein the concentration of the donor-type impurity is greater than the concentration of the acceptor-type impurity and the difference is 1×1018 cm−3 to 5.99×1020 cm−3, and a substrate and epitaxial wafer obtained therefrom.

摘要翻译： 本发明提供能够提供低位错缺陷的优质基板的单晶碳化硅锭，以及从其获得的基板和外延晶片。 是含有浓度为2×1018 cm -3〜6×1020cm 3的供体型杂质的浓度为1×1018 cm -1的受主型杂质的单晶碳化硅单晶碳化硅锭， 3〜5.99×1020cm-3，其中供体型杂质的浓度大于受主型杂质的浓度，差为1×1018cm-3〜5.99×1020cm-3，基板 和由其获得的外延晶片。