Nonlinear resistance element and fabrication method thereof in which
tungsten atoms are distributed continuously within the insulating film
    1.
    发明授权
    Nonlinear resistance element and fabrication method thereof in which tungsten atoms are distributed continuously within the insulating film 失效
    其中钨原子在绝缘膜内连续分布的非线性电阻元件及其制造方法

    公开(公告)号:US5781256A

    公开(公告)日:1998-07-14

    申请号:US716175

    申请日:1996-09-23

    CPC分类号: H01L45/00 G02F1/1365

    摘要: The method of fabricating a nonlinear resistance element includes the steps of: forming on a substrate a first conductive film having tantalum as a main component to which is added tungsten; forming an insulating film on the first conductive film by anodization of the first conductive film, using an electrolyte comprising tungstic acid ions and under conditions by which the pH of the electrolyte is conditioned in accordance with the tungsten concentration within the first conductive film; and forming a second conductive film on the insulating film. The "polarity difference" of the nonlinear resistance element varies with the tungsten concentration in the first conductive film, and it also varies with the pH of the electrolyte, even when the tungsten concentration is the same. Therefore, the "polarity difference" can be set to substantially zero by regulating the tungsten concentration within the first metal film and by setting the pH of the electrolyte that is used in the anodization to match this tungsten concentration. An aqueous solution of ammonium tungstate is preferably used as the electrolyte for the anodization and ammonia is preferably used as the pH conditioner.

    摘要翻译: PCT No.PCT / JP96 / 00113 Sec。 371日期1996年9月23日 102(e)1996年9月23日PCT PCT 1996年1月23日PCT公布。 公开号WO96 / 23246 日期:1996年8月1日制造非线性电阻元件的方法包括以下步骤:在基板上形成具有钽作为添加钨的主要成分的第一导电膜; 通过阳极氧化第一导电膜,使用包含钨酸离子的电解质和在电解质的pH根据第一导电膜内的钨浓度调节的条件下,在第一导电膜上形成绝缘膜; 以及在所述绝缘膜上形成第二导电膜。 非线性电阻元件的“极性差”随着第一导电膜中的钨浓度而变化,并且即使当钨浓度相同时也随电解质的pH而变化。 因此,通过调节第一金属膜中的钨浓度和通过使用于阳极氧化处理的电解质的pH来匹配该钨浓度,可将“极性差”设定为基本为零。 优选使用钨酸铵的水溶液作为阳极氧化用电解质,优选使用氨作为pH调节剂。

    Window for microwave plasma processing device
    2.
    发明授权
    Window for microwave plasma processing device 失效
    用于微波等离子体处理装置的窗口

    公开(公告)号:US5234526A

    公开(公告)日:1993-08-10

    申请号:US705523

    申请日:1991-05-24

    CPC分类号: H01J37/32238 H01J37/32192

    摘要: A microwave transmitting window for a plasma processing device. The window is a body of one or more pieces of the same or different dielectric materials. A surface of the window facing a microwave transmitting horn or waveguide is planar and extends perpendicularly to an axial direction. An opposite surface of the window is recessed such that the body has a non-uniform thickness between the two surfaces. The recessed surface can have various shapes and the overall size of the window can be equal to the size of a plasma formation chamber of the plasma processing device. The outlet of the plasma formation chamber can be formed in an end wall or the outlet can be formed by the inner periphery of the plasma formation chamber.

    摘要翻译: 一种用于等离子体处理装置的微波发射窗。 窗口是一个或多个相同或不同介电材料的主体。 面向微波发射喇叭或波导的窗口的表面是平面的并且垂直于轴向方向延伸。 窗口的相对表面凹陷,使得主体在两个表面之间具有不均匀的厚度。 凹陷表面可以具有各种形状,并且窗口的总体尺寸可以等于等离子体处理装置的等离子体形成室的尺寸。 等离子体形成室的出口可以形成在端壁中,或者出口可以由等离子体形成室的内周形成。

    Screw compressor with slide valve including a sealing projection
    4.
    发明授权
    Screw compressor with slide valve including a sealing projection 有权
    带滑阀的螺杆式压缩机包括密封突起

    公开(公告)号:US09200632B2

    公开(公告)日:2015-12-01

    申请号:US13820067

    申请日:2011-09-29

    摘要: A screw compressor includes a casing having low and high pressure spaces, a screw rotor inserted in a cylinder part of the casing, and a slide valve disclosed in the cylinder part. The screw rotor has a plurality of helical grooves forming a compression chamber. The slide valve is moveable along an axis of the screw rotor and faces an outer periphery of the screw rotor to form a discharge port to communicating the compression chamber with the high pressure space. Fluid in the low pressure space is sucked into the compression chamber, compressed, and then discharged to the high-pressure space when the screw rotor rotates. The slide valve includes a sealing projection located on a back surface of the slide valve opposite to the screw rotor, and separating the low and high pressure spaces from each other when the sealing projection is in slidable contact with the casing.

    摘要翻译: 螺杆压缩机包括具有低压和高压空间的壳体,插入壳体的气缸部分中的螺杆转子和在气缸部分中公开的滑阀。 螺杆转子具有形成压缩室的多个螺旋槽。 滑阀可以沿着螺杆转子的轴线移动并且面向螺杆转子的外周,以形成将压缩室与高压空间连通的排出口。 低压空间中的流体被吸入压缩室,压缩,然后当螺杆转子旋转时排出到高压空间。 滑阀包括位于滑阀的与螺旋转子相对的后表面上的密封突起,并且当密封突起与壳体可滑动接触时,将低压空间与高压空间分开。

    Elastic-wave filter device and composite device including the same
    5.
    发明授权
    Elastic-wave filter device and composite device including the same 有权
    弹性波滤波装置及其复合装置

    公开(公告)号:US09099634B2

    公开(公告)日:2015-08-04

    申请号:US13405415

    申请日:2012-02-27

    摘要: An elastic-wave filter device includes a first piezoelectric substrate, a second piezoelectric substrate, a first pillar-like wiring electrode, and a second pillar-like wiring electrode. The first and second substrates have a first and a second IDT electrodes on their top faces respectively. A lateral face of the second substrate confronts a lateral face of the first substrate. The first pillar-like electrode and the second pillar-like electrode are formed above the first and the second substrates respectively, and are electrically connected to the first and the second IDT electrodes respectively. The first substrate is thicker than the second substrate. A distance between a plane including the top face of the first substrate and a plane including the top face of the second substrate is smaller than a distance between a plane including an underside of the first substrate and a plane including an underside of the second substrate.

    摘要翻译: 弹性波滤波器装置包括第一压电基板,第二压电基板,第一柱状布线电极和第二柱状布线电极。 第一和第二基板分别在其顶面上具有第一和第二IDT电极。 第二基板的侧面面对第一基板的侧面。 第一柱状电极和第二柱状电极分别形成在第一和第二基板的上方,分别电连接到第一和第二IDT电极。 第一衬底比第二衬底厚。 包括第一基板的顶面的平面和包括第二基板的顶面的平面之间的距离小于包括第一基板的下侧的平面和包括第二基板的下侧的平面之间的距离。

    Bipolar transistor
    6.
    发明授权
    Bipolar transistor 有权
    双极晶体管

    公开(公告)号:US08716835B2

    公开(公告)日:2014-05-06

    申请号:US13124873

    申请日:2009-10-16

    摘要: A bipolar transistor is provided with an emitter layer, a base layer and a collector layer. The emitter layer is formed above a substrate and is an n-type conductive layer including a first nitride semiconductor. The base layer is formed on the emitter layer and is a p-type conductive including a second nitride semiconductor. The collector layer is formed on the base layer and includes a third nitride semiconductor. The collector layer, the base layer and the emitter layer are formed such that a crystal growth direction to the substrate surface is parallel to a substrate direction of [000-1]. The third nitride semiconductor contains InycAlxcGa1-xc-ycN (0•xc•1, 0•yc•1, 0

    摘要翻译: 双极晶体管设置有发射极层,基极层和集电极层。 发射极层形成在衬底之上,并且是包括第一氮化物半导体的n型导电层。 基极层形成在发射极层上,是包含第二氮化物半导体的p型导体。 集电极层形成在基极层上并且包括第三氮化物半导体。 形成集电体层,基极层和发射极层,使得到基板表面的晶体生长方向平行于[000-1]的基板方向。 第三氮化物半导体含有InycAlxcGa1-xc-ycN(0·xc·1,0,0·yc·1,0,0cc·yc·1)。 第三氮化物半导体中的表面侧的a轴长度比基板侧的a轴长短。

    Semiconductor device and method for manufacturing the same
    7.
    发明授权
    Semiconductor device and method for manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号:US08716755B2

    公开(公告)日:2014-05-06

    申请号:US13553759

    申请日:2012-07-19

    IPC分类号: H01L29/66

    摘要: Compression strains are generated at an interface between the cap layer and the barrier layer and an interface between the channel layer and the buffer layer and a tensile strain is generated at an interface between the barrier layer and the channel layer. Therefore, negative charge is higher than positive charge at the interface between the cap layer and the barrier layer and the interface between the channel layer and the buffer layer, while positive charge is higher than negative charge at the interface between the barrier layer and the channel. The channel layer has a stacked layer structure of a first layer, a second layer, and a third layer. The second layer has a higher electron affinity than those of the first layer and the third layer.

    摘要翻译: 在帽层和阻挡层之间的界面处产生压缩应变,并且在沟道层和缓冲层之间的界面处产生压缩应变,并且在阻挡层和沟道层之间的界面处产生拉伸应变。 因此,负电荷高于帽层和阻挡层之间的界面处的正电荷以及沟道层与缓冲层之间的界面,而正电荷高于阻挡层和沟道之间的界面处的负电荷 。 沟道层具有第一层,第二层和第三层的堆叠层结构。 第二层比第一层和第三层具有更高的电子亲和力。

    Camera device, camera system and camera calibration method
    8.
    发明授权
    Camera device, camera system and camera calibration method 有权
    相机设备,相机系统和相机校准方法

    公开(公告)号:US08687067B2

    公开(公告)日:2014-04-01

    申请号:US13542960

    申请日:2012-07-06

    IPC分类号: H04N17/00 H04N7/18

    摘要: An object of the present invention is to simplify a calibration operation of a camera and to shorten a time necessary for calibration. A camera calibration device 10 is mounted on a predetermined position of a movable object 100 and includes a camera 11 configured to take an image including an index 41 provided outside the movable object 100, an image superimposing unit 122 configured to generate a superimposed image by superimposing a calibration object 42 having a position adjustment part and a rotation adjustment part on the image taken by the camera 11, and a calculation unit 124 configured to calculate, based on a position of the calibration object 42 after being shifted in the superimposed image such that an end or a center of the index 41 meets the position adjustment part and a part of the index other than the end or the center overlaps the rotation adjustment part, parameters relative to a pan angle, a tilt angle and a roll angle for calibration of the camera mounting position.

    摘要翻译: 本发明的目的是简化照相机的校准操作并缩短校准所需的时间。 相机校准装置10安装在可移动物体100的预定位置,并且包括被配置为拍摄包括设置在可移动物体100外部的索引41的图像的照相机11,被配置为通过叠加产生叠加图像的图像叠加单元122 在摄像机11拍摄的图像上具有位置调整部和旋转调整部的校准对象42,以及计算部124,其基于校准对象42在叠加图像中移位后的位置, 索引41的端部或中心与位置调整部分相遇,并且除了端部或中心之外的索引的一部分与旋转调节部分重叠,相对于摇摄角度的参数,用于校准的倾斜角度和滚动角度 相机安装位置。

    Semiconductor device using a group III nitride-based semiconductor
    9.
    发明授权
    Semiconductor device using a group III nitride-based semiconductor 有权
    使用III族氮化物基半导体的半导体器件

    公开(公告)号:US08674407B2

    公开(公告)日:2014-03-18

    申请号:US12919640

    申请日:2009-03-12

    IPC分类号: H01L29/66

    摘要: The present invention provides a semiconductor device having such a structure formed by sequentially laminating a lower barrier layer composed of lattice-relaxed AlxGa1-xN (0≦x≦1), a channel layer composed of InyGa1-yN (0≦y≦1) with compressive strain and a contact layer composed of AlzGa1-zN (0≦z≦1), wherein a two-dimensional electron gas is produced in the vicinity of an interface of said InyGa1-yN channel layer with said AlzGa1-zN contact layer; a gate electrode is formed so as to be embedded in the recessed portion with intervention of an insulating film, which recessed portion is formed by removing a part of said AlzGa1-zN contact layer by etching it away until said InyGa1-yN channel layer is exposed; and, ohmic electrodes are formed on the AlzGa1-zN contact layer. Thus, the semiconductor device has superior uniformity and reproducibility of the threshold voltage while maintaining a low gate leakage current, and is also applicable to the enhancement mode type.

    摘要翻译: 本发明提供一种具有这样的结构的半导体器件,该半导体器件通过依次层叠由晶格弛豫的Al x Ga 1-x N(0 @ x @ 1)构成的下阻挡层,由InyGa1-yN(0 @ y @ 1) 具有压应变和由Al z Ga 1-z N(0 @ z @ 1)组成的接触层,其中在所述In y Ga 1-y N沟道层与所述Al z Ga 1-z N接触层的界面附近产生二维电子气; 通过介入绝缘膜形成嵌入在凹陷部分中的栅电极,该凹陷部分通过蚀刻除去所述AlzGa1-zN接触层的一部分而形成,直到所述In y Ga 1-y N沟道层暴露 ; 并且在AlzGa1-zN接触层上形成欧姆电极。 因此,半导体器件在保持低栅极漏电流的同时具有优异的阈值电压的均匀性和再现性,并且也适用于增强型。

    Vehicle seat
    10.
    发明授权
    Vehicle seat 有权
    车座

    公开(公告)号:US08668225B2

    公开(公告)日:2014-03-11

    申请号:US13701136

    申请日:2011-06-03

    IPC分类号: B60R21/207

    摘要: A vehicle seat includes: a seat back frame that is provided with a pair of side frame portions that are located on both left and right sides in the seat transverse direction; an outer-side load transmitting block that is located further to an outer side in the transverse direction of the seat back frame than the side frame portion of the seat back frame, and that transmits an impact load that is input from a side of the vehicle body to the seat back frame; a protruding portion that protrudes from a side surface of the side frame portion on the outer side in the transverse direction of the seat back frame towards the outer side in the transverse direction of the seat back frame; a side airbag apparatus that is located on a front surface of the protruding portion; and an engaging portion that is formed in the outer-side load transmitting block, and that receives the protruding portion. The protruding portion is formed in a box shape that has a supporting surface on a surface thereof that faces the side airbag apparatus.

    摘要翻译: 车辆座椅包括:座椅靠背框架,其设置有位于座椅横向方向上的左右两侧的一对侧框架部分; 位于座椅靠背框架的横向方向上比座椅靠背框架的侧框架部分更靠外侧的外侧载荷传递块,并且传递从车辆侧面输入的冲击载荷 身体到座椅靠背框架; 从座椅靠背框架的宽度方向的外侧的侧框架部的侧面朝向座椅靠背框架的宽度方向的外侧突出的突出部; 位于突出部的前表面上的侧面安全气囊装置; 以及形成在所述外侧负载传递块中并且接收所述突出部的接合部。 突出部形成为在与侧面安全气囊装置相对的表面上具有支撑面的盒状。