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    STATIC ELECTRICITY DEFLECTING DEVICE, ELECTRON BEAM IRRADIATING APPARATUS, SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND METHOD OF MANUFACTURING SUBSTRATE
    7.
    发明申请
    STATIC ELECTRICITY DEFLECTING DEVICE, ELECTRON BEAM IRRADIATING APPARATUS, SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND METHOD OF MANUFACTURING SUBSTRATE 审中-公开
    静电电压偏移装置，电子束辐射装置，基板处理装置，基板处理方法及制造基板的方法

    公开(公告)号：US20080067429A1

    公开(公告)日：2008-03-20

    申请号：US11932770

    申请日：2007-10-31

    申请人： Takashi Fuse ,  Tadashi Kotsugi ,  Kyo Tsuboi ,  Koji Takeya

    发明人： Takashi Fuse ,  Tadashi Kotsugi ,  Kyo Tsuboi ,  Koji Takeya

    IPC分类号： H01L21/30

    CPC分类号： H01J37/1474 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/026 ,  H01J37/147 ,  H01J37/3174 ,  H01J2237/03 ,  H01J2237/151 ,  H01L21/67017 ,  H01L21/67213 ,  Y10T29/49117 ,  Y10T29/49204 ,  Y10T29/49224 ,  Y10T29/49885

    摘要： A substrate processing apparatus which irradiates a substrate under processing with an electron beam and processes the substrate with the electron beam is disclosed. The substrate processing apparatus includes an electron beam generation mechanism which generates the electron beam, first area having a plurality of first static electricity deflecting devices whose thicknesses gradually increase in a traveling direction of the electron beam, and a second area disposed on a downstream side of the electron beam of the first area and having a plurality of second static electricity deflecting devices whose thicknesses are nearly same in the traveling direction of the electron beam. The substrate processing apparatus may further include a plurality of lenses whose thicknesses gradually decrease in the traveling direction of the electron beam, at least one of the plurality of lenses being disposed in each of the first area and the second area.

    摘要翻译： 公开了一种用电子束照射处理基板并用电子束处理基板的基板处理装置。 基板处理装置包括：电子束发生机构，其产生电子束，第一区域具有多个第一静电偏转装置，其厚度在电子束的行进方向上逐渐增加，第二区域设置在电子束的下游侧 第一区域的电子束，并且具有多个第二静电偏转装置，其厚度在电子束的行进方向上几乎相同。 基板处理装置还可以包括其厚度在电子束的行进方向上逐渐减小的多个透镜，多个透镜中的至少一个设置在第一区域和第二区域中的每一个中。

    Plasma etching method
    8.
    发明授权
    Plasma etching method 失效
    等离子蚀刻法

    公开(公告)号：US06914010B2

    公开(公告)日：2005-07-05

    申请号：US10745519

    申请日：2003-12-29

    申请人： Jae Young Jeong ,  Takashi Fuse ,  Kiwami Fujimoto

    发明人： Jae Young Jeong ,  Takashi Fuse ,  Kiwami Fujimoto

    IPC分类号： H01L21/3065 ,  H01L21/311 ,  H01L21/768 ,  H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/76802 ,  H01L21/31116

    摘要： A plasma etching method is performed by plasma etching an SiN layer through a mask layer to form a first wiring portion and a second wiring portion, the first and the second wiring portions having different wiring densities in the etched SiN layer, the mask having two pattern portions respectively corresponding to the first and the second wiring portions. In the plasma etching step, by using an etching gas including fluorocarbon and C2H2F4, the line width variation between the first and the second wiring portions is restrained.

    摘要翻译： 通过等离子体蚀刻SiN层通过掩模层来形成等离子体蚀刻方法，以形成第一布线部分和第二布线部分，第一和第二布线部分在蚀刻SiN层中具有不同的布线密度，掩模具有两个图案 分别对应于第一和第二布线部分的部分。 在等离子体蚀刻步骤中，通过使用包括碳氟化合物和C 2 H 2 F 4 F 4的蚀刻气体，第一和第二 第二配线部被抑制。

    Plasma processing method
    9.
    发明授权
    Plasma processing method 失效
    等离子体处理方法

    公开(公告)号：US07381653B2

    公开(公告)日：2008-06-03

    申请号：US11482705

    申请日：2006-07-10

    申请人： Takashi Fuse

    发明人： Takashi Fuse

    IPC分类号： H01L21/302

    CPC分类号： H01L21/67253 ,  H01J37/32935

    摘要： A plasma processing method is conducted while a thickness of a resist film being monitored, thereby preventing the thickness of the resist film from being reduced. The plasma processing method includes steps of supplying a processing gas into an airtight processing chamber, and plasma-processing a target layer formed on an object to be processed by using a resist film as a mask. The method includes a main etching process (first process) of plasma-processing the target layer while the thickness of the resist film being monitored until the reduction rate of the thickness of the resist film reaches a predetermined value, and an over-etching process (second process) of plasma-processing the target layer in a changed process condition in which selectivity against the resist film is higher than in the first process.

    摘要翻译： 进行等离子体处理的方法，同时监测抗蚀剂膜的厚度，从而防止抗蚀剂膜的厚度减小。 等离子体处理方法包括以下步骤：将处理气体供应到气密处理室中，并且通过使用抗蚀剂膜作为掩模来等离子体处理形成在待处理物体上的目标层。 该方法包括对被监测层进行等离子体处理的主蚀刻处理（第一工序），同时对被保护膜的厚度进行监视，直到抗蚀剂膜的厚度的还原率达到规定值为止，以及过蚀刻工序 在对抗蚀剂膜的选择性高于第一工艺的改变的工艺条件下等离子体处理目标层的第二工艺。

    Plasma processing method
    10.
    发明授权
    Plasma processing method 有权
    等离子体处理方法

    公开(公告)号：US07141510B2

    公开(公告)日：2006-11-28

    申请号：US10811931

    申请日：2004-03-30

    申请人： Takashi Fuse

    发明人： Takashi Fuse

    IPC分类号： H01L21/302

    CPC分类号： H01L21/67253 ,  H01J37/32935

    摘要： A plasma processing method is conducted while a thickness of a resist film being monitored, thereby preventing the thickness of the resist film from being reduced. The plasma processing method includes steps of supplying a processing gas into an airtight processing chamber, and plasma-processing a target layer formed on an object to be processed by using a resist film as a mask. The method includes a main etching process (first process) of plasma-processing the target layer while the thickness of the resist film being monitored until the reduction rate of the thickness of the resist film reaches a predetermined value, and an over-etching process (second process) of plasma-processing the target layer in a changed process condition in which selectivity against the resist film is higher than in the first process.

    摘要翻译： 进行等离子体处理的方法，同时监测抗蚀剂膜的厚度，从而防止抗蚀剂膜的厚度减小。 等离子体处理方法包括以下步骤：将处理气体供应到气密处理室中，并且通过使用抗蚀剂膜作为掩模来等离子体处理形成在待处理物体上的目标层。 该方法包括对被监测层进行等离子体处理的主蚀刻处理（第一工序），同时对被保护膜的厚度进行监视，直到抗蚀剂膜的厚度的还原率达到规定值为止，以及过蚀刻工序 在对抗蚀剂膜的选择性高于第一工艺的改变的工艺条件下等离子体处理目标层的第二工艺。